Page 1
Discrete POWER & Signal
Technologies
2N7052 / 2N7053 / NZT7053
2N7052 NZT7053
C
B
E
TO-92
C
2N7053
B
E
TO-226
C
C
B
SOT-223
NPN Darlington Transistor
This device is designed for applications requiring extremely high
gain at collector currents to 1.0 A and high breakdown voltage.
Sourced from Process 06.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Collector-Emitter Voltage 100 V
Collector-Base Voltage 100 V
Emitter-Base Voltage 12 V
Collector Current - Continuous 1.5 A
Operating and Storage Junction Temperature Range -55 to +150
C
°
E
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
2N7052 2N7053 *NZT7053
P
D
R
θ
JC
R
θ
JA
*Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm
ã 1997 Fairchild Semiconductor Corporation
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case 83.3 125
Thermal Resistance, Junction to Ambient 200 50 125
625
5.0
2
.
1,000
8.0
1,000
8.0
mW
mW/°C
°C/W
°C/W
Page 2
(BR)
(BR)
(BR)
µ
µ
µ
NPN Darlington Transistor
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
CEO
V
CBO
V
EBO
I
CBO
I
CES
I
EBO
ON CHARACTERISTICS*
h
FE
V
sat
CE(
V
BE(on)
Collector-Emitte r Breakdown Voltage* IC = 1.0 mA, IB = 0 100 V
Collector-Base Breakdown Voltag e
I
= 100 µA, IE = 0
C
100 V
Emitter-Base Breakdown Voltage IE = 1.0 mA, IC = 0 12 V
Collector-Cutoff Current VCB = 80 V, IE = 0 0.1
Collector-Cutoff Current VCE = 80 V, IE = 0 0.2
Emitter-Cutoff Current VEB = 7.0 V, IC = 0 0.1
DC Current Gain IC = 100 mA, VCE = 5.0 V
I
= 1.0 A, VCE = 5.0 V
Collector-Emitte r Saturation Voltage IC = 100 mA, IB = 0.1 mA 1.5 V
)
C
10,000
1,000 20,000
Base-Emitter On Voltage IC = 100 mA, VBE = 5.0 V 2.0 V
A
A
A
2N7052 / 2N7053 / NZT7053
SMALL SIGNAL CHARACTERISTICS
F
T
C
cb
Transition Frequency IC = 100 mA, VCE = 5.0 V, 200 MHz
Collector-Base Capa citance VCB = 10 V,f = 1.0 MHz
*Pulse Test: Pulse Width £ 300 ms, Duty Cycle £ 1.0%
Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
100
80
60
125 °C
40
20
0
0.001 0.01 0.1 1
FE
h - TYPICAL PULSED CURRENT GAIN (K)
I - COLLECTOR CURRENT (A)
C
25 °C
- 40°C
2N7052
2N7053
10
8.0
Collector-Emitter Saturation
V o l tag e vs Collector Current
2
= 1000
β
1.6
1.2
0.8
0.4
0
10 100 1000
CESAT
V - COLLECTOR EMITTER VOLTAGE (V)
25 °C
I - COLLECTOR CURRENT (mA)
- 40°C
125 °C
pF
Page 3
Typical Characteristics (continued)
2N7052 / 2N7053 / NZT7053
NPN Darlington Transistor
(continued)
Base-Emitter Saturation
Voltage vs Collector Current
2
β
= 1000
1.6
1.2
0.8
0.4
0
BESAT
V - BASE EMITTER VOLTAGE (V)
10 100 1000
- 40°C
25 °C
125 °C
I - COLLECTOR CURRENT (mA)
C
Collector-Cutoff Current
vs. Ambient Temperature
100
V = 80V
CB
10
1
0.1
CBO
0.01
I - COLLECTOR CURRENT (nA)
25 50 75 100 125
T - AMBIENT TEMPERATURE ( C)
A
º
Base Emitter ON Voltage vs
Collector Current
2
- 40°C
25 °C
125 °C
V = 5V
CE
10 100 1000
I - COLLECTOR CURRENT (mA)
C
BEON
V - BASE EMITTER ON VOLTAGE (V)
1.6
1.2
0.8
0.4
0
Junction Capacitance vs
Reverse Bias Voltage
100
10
JUNCTION CAPACITANCE (pF)
1
0.1 1 10 100
REVERSE BIAS VOLTAGE (V)
C
ib
C
cb
Typical Collector-Emitter Leakage
Current vs Temperature
1000
V = 80V
CE
V = 0
BE
100
10
1
CES
I - LEAKAGE CU RRENT (nA)
0.1
04080120160
T - JUNCTION TEMPERATURE ( C)
J
º
Power Dissipation vs
Ambi en t T emper ature
1
0.75
TO-92
0.5
0.25
D
P - POWER DISSIPATION (W)
0
0 255075100125150
SOT-223
TO-226
TEMPERATURE ( C)
o
Page 4
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not intended to be an exhaustive list of all such trademarks.
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®
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failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
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effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
Formative or
In Design
First Production
Full Production
Not In Production
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
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