Vishay 2N7002, VQ1000J, VQ1000P, 2N7000, BS170 Schematic

PRODUCT SUMMARY

2N7000/2N7002, VQ1000J/P, BS170

Vishay Siliconix

N-Channel 60-V (D-S) MOSFET

Part Number V

2N7000

2N7002 7.5 @ VGS = 10 V 1 to 2.5 0.115 VQ1000J VQ1000P 5.5 @ VGS = 10 V 0.8 to 2.5 0.225

BS170 5 @ VGS = 10 V 0.8 to 3 0.5

(BR)DSS

Min (V)

60

V

r

Max (W)

DS(on)

5 @ VGS = 10 V 0.8 to 3 0.2

5.5 @ VGS = 10 V 0.8 to 2.5 0.225

(V) ID (A)

GS(th)

FEATURES BENEFITS APPLICATIONS

D Low On-Resistance: 2.5 W D Low Threshold: 2.1 V D Low Input Capacitance: 22 pF D Fast Switching Speed: 7 ns D Low Input and Output Leakage

TO-226AA

(TO-92)

S

G

D

1

2

3

Top View

2N7000

Dual-In-Line

D Low Offset Voltage D Low-Voltage Operation D Easily Driven Without Buffer D High-Speed Circuits D Low Error Voltage

D Direct Logic-Level Interface: TTL/CMOS D Drivers: Relays, Solenoids, Lamps, Hammers,

Displays, Memories, Transistors, etc.

D Battery Operated Systems D Solid-State Relays

TO-236

(SOT-23)

G

1

S

2

Top View

Marking Code: 72wll 72 = Part Number Code for 2N7002

w = Week Code ll = Lot Traceability

D

3

D

1

N

Document Number: 70226 S-04279—Rev. F, 16-Jul-01

S

1

G

1

NC NC

G

2

S

2

D

2

1

2

3

4

5

6

7

Top View

Plastic: VQ1000J

Sidebraze: VQ1000P

D

4

14

S

13

G

12

11

G

10

S

9

D

8

N

4

3

N

3

TO-92-18RM

(TO-18 Lead Form)

D

G

S

1

2

3

Top View

BS170

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11-1

2N7000/2N7002, VQ1000J/P, BS170

Vishay Siliconix

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Single Total Quad

Parameter Symbol 2N7000 2N7002

Drain-Source Voltage V Gate-Source Voltage—Non-Repetitive V Gate-Source Voltage—Continuous V

Continuous Drain Current

Continuous Drain Current (T

= 150_C)

J

Pulsed Drain Current

Power Dissipation

Thermal Resistance, Junction-to-Ambient R Operating Junction and

Storage Temperature Range

Notes a. Pulse width limited by maximum junction temperature. b. t

v 50 ms.

p

a

TA= 25_C TA= 100_C

GSM

I

P

TJ, T

DS

GS

I

D

DM

thJA

60 60 60 60 60

"40 "40 "30 "25 "20 "20 "20 "20 "20

0.2 0.115 0.225 0.225 0.5

0.13 0.073 0.14 0.14 0.175

0.5 0.8 1 1

D

stg

0.4 0.2 1.3 1.3 2 0.83

0.16 0.08 0.52 0.52 0.8

312.5 625 96 96 62.5 156

VQ1000J VQ1000P

–55 to 150

SPECIFICATIONSĊ2N7000 AND 2N7002 (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol Test Conditions TypaMin Max Min Max Unit

Static

Drain-Source Breakdown Voltage V

Gate-Threshold Voltage V

Gate-Body Leakage I

Zero Gate Voltage Drain Current I

On-State Drain Current

Drain-Source On-Resistance

Forward Transconductance Common Source Output Conductance

b

(BR)DSS

r

Dynamic

Input Capacitance C Output Capacitance C Reverse Transfer Capacitance C

GS(th)

GSS

DSS

I

D(on)

DS(on)

g

fs

g

os

iss oss rss

VGS = 0 V, ID = 10 mA

VDS = VGS, ID = 1 mA 2.1 0.8 3 VDS = VGS, ID = 0.25 mA 2.0 1 2.5 VDS = 0 V, VGS = "15 V "10 VDS = 0 V, VGS = "20 V "100

VDS = 48 V, VGS = 0 V 1

TC = 125_C

VDS = 60 V, VGS = 0 V 1

TC = 125_C VDS = 10 V, VGS = 4.5 V 0.35 0.075 VDS = 7.5 V, VGS = 10 V 1 0.5 VGS = 4.5 V, ID = 0.075 A 4.5 5.3

VGS = 5 V, ID = 0.05 A 3.2 7.5

TC = 125_C

VGS = 10 V, ID = 0.5 A 2.4 5 7.5

TJ = 125_C VDS = 10 V, ID = 0.2 A 100 80 VDS = 5 V, ID = 0.05 A 0.5

VDS = 25 V, VGS = 0 V

f = 1 MHz

70 60 60

5.8 13.5

4.4 9 13.5

22 60 50 11 25 25

2 5 5

VQ1000J/P

Limits

2N7000 2N7002

1000

BS170 Unit

V

A

W

_C/W

_C

V

nA

mA

500

A

W

mS

pF

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11-2

Document Number: 70226

S-04279—Rev. F, 16-Jul-01

2N7000/2N7002, VQ1000J/P, BS170

W

m

W

Vishay Siliconix

SPECIFICATIONSĊ2N7000 AND 2N7002 (TA = 25_C UNLESS OTHERWISE NOTED)

Limits

2N7000 2N7002

Parameter Symbol Test Conditions TypaMin Max Min Max Unit

Switching

Turn-On Time t Turn-Off Time t Turn-On Time t Turn-Off Time t

SPECIFICATIONSĊVQ1000J/P AND BS170 (TA = 25_C UNLESS OTHERWISE NOTED)

Static

Drain-Source Breakdown Voltage V Gate-Threshold Voltage V

Gate-Body Leakage I

Zero Gate Voltage Drain Current I

On-State Drain Current

Drain-Source On-Resistance

Forward Transconductance

Common Source Output Conductance

Dynamic

Input Capacitance C Output Capacitance C Reverse Transfer Capacitance C

Switching

Turn-On Time t Turn-Off Time t Turn-On Time t Turn-Off Time t

d

ON

OFF

ON

OFF

VDD = 15 V, RL = 25 W

VDD = 15 V, RL = 25

ID ^0.5 A, V

ID ^ 0.2 A, V

GEN

VDD = 30 V, RL = 150 W

VDD = 30 V, RL = 150

GEN

= 10 V, RG = 25 W

7 10 7 10 7 20

11 20

Limits

VQ1000J/P BS170

Parameter Symbol Test Conditions TypaMin Max Min Max Unit

(BR)DSS

GS(th)

GSS

DSS

b

I

D(on)

r

DS(on)

g

fs

os

iss oss rss

VGS = 0 V, ID = 100 mA

VDS = VGS, ID = 1 mA 2.1 0.8 2.5 0.8 3

VDS = 0 V, VGS = "10 V "100

TJ = 125_C

VDS = 0 V, VGS = "15 V "10

VDS = 25 V, VGS = 0 V 0.5

VDS = 48 V, VGS = 0 V, TJ = 125_C

VDS = 60 V, VGS = 0 V 10

VDS = 10 V, VGS = 10 V 1 0.5 A

VGS = 5 V, ID = 0.2 A 4 7.5 VGS = 10 V, ID = 0.2 A 2.3 5 VGS = 10 V, ID = 0.3 A 2.3 5.5

TJ = 125_C

VDS = 10 V, ID = 0.2 A 100

VDS = 10 V, ID = 0.5 A 100

VDS =5 V, ID = 0.05 A 0.5

VDS =25 V, VGS = 0 V

f = 1 MHz

d

ON

OFF

ON

OFF

VDD = 15 V, RL = 23 W

VDD = 15 V, RL = 23

ID ^ 0.6 A, V

ID ^ 0.2 A, V

GEN

VDD = 25 V, RL = 125 W

VDD = 25 V, RL = 125

GEN

= 10 V, RG = 25 W

70 60 60

"500

500

4.2 7.6

22 60 60 11 25

2 5

7 10 7 10 7 10 7 10

ns

V

nA

mA

W

mS

pF

ns

Notes a. For DESIGN AID ONLY, not subject to production testing. VNBF06 b. Pulse test: PW v80 ms duty cycle v1%. c. This parameter not registered with JEDEC. d. Switching time is essentially independent of operating temperature.

Document Number: 70226 S-04279—Rev. F, 16-Jul-01

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11-3

2N7000/2N7002, VQ1000J/P, BS170

Vishay Siliconix

TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)

1.0

Output Characteristics Transfer Characteristics

VGS = 10, 9, 8, 7 V

0.8

0.6

0.4

– Drain Current (A)

D

I

0.2

0.0 0123456

VDS – Drain-to-Source Voltage (V)

7

6

5

4

3

– On-Resistance ( Ω )

2

DS(on)

r

1

0

0.0 0.2 0.4 0.6 0.8 1.0 I

– Drain Current (A)

D

rDS @ 5 V = V

rDS @ 10 V = V

6.5 V

6 V

5.5 V

5 V

4.5 V

4 V

3.5 V 3 V 2.5 V

GS

2, 1 V

1.0

0.8 TJ = –55_C

0.6

0.4

– Drain Current (A)

D

I

0.2

0.0

012345678

– Gate-to-Source Voltage (V)

V

GS

CapacitanceOn-Resistance vs. Drain Current

60

VGS = 0 V f = 1 MHz

50

40

30

20

C – Capacitance (pF)

10

0

0 5 10 15 20 25 30 35

– Drain-to-Source Voltage (V)

V

DS

C

iss

C

oss

C

rss

25_C

125_C

20

16

12

8

4

– Gate-to-Source Voltage (V)

GS

V

0

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11-4

Gate Charge

ID = 0.5 A

VDS = 30 V

0 400 800 1200 1600 2000 2400

Qg – Total Gate Charge (pC)

(Normalized)

– On-Resistance ( Ω )

DS(on)

r

On-Resistance vs. Junction Temperature

2.0

VGS = 10 V, rDS @ 0.5 A

1.5

1.0 VGS = 5 V, rDS @ 0.05 A

0.5

0.0

–55 –30 –5 20 45 70 95 120 145

T

– Junction Temperature (_C)

J

Document Number: 70226

S-04279—Rev. F, 16-Jul-01

2N7000/2N7002, VQ1000J/P, BS170

TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)

Vishay Siliconix

1.000

Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage

TJ = 125_C

0.100

T

= 25_C

J

0.010

– Source Current (A)

S

I

0.001

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V)

0.50

0.25

–0.00

– On-Resistance ( Ω )

DS(on)

r

Threshold Voltage

ID = 250 mA

6

I

5

4

= 50 mA

D

500 mA

3

2

1

0

0 2 4 6 8 101214161820

– Variance (V)

–0.25

GS(th)

V

–0.50

–0.75

–50 –25 0 25 50 75 100 125 150

Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA, BS170 Only)

1

Duty Cycle = 0.5

0.2

0.1

0.05

0.1

0.02

Thermal Impedance

Normalized Effective Transient

0.01

0.1 1 10010 1 K

0.01

Single Pulse

t1 – Square Wave Pulse Duration (sec)

Notes:

P

DM

t

1

t

1. Duty Cycle, D =

2. Per Unit Base = R

3. TJM – TA = PDMZ

2

thJA

t t

thJA

1 2

(t)

= 156_C/W

10 K

Document Number: 70226 S-04279—Rev. F, 16-Jul-01

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11-5

Legal Disclaimer Notice

Vishay

Disclaimer

All product specifications and data are subject to change without notice.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product.

Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.

Product names and markings noted herein may be trademarks of their respective owners.

Document Number: 91000 www.vishay.com Revision: 18-Jul-08 1

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