VISHAY 2N7000KL, BS170KL Technical data

V

查询2N7000KL供应商

2N7000KL/BS170KL

PRODUCT SUMMARY

V

DS

60

S

G

D

(V)

2 @ VGS = 10 V

4 @ VGS = 4.5 V

TO-226AA

(TO-92)

1

2

3

r

DS(on)

(W)

“S” = Siliconix Logo
xxyy = Date Code

New Product

N-Channel 60-V (D-S) MOSFET

FEATURES

D TrenchFETr Power MOSFET

V

GS(th)

1.0 to 2.5

Device Marking

Front View

“S” 2N

7000KL

xxyy

(V) I

(TO-18 Lead Form)

D

G

S

(A)

D

0.47

0.33

TO-92-18RM

1

2

3

D ESD Protected: 2000 V

APPLICATIONS

D Direct Logic-Level Interface: TTL/CMOS
D Soild State Relays
D Drivers: Relays, Solenoids, Lamps, Hammers,

Displays, Memories, Transistors, etc.

D Battery Operated Systems

Device Marking

Front View

“S” BS

170KL

xxyy

“S” = Siliconix Logo
xxyy = Date Code

Vishay Siliconix

D

100 W

G

Top View

Ordering Information: 2N7000KL-TR1

Ordering Information: BS170KL-TR1

Top View

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol Limit Unit

Drain-Source Voltage V

Gate-Source Voltage V

Continuous Drain Current (TJ = 150_C)

Pulsed Drain Current

Power Dissipation

Maximum Junction-to-Ambient R

Operating Junction and Storage Temperature Range TJ, T

a

_

TA = 25_C

TA = 70_C

TA = 25_C

TA = 70_C

I

I

DM

P

thJA

DS

GS

D

D

stg

−55 to 150

60

"20

0.47

0.37

1.0

0.8

0.51

156

S

A

W

_C/W

_C

Notes
a. Pulse width limited by maximum junction temperature.

Document Number: 72705
S-40247—Rev. A, 16-Feb-04

www.vishay.com

1

2N7000KL/BS170KL

b

b

ID ^ 0.25 A

ID ^

V

= 10V

T

Off Ti

g

Vishay Siliconix

New Product

SPECIFICATIONSa (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol Test Conditions Min Typ Max Unit

Static

Drain-Source Breakdown Voltage V

Gate-Threshold Voltage V

Gate-Body Leakage I

Zero Gate Voltage Drain Current I

On-State Drain Current

Drain-Source On-Resistance

Forward Transconductance

Diode Forward Voltage V

Dynamic

b

b

r

(BR)DSS

GS(th)

GSS

DSS

I

D(on)

DS(on)

g

fs

SD

VGS = 0 V, ID = 10 mA

VDS = VGS, ID = 250 mA

VDS = 0 V, VGS = "10 V "1

VDS = 60 V, VGS = 0 V 1

VDS = 60 V, VGS = 0 V, TJ = 55_C

VGS = 10 V, VDS = 7.5 V 0.8

VGS = 4.5 V, VDS = 10 V 0.5

VGS = 10 V, ID = 0.5 A 1.1 2

VGS = 4.5 V, ID = 0.2 A 1.6 4

VDS = 10 V, ID = 0.5 A 550 mS

IS = 0.3 A, VGS = 0 V 0.87 1.3 V

Limits

60

1 2.0 2.5

V

mA

10

mA

A

W

Total Gate Charge Q

Gate-Source Charge Q

Gate-Drain Charge Q

Gate Resistance R

Turn-On Time

-

urn-

me

Notes
a. Pulse test: PW v300 ms duty cycle v2%.
b. Guaranteed by design, not subject to production testing.

t

d(on)

t

d(off)

g

gs

gd

g

t

r

t

f

VDS = 10 V, VGS = 4.5 V

^ 0.25 A

I

D

VDD = 30 V, RL = 150 W

0.2 A,
Rg = 10 W

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

1.0

0.8

0.6

0.4

− Drain Current (A)I
D

0.2

0.0
012345

Output Characteristics Transfer Characteristics

VGS = 10, 7 V

VDS − Drain-to-Source Voltage (V)

6 V

5 V

4 V

3 V

GEN

0.4 0.6

0.11

0.15

173

3.8 10

4.8 15

12.8 20

9.6 15

1.2

TJ = −55_C

0.9

0.6

− Drain Current (A)I
D

0.3

0

0123456

VGS − Gate-to-Source Voltage (V)

nC

W

ns

25_C

125_C

www.vishay.com

2

Document Number: 72705

S-40247—Rev. A, 16-Feb-04