Vishay 15MQ040N Data Sheet
Bulletin PD-20517 rev. H 07/04
15MQ040N
SCHOTTKY RECTIFIER
Major Ratings and Characteristics
Characteristics 15MQ040N Units
IFDC 3 A
V
RRM
I
@ tp = 5 µs sine 330 A
FSM
VF@ 2Apk, TJ=125°C 0.43 V
TJrange - 40 to 150 °C
40 V
3 Amp
I
= 3 Amp
F(AV)
VR = 40V
Description/ Features
The 15MQ040N Schottky rectifier is designed to be used for
low-power applications where a reverse voltage of 40 volts is
ancountered and surface mountable is required.
Applications
Switching power supplies
Meter protection
Reverse protection for power input to PC board circuits
Battery isolation and charging
Low threshold voltage diode
Free-wheeling or by-pass diode
Low voltage clamp
Features
Surface mountable
Extremely low forward voltage
Improved reverse blocking voltage capability relative
to other similar size Schottky
Compact size
www.irf.com
Case Styles
15MQ040N
SMA
1
15MQ040N
Bulletin PD-20517 rev. H 07/04
Voltage Ratings
Part number 15MQ040N
VRMax. DC Reverse Voltage (V)
V
Max. Working Peak Reverse Voltage (V)
RWM
40
Absolute Maximum Ratings
Parameters 15MQ Units Conditions
I
Max. Average Forward Current 2.1 A 50% duty cycle @ TL = 105 °C, rectangular wave form.
F(AV)
* See Fig. 4 On PC board 9mm2 island(.013mm thick copper pad area)
I
Max. Peak One Cycle Non-Repetitive 330 5µs Sine or 3µs Rect. pulse
FSM
A
Surge Current * See Fig. 6 140 10ms Sine or 6ms Rect. pulse
EASNon-Repetitive Avalanche Energy 6.0 mJ TJ = 25 °C, IAS = 1A, L = 12mH
IARRepetitive Avalanche Current 1.0 A
Following any rated
load condition and
with rated V
RRM
Electrical Specifications
Parameters 15MQ Units Conditions
VFMMax. Forward Voltage Drop (1) 0.42 V @ 1A
* See Fig. 1 0.49 V @ 2A
0.34 V @ 1A
0.43 V @ 2A
IRMMax. Reverse Leakage Current (1) 0.5 mA TJ = 25 °C
* See Fig. 2 20 mA TJ = 125 °C
V
Threshold Voltage 0.26 V TJ = TJ max.
F(TO)
rtForward Slope Resistance 64.6 m Ω
CTTypical Junction Capacitance 134 pF VR = 10VDC, TJ = 25°C, test signal = 1Mhz
LSTypical Series Inductance 2.0 nH Measured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change 10000 V/µs (Rated VR)
(1) Pulse Width < 300µs, Duty Cycle < 2%
TJ = 25 °C
TJ = 125 °C
VR = rated V
R
applied
Thermal-Mechanical Specifications
Parameters 15MQ Units Conditions
TJMax. Junction Temperature Range (*) -40 to 150 °C
T
Max. Storage Temperature Range -40 to 150 °C
stg
R
Max. Thermal Resistance Junction 80 °C/W DC operation
thJA
to Ambient
wt Approximate Weight 0.07(0.002) g (oz.)
Case Style SMA Similar D-64
Device Marking IR3F
(*) dPtot 1
< thermal runaway condition for a diode on its own heatsink
dTj Rth( j-a)
2 www.irf.com
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