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ADVANCED ISSUE
R.1.A.990106-HERIC
1617-35
35 Watts, 28 Volts, Pulsed
Radar 1540 - 1660 MHz
GENERAL DESCRIPTION
The 1617-35 is a high power COMMON BASE bipolar transistor. It is
CASE OUTLINE
55AT
designed for pulsed systems in the frequency band 1540 – 1660 MHz. The
transistor includes input and output prematch for broadband performance. The
device has gold thin-film metallization and diffused ballasting for proven
highest MTTF. Low thermal resistance Solder Sealed Package reduces junction
temperature, extends life.
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipation @25°C 290 W
Maximum Voltage and Current
Collector to Base Voltage (BV
Emitter to Base Voltage (BV
Collector Current (I
)6A
c
Maxi mum Temp e r a t u r e s
Storage Temperature -65 to +200°C
Operating J unction Temperature +200°C
ELECTRICAL CHARACTERISTICS @ 25
SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS
P
out
P
in
P
g
η
c
Power Out F = 1660 MHz 35 W
Power Input Vcc = 28 Volts 6 W
Power Gain PW = Note 1 7.6 dB
Collector Efficiency DF = Note 1 50 %
VSWR Load Mismatch Tolerance F = 1540 MHz 10:1
)50V
ces
)3.0 V
ebo
°°°°
C
FUNCTIONAL CHARACTERISTICS @ 25
BV
ebo
BV
ces
h
FE
2
θ
jc
NOTE 1: 5 µs at 15% Duty
2. At rated pulse conditions
.
Initial Issue May 1999
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOT I CE . GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBE D HE REI N ARE
WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc . 3000 Oakmead Village Drive, Santa Clara, CA 95051-0 808 Tel . 408 / 986-8031 Fax 408 / 986 -8120
Emitter to Base Breakdown Ie = 20 mA 3.0 V
Collector to Emitter Breakdown Ic = 60 mA 50 V
DC – Current Gain Vce = 5V, Ic = 500mA 20
Thermal Resistance 0.6
°°°°
C
°
C/W
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