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1618-35
35 Watt - 28 Volts, Class C
Microwave 1600 - 1800 MHz
GENERAL DESCRIPTION CASE OUTLINE
The 1618-35 is a CO M MON BAS E transisto r capabl e of providing 35 Watts
of Class C, RF output power o ver the band 1600-1800 MHz. This transistor is
designed for Microwave Broadband Class C amplifier applications. It includes
Input and Output prematching and utilizes Gold metali zation and diffused
ballasting to provide high reliability and supreme ruggedness. The transistor
uses a fully hermetic High Temperature Solder sealed package.
55AW, STYLE 1
ABSOLUTE MAXIM UM RATINGS
Maximum Powe r Dissipation @ 25 C 135 Watts
Maximum Voltage and Current
BVces Collector to Emitter Voltage 45 Volts
BVebo Emitter to Base Voltage 3.5 Volts
Ic Coll ecto r Current 12 A
Maximum Temperatures
Storage Temperature - 65 to + 200 C
Operating Junction Temperature + 200 C
ELECTRICAL CHARACTERISTICS @ 25 C
o
o
o
O
SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS
Pout
Pin
Pg
η
c
VSWR
Powe r Out F = 1600-1800 MHz
Powe r Input Vcb = 28 Volts
Power Gain Pin = 7 Watts
Collector Efficien cy As Above
1
Load Mi smatch Tolerance F = 1.1 GHz, Pin = 7 W
35 Watt
7 Watt
7.0 dB
40 %
10:1
BVces
BVebo
H
FE
Cob
θ
jc
Issue A, July 1997
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOM M E NDS THAT BEFORE
TH E PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE
PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
Collector to Emitter Breakdown Ic = 20 mA 45 Volts
Emitter to Base Breakdown Ie = 15 mA 3.5 Volts
Current Gain 10 100
Output Capacitance pF
Thermal Resistance 1.3 C/W
Vce = 5 V, Ic = 1 A
F = 1 M Hz, Vcb = 28V
o
GHz Technology Inc. 3000 Oakm ead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
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1618-35
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