Vishay 10ETS08PbF, 10ETS12PbF Data Sheet

10ETS08PbF, 10ETS12PbF High Voltage Series

Vishay Semiconductors

Input Rectifier Diode, 10 A

	Base
	cathode
		2
	1	3
TO-220AC	Cathode	Anode

FEATURES

• Compliant to RoHS directive 2002/95/EC

• Designed and qualified for industrial level

APPLICATIONS

•Input rectification

•Vishay Semiconductors switches and output rectifiers which are available in identical package outlines

PRODUCT SUMMARY

VF at 10 A	< 1.1 V
IFSM	200 A
VRRM	800 V/1200 V

DESCRIPTION

The 10ETS..PbF rectifier series has been optimized for very low forward voltage drop, with moderate leakage.

The glass passivation technology used has reliable operation up to 150 °C junction temperature.

OUTPUT CURRENT IN TYPICAL APPLICATIONS

APPLICATIONS

SINGLE-PHASE BRIDGE

THREE-PHASE BRIDGE

UNITS

Capacitive input filter TA = 55 °C, TJ = 125 °C

12.0

16.0

A

common heatsink of 1 °C/W

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL

CHARACTERISTICS

VALUES

UNITS

IF(AV)

Sinusoidal waveform

10

A

VRRM

800/1200

V

IFSM

200

A

VF

10 A, TJ = 25 °C

1.1

V

TJ

- 40 to 150

°C

VOLTAGE RATINGS

VRRM, MAXIMUM PEAK

VRSM, MAXIMUM NON-REPETITIVE

IRRM

PART NUMBER

REVERSE VOLTAGE

PEAK REVERSE VOLTAGE

AT 150 °C

V

V

mA

10ETS08PbF

800

900

0.5

10ETS12PbF

1200

1300

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum average forward current

IF(AV)

TC = 105 °C, 180° conduction half sine wave

10

Maximum peak one cycle

IFSM

10 ms sine pulse, rated VRRM applied

170

A

non-repetitive surge current

10 ms sine pulse, no voltage reapplied

200

Maximum I2t for fusing

I2t

10 ms sine pulse, rated VRRM applied

130

A2s

10 ms sine pulse, no voltage reapplied

145

Maximum I2 t for fusing

I2 t

t = 0.1 ms to 10 ms, no voltage reapplied

1450

A2 s

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 94337 For technical questions within your region, please contact one of the following:

www.vishay.com

Revision: 22-Jul-10

[e-mail], [e-mail], [e-mail]

1

10ETS08PbF, 10ETS12PbF High Voltage Series

Vishay Semiconductors	Input Rectifier Diode, 10 A
ELECTRICAL SPECIFICATIONS
PARAMETER		SYMBOL			TEST CONDITIONS		VALUES	UNITS
Maximum forward voltage drop		VFM		10 A, TJ = 25 °C			1.1	V
Forward slope resistance		rt		TJ	= 150 °C		20	m
Threshold voltage		VF(TO)					0.82	V
Maximum reverse leakage current		IRM		TJ	= 25 °C	VR = Rated VRRM	0.05	mA
				TJ	= 150 °C		0.50
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER		SYMBOL			TEST CONDITIONS		VALUES	UNITS
Maximum junction and storage temperature range		TJ, TStg					- 40 to 150	°C
Maximum thermal resistance, junction to case		RthJC		DC operation			2.5
Maximum thermal resistance, junction to ambient		RthJA (1)					62	°C/W
(PCB mount)
Soldering temperature		TS					240	°C
Approximate weight							2	g
							0.07	oz.
Marking device				Case style TO-220AC			10ETS08
							10ETS12

Note

(1)When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 μm) copper 40 °C/W For recommended footprint and soldering techniques refer to application note #AN-994

www.vishay.com	For technical questions within your region, please contact one of the following:	Document Number: 94337
2	[e-mail], [e-mail], [e-mail]	Revision: 22-Jul-10

10ETS08PbF, 10ETS12PbF High Voltage Series

Input Rectifier Diode, 10 A

Vishay Semiconductors

		150
					10ETS.. Series
	<![if ! IE]> <![endif]>Case Temperature (°C)	140			RthJC (DC) = 2.5 °C/W
<![if ! IE]> <![endif]>Maximum Allowable		130				Ø
		120				Conduction angle
		110
		100
		90		30°	60°	90°	180°
						120°
		80
		0	2	4	6	8	10	12

Average Forward Current (A)

Fig. 1 - Current Rating Characteristics

		150				10ETS.. Series
		140				RthJC(DC) = 2.5 °C/W
	<![if ! IE]> <![endif]>Case Temperature (°C)
<![if ! IE]> <![endif]>Maximum Allowable		130							Ø
								Conduction period
		120
		110								DC
		100					120°
					60°
				30°				180°
						90°
		90
										16
		0	2	4	6	8	10	12	14		18

		20	DC
		18
			180°
	<![if ! IE]> <![endif]>Forward Power Loss (W)
		16	120°
			90°
<![if ! IE]> <![endif]>Maximum Average
		14	60°
		12	30°
		10
		8
		6						Ø
							Conduction period
		4					10ETS.. Series
					RMS limit		TJ = 150 °C
		2
		0
		0	2	4	6	8	10	12	14	16

Average Forward Current (A)

Fig. 4 - Forward Power Loss Characteristics

	200	At any rated load condition and with
	180	rated VRRM applied following surge.
<![if ! IE]> <![endif]>SineHalfPeakWave CurrentForward(A)			Initial TJ = 150 °C
	160		at 60 Hz 0.0083 s
			at 50 Hz 0.0100 s
	140
	120
	100
	80
	60	10ETS.. Series
	40
	1	10	100

Average Forward Current (A)

Fig. 2 - Current Rating Characteristics

		16	180°
	<![if ! IE]> <![endif]>Forward Power Loss (W)	14	120°
			90°
<![if ! IE]> <![endif]>Maximum Average		12	60°
			30°
		10
		8				RMS limit
		6
		4				Ø
						Conduction angle
		2				10ETS.. Series
		0				TJ = 150 °C
		0	2	4	6	8	10

Average Forward Current (A)

Fig. 3 - Forward Power Loss Characteristics

Number of Equal Amplitude

Half Cycle Current Pulses (N)

Fig. 5 - Maximum Non-Repetitive Surge Current

240

Maximum non-repetitive surge current

		220	versus pulse train duration.
<![if ! IE]> <![endif]>Peak Half Sine Wave	<![if ! IE]> <![endif]>Forward Current (A)	200		Initial TJ = 150 °C
				No voltage reapplied
		180		Rated VRRM reapplied
		160
		140
		120
		100
		80
		60	10ETS.. Series
		40
		0.01	0.1	1.0

Pulse Train Duration (s)

Fig. 6 - Maximum Non-Repetitve Surge Current

Document Number: 94337	For technical questions within your region, please contact one of the following:	www.vishay.com
Revision: 22-Jul-10	[e-mail], [e-mail], [e-mail]	3