Datasheet 10ETS08PbF, 10ETS12PbF DataSheet (Vishay)

Anode

1

2

3

Cathode

TO-220AC

Base

cathode

10ETS08PbF, 10ETS12PbF High Voltage Series

Vishay Semiconductors

Input Rectifier Diode, 10 A

FEATURES

• Compliant to RoHS directive 2002/95/EC

• Designed and qualified for industrial level

APPLICATIONS

• Input rectification

• Vishay Semiconductors switches and output rectifiers
which are available in identical package outlines

PRODUCT SUMMARY

VF at 10 A < 1.1 V

I

FSM

V

RRM

200 A

800 V/1200 V

DESCRIPTION

The 10ETS..PbF rectifier series has been optimized for very
low forward voltage drop, with moderate leakage.

The glass passivation technology used has reliable
operation up to 150 °C junction temperature.

OUTPUT CURRENT IN TYPICAL APPLICATIONS

APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS

Capacitive input filter T
common heatsink of 1 °C/W

= 55 °C, TJ = 125 °C

A

12.0 16.0 A

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL CHARACTERISTICS VALUES UNITS

I

F(AV)

V

I

FSM

V

T

RRM

F

J

Sinusoidal waveform 10 A

800/1200 V

200 A

10 A, TJ = 25 °C 1.1 V

- 40 to 150 °C

VOLTAGE RATINGS

V

, MAXIMUM PEAK

PART NUMBER

10ETS08PbF 800 900

10ETS12PbF 1200 1300

RRM

REVERSE VOLTAGE

V

V

, MAXIMUM NON-REPETITIVE

RSM

PEAK REVERSE VOLTAGE

V

I

RRM

AT 150 °C

mA

0.5

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average forward current I

Maximum peak one cycle
non-repetitive surge current

Maximum I

Maximum I

* Pb containing terminations are not RoHS compliant, exemptions may apply

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Revision: 22-Jul-10 [email protected]

2

t for fusing I2t

2

t for fusing I2t t = 0.1 ms to 10 ms, no voltage reapplied 1450 A2s

F(AV)

I

FSM

TC = 105 °C, 180° conduction half sine wave 10

10 ms sine pulse, rated V

10 ms sine pulse, no voltage reapplied 200

10 ms sine pulse, rated V

10 ms sine pulse, no voltage reapplied 145

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applied 170

RRM

applied 130

RRM

A

2

A

s

10ETS08PbF, 10ETS12PbF High Voltage Series

Vishay Semiconductors

Input Rectifier Diode, 10 A

ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum forward voltage drop V

Forward slope resistance r

Threshold voltage V

Maximum reverse leakage current I

FM

F(TO)

RM

10 A, TJ = 25 °C 1.1 V

t

TJ = 150 °C

TJ = 25 °C

T

= 150 °C 0.50

J

V

= Rated V

R

RRM

20 m

0.82 V

0.05

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum junction and storage temperature range T

Maximum thermal resistance, junction to case R

Maximum thermal resistance, junction to ambient
(PCB mount)

Soldering temperature T

, T

J

Stg

DC operation 2.5

thJC

(1)

R

62

thJA

S

Approximate weight

Marking device Case style TO-220AC

Note

(1)

When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 μm) copper 40 °C/W
For recommended footprint and soldering techniques refer to application note #AN-994

- 40 to 150 °C

240 °C

2g

0.07 oz.

10ETS08

10ETS12

mA

°C/W

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90

150

140

130

120

110

100

4268

16

18

10 12 14

0

Maximum Allowable

Case Temperature (°C)

Average Forward Current (A)

DC

30°

60°

90°

120°

180°

10ETS.. Series
R

thJC

(DC) = 2.5 °C/W

Ø

Conduction period

10ETS08PbF, 10ETS12PbF High Voltage Series

150

140

130

120

110

100

Maximum Allowable

Case Temperature (°C)

90

80

0

2

Average Forward Current (A)

Fig. 1 - Current Rating Characteristics

Fig. 2 - Current Rating Characteristics

10ETS.. Series

R

(DC) = 2.5 °C/W

thJC

Conduction angle

60°

90°

30°

120°

468

Input Rectifier Diode, 10 A

Ø

180°

10

12

Vishay Semiconductors

20

18

16

14

12

10

Maximum Average

Forward Power Loss (W)

200

180

160

140

120

100

80

Forward Current (A)

Peak Half Sine Wave

60

40

DC
180°
120°

90°

60°

30°

8

6

4

2

0

02468

RMS limit

Conduction period

10ETS.. Series
T

J

Average Forward Current (A)

Fig. 4 - Forward Power Loss Characteristics

10ETS.. Series

1

At any rated load condition and with

rated V

applied following surge.

RRM

Initial TJ = 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s

10

Number of Equal Amplitude

Half Cycle Current Pulses (N)

Fig. 5 - Maximum Non-Repetitive Surge Current

Ø

= 150 °C

16141210

100

Maximum Average

Forward Power Loss (W)

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Revision: 22-Jul-10 [email protected]

16

14

12

10

180°
120°

90°
60°
30°

8

6

4

2

0

0

Fig. 3 - Forward Power Loss Characteristics

2468

Average Forward Current (A)

RMS limit

Ø

Conduction angle

10ETS.. Series

= 150 °C

T

J

240

220

200

180

160

140

120

100

Forward Current (A)

Peak Half Sine Wave

80

60

10

40

Maximum non-repetitive surge current

versus pulse train duration.

Initial T

No voltage reapplied

Rated V

10ETS.. Series

0.1 1.00.01

J

RRM

= 150 °C

reapplied

Pulse Train Duration (s)

Fig. 6 - Maximum Non-Repetitve Surge Current

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0.1

1

10

0.0001 0.001 0.01 0.1 1

Square Wave Pulse Duration (s)

Z

thJC

- Transient

Thermal Impedance (°C/W)

10

D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08

Steady state value
(DC operation)

10ETS.. Series

Single pulse

10ETS08PbF, 10ETS12PbF High Voltage Series

Vishay Semiconductors

Input Rectifier Diode, 10 A

100

TJ = 25 °C

10

10ETS.. Series

Instantaneous Forward Current (A)

1

0.5 1.0 1.5 2.0 2.5

0

Instantaneous Forward Voltage (V)

Fig. 7 - Forward Voltage Drop Characteristics

TJ = 150 °C

3.0

Fig. 8 - Thermal Impedance Z

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Characteristics

thJC

1 - Current rating (10 = 10 A)

2 - Circuit configuration:

3 - Package:

4 - Type of silicon:

5 - Voltage code x 100 = V

RRM

6 - None = Standard production

PbF = Lead (Pb)-free

E = Single diode

T = TO-220AC

S = Standard recovery rectifier

08 = 800 V

12 = 1200 V

Device code

51 32 4 6

10 E T S 12 PbF

10ETS08PbF, 10ETS12PbF High Voltage Series

ORDERING INFORMATION TABLE

Input Rectifier Diode, 10 A

Vishay Semiconductors

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95221

Part marking information www.vishay.com/doc?95224

Document Number: 94337 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 22-Jul-10 [email protected]

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Assembly
lot code

xxxxxx

V P119X

AC

TO-220AC

Part number

Product version (optional):
P = Lead (Pb)-free
None = Standard
Date code:
Year 1 = 2001
Week 19
Line X

Part Marking Information

Vishay High Power Products

Example: This is a xxxxxx with
assembly lot code AC,
assembled on WW 19, 2001
in the assembly line “X”

Document Number: 95224 For technical questions concerning discrete products, contact: [email protected]
Revision: 30-Oct-08 For technical questions concerning module products, contact: [email protected]

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1

DIMENSIONS in millimeters and inches

Outline Dimensions

Vishay High Power Products

TO-220AC

D

L3

D1

L4

Plating

A

Base metal

c1 (4)

B

Seating plane

A1

A2

View A - A

CC

E

Thermal pad

D2 (6)

E1 (6)

D

D

L1

A

H1

θ

A

123

3

DD

A

Ø P

Detail B

L1

L

MM

0.015 AB

b, b2

(6) H1

(2)

C

C

(6)

E

Q

21

CC

e1

c

SYMBOL

b1, b3

Section C - C and D - D

MILLIMETERS INCHES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.

(4)

NOTES SYMBOL

2 x b2 2 x b

Detail B

MILLIMETERS INCHES

NOTES

A 3.56 4.82 0.140 0.190 E 9.66 10.66 0.380 0.420 3, 6
A1 0.51 1.40 0.020 0.055 E1 8.38 8.89 0.330 0.350 6
A2 2.04 2.92 0.080 0.115 e 2.54 BSC 0.100 BSC

b 0.38 1.01 0.015 0.040 e1 5.08 BSC 0.200 BSC
b1 0.38 0.96 0.015 0.038 4 H1 5.85 6.86 0.230 0.270 6
b2 1.15 1.77 0.045 0.070 L 12.70 14.73 0.500 0.580
b3 1.15 1.73 0.045 0.068 4 L1 3.55 3.96 0.140 0.150 2

c 0.36 0.61 0.014 0.024 L3 1.78 2.13 0.070 0.084
c1 0.36 0.56 0.014 0.022 4 L4 0.76 1.27 0.030 0.050

D 14.22 15.87 0.560 0.625 3 Ø P 3.54 3.73 0.139 0.147
D1 8.38 9.02 0.330 0.355 Q 2.54 3.05 0.100 0.120
D2 12.19 12.88 0.480 0.507 6 θ 90° to 93° 90° to 93°

Notes

(1)

Dimensioning and tolerancing per ASME Y14.5M-1994

(2)

Lead dimension and finish uncontrolled in L1

(3)

Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body

(4)

Dimension b1, b3 and c1 apply to base metal only

(5)

Controlling dimensions: inches

(6)

Thermal pad contour optional within dimensions E, H1, D2 and E1

(7)

Outline conforms are derived from the actual package outline

Document Number: 95221 For technical questions concerning discrete products, contact: [email protected]

www.vishay.com

Revision: 16-Nov-09 For technical questions concerning module products, contact: [email protected]

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Legal Disclaimer Notice

Vishay

Disclaimer

All product specifications and data are subject to change without notice.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.

Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.

Product names and markings noted herein may be trademarks of their respective owners.

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Revision: 18-Jul-08 1