Vishay 10ETF..S Data Sheet

I2149 rev. A 11/99

QUIETIR Series

10ETF..S

FAST SOFT RECOVERY
RECTIFIER DIODE

Description/Features

The 10ETF..S fast soft recovery QUIETIR rectifier
series has been optimized for combined short

reverse recovery time and low forward voltage

drop.

The glass passivation ensures stable reliable

operation in the most severe temperature and
power cycling conditions.

Typical applications are both:

output rectification and freewheeling in
inverters, choppers and converters
and input rectifications where severe
restrictions on conducted EMI should be met.

Major Ratings and Characteristics

VF< 1.33V @ 10A

t

V

Package Outline

= 80ns

rr

1000 to 1200V

RRM

Characteristics 10ETF..S Units

I

Sinusoidal waveform 10 A

F(AV)

V

range 1000 to 1200 V

RRM

I

FSM

VF@ 10 A, TJ = 25°C 1.33 V

trr@ 1A, 100A/µs 80 ns

TJrange - 40 to 150 °C

www.irf.com

160 A

2

Pak (SMD-220)

D

1

10ETF..S QUIETIR Series

I2149 rev. A 11/99

Voltage Ratings

V

, maximum V

RRM

Part Number

peak reverse voltage peak reverse voltage 150°C

VVmA

10ETF10S 1000 1100 4

10ETF12S 1200 1300

Absolute Maximum Ratings

Parameters 10ETF..S Units Conditions

I

Max. Average Forward Current 10 A @ TC = 125° C, 180° conduction half sine wave

F(AV)

I

Max. Peak One Cycle Non-Repetitive 160 10ms Sine pulse, rated V

FSM

Surge Current 185 10ms Sine pulse, no voltage reapplied

I2t Max. I2t for fusing 128 10ms Sine pulse, rated V

180 10ms Sine pulse, no voltage reapplied

2

√t Max. I2√t for fusing 1800 A2√s t = 0.1 to 10ms, no voltage reapplied

I

A

2

s

A

, maximum non repetitive I

RSM

RRM

RRM

applied

applied

RRM

Electrical Specifications

Parameters 10ETF..S Units Conditions

VFMMax. Forward Voltage Drop 1.33 V @ 10A, TJ = 25°C

rtForward slope resistance 22.9 mΩ TJ = 150°C

V

Threshold voltage 0.96 V

F(TO)

IRMMax. Reverse Leakage Current 0.1 TJ = 25 °C

4T

mA

= 150 °C

J

Recovery Characteristics

Parameters 10ETF..S Units

trrReverse Recovery Time 310 ns IF @ 10Apk

IrrReverse Recovery Current 4.7 A @ 25A/ µs

QrrReverse Recovery Charge 1.05 µC @ 25°C

S Typical Snap Factor 0.6

2

Conditions

VR = rated V

RRM

www.irf.com

10ETF..S QUIETIR Series

Thermal-Mechanical Specifications

Parameters 10ETF..S Units Conditions

TJMax. Junction Temperature Range - 40 to 150 °C

T

Max. Storage Temperature Range - 40 to 150 °C

stg

R

Max. Thermal Resistance Junction 1.5 °C/W DC operation

thJC

to Case

R

Max. Thermal Resistance Junction 62 °C/W

thJA

to Ambient (PCB Mount)**

TsSoldering Temperature 240 °C

wt Approximate Weight 2 (0.07) g (oz.)

Case Style D2Pak (SMD-220)

**When mounted on 1" square (650mm2) PCB of FR-4 or G-10 material 4 oz (140µm) copper 40°C/W

For recommended footprint and soldering techniques refer to application note #AN-994

I2149 rev. A 11/99

150

145

140

135

130

125

120

115

Maximum Allowable Case Temperature (°C)

024681012

Average Forw ard Current (A)

10ETF.. Se ries
R (DC ) = 1.5 °C /W

thJC

Conduction Angle

30°

60°

90°

120°

180°

Fig. 1 - Current Rating Characteristics

16

14

12

10

8

6

4

2

0

Maximum Average Forward Power Loss (W)

180°
120°

90°
60°
30°

RMS Limit

Conduction Angle

10.TF .. Series
T = 150°C

J

0246810

Ave rage Forw ard Current (A)

150

145

140

135

130

125

120

115

M aximum Allowable Case Temperature (°C)

0246810121416

Averag e Fo rw a rd Curre nt (A)

10ETF.. Se rie s
R (DC ) = 1.5 ° C/W

thJC

30°

60°

90°

120°

Conduction Period

180°

Fig. 2 - Current Rating Characteristics

24

DC

180°

20

120°

90°
60°

16

30°

12

RMS Lim it

8

4

0

Maximum Average Forward Power Loss (W)

0246810121416

A ve ra g e Fo rw a rd C urre n t (A )

Conduction Period

1 0ETF.. S eries
T = 150° C

J

Fig. 3 - Forward Power Loss Characteristics Fig. 4 - Forward Power Loss Characteristics

DC

www.irf.com

3