Unity Opto Technology MID-33H22 Datasheet

T-1 PACKAGE
NPN PHOTOTRANSISTOR
MID-33H22
Description Package Dimensions
FLAT DENOTES COLLECTOR
(.040)
(.207)
C
E
The MID-33H22 is a NPN silicon phototransistor mou­nted in a lensed, special dark plastic package. The lens­ing effect of the package allows an acceptance half view
ψ3.00
(.118)
Unit: mm ( inches
angle of 15° that is measured from the optical axis to the half sensitivity point .
Features
l Wide range of collector current l Lensed for high sensitivity l Low cost plastic package l compatible IRED : 850 nm or above l Acceptance view angle : 30
o
1.00
0.50 TYP (.020)
2.54
(.100)
5.25
0.80±0.50
(.032±.020)
23.40MIN. (.920)
1.00MIN (.040)
4.00
(.157)
Absolute Maximum Ratings
Parameter Maximum Rating Unit Power Dissipation 100 mW Collector-Emitter Voltage 30 V Emitter-Collector Voltage 5 V Operating Temperature Range Storage Temperature Range Lead Soldering Temperature
Notes :
1. Tolerance is ± 0.25mm (.010") unless otherwise noted .
2. Protruded resin under flange is 0.8 mm (.031") max
3. Lead spacing is measured where the leads emerge from the package.
@ TA=25oC
-55oC to +100oC
-55oC to +100oC
260oC for 5 seconds
Unity Opto Technology Co., Ltd.
02/04/2002
MID-33H22
Optical-Electrical Characteristics
=850nm
VS LOAD RESISTANCE
VS AMBIENT TEMPERATURE
FIG.5 SENSITIVITY DIAGRAM
70°
60°
50°
80
VS IRRADIANCE
40°
Parameter Test Conditions Symbol Min. Typ . Max. Unit Collector-Emitter Breakdown Voltage Ee=0 Emitter-Collector Ie=0.1mA Breakdown Voltage Ee=0 Collector-Emitter Saturation Voltage Rise Time Fall Time Collector Dark Current Ee=0 On State Collector Current
Ic=0.1mA
Ic=0.5mA, λ Ee=0.1mW/cm
V
CC
IC=1mA VCE=10V
VCE=5V, λ=850nm Ee=0.1mW/cm
2
=5V, RL=1K
2
V
(BR)CEO
V
(BR)ECO
V
CE(SAT)
30
5
Tr 15 Tf 15
I
CEO
I
C(ON)
@ TA=25oC
V
V
V0.4
µS
nA100
2 mA
Typical Optical-Electrical Characteristic Curves
A
µ
1000
100
10
1
0.1
0.01
0.001 0 40 80 120
TA- Ambient Temperature -oC
FIG.1 COLLECTOR DARK CURRENT
Iceo-Collector Dark Current -
S
µ
200
Vcc = 5 V
160
VRL= 1 V F = 100 Hz
120
PW = 1 ms
80 40
0
0 2 4 6 8 10
Tr Tf Rise and Fall Time -
RL - Load Resistance - K
FIG.3 RISE AND FALL TIME
0° 10° 20°
4.0
Vce = 5 V
3.5
Ee = 0.1 mW/cm
3.0
@λ= 850 nm
2.5
2.0
1.5
1.0
0.5
0.0
Normalized Collector Current I
FIG.2 NORMALIZED COLLECTOR CURRENT
-75 -25 25 75 125
TA - Ambient Temperature - oC
C
2
VS AMBIENT TEMPERATURE
10
Vce = 5 V
8 6 4 2 0
0 0.1 0.2 0.3 0.4 0.5 0.6
Relative Collector Current (mA)
FIG.4 RELATIVE COLLECTOR CURRENT
Ee - Irradiance - mW/cm
30°
2
Unity Opto Technology Co., Ltd.
1.0
0.9
0.8
Relative Sensitivity
0.5 0.3 0.1 0.2 0.4 0.6
90°
02/04/2002
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