Unity Opto Technology MID-32A22 Datasheet
T-1 PACKAGE
NPN PHOTOTRANSISTOR
MID-32A22
Description Package Dimensions
C
E
The MID-32A22 is a NPN silicon phototransistor mounted in a lensed , special dark plastic package. The lensing effect of the package allows an acceptance half view
φ 3.55±0.25
(.140±.010)
φ 3.10±0.20
(.122±.008)
Unit : mm (inches )
angle of 20° that is measured from the optical axis to
the half power point .
Features
l Wide range of collector current
l Lensed for high sensitivity
l Low cost plastic package
l Good spectral matching IRED (λp 940 nm) type
l Acceptance view angle : 40
o
4.28±0.20
(.169±.008)
5.28±0.30
(.208±.012)
23.40MIN
(.920)
0.50 TYP.
(.020)
2.54
(.100)
Notes :
1. Tolerance is ± 0.25mm (.010") unless otherwise noted .
2. Protruded resin under flange is 1.5 mm (.059") max
3. Lead spacing is measured where the leads emerge from the package.
1.00MIN
(.040)
3.85
(.152)
Absolute Maximum Ratings
Parameter Maximum Rating Unit
Power Dissipation 100 mW
Collector-Emitter Voltage 30 V
Emitter-Collector Voltage 5 V
Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature
Unity Opto Technology Co., Ltd.
@ TA=25oC
-55oC to +100oC
-55oC to +100oC
260oC for 5 seconds
02/04/2002
MID-32A22
Optical-Electrical Characteristics
2
Ω
2
Vce = 5 V
VS AMBIENT TEMPERATURE
VS. WAVELENGTH
0° 10° 20°
0.5 0.3 0.1 0.2 0.4 0.6
70°
50°
80
Parameter Symbol Min. Typ. Max. Unit
Collector-Emitter
Ic=0.1mA
Breakdown Voltage Ee=0
Emitter-Collector Ie=0.1mA
Breakdown Voltage Ee=0
Collector-Emitter
Ic=0.5mA
Saturation Voltage Ee=0.1mW/cm
Rise Time
Fall Time
Collector Dark
V
IC=1mA
VCE=10V
Current Ee=0
On State Collector
VCE=5V
Current Ee=0.1mW/cm
Test Conditions
=5V, RL=1K
CC
V
(BR)CEO
V
(BR)ECO
V
CE(SAT)
30 V
5
Tr 15
Tf 15
I
CEO
I
C(ON)
0.4
@ TA=25oC
0.4 V
100
mΑ
V
µS
nA
Typical Optical-Electrical Characteristic Curves
A
µ
1000
100
10
1
0.1
0.01
0.001
0 40 80 120
TA - Ambient Temperature - oC
Iceo-Collector Dark Current -
FIG.1 COLLECTOR DARK CURRENT
VS AMBIENT TEMPERATURE
S
µ
200
Vcc = 5 V
VRL= 1 V
160
F = 100 Hz
120
PW = 1 ms
80
40
0
Tr Tf Rise and Fall Time -
Relative Spectral Sensitivity
FIG.5 RELATIVE SPECTRAL SENSITIVITY
0 2 4 6 8 10
RL - Load Resistance - KΩ
FIG.3 RISE AND FALL TIME
VS LOAD RESISTANCE
100%
90%
80%
70%
60%
50%
40%
30%
20%
10%
0%
600 700 800 900 1000
Wavelength-nm
4.0
Vce = 5 V
3.5
Ee = 0.1 mW/cm
3.0
@λ= 940 nm
2.5
2.0
1.5
1.0
0.5
0.0
-75 -25 25 75 125
Normalized Collector Current
TA - Ambient Temperature -oC
C
I
FIG.2 NORMALIZED COLLECTOR CURRENT
10
8
6
4
2
0
0 0.1 0.2 0.3 0.4 0.5 0.6
Relative Collector Current (mA)
FIG.4 RELATIVE COLLECTOR CURRENT
Ee - Irradiance - mW/cm
2
2
VS IRRADIANCE
30°
40°
1.0
0.9
0.8
Relative Sensitivity
60°
90°
FIG.6 SENSITIVITY DIAGRAM
Unity Opto Technology Co., Ltd.
02/04/2002
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