UCC1776
Quad FET Driver
FEATURES
•High Peak Output Current Each Output – 1.5A Source, 2.0A Sink
•Wide Operating Voltage Range 4.5V to 18V
•Thermal Shutdown
•CMOS Compatible Inputs
•Outputs Are Active Low for Undervoltage Lockout Condition
BLOCK DIAGRAM
UCC1776
UCC2776
UCC3776
PRELIMINARY
DESCRIPTION
The UCC3776 is a four output BCDMOS buffer/driver designed to drive highly capacitive loads such as power MOSFET gates at high speeds. The device can be configured as either an inverting or non-inverting driver via the POL pin. The outputs are enabled by ENBL. When disabled, all outputs are active low. The device incorporates thermal shutdown with hysteresis for stability. The device also includes an undervoltage lockout circuit (UVLO) with hysteresis which disables the outputs when VDD is below a preset threshold. The outputs are held low during undervoltage lockout, even in the absence of VDD power to the device. This helps prevent MOSFET turn-on due to capacitive current through the gate-drain capacitance of the power MOSFET in the presence of high dV/dts. The logic input thresholds are compatible with standard 5V HCMOS logic.
Note: Pin connections shown refer to 16-pin packages.
3/97
UDG-95129-2
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UCC1776
UCC2776
UCC3776
ABSOLUTE MAXIMUM RATINGS
Input Supply Voltage, VDD1, VDD2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20V
Maximum DC Voltage Difference, VDD1 vs. VDD2 . . . . . . . . . . . . . . . . . . . . . . .100mV
Logic Input, IN1, IN4, ENBL
Maximum forced voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .−0.3 to VDD1 + 0.3V
Logic Inputs, IN2, IN3, POL
Maximum forced voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .−0.3 to VDD2 + 0.3V
Latch-up Protection withstand Reverse Current
IREV, OUT1, OUT2, OUT3, OUT4 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .500mA
Power Outputs, OUT1, OUT2, OUT3, OUT4
Maximum pulsed current (10% duty max, 10μsec max pulse width) . . . . . . . . . .3A
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .−65°C to +150°C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . .−55°C to +150°C
Lead Temperature (Soldering, 10 Seconds) . . . . . . . . . . . . . . . . . . . . . . . . . . . . .300°C
All currents are positive into, negative out of the specified terminal. Consult Packaging
Section of Databook for thermal limitations and considerations of packages.
CONNECTION DIAGRAMS
DIL-16 (Top View)
N or J, DP Packages
PLCC-28 (Top View)
Q Package
ELECTRICAL CHARACTERISTICS Unless otherwise stated these specifications apply for TA = −55°C to +125°C for UCC1776; −40°C to +85°C for UCC2776; 0°C to +70°C for UCC3776;VPOL = 5V, VENBL = 5V, 4.5V < VDD < 18V, TJ = TA.
PARAMETER |
TEST CONDITIONS |
MIN |
TYP |
MAX |
UNITS |
Input Section |
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VIH, Logic 1 Input Voltage |
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3 |
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V |
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VIL, Logic 0 Input Voltage |
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2 |
V |
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IINn, Input Current |
VINn = 5V |
|
|
30 |
μA |
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VINn = 0V |
–1 |
|
+1 |
μA |
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ENBL Input Current |
VENBL = 5V |
|
|
30 |
μA |
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VENBL = 0V |
–1 |
|
+1 |
μA |
POL Input Current |
VPOL = 5V |
−1 |
|
+1 |
μA |
|
VPOL = 0V |
−30 |
|
|
μA |
2
UCC1776
UCC2776
UCC3776
ELECTRICAL CHARACTERISTICS (cont.) Unless otherwise stated these specifications apply for TA = −55°C to +125°C for UCC1776; −40°C to +85°C for UCC2776; 0°C to +70°C for UCC3776;VPOL = 5V, VENBL = 5V, 4.5V < VDD < 18V, TJ = TA.
PARAMETERTEST CONDITIONS |
|
MIN |
TYP |
MAX |
UNITS |
Output Section |
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VOH, High Output Voltage |
IOUTn = -10mA, VDD1 = VDD2 = 12V, VINn = 5V |
VDD− 1.0 |
|
|
V |
VOL, Low Output Voltage |
IOUTn = 10mA, VDD1 = VDD2 = 12V, VINn = 0V |
|
|
0.15 |
V |
Output Resistance |
IOUTn = 10mA, VDD1 = VDD2 = 12V, VINn = 0V |
|
6 |
|
Ω |
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Output High Peak Current |
VDD1 = VDD2 = 12V, OUTn = 5V, VINn = 5V, |
|
−1.5 |
|
A |
|
TJ = 25°C (Note 1) |
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Output Low Peak Current |
VDD1 = VDD2 = 12V, OUTn = 5V, VINn = 0V, |
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2.0 |
|
A |
|
TJ = 25°C (Note 1) |
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UVLO Output Pull-down Voltage |
VDD1 = VDD2 = 3V, IOUTn = −10mA |
|
0.8 |
1.5 |
V |
Switching Time Section |
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Output Rise Time |
COUTn = 1nF, VOUTn = 1V to 9V, |
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VDD1 = VDD2 = 12V |
|
25 |
50 |
nsec |
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Output Fall Time |
COUTn = 1nF, VOUTn = 9V to 1V, |
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VDD1 = VDD2 = 12V |
|
10 |
50 |
nsec |
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IN−>OUT Delay Time (Rising Output) |
VINn = 2.5V, VOUTn = 0.1 • VDD, |
|
40 |
100 |
nsec |
|
VDD1 = VDD2 = 12, COUTn = 0nF |
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IN−>OUT Delay Time (Falling Output) |
VINn = 2.5V, VOUTn = 0.9 • VDD, |
|
50 |
100 |
nsec |
|
VDD1 = VDD2 = 12V, COUTn = 0nF |
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Power Supply Section |
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Power Supply Current |
V(IN1−IN4) = 0V, VENBL = 0V, |
|
|
2 |
mA |
|
VDD1 = VDD2 = 12V |
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UVLO Threshold |
|
|
|
4.5 |
V |
UVLO Hysteresis |
|
|
0.5 |
|
V |
Note 1: Guaranteed by design. Not 100% tested in production.
PIN DESCRIPTIONS
ENBL: Logic level input to enable the drivers. When ENBL is low, the drivers outputs will be at GND potential, regardless of the status of POL. The input threshold is designed to be 5 volt CMOS compatible, independent of the VDD voltage used on the device. There is a slight hysteresis in the input circuit to help reduce sensitivity to noise on the input signal or input ground.
GND: Ground for the device, the supply return for the VDDs.There are four GND pads on the device.
IN1 - IN4: Inputs to each driver (1-4). The input threshold is designed to be 5 volt CMOS compatible, independent of the VDD voltage used on the device. There is a slight hysteresis in the input circuit to help reduce sensitivity to noise.
APPLICATION INFORMATION
Figure 1 depicts a block diagram of the UCC3776 Quad FET Driver. Four high current, high speed gate drivers with CMOS compatible input stages are provided. Polarity select and enable inputs provide circuit integra-
OUT1 - OUT4: Outputs to each driver (1-4). The outputs are totem pole DMOS circuits. In the absence of VDD on the device, the outputs will stay off, even with a capacitive displacement current into the output node.
POL: Polarity selection for the drivers. A logic 0 selects inverting operation. A logic 1 selects non-inverting operation. The input threshold is designed to be 5 volt CMOS compatible, independent of the VDD voltage used on the device. There is a slight hysteresis in the input circuit to help reduce sensitivity to noise.
VDD1: Supply Voltage for drivers 1 and 4. Tied internally to VDD2.
VDD2: Supply Voltage for drivers 2 and 3. Tied internally to VDD1.
tion flexibility, while power packaging and high speed drive circuitry allow for driving high power MOSFET gates in high speed applications.
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