DESCRIPTION
This eight-diode array is designed for high-current, low duty-cycle applications
typical of flyback voltage clamping for inductive loads. The dual bridge connection
makes this device particularly applicable to bipolar driven stepper motors.
The use of Schottky diode technology features high efficiency through lowered forward voltage drop and decreased reverse recovery time.
This single monolithic chip is fabricated in both hermetic CERDIP and copperleaded plastic packages. The UC1610 in ceramic is designed for -55°C to +125°C
environments but with reduced peak current capability. The UC2610 in plastic and
ceramic is desi gned for -25°C to +125°C environments also with reduced peak
current capability; while the UC3610 in plastic has higher current rating over a 0°C
to +70°C temperature range.
查询UC1610供应商
Dual Schottky Diode Bridge
FEATURES
• Monolithic Eight-Diode Array
• Exceptional Efficiency
• Low Forward Voltage
• Fast Recovery Time
• High Peak Current
• Small Size
ABSOLUTE MAXIMUM RATINGS
Peak Inverse Voltage (per diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
Peak Forward Current
UC1610 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
UC2610 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
UC3610 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A
Power Dissipation at T
Storage Tempe rature Rang e. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C
Lead Temperat ure (Solde ring, 10 Sec onds ). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300°C
Note: Consult Packaging Sec tion of Databook f or thermal limitations and con sider at ions of
package.
CONNECTION DIAGRAMS
UC1610
UC2610
UC3610
A = +70°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
DIL-8 (TOP VIEW)
N or J Package
PLCC-20 (TOP VIEW)
Q Package
3/95
SOIC-16 (TOP VIEW)
DW Package
UC1610
UC2610
UC3610
ELECTRICAL CHARACTERISTICS:
All specifications ap ply to each individu al diode. TJ = 25°C except as noted. TA = TJ.
PARAMETER TEST CONDITIONS MIN TYP MAX UNITS
Forward Voltage Dro p I
Leakage Current V
F = 100mA 0.35 0.5 0.7 V
I
F = 1A 0.8 1.0 1.3 V
R = 40V .01 0.1 mA
V
R = 40V, TJ = +100°C 0.1 1.0 mA
Reverse Recovery 0.5A Forward to 0.5A Revers e 15 ns
Forward Recovery 1A Forward to 1.1V Recovery 30 ns
Junction Capacitance V
R = 5V 70 pF
Note: At forwar d curre nt s of grea ter than 1. 0A a parasit ic current of appr oxim at ely 10m A may be collected by adjacen t diodes.
Reverse Current vs V oltage Forward Curren t vs Voltage
UNITRODE INTEGRATED CIRCUITS
7 CONTINENTAL BLVD. • MERRI MACK , NH 0305 4
TEL. (603) 424-2410 • FAX (603) 424-3460
Forward Recovery CharacteristicsReverse Recovery Characteristics
2
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