TS MMBTA05 Schematic [ru]
Small Signal Product
Features
◇Epitaxial planar die construction
◇Surface device type mounting
◇Moisture sensitivity level 1
◇Driver Transistor
◇Pb free version and RoHS compliant
◇Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
Mechanical Data
◇Case:SOT-23 small outline plastic package
per MIL-STD-202, Method 208 guaranteed
◇High temperature soldering guaranteed:260℃/10s
◇Weight: 7.888mg
MMBTA05
NPN Transistor
SOT-23
Ordering Information (example)
Part No.
Package Packing
MMBTA05 SOT-23 3K / 7" Reel
Packing code
RU RUG 1H M0
Note：Detail please see "Ordering Information(detail, example)" below.
Packing code
(Green)
Marking
Maximum Ratings and Electrical Characteristics
Absolute Maximum Ratings (TA=25℃)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current- Continuous 0.5
Collector Power Dissipation
Junction Temperature 150
Storage Temperature Range
Symbol Units
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Characteristics at TA=25℃
Parameter
Collector Base Breakdown Voltage
Collector Emitter Breakdown Voltage
Emitter Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
at V
=1V, IC=10mA
DC Current Gain
Collector Emitter
Saturation Voltage
Base-emitter Voltage
Transition Frequency
CE
at V
=1V, IC=100mA
CE
at I
=50mA, IB=5mA V
C
=1V, IC=100mA
at V
CE
=2V, IC=10mA, f=100MHz
at V
CE
=100uA, IE=0
at I
C
=1mA, IB=0
at I
C
=100uA, IC=0
at I
E
at V
=60V, IE=0
CB
=60V, IB=0
at V
CE
at V
=3V, IC=0
EB
Symbol Units
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE
h
FE
CE(sat)
V
BE
f
T
Min. Typ. Max.
60
60 - -
4--
--0.1
-
--
100 - 400
100 - -
- - 0.25
-
100 - -
Value
60
60
4
300
- 55 to + 150
--
-0.1
-1.2
Manufacture code
0.1
V
V
V
A
mW
O
C
O
C
V
V
V
uA
uA
uA
V
V
MHz
Version：A13
Small Signal Product
FIG.1 Static Characteristic
35
COMMON EMMITT ER
TA=25℃
30
25
20
15
10
5
Ic(mA), COLLECTOR CURRENT
0
01234
VCE(V), COLLECTOR EMITTER VOLTAGE
FIG. 3 V
BE(sat) -IC
1000
800
TA=25℃
200uA
180uA
160uA
140uA
120uA
100uA
80uA
60uA
40uA
IE=20uA
FE
DC CURRENT GAIN, h
FIG. 2 hFE-I
C
1000
TA=100℃
100
TA=25℃
COMMON EMMITTER
V
=1V
CE
10
0.1 1.0 10.0 100.0 1000.0
COLLECTOR CURRENT IC(mA)
FIG. 4 V
CE(sat)-IC
1000
600
(mV)
BE(sat)
400
TA=100℃
200
VOLTAGE, V
BASE-EMITTER SATUTATION
0
0.1 1 10 100 1000
Ic(mA), COLLECTOR CURRENT
FIG. 5 IC-V
BE
1000
COMMON EMMITTER
V
=1V
CE
100
10
TA=100℃
TA=25℃
β=10
COLLECTOR-EMITTER SATURATION
1000
100
(sat),
100
CE
VOLTAGE, V
TA=100℃
TA=25℃
10
0.1 1 10 100 1000
Ic(mA), COLLECTOR CURRENT
FIG. 6 fT-I
C
β=10
1
(MHz), TRANSTION FREQUENCY
COLLECTOR CURRENT, IC(mA)
0.1
0 200 400 600 800 1000
VBE(V), BASE EMITTER VOLTAGE
T
f
10
0 10203040506070
Ic(mA), COLLECTOR CURRENT
COMMON EMMITTER
V
=2V
CE
=25℃
T
A
Version:A13
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