Symbol
Function
A0~A15
Register address input
BA0, BA1
Register bank select input
BG0, BG1
Register bank group select input
RAS_n
Register row address strobe input
CAS_n
Register column address strobe
input
WE_n
Register write enable input
CS0_n, CS1_n,
CS2_n, CS3_n
DIMM Rank Select Lines input
CKE0, CKE1
Register clock enable lines input
ODT0, ODT1
Register on-die termination control
lines input
ACT_n
Register input for activate input
DQ0~Q63
DIMM memory data bus
CB0~B7
DIMM ECC check bits
TDQS9_t~TDQS17_t
TDQS9_c~TDQS17_c
Dummy loads for mixed populations
of x4 based and x8 based RDIMMs.
DQS0_t~DQS17_t
Data Buffer data strobes
(positive line of differential pair)
DQS0_c~DQS17_c
Data Buffer data strobes
(negative line of differential pair)
CK0_t, CK1_t
Register clock input (positive line of
differential pair)
CK0_c, CK1_c
Register clocks input (negative line
of differential pair)
SCL
I2C serial bus clock for SPD/TS
and register
SDA
I2C serial bus data line for SPD/TS
and register
SA0~SA2
I2C slave address select for
SPD/TS and register
PAR
Register parity input
VDD
SDRAM core power supply
VREFCA
SDRAM command/address
reference supply
VSS
Power supply return (ground)
VDDSPD
Serial SPD/TS positive power
supply
ALERT_n
Register ALERT_n output
VPP
SDRAM activating power supply
RESET_n
Set Register and SDRAMs to a
Known State
EVENT_n
SPD signals a thermal event has
occurred.
VTT
SDRAM I/O termination supply
RFU
Reserved for future use
NC
No Connection
DDR4
TS1GHR72V1Z
TS2GHR72V1Z
288Pin DDR4 2133 RDIMM
8GB~16GB Based on 1Gx4
Description
DDR4 Registered DIMM is high-speed, low power
memory module that use 1Gx4bits DDR4 SDRAM in
FBGA package and a 4Kbits serial EEPROM on a
288-pin printed circuit board. DDR4 Registered DIMM is a
Dual In-Line Memory Module and is intended for
mounting into 288-pin edge connector sockets.
Synchronous design allows precise cycle control with the
use of system clock. Data I/O transactions are possible
on both edges of DQS. Range of operation frequencies,
On DIMM Thermal Sensor
Pin Identification
programmable latencies allow the same device to be
useful for a variety of high bandwidth, high performance
memory system applications.
Features
RoHS compliant products.
JEDEC standard 1.2V ± 0.06V power supply
VDDQ=1.2V ± 0.06V
Clock Freq: 1067MHZ for 2133Mb/s/Pin.
Programmable CAS Latency: 10,11,12,13,14,15,16
Programmable Additive Latency (Posted /CAS):
0,CL-2 or CL-1 clock
Programmable /CAS Write Latency (CWL)
= 11, 14(DDR4-2133)
8 bit pre-fetch
Burst Length: 4, 8
Bi-directional Differential Data-Strobe
On Die Termination with ODT pin
Serial presence detect with EEPROM
Dimensions (Unit: millimeter)
Note:
1. Tolerances on all dimensions +/-0.15mm unless otherwise specified.
Pin
No
Pin
Name
Pin
No
Pin
Name
Pin
No
Pin
Name
Pin
No
Pin
Name
Pin
No
Pin
Name
Pin
No
Pin
Name
Pin
No
Pin
Name
Pin
No
Pin
Name
1
12V3,NC
37
VSS
73
VDD
109
VSS
145
12V3,NC
181
DQ29
217
VDD
253
DQ41
2
VSS
38
DQ24
74
CK0_t
110
TDQS14_t,
DQS14_t
146
VREFCA
182
VSS
218
CK1_t
254
VSS
3
DQ4
39
VSS
75
CK0_c
111
TDQS14_c,
DQS14_c
147
VSS
183
DQ25
219
CK1_c
255
DQS5_c
4
VSS
40
TDQS12_t,
DQS12_t
76
VDD
112
VSS
148
DQ5
184
VSS
220
VDD
256
DQS5_t
5
DQ0
41
TDQS12_c,
DQS12_c
77
VTT
113
DQ46
149
VSS
185
DQS3_c
221
VTT
257
VSS
6
VSS
42
VSS
78
EVENT_n
114
VSS
150
DQ1
186
DQS3_t
222
PARITY
258
DQ47
7
TDQS9_t,
DQS9_t
43
DQ30
79
A0
115
DQ42
151
VSS
187
VSS
223
VDD
259
VSS
8
TDQS9_c,
DQS9_c
44
VSS
80
VDD
116
VSS
152
DQS0_c
188
DQ31
224
BA1
260
DQ43
9
VSS
45
DQ26
81
BA0
117
DQ52
153
DQS0_t
189
VSS
225
A10/AP
261
VSS
10
DQ6
46
VSS
82
RAS_n/A16
118
VSS
154
VSS
190
DQ27
226
VDD
262
DQ53
11
VSS
47
CB4
83
VDD
119
DQ48
155
DQ7
191
VSS
227
RFU
263
VSS
12
DQ2
48
VSS
84
S0_n
120
VSS
156
VSS
192
CB5
228
WE_n/A14
264
DQ49
13
VSS
49
CB0
85
VDD
121
TDQS15_t,
DQS15_t
157
DQ3
193
VSS
229
VDD
265
VSS
14
DQ12
50
VSS
86
CAS_n/A15
122
TDQS15_c,
DQS15_c
158
VSS
194
CB1
230
NC
266
DQS6_c
15
VSS
51
TDQS17_t,
DQS17_t
87
ODT0
123
VSS
159
DQ13
195
VSS
231
VDD
267
DQS6_t
16
DQ8
52
TDQS17_c,
DQS17_c
88
VDD
124
DQ54
160
VSS
196
DQS8_c
232
A13
268
VSS
17
VSS
53
VSS
89
S1_n
125
VSS
161
DQ9
197
DQS8_t
233
VDD
269
DQ55
18
TDQS10_t,
DQS10_t
54
CB6
90
VDD
126
DQ50
162
VSS
198
VSS
234
A17
270
VSS
19
TDQS10_c,
DQS10_c
55
VSS
91
ODT1
127
VSS
163
DQS1_c
199
CB7
235
NC,C2
271
DQ51
20
VSS
56
CB2
92
VDD
128
DQ60
164
DQS1_t
200
VSS
236
VDD
272
VSS
21
DQ14
57
VSS
93
C0,CS2_n,NC
129
VSS
165
VSS
201
CB3
237
NC,CS3_c,C1
273
DQ61
22
VSS
58
RESET_n
94
VSS
130
DQ56
166
DQ15
202
VSS
238
SA2
274
VSS
23
DQ10
59
VDD
95
DQ36
131
VSS
167
VSS
203
CKE1
239
VSS
275
DQ57
24
VSS
60
CKE0
96
VSS
132
TDQS16_t,
DQS16_t
168
DQ11
204
VDD
240
DQ37
276
VSS
25
DQ20
61
VDD
97
DQ32
133
TDQS16_c,
DQS16_c
169
VSS
205
RFU
241
VSS
277
DQS7_c
26
VSS
62
ACT_n
98
VSS
134
VSS
170
DQ21
206
VDD
242
DQ33
278
DQS7_t
27
DQ16
63
BG0
99
TDQS13_t,
DQS13_t
135
DQ62
171
VSS
207
BG1
243
VSS
279
VSS
28
VSS
64
VDD
100
TDQS13_c,
DQS13_c
136
VSS
172
DQ17
208
ALERT_n
244
DQS4_c
280
DQ63
29
TDQS11_t,
DQS11_t
65
A12/BC_n
101
VSS
137
DQ58
173
VSS
209
VDD
245
DQS4_t
281
VSS
30
TDQS11_c,
DQS11_c
66
A9
102
DQ38
138
VSS
174
DQS2_c
210
A11
246
VSS
282
DQ59
31
VSS
67
VDD
103
VSS
139
SA0
175
DQS2_t
211
A7
247
DQ39
283
VSS
32
DQ22
68
A8
104
DQ34
140
SA1
176
VSS
212
VDD
248
VSS
284
VDDSPD
33
VSS
69
A6
105
VSS
141
SCL
177
DQ23
213
A5
249
DQ35
285
SDA
34
DQ18
70
VDD
106
DQ44
142
VPP
178
VSS
214
A4
250
VSS
286
VPP
35
VSS
71
A3
107
VSS
143
VPP
179
DQ19
215
VDD
251
DQ45
287
VPP
36
DQ28
72
A1
108
DQ40
144
RFU
180
VSS
216
A2
252
VSS
288
VPP4
Note:
1. VPP is 2.5V DC
2. Pin 230 is defined as NC for UDIMMs, RDIMMs and LRDIMMs. Pin 230 is defined as SAVE_n for NVDIMMs.
3. Pins 1 and 145 are defined as NC for UDIMMs, RDIMMs and LRDIMMs. Pins 1 and 145 are defined as 12V for Hybrid /NVDIMM
4. The 5th VPP is required on all modules, DIMMs.
Pin Assignments
Block Diagram
8GB, 1Gx72 Module(1 Rank x4)
Block Diagram
16GB, 2Gx72 Module(2 Rank x4)
This technical information is based on industry standard data and tests believed to be reliable. However, Transcend makes no warranties, either
expressed or implied, as to its accuracy and assume no liability in connection with the use of this product. Transcend reserves the right to make changes
in specifications at any time without prior notice.
Parameter
Symbol
Rating
Unit
Note
Operating Temperature
TOPER
0 to 85
℃
1,2
Note:
1. Operating Temperature is the case surface temperature on the center/top side of the DRAM. For the
measurement conditions, please refer to JESD51-2 standard.
2. At 0 - 85℃, operation temperature range are the temperature which all DRAM specification will be
supported.
Parameter
Symbol
Value
Unit
Note
Voltage on VDD relative to Vss
VDD
-0.3 ~ 1.5
V
1
Voltage on VDDQ pin relative to Vss
VDDQ
-0.3 ~ 1.5
V
1
Voltage on VPP pin relative to Vss
VPP
-0.3 ~ 3.0
V
3
Voltage on any pin relative to Vss
VIN, VOUT
-0.3 ~ 1.5
V
1
Storage temperature
TSTG
-55~+100
℃
1,2
Note:
1. Stress greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
2. Storage Temperature is the case surface temperature on the center/top side of the DRAM. For the
measurement conditions, please refer to JESD51-2 standard.
3. VPP must be equal or greater than VDD/VDDQ at all times.
Parameter
Symbol
Rating
Unit
Notes
Min
Typ.
Max
Supply voltage
VDD
1.14
1.2
1.26
V
1, 2
Supply voltage for Output
VDDQ
1.14
1.2
1.26
V
1, 2
Wordline supply voltage
VPP
2.375
2.5
2.75
V
3
Note:
1. Under all conditions VDDQ must be less than or equal to VDD.
2. VDDQ tracks with VDD, AC parameters are measured with VDD and VDDQ tied together.
3. DC bandwidth is limited to 20MHz
Parameter
Symbol
DDR4-1600/1866/2133
Unit
Note
Min
Max
I/O Reference Voltage (CMD/ADD)
VREFCA(DC)
0.49*VDDQ
0.51*VDDQ
V
1,2
DC Input Logic High
VIH(DC)
VREF+0.075
VDD
V
DC Input Logic Low
VIL(DC)
VSS
VREF-0.075
V
AC Input Logic High
VIH(AC)
VREF+0.1
Note 1
V
AC Input Logic Low
VIL(AC)
Note 1
VREF-0.1
V
Note:
1. The AC peak noise on VREFCA may not allow VREFCA to deviate from VREFCA(DC) by more than ± 1%
VDD (for reference : approx. ± 12mV)
2. For reference : approx. VDD/2 ± 12mV
Operating Temperature Condition
Absolute Maximum DC Ratings
AC & DC Operating Conditions
Recommended DC operating conditions
Single-ended AC & DC input levels for Command and Address
Parameter
Symbol
DDR4-1600/1866/2133
Unit
Note
Min
Max
differential input high DC
VIHdiff(DC)
+0.150
NOTE 3
V 1 differential input low DC
VILdiff(DC)
NOTE 3
-0.150
V
1
differential input high AC
VIHdiff(AC)
2 x (VIH(AC) - VREF)
NOTE 3
V 2 differential input low AC
VILdiff(AC)
NOTE 3
2 x (VIL(AC) -VREF)
V
2
Note:
1. Used to define a differential signal slew-rate.
2. for CK_t - CK_c use VIH.CA/VIL.CA(AC) of ADD/CMD and VREFCA;
3. These values are not defined; however, the differential signals CK_t - CK_c, need to be within the respective
limits (VIH.CA(DC) max, VIL.CA(DC)min) for single-ended signals as well as the limitations for overshoot
and undershoot.
Parameter
Symbol
DDR4-1600/1866/2133
Unit
Note
DC output high measurement level
VOH(DC)
1.1 x VDDQ
V
DC output mid measurement level
VOM(DC)
0.8 x VDDQ
V DC output low measurement level
VOL(DC)
0.5 x VDDQ
V AC output high measurement level
VOH(AC)
(0.7 + 0.15) x VDDQ
V 1 AC output low measurement level
VOL(AC)
(0.7 - 0.15) x VDDQ
V
1
Note:
1. The swing of ± 0.15 × VDDQ is based on approximately 50% of the static single-ended output peak-to-peak
swing with a driver impedance of RZQ/7Ω and an effective test load of 50Ω to VTT = VDDQ.
Parameter
Symbol
DDR4-1600/1866/2133
Unit
Note
AC differential output high
measurement level
VOHdiff(AC)
+0.3 x VDDQ
V
1
AC differential output low
measurement level
VOLdiff(AC)
-0.3 x VDDQ
V
1
Note:
1. The swing of ± 0.3 × VDDQ is based on approximately 50% of the static differential output peak-to-peak
swing with a driver impedance of RZQ/7Ω and an effective test load of 50Ω to VTT = VDDQ at each of the
differential outputs.
Differential AC and DC Input Levels
Single-ended AC & DC output levels
Differential AC & DC output levels
Parameter
Symbol
DDR4 2133 CL15
Unit
Operating One bank Active-Precharge current; tCK = tCK(IDD), tRC =
tRC(IDD), tRAS = tRASmin(IDD); CKE is HIGH, /CS is HIGH between valid
commands; Address bus inputs are SWITCHING; Data bus inputs are
SWITCHING
IDD0
1280
mA
Operating One bank Active-read-Precharge current; IOUT = 0mA; BL =
8, CL = CL(IDD), AL = 0; tCK = tCK(IDD), tRC = tRC (IDD), tRAS = tRASmin(IDD),
tRCD = tRCD(IDD); CKE is HIGH, /CS is HIGH between valid commands; Address
bus inputs are SWITCHING; Data pattern is same as IDD4W
IDD1
1450
mA
Precharge power-down current; All banks idle; tCK = tCK(IDD); CKE is
LOW; Other control and address bus inputs are STABLE; Data bus inputs are
FLOATING
IDD2P
500
mA
Precharge quiet standby current; All banks idle; tCK = tCK(IDD); CKE is
HIGH, /CS is HIGH; Other control and address bus inputs are STABLE; Data bus
inputs are FLOATING
IDD2Q
1020
mA
Precharge standby current; All banks idle; tCK = tCK(IDD); CKE is HIGH,
/CS is HIGH; Other control and address bus inputs are SWITCHING; Data bus
inputs are SWITCHING
IDD2N
1040
mA
Active power - down current; All banks open; tCK = tCK(IDD); CKE is LOW;
Other control and address bus inputs are STABLE; Data bus inputs are
FLOATING
IDD3P
570
mA
Active standby current; All banks open; tCK = tCK(IDD), tRAS =
tRASmax(IDD), tRP = tRP(IDD); CKE is HIGH, /CS is HIGH between valid
commands; Other control and address bus inputs are SWITCHING; Data bus
inputs are SWITCHING
IDD3N
1210
mA
Operating burst read current; All banks open, Continuous burst reads, IOUT
= 0mA; BL = 4, CL = CL(IDD), AL = 0; tCK = tCK(IDD), tRAS = tRASmax(IDD),
tRP = tRP(IDD); CKE is HIGH, /CS is HIGH between valid commands; Address
bus inputs are SWITCHING; Data pattern is same as IDD4W
IDD4R
2240
mA
Operating burst write current; All banks open, Continuous burst writes; BL =
8, CL = CL(IDD), AL = 0; tCK = tCK(IDD), tRAS = tRASmax(IDD), tRP = tRP(IDD);
CKE is HIGH, /CS is HIGH between valid commands; Address bus inputs are
SWITCHING; Data bus inputs are SWITCHING IDD4R
IDD4W
2050
mA
Burst refresh current; tCK = tCK(IDD); Refresh command at every tRFC(IDD)
interval; CKE is HIGH, /CS is HIGH between valid commands; Other control and
address bus inputs are SWITCHING; Data bus inputs are SWITCHING
IDD5
3480
mA
Self refresh current; CK and /CK at 0V; CKE ≒ 0.2V; Other control and
address bus inputs are FLOATING; Data bus inputs are FLOATING
IDD6
260
mA
Operating bank interleave read current; All bank interleaving reads, IOUT =
0mA; BL = 8, CL = CL(IDD), AL = tRCD(IDD)-1*tCK(IDD); tCK = tCK(IDD), Trc =
tRC(IDD), tRRD = tRRD(IDD), tRCD = 1*tCK(IDD); CKE is HIGH, CS is HIGH
between valid commands;Address bus inputs are STABLE during DESELECTs;
Data pattern is same as IDD4R;
IDD7
3240
mA
Note:
1.Module IDD was calculated on the specific brand DRAM(2Xnm) component IDD and can be differently
measured according to DQ loading capacitor.
IDD Specification parameters Definition( IDD values are for full operating range of Voltage and Temperature)
8GB, 1Gx72 Module(1 Rank x4)
Parameter
Symbol
DDR4 2133 CL15
Unit
Operating One bank Active-Precharge current; tCK = tCK(IDD), tRC =
tRC(IDD), tRAS = tRASmin(IDD); CKE is HIGH, /CS is HIGH between valid
commands; Address bus inputs are SWITCHING; Data bus inputs are
SWITCHING
IDD0
1600
mA
Operating One bank Active-read-Precharge current; IOUT = 0mA; BL =
8, CL = CL(IDD), AL = 0; tCK = tCK(IDD), tRC = tRC (IDD), tRAS = tRASmin(IDD),
tRCD = tRCD(IDD); CKE is HIGH, /CS is HIGH between valid commands; Address
bus inputs are SWITCHING; Data pattern is same as IDD4W
IDD1
1780
mA
Precharge power-down current; All banks idle; tCK = tCK(IDD); CKE is
LOW; Other control and address bus inputs are STABLE; Data bus inputs are
FLOATING
IDD2P
720
mA
Precharge quiet standby current; All banks idle; tCK = tCK(IDD); CKE is
HIGH, /CS is HIGH; Other control and address bus inputs are STABLE; Data bus
inputs are FLOATING
IDD2Q
1310
mA
Precharge standby current; All banks idle; tCK = tCK(IDD); CKE is HIGH,
/CS is HIGH; Other control and address bus inputs are SWITCHING; Data bus
inputs are SWITCHING
IDD2N
1370
mA
Active power - down current; All banks open; tCK = tCK(IDD); CKE is LOW;
Other control and address bus inputs are STABLE; Data bus inputs are
FLOATING
IDD3P
870
mA
Active standby current; All banks open; tCK = tCK(IDD), tRAS =
tRASmax(IDD), tRP = tRP(IDD); CKE is HIGH, /CS is HIGH between valid
commands; Other control and address bus inputs are SWITCHING; Data bus
inputs are SWITCHING
IDD3N
1540
mA
Operating burst read current; All banks open, Continuous burst reads, IOUT
= 0mA; BL = 4, CL = CL(IDD), AL = 0; tCK = tCK(IDD), tRAS = tRASmax(IDD),
tRP = tRP(IDD); CKE is HIGH, /CS is HIGH between valid commands; Address
bus inputs are SWITCHING; Data pattern is same as IDD4W
IDD4R
2580
mA
Operating burst write current; All banks open, Continuous burst writes; BL =
8, CL = CL(IDD), AL = 0; tCK = tCK(IDD), tRAS = tRASmax(IDD), tRP = tRP(IDD);
CKE is HIGH, /CS is HIGH between valid commands; Address bus inputs are
SWITCHING; Data bus inputs are SWITCHING IDD4R
IDD4W
2380
mA
Burst refresh current; tCK = tCK(IDD); Refresh command at every tRFC(IDD)
interval; CKE is HIGH, /CS is HIGH between valid commands; Other control and
address bus inputs are SWITCHING; Data bus inputs are SWITCHING
IDD5
3810
mA
Self refresh current; CK and /CK at 0V; CKE ≒ 0.2V; Other control and
address bus inputs are FLOATING; Data bus inputs are FLOATING
IDD6
500
mA
Operating bank interleave read current; All bank interleaving reads, IOUT =
0mA; BL = 8, CL = CL(IDD), AL = tRCD(IDD)-1*tCK(IDD); tCK = tCK(IDD), Trc =
tRC(IDD), tRRD = tRRD(IDD), tRCD = 1*tCK(IDD); CKE is HIGH, CS is HIGH
between valid commands;Address bus inputs are STABLE during DESELECTs;
Data pattern is same as IDD4R;
IDD7
3580
mA
Note:
1.Module IDD was calculated on the specific brand DRAM(2Xnm) component IDD and can be differently
measured according to DQ loading capacitor.
16GB, 2Gx72 Module(2 Rank x4)
Speed
DDR4 2133
Unit
Parameter
Symbol
Min
Max
Average Clock Period
tCK
0.938
<1.071
ns
CK high-level width
tCH
0.48
0.52
tCK
CK low-level width
tCL
0.48
0.52
tCK
DQS_t,DQS_c to DQ skew, per group, per
access
tDQSQ - TBD
tCK/2
DQS_t,DQS_c to DQ Skew determin-istic,
per group, per access
tDQSQ - TBD
tCK/2
DQ output hold time from DQS_t,DQS_c
tQH
TBD
-
tCK/2
DQ output hold time deterministic from
DQS_t, DQS_c
tQH
TBD
-
UI
DQS_t,DQS_c to DQ Skew total, per group,
per access; DBI enabled
tDQSQ - TBD
UI
DQ output hold time total from DQS_t,
DQS_c; DBI enabled
tQH
TBD
-
UI
DQ to DQ offset , per group, per ac-cess
referenced to DQS_t, DQS_c
tDQSQ
TBD
TBD
UI
DQS_t, DQS_c differential READ Pre-amble
(2 clock preamble)
tRPRE
0.9
TBD
tCK
DQS_t, DQS_c differential READ Postamble
tRPST
TBD
TBD
tCK
DQS_t, DQS_c differential WRITE Preamble
tWPRE
0.9
-
tCK
DQS_t, DQS_c differential WRITE Postamble
tWPST
TBD
TBD
tCK
DQS_t and DQS_c low-impedance time
(Referenced from RL-1)
tLZ(DQS)
-360
180
ps
DQS_t and DQS_c high-impedance time
(Referenced from RL+BL/2)
tHZ(DQS) - 180
ps
DQS_t, DQS_c differential input low pulse
width
tDQSL
0.46
0.54
tCK
DQS_t, DQS_c differential input high pulse
width
tDQSH
0.46
0.54
tCK
DQS_t, DQS_c rising edge to CK_t, CK_c
rising edge (1 clock preamble)
tDQSS
-0.27
0.27
tCK
DQS_t, DQS_c falling edge setup time to
CK_t, CK_c rising edge
tDSS
0.18
-
tCK
DQS_t, DQS_c falling edge hold time from
CK_t, CK_c rising edge
tDSH
0.18
-
tCK
Delay from start of internal write trans-action
to internal read command for different bank
group
tWTR_S
Max(2nCK, 2.5ns)
-
Delay from start of internal write trans-action
to internal read command for same bank
group
tWTR_L
Max(4nCK,7.5ns)
-
Timing Parameters & Specifications
WRITE recovery time
tWR
15
-
ns
Mode Register Set command cycle time
tMRD
8
-
nCK
Speed
DDR4 2133
Unit
Parameter
Symbol
Min
Max
CAS_n to CAS_n command delay for same
bank group
tCCD_L
6
-
nCK
CAS_n to CAS_n command delay for
different bank group
tCCD_S
4
-
nCK
Auto precharge write recovery + precharge
time
tDAL
tWR+tRP/tCK
nCK
ACTIVATE to ACTIVATE Command delay to
different bank group for 2KB page size
tRRD_S(2K)
Max(4nCK,5.3ns)
-
nCK
ACTIVATE to ACTIVATE Command delay to
different bank group for 1KB page size
tRRD_S(1K)
Max(4nCK,3.7ns)
-
nCK
ACTIVATE to ACTIVATE Command delay to
different bank group for 1/ 2KB page size
tRRD_S
(1/ 2K)
Max(4nCK,3.7ns)
-
nCK
ACTIVATE to ACTIVATE Command delay to
same bank group for 2KB page size
tRRD_L(2K)
Max(4nCK,6.4ns)
-
nCK
ACTIVATE to ACTIVATE Command delay to
same bank group for 1KB page size
tRRD_L(1K)
Max(4nCK,5.3ns)
-
nCK
ACTIVATE to ACTIVATE Command delay to
same bank group for 1/2KB page size
tRRD_L
(1/ 2K)
Max(4nCK,5.3ns)
-
nCK
Four activate window for 2KB page size
tFAW_2K
Max(28nCK, 30ns)
-
ns
Four activate window for 1KB page size
tFAW_1K
Max(20nCK, 21ns)
-
ns
Four activate window for 1/2KB page size
tFAW_1/2K
Max(16nCK, 15ns)
-
ns
Power-up and RESET calibration time
tZQinit
1024
-
nCK
Normal operation Full calibration time
tZQoper
512
-
nCK
Normal operation short calibration time
tZQCS
128
-
nCK
Exit Self Refresh to commands not re-quiring
a locked DLL
tXS
tRFC(min)+ 10ns
-
Exit Self Refresh to commands requir-ing a
locked DLL
tXSDLL
tDLLK(min)
-
Internal READ Command to PRE-CHARGE
Command delay
tRTP
Max(4nCK,7.5ns)
-
Minimum CKE low width for Self re-fresh
entry to exit timing
tCKESR
tCKE(min)+1nCK
-
Exit Power Down with DLL on to any valid
command;Exit Precharge Power Down with
DLL frozen to commands not requiring a
locked DLL
tXP
Max (4nCK,6ns)
-
CKE minimum pulse width
tCKE
Max (3nCK,5ns)
-
Asynchronous RTT turn-on delay
(Power-Down with DLL frozen)
tAONAS
1.0
9.0
ns
Asynchronous RTT turn-off delay
(Power-Down with DLL frozen)
tAOFAS
1.0
9.0
ns
RTT dynamic change skew
tADC
0.3
0.7
tCK
TS1GHR72V1Z Serial Presence Detect
Byte No.
Function Described
Standard Specification
Vendor Part
0
Number of Bytes Used / Number of Bytes in SPD
Device / CRC Coverage
CRC:0-255Byte
SPD Byte use: 512Byte
SPD Byte total: 512Byte
24
1
SPD Revision - -
2
Key Byte / DRAM Device Type
DDR4 SDRAM
0C
3
Key Byte / Module Type
RDIMM
01
4
SDRAM Density and Banks
4Gb, 16banks
84
5
SDRAM Addressing
ROW:16, Column:10
21
6
SDRAM Package Type
-
-
7
SDRAM Optional Features
-
-
8
SDRAM Thermal and Refresh Options
-
-
9
Other SDRAM Optional Features
-
-
10
Reserved - 00
11
Module Nominal Voltage, VDD
1.2V
03
12
Module Organization
1Rank, 4bits
00
13
Module Memory Bus Width
ECC, 72bits
0B
14
Module Thermal Sensor
Support
80
15-16
Reserved - 00
17
Timebases - 00
18
SDRAM Minimum Cycle Time (tCKAVGmin)
0.938ns
08
19
SDRAM Maximum Cycle Time (tCKAVGmax)
1.5ns
0C
20-23
CAS Latencies Supported
10, 11, 12, 13, 14, 15, 16
-
24
Minimum CAS Latency Time (tAAmin)
13.75ns
6E
25
Minimum RAS to CAS Delay Time (tRCDmin)
13.75ns
6E
26
Minimum Row Precharge Delay Time (tRPmin)
13.75ns
6E
27
Upper Nibbles for tRASmin and tRCmin
-
11
28
Minimum Active to Precharge Delay Time (tRASmin),
Least Significant Byte
33ns
08
29
Minimum Active to Active/Refresh Delay Time
(tRCmin), Least Significant Byte
46.75ns
76
30-31
Minimum Refresh Recovery Delay Time (tRFC1min)
260ns
20,08
32-33
Minimum Refresh Recovery Delay Time (tRFC2min)
160ns
00,05
34-35
Minimum Refresh Recovery Delay Time (tRFC4min)
110ns
70,03
36-37
Minimum Four Activate Window Delay Time
(tFAWmin)
15ns
00,78
38
Minimum Activate to Activate Delay Time
(tRRD_Smin), different bank group
3.7ns
1E
39
Minimum Activate to Activate Delay Time
(tRRD_Lmin), same bank group
5.3ns
2B
40
Minimum CAS to CAS Delay Time (tCCD_Lmin),
5.625ns
2E
SERIAL PRESENCE DETECT SPECIFICATION
same bank group
41-59
Reserved - 00
60-77
Connector to SDRAM Bit Mapping
-
-
78-116
Reserved - 00
117
Fine Offset for Minimum CAS to CAS Delay Time
(tCCD_Lmin), same bank group
-
83
118
Fine Offset for Minimum Activate to Activate Delay
Time (tRRD_Lmin), same bank group
-
B5
119
Fine Offset for Minimum Activate to Activate Delay
Time (tRRD_Smin), different bank group
-
CE
120
Fine Offset for Minimum Active to Active/Refresh
Delay Time (tRCmin)
-
00
121
Fine Offset for Minimum Row Precharge Delay Time
(tRPmin)
-
00
122
Fine Offset for Minimum RAS to CAS Delay Time
(tRCDmin)
-
00
123
Fine Offset for Minimum CAS Latency Time (tAAmin)
-
00
124
Fine Offset for SDRAM Maximum Cycle Time
(tCKAVGmax)
-
00
125
Fine Offset for SDRAM Minimum Cycle Time
(tCKAVGmin)
-
C2
126-127
Cyclical Redundancy Code
-
-
128
Raw Card Extension, Module Nominal Height
31.25mm
11
129
Module Maximum Thickness
Planar Double Sides
11
130
Reference Raw Card Used
Revision 0, Raw card C
02
131
DIMM Module Attributes
1 Row,1 Register
05
132
RDIMM Thermal Heat Spreader Solution
Not incorporated
00
133-134
Register Manufacturer ID Code
By Manufacturer
Variable
135
Register Revision Number
By Manufacturer
Variable
136
Address Mapping from Register to DRAM
Not Mirrored
00
137
Register Output Drive Strength for Control
Moderate Drive:
Chip select, ODT, CKE
Moderate Drive:
Command/Address
55
138
Register Output Drive Strength for CK
Moderate Drive
05
139-253
Reserved - 00
254-255
Cyclical Redundancy Code (CRC)
-
-
256-319
Reserved - 00
320-321
Module Manufacturer ID Code
-
-
322
Module Manufacturing Location
-
-
323-324
Module Manufacturing Date
-
-
325-328
Module Serial Number
-
-
329-348
Module Part Number
-
-
349
Module Revision Code
-
00
350-351
DRAM Manufacturer ID Code
By Manufacturer
Variable
352
DRAM Stepping
-
00
353-381
Manufacturer Specific Data
By Manufacturer
Variable
382-383
Reserved - 00
384-551
End User Programmable
-
-
TS2GHR72V1Z Serial Presence Detect
Byte No.
Function Described
Standard Specification
Vendor Part
0
Number of Bytes Used / Number of Bytes in SPD
Device / CRC Coverage
CRC:0-255Byte
SPD Byte use: 512Byte
SPD Byte total: 512Byte
24
1
SPD Revision - -
2
Key Byte / DRAM Device Type
DDR4 SDRAM
0C
3
Key Byte / Module Type
RDIMM
01
4
SDRAM Density and Banks
4Gb, 16banks
84
5
SDRAM Addressing
ROW:16, Column:10
21
6
SDRAM Package Type
-
-
7
SDRAM Optional Features
-
-
8
SDRAM Thermal and Refresh Options
-
-
9
Other SDRAM Optional Features
-
-
10
Reserved - 00
11
Module Nominal Voltage, VDD
1.2V
03
12
Module Organization
2Rank, 4bits
08
13
Module Memory Bus Width
ECC, 72bits
0B
14
Module Thermal Sensor
Support
80
15-16
Reserved - 00
17
Timebases - 00
18
SDRAM Minimum Cycle Time (tCKAVGmin)
0.938ns
08
19
SDRAM Maximum Cycle Time (tCKAVGmax)
1.5ns
0C
20-23
CAS Latencies Supported
10, 11, 12, 13, 14, 15, 16
-
24
Minimum CAS Latency Time (tAAmin)
13.75ns
6E
25
Minimum RAS to CAS Delay Time (tRCDmin)
13.75ns
6E
26
Minimum Row Precharge Delay Time (tRPmin)
13.75ns
6E
27
Upper Nibbles for tRASmin and tRCmin
-
11
28
Minimum Active to Precharge Delay Time (tRASmin),
Least Significant Byte
33ns
08
29
Minimum Active to Active/Refresh Delay Time
(tRCmin), Least Significant Byte
46.75ns
76
30-31
Minimum Refresh Recovery Delay Time (tRFC1min)
260ns
20,08
32-33
Minimum Refresh Recovery Delay Time (tRFC2min)
160ns
00,05
34-35
Minimum Refresh Recovery Delay Time (tRFC4min)
110ns
70,03
36-37
Minimum Four Activate Window Delay Time
(tFAWmin)
15ns
00,78
38
Minimum Activate to Activate Delay Time
(tRRD_Smin), different bank group
3.7ns
1E
39
Minimum Activate to Activate Delay Time
(tRRD_Lmin), same bank group
5.3ns
2B
40
Minimum CAS to CAS Delay Time (tCCD_Lmin),
same bank group
5.625ns
2E
41-59
Reserved - 00
60-77
Connector to SDRAM Bit Mapping
-
-
78-116
Reserved - 00
117
Fine Offset for Minimum CAS to CAS Delay Time
(tCCD_Lmin), same bank group
-
83
118
Fine Offset for Minimum Activate to Activate Delay
Time (tRRD_Lmin), same bank group
-
B5
119
Fine Offset for Minimum Activate to Activate Delay
Time (tRRD_Smin), different bank group
-
CE
120
Fine Offset for Minimum Active to Active/Refresh
Delay Time (tRCmin)
-
00
121
Fine Offset for Minimum Row Precharge Delay Time
(tRPmin)
-
00
122
Fine Offset for Minimum RAS to CAS Delay Time
(tRCDmin)
-
00
123
Fine Offset for Minimum CAS Latency Time (tAAmin)
-
00
124
Fine Offset for SDRAM Maximum Cycle Time
(tCKAVGmax)
-
00
125
Fine Offset for SDRAM Minimum Cycle Time
(tCKAVGmin)
-
C2
126-127
Cyclical Redundancy Code
-
-
128
Raw Card Extension, Module Nominal Height
31.25mm
11
129
Module Maximum Thickness
Planar Double Sides
11
130
Reference Raw Card Used
Revision 0, Raw card A
00
131
DIMM Module Attributes
2 Row,1 Register
09
132
RDIMM Thermal Heat Spreader Solution
Not incorporated
00
133-134
Register Manufacturer ID Code
By Manufacturer
Variable
135
Register Revision Number
By Manufacturer
Variable
136
Address Mapping from Register to DRAM
Mirrored
01
137
Register Output Drive Strength for Control
Moderate Drive:
Chip select, ODT, CKE
Strong Drive:
Command/Address
65
138
Register Output Drive Strength for CK
Moderate Drive
05
139-253
Reserved - 00
254-255
Cyclical Redundancy Code (CRC)
-
-
256-319
Reserved - 00
320-321
Module Manufacturer ID Code
-
-
322
Module Manufacturing Location
-
-
323-324
Module Manufacturing Date
-
-
325-328
Module Serial Number
-
-
329-348
Module Part Number
-
-
349
Module Revision Code
-
00
350-351
DRAM Manufacturer ID Code
By Manufacturer
Variable
352
DRAM Stepping
-
00
353-381
Manufacturer Specific Data
By Manufacturer
Variable
382-383
Reserved - 00
384-551
End User Programmable
-
-
Symbol
Function
A0~A17
Register address input
BA0, BA1
Register bank select input
BG0, BG1
Register bank group select input
RAS_n
Register row address strobe input
CAS_n
Register column address strobe
input
WE_n
Register write enable input
CS0_n, CS1_n,
CS2_n, CS3_n
DIMM Rank Select Lines input
CKE0, CKE1
Register clock enable lines input
ODT0, ODT1
Register on-die termination control
lines input
ACT_n
Register input for activate input
DQ0~Q63
DIMM memory data bus
CB0~B7
DIMM ECC check bits
DQS0_t~DQS17_t
Data Buffer data strobes
(positive line of differential pair)
DQS0_c~DQS17_c
Data Buffer data strobes
(negative line of differential pair)
CK0_t, CK1_t
Register clock input (positive line of
differential pair)
CK0_c, CK1_c
Register clocks input (negative line
of differential pair)
SCL
I2C serial bus clock for SPD/TS
and register
SDA
I2C serial bus data line for SPD/TS
and register
SA0~SA2
I2C slave address select for
SPD/TS and register
PAR
Register parity input
VDD
SDRAM core power supply
VREFCA
SDRAM command/address
reference supply
VSS
Power supply return (ground)
VDDSPD
Serial SPD/TS positive power
supply
ALERT_n
Register ALERT_n output
VPP
SDRAM activating power supply
RESET_n
Set Register and SDRAMs to a
Known State
DDR4
TS2GHR72V1PL
288Pin DDR4 2133 VLP RDIMM
16GB Based on 2Gx4 DDP
Description
DDR4 VLP Registered DIMM is high-speed, low power
memory module that use 2Gx4bits DDR4 SDRAM in
FBGA package and a 4Kbits serial EEPROM on a
288-pin printed circuit board. DDR4 VLP Registered
DIMM is a Dual In-Line Memory Module and is intended
for mounting into 288-pin edge connector sockets.
Synchronous design allows precise cycle control with the
use of system clock. Data I/O transactions are possible
on both edges of DQS. Range of operation frequencies,
programmable latencies allow the same device to be
Serial presence detect with EEPROM
On DIMM Thermal
Asynchronous reset
Pin Identification
useful for a variety of high bandwidth, high performance
memory system applications.
Features
RoHS compliant products.
JEDEC standard 1.2V ± 0.06V power supply
VDDQ=1.2V ± 0.06V
Clock Freq: 1067MHZ for 2133Mb/s/Pin.
Programmable CAS Latency: 10,11,12,13,14,15,16
Programmable Additive Latency (Posted /CAS):
0,CL-2 or CL-1 clock
Programmable /CAS Write Latency (CWL)
= 11, 14(DDR4-2133)
8 bit pre-fetch
Burst Length: 4, 8
Bi-directional Differential Data-Strobe
On Die Termination with ODT pin
EVENT_n
SPD signals a thermal event has
occurred.
VTT
SDRAM I/O termination supply
RFU
Reserved for future use
NC
No Connection
Dimensions (Unit: millimeter)
Note:
1. Tolerances on all dimensions +/-0.15mm unless otherwise specified.
Pin
No
Pin
Name
Pin
No
Pin
Name
Pin
No
Pin
Name
Pin
No
Pin
Name
Pin
No
Pin
Name
Pin
No
Pin
Name
Pin
No
Pin
Name
Pin
No
Pin
Name
1
12V3,NC
37
VSS
73
VDD
109
VSS
145
12V3,NC
181
DQ29
217
VDD
253
DQ41
2
VSS
38
DQ24
74
CK0_t
110
TDQS14_t,
DQS14_t
146
VREFCA
182
VSS
218
CK1_t
254
VSS
3
DQ4
39
VSS
75
CK0_c
111
TDQS14_c,
DQS14_c
147
VSS
183
DQ25
219
CK1_c
255
DQS5_c
4
VSS
40
TDQS12_t,
DQS12_t
76
VDD
112
VSS
148
DQ5
184
VSS
220
VDD
256
DQS5_t
5
DQ0
41
TDQS12_c,
DQS12_c
77
VTT
113
DQ46
149
VSS
185
DQS3_c
221
VTT
257
VSS
6
VSS
42
VSS
78
EVENT_n
114
VSS
150
DQ1
186
DQS3_t
222
PARITY
258
DQ47
7
TDQS9_t,
DQS9_t
43
DQ30
79
A0
115
DQ42
151
VSS
187
VSS
223
VDD
259
VSS
8
TDQS9_c,
DQS9_c
44
VSS
80
VDD
116
VSS
152
DQS0_c
188
DQ31
224
BA1
260
DQ43
9
VSS
45
DQ26
81
BA0
117
DQ52
153
DQS0_t
189
VSS
225
A10/AP
261
VSS
10
DQ6
46
VSS
82
RAS_n/A16
118
VSS
154
VSS
190
DQ27
226
VDD
262
DQ53
11
VSS
47
CB4
83
VDD
119
DQ48
155
DQ7
191
VSS
227
RFU
263
VSS
12
DQ2
48
VSS
84
S0_n
120
VSS
156
VSS
192
CB5
228
WE_n/A14
264
DQ49
13
VSS
49
CB0
85
VDD
121
TDQS15_t,
DQS15_t
157
DQ3
193
VSS
229
VDD
265
VSS
14
DQ12
50
VSS
86
CAS_n/A15
122
TDQS15_c,
DQS15_c
158
VSS
194
CB1
230
NC
266
DQS6_c
15
VSS
51
TDQS17_t,
DQS17_t
87
ODT0
123
VSS
159
DQ13
195
VSS
231
VDD
267
DQS6_t
16
DQ8
52
TDQS17_c,
DQS17_c
88
VDD
124
DQ54
160
VSS
196
DQS8_c
232
A13
268
VSS
17
VSS
53
VSS
89
S1_n
125
VSS
161
DQ9
197
DQS8_t
233
VDD
269
DQ55
18
TDQS10_t,
DQS10_t
54
CB6
90
VDD
126
DQ50
162
VSS
198
VSS
234
A17
270
VSS
19
TDQS10_c,
DQS10_c
55
VSS
91
ODT1
127
VSS
163
DQS1_c
199
CB7
235
NC,C2
271
DQ51
20
VSS
56
CB2
92
VDD
128
DQ60
164
DQS1_t
200
VSS
236
VDD
272
VSS
21
DQ14
57
VSS
93
C0,CS2_n,NC
129
VSS
165
VSS
201
CB3
237
NC,CS3_c,C1
273
DQ61
22
VSS
58
RESET_n
94
VSS
130
DQ56
166
DQ15
202
VSS
238
SA2
274
VSS
23
DQ10
59
VDD
95
DQ36
131
VSS
167
VSS
203
CKE1
239
VSS
275
DQ57
24
VSS
60
CKE0
96
VSS
132
TDQS16_t,
DQS16_t
168
DQ11
204
VDD
240
DQ37
276
VSS
25
DQ20
61
VDD
97
DQ32
133
TDQS16_c,
DQS16_c
169
VSS
205
RFU
241
VSS
277
DQS7_c
26
VSS
62
ACT_n
98
VSS
134
VSS
170
DQ21
206
VDD
242
DQ33
278
DQS7_t
27
DQ16
63
BG0
99
TDQS13_t,
DQS13_t
135
DQ62
171
VSS
207
BG1
243
VSS
279
VSS
28
VSS
64
VDD
100
TDQS13_c,
DQS13_c
136
VSS
172
DQ17
208
ALERT_n
244
DQS4_c
280
DQ63
29
TDQS11_t,
DQS11_t
65
A12/BC_n
101
VSS
137
DQ58
173
VSS
209
VDD
245
DQS4_t
281
VSS
30
TDQS11_c,
DQS11_c
66
A9
102
DQ38
138
VSS
174
DQS2_c
210
A11
246
VSS
282
DQ59
31
VSS
67
VDD
103
VSS
139
SA0
175
DQS2_t
211
A7
247
DQ39
283
VSS
32
DQ22
68
A8
104
DQ34
140
SA1
176
VSS
212
VDD
248
VSS
284
VDDSPD
33
VSS
69
A6
105
VSS
141
SCL
177
DQ23
213
A5
249
DQ35
285
SDA
34
DQ18
70
VDD
106
DQ44
142
VPP
178
VSS
214
A4
250
VSS
286
VPP
35
VSS
71
A3
107
VSS
143
VPP
179
DQ19
215
VDD
251
DQ45
287
VPP
36
DQ28
72
A1
108
DQ40
144
RFU
180
VSS
216
A2
252
VSS
288
VPP4
Note:
1. VPP is 2.5V DC
2. Pin 230 is defined as NC for UDIMMs, RDIMMs and LRDIMMs. Pin 230 is defined as SAVE_n for NVDIMMs.
3. Pins 1 and 145 are defined as NC for UDIMMs, RDIMMs and LRDIMMs. Pins 1 and 145 are defined as 12V for Hybrid /NVDIMM
4. The 5th VPP is required on all modules, DIMMs.
Pin Assignments
Block Diagram
16GB, 2Gx72 Module(2 Rank x4)
This technical information is based on industry standard data and tests believed to be reliable. However, Transcend makes no warranties, either
expressed or implied, as to its accuracy and assume no liability in connection with the use of this product. Transcend reserves the right to make changes
in specifications at any time without prior notice.
Parameter
Symbol
Rating
Unit
Note
Operating Temperature
TOPER
0 to 85
℃
1,2
Note:
3. Operating Temperature is the case surface temperature on the center/top side of the DRAM. For the
measurement conditions, please refer to JESD51-2 standard.
4. At 0 - 85℃, operation temperature range are the temperature which all DRAM specification will be
supported.
Parameter
Symbol
Value
Unit
Note
Voltage on VDD relative to Vss
VDD
-0.3 ~ 1.5
V
1
Voltage on VDDQ pin relative to Vss
VDDQ
-0.3 ~ 1.5
V
1
Voltage on VPP pin relative to Vss
VPP
-0.3 ~ 3.0
V
3
Voltage on any pin relative to Vss
VIN, VOUT
-0.3 ~ 1.5
V
1
Storage temperature
TSTG
-55~+100
℃
1,2
Note:
4. Stress greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
5. Storage Temperature is the case surface temperature on the center/top side of the DRAM. For the
measurement conditions, please refer to JESD51-2 standard.
6. VPP must be equal or greater than VDD/VDDQ at all times.
Parameter
Symbol
Rating
Unit
Notes
Min
Typ.
Max
Supply voltage
VDD
1.14
1.2
1.26
V
1, 2
Supply voltage for Output
VDDQ
1.14
1.2
1.26
V
1, 2
Wordline supply voltage
VPP
2.375
2.5
2.75
V
3
Note:
4. Under all conditions VDDQ must be less than or equal to VDD.
5. VDDQ tracks with VDD, AC parameters are measured with VDD and VDDQ tied together.
6. DC bandwidth is limited to 20MHz
Parameter
Symbol
DDR4-1600/1866/2133
Unit
Note
Min
Max
I/O Reference Voltage (CMD/ADD)
VREFCA(DC)
0.49*VDDQ
0.51*VDDQ
V
1,2
DC Input Logic High
VIH(DC)
VREF+0.075
VDD
V
DC Input Logic Low
VIL(DC)
VSS
VREF-0.075
V
AC Input Logic High
VIH(AC)
VREF+0.1
Note 1
V
AC Input Logic Low
VIL(AC)
Note 1
VREF-0.1
V
Note:
3. The AC peak noise on VREFCA may not allow VREFCA to deviate from VREFCA(DC) by more than ± 1%
VDD (for reference : approx. ± 12mV)
4. For reference : approx. VDD/2 ± 12mV
Operating Temperature Condition
Absolute Maximum DC Ratings
AC & DC Operating Conditions
Recommended DC operating conditions
Single-ended AC & DC input levels for Command and Address
Parameter
Symbol
DDR4-1600/1866/2133
Unit
Note
Min
Max
differential input high DC
VIHdiff(DC)
+0.150
NOTE 3
V 1 differential input low DC
VILdiff(DC)
NOTE 3
-0.150
V
1
differential input high AC
VIHdiff(AC)
2 x (VIH(AC) - VREF)
NOTE 3
V 2 differential input low AC
VILdiff(AC)
NOTE 3
2 x (VIL(AC) -VREF)
V
2
Note:
4. Used to define a differential signal slew-rate.
5. for CK_t - CK_c use VIH.CA/VIL.CA(AC) of ADD/CMD and VREFCA;
6. These values are not defined; however, the differential signals CK_t - CK_c, need to be within the respective
limits (VIH.CA(DC) max, VIL.CA(DC)min) for single-ended signals as well as the limitations for overshoot
and undershoot.
Parameter
Symbol
DDR4-1600/1866/2133
Unit
Note
DC output high measurement level
VOH(DC)
1.1 x VDDQ
V
DC output mid measurement level
VOM(DC)
0.8 x VDDQ
V DC output low measurement level
VOL(DC)
0.5 x VDDQ
V AC output high measurement level
VOH(AC)
(0.7 + 0.15) x VDDQ
V 1 AC output low measurement level
VOL(AC)
(0.7 - 0.15) x VDDQ
V
1
Note:
2. The swing of ± 0.15 × VDDQ is based on approximately 50% of the static single-ended output peak-to-peak
swing with a driver impedance of RZQ/7Ω and an effective test load of 50Ω to VTT = VDDQ.
Parameter
Symbol
DDR4-1600/1866/2133
Unit
Note
AC differential output high
measurement level
VOHdiff(AC)
+0.3 x VDDQ
V
1
AC differential output low
measurement level
VOLdiff(AC)
-0.3 x VDDQ
V
1
Note:
2. The swing of ± 0.3 × VDDQ is based on approximately 50% of the static differential output peak-to-peak
swing with a driver impedance of RZQ/7Ω and an effective test load of 50Ω to VTT = VDDQ at each of the
differential outputs.
Differential AC and DC Input Levels
Single-ended AC & DC output levels
Differential AC & DC output levels
Parameter
Symbol
DDR4 2133 CL15
Unit
Operating One bank Active-Precharge current; tCK = tCK(IDD), tRC =
tRC(IDD), tRAS = tRASmin(IDD); CKE is HIGH, /CS is HIGH between valid
commands; Address bus inputs are SWITCHING; Data bus inputs are
SWITCHING
IDD0
1600
mA
Operating One bank Active-read-Precharge current; IOUT = 0mA; BL =
8, CL = CL(IDD), AL = 0; tCK = tCK(IDD), tRC = tRC (IDD), tRAS = tRASmin(IDD),
tRCD = tRCD(IDD); CKE is HIGH, /CS is HIGH between valid commands; Address
bus inputs are SWITCHING; Data pattern is same as IDD4W
IDD1
1780
mA
Precharge power-down current; All banks idle; tCK = tCK(IDD); CKE is
LOW; Other control and address bus inputs are STABLE; Data bus inputs are
FLOATING
IDD2P
720
mA
Precharge quiet standby current; All banks idle; tCK = tCK(IDD); CKE is
HIGH, /CS is HIGH; Other control and address bus inputs are STABLE; Data bus
inputs are FLOATING
IDD2Q
1310
mA
Precharge standby current; All banks idle; tCK = tCK(IDD); CKE is HIGH,
/CS is HIGH; Other control and address bus inputs are SWITCHING; Data bus
inputs are SWITCHING
IDD2N
1370
mA
Active power - down current; All banks open; tCK = tCK(IDD); CKE is LOW;
Other control and address bus inputs are STABLE; Data bus inputs are
FLOATING
IDD3P
870
mA
Active standby current; All banks open; tCK = tCK(IDD), tRAS =
tRASmax(IDD), tRP = tRP(IDD); CKE is HIGH, /CS is HIGH between valid
commands; Other control and address bus inputs are SWITCHING; Data bus
inputs are SWITCHING
IDD3N
1540
mA
Operating burst read current; All banks open, Continuous burst reads, IOUT
= 0mA; BL = 4, CL = CL(IDD), AL = 0; tCK = tCK(IDD), tRAS = tRASmax(IDD),
tRP = tRP(IDD); CKE is HIGH, /CS is HIGH between valid commands; Address
bus inputs are SWITCHING; Data pattern is same as IDD4W
IDD4R
2580
mA
Operating burst write current; All banks open, Continuous burst writes; BL =
8, CL = CL(IDD), AL = 0; tCK = tCK(IDD), tRAS = tRASmax(IDD), tRP = tRP(IDD);
CKE is HIGH, /CS is HIGH between valid commands; Address bus inputs are
SWITCHING; Data bus inputs are SWITCHING IDD4R
IDD4W
2380
mA
Burst refresh current; tCK = tCK(IDD); Refresh command at every tRFC(IDD)
interval; CKE is HIGH, /CS is HIGH between valid commands; Other control and
address bus inputs are SWITCHING; Data bus inputs are SWITCHING
IDD5
3810
mA
Self refresh current; CK and /CK at 0V; CKE ≒ 0.2V; Other control and
address bus inputs are FLOATING; Data bus inputs are FLOATING
IDD6
500
mA
Operating bank interleave read current; All bank interleaving reads, IOUT =
0mA; BL = 8, CL = CL(IDD), AL = tRCD(IDD)-1*tCK(IDD); tCK = tCK(IDD), Trc =
tRC(IDD), tRRD = tRRD(IDD), tRCD = 1*tCK(IDD); CKE is HIGH, CS is HIGH
between valid commands;Address bus inputs are STABLE during DESELECTs;
Data pattern is same as IDD4R;
IDD7
3580
mA
Note:
1.Module IDD was calculated on the specific brand DRAM(2Xnm) component IDD and can be differently
measured according to DQ loading capacitor.
IDD Specification parameters Definition( IDD values are for full operating range of Voltage and Temperature)
16GB, 2Gx72 Module(2 Rank x4)
Speed
DDR4 2133
Unit
Parameter
Symbol
Min
Max
Average Clock Period
tCK
0.938
<1.071
ns
CK high-level width
tCH
0.48
0.52
tCK
CK low-level width
tCL
0.48
0.52
tCK
DQS_t,DQS_c to DQ skew, per group, per
access
tDQSQ - TBD
tCK/2
DQS_t,DQS_c to DQ Skew determin-istic,
per group, per access
tDQSQ - TBD
tCK/2
DQ output hold time from DQS_t,DQS_c
tQH
TBD
-
tCK/2
DQ output hold time deterministic from
DQS_t, DQS_c
tQH
TBD
-
UI
DQS_t,DQS_c to DQ Skew total, per group,
per access; DBI enabled
tDQSQ - TBD
UI
DQ output hold time total from DQS_t,
DQS_c; DBI enabled
tQH
TBD
-
UI
DQ to DQ offset , per group, per ac-cess
referenced to DQS_t, DQS_c
tDQSQ
TBD
TBD
UI
DQS_t, DQS_c differential READ Pre-amble
(2 clock preamble)
tRPRE
0.9
TBD
tCK
DQS_t, DQS_c differential READ Postamble
tRPST
TBD
TBD
tCK
DQS_t, DQS_c differential WRITE Preamble
tWPRE
0.9
-
tCK
DQS_t, DQS_c differential WRITE Postamble
tWPST
TBD
TBD
tCK
DQS_t and DQS_c low-impedance time
(Referenced from RL-1)
tLZ(DQS)
-360
180
ps
DQS_t and DQS_c high-impedance time
(Referenced from RL+BL/2)
tHZ(DQS) - 180
ps
DQS_t, DQS_c differential input low pulse
width
tDQSL
0.46
0.54
tCK
DQS_t, DQS_c differential input high pulse
width
tDQSH
0.46
0.54
tCK
DQS_t, DQS_c rising edge to CK_t, CK_c
rising edge (1 clock preamble)
tDQSS
-0.27
0.27
tCK
DQS_t, DQS_c falling edge setup time to
CK_t, CK_c rising edge
tDSS
0.18
-
tCK
DQS_t, DQS_c falling edge hold time from
CK_t, CK_c rising edge
tDSH
0.18
-
tCK
Delay from start of internal write trans-action
to internal read command for different bank
group
tWTR_S
Max(2nCK, 2.5ns)
-
Delay from start of internal write trans-action
to internal read command for same bank
group
tWTR_L
Max(4nCK,7.5ns)
-
WRITE recovery time
tWR
15
-
ns
Mode Register Set command cycle time
tMRD
8
-
nCK
Timing Parameters & Specifications
Speed
DDR4 2133
Unit
Parameter
Symbol
Min
Max
CAS_n to CAS_n command delay for same
bank group
tCCD_L
6
-
nCK
CAS_n to CAS_n command delay for
different bank group
tCCD_S
4
-
nCK
Auto precharge write recovery + precharge
time
tDAL
tWR+tRP/tCK
nCK
ACTIVATE to ACTIVATE Command delay to
different bank group for 2KB page size
tRRD_S(2K)
Max(4nCK,5.3ns)
-
nCK
ACTIVATE to ACTIVATE Command delay to
different bank group for 1KB page size
tRRD_S(1K)
Max(4nCK,3.7ns)
-
nCK
ACTIVATE to ACTIVATE Command delay to
different bank group for 1/ 2KB page size
tRRD_S
(1/ 2K)
Max(4nCK,3.7ns)
-
nCK
ACTIVATE to ACTIVATE Command delay to
same bank group for 2KB page size
tRRD_L(2K)
Max(4nCK,6.4ns)
-
nCK
ACTIVATE to ACTIVATE Command delay to
same bank group for 1KB page size
tRRD_L(1K)
Max(4nCK,5.3ns)
-
nCK
ACTIVATE to ACTIVATE Command delay to
same bank group for 1/2KB page size
tRRD_L
(1/ 2K)
Max(4nCK,5.3ns)
-
nCK
Four activate window for 2KB page size
tFAW_2K
Max(28nCK, 30ns)
-
ns
Four activate window for 1KB page size
tFAW_1K
Max(20nCK, 21ns)
-
ns
Four activate window for 1/2KB page size
tFAW_1/2K
Max(16nCK, 15ns)
-
ns
Power-up and RESET calibration time
tZQinit
1024
-
nCK
Normal operation Full calibration time
tZQoper
512
-
nCK
Normal operation short calibration time
tZQCS
128
-
nCK
Exit Self Refresh to commands not re-quiring
a locked DLL
tXS
tRFC(min)+ 10ns
-
Exit Self Refresh to commands requir-ing a
locked DLL
tXSDLL
tDLLK(min)
-
Internal READ Command to PRE-CHARGE
Command delay
tRTP
Max(4nCK,7.5ns)
-
Minimum CKE low width for Self re-fresh
entry to exit timing
tCKESR
tCKE(min)+1nCK
-
Exit Power Down with DLL on to any valid
command;Exit Precharge Power Down with
DLL frozen to commands not requiring a
locked DLL
tXP
Max (4nCK,6ns)
-
CKE minimum pulse width
tCKE
Max (3nCK,5ns)
-
Asynchronous RTT turn-on delay
(Power-Down with DLL frozen)
tAONAS
1.0
9.0
ns
Asynchronous RTT turn-off delay
(Power-Down with DLL frozen)
tAOFAS
1.0
9.0
ns
RTT dynamic change skew
tADC
0.3
0.7
tCK
TS2GHR72V1PL Serial Presence Detect
Byte No.
Function Described
Standard Specification
Vendor Part
0
Number of Bytes Used / Number of Bytes in SPD
Device / CRC Coverage
CRC:0-255Byte
SPD Byte use: 384Byte
SPD Byte total: 512Byte
23
1
SPD Revision - -
2
Key Byte / DRAM Device Type
DDR4 SDRAM
0C
3
Key Byte / Module Type
RDIMM
01
4
SDRAM Density and Banks
4Gb, 16banks
84
5
SDRAM Addressing
ROW:16, Column:10
21
6
SDRAM Package Type
DDP
91
7
SDRAM Optional Features
-
-
8
SDRAM Thermal and Refresh Options
-
-
9
Other SDRAM Optional Features
-
-
10
Reserved - 00
11
Module Nominal Voltage, VDD
1.2V
03
12
Module Organization
2Rank, 4bits
08
13
Module Memory Bus Width
ECC, 72bits
0B
14
Module Thermal Sensor
Support
80
15-16
Reserved - 00
17
Timebases - 00
18
SDRAM Minimum Cycle Time (tCKAVGmin)
0.938ns
08
19
SDRAM Maximum Cycle Time (tCKAVGmax)
1.5ns
0C
20-23
CAS Latencies Supported
10, 11, 12, 13, 14, 15, 16
-
24
Minimum CAS Latency Time (tAAmin)
13.75ns
6E
25
Minimum RAS to CAS Delay Time (tRCDmin)
13.75ns
6E
26
Minimum Row Precharge Delay Time (tRPmin)
13.75ns
6E
27
Upper Nibbles for tRASmin and tRCmin
-
11
28
Minimum Active to Precharge Delay Time (tRASmin),
Least Significant Byte
33ns
08
29
Minimum Active to Active/Refresh Delay Time
(tRCmin), Least Significant Byte
46.75ns
76
30-31
Minimum Refresh Recovery Delay Time (tRFC1min)
260ns
20,08
32-33
Minimum Refresh Recovery Delay Time (tRFC2min)
160ns
00,05
34-35
Minimum Refresh Recovery Delay Time (tRFC4min)
110ns
70,03
36-37
Minimum Four Activate Window Delay Time
(tFAWmin)
15ns
00,78
38
Minimum Activate to Activate Delay Time
(tRRD_Smin), different bank group
3.7ns
1E
39
Minimum Activate to Activate Delay Time
(tRRD_Lmin), same bank group
5.3ns
2B
40
Minimum CAS to CAS Delay Time (tCCD_Lmin),
same bank group
5.625ns
2E
41-59
Reserved - 00
60-77
Connector to SDRAM Bit Mapping
-
-
SERIAL PRESENCE DETECT SPECIFICATION
78-116
Reserved - 00
117
Fine Offset for Minimum CAS to CAS Delay Time
(tCCD_Lmin), same bank group
-
83
118
Fine Offset for Minimum Activate to Activate Delay
Time (tRRD_Lmin), same bank group
-
B5
119
Fine Offset for Minimum Activate to Activate Delay
Time (tRRD_Smin), different bank group
-
CE
120
Fine Offset for Minimum Active to Active/Refresh
Delay Time (tRCmin)
-
00
121
Fine Offset for Minimum Row Precharge Delay Time
(tRPmin)
-
00
122
Fine Offset for Minimum RAS to CAS Delay Time
(tRCDmin)
-
00
123
Fine Offset for Minimum CAS Latency Time (tAAmin)
-
00
124
Fine Offset for SDRAM Maximum Cycle Time
(tCKAVGmax)
-
00
125
Fine Offset for SDRAM Minimum Cycle Time
(tCKAVGmin)
-
C2
126-127
Cyclical Redundancy Code
-
-
128
Raw Card Extension, Module Nominal Height
18.75mm
04
129
Module Maximum Thickness
Planar Double Sides
11
130
Reference Raw Card Used
Revision 0, Raw card J
08
131
DIMM Module Attributes
1 Row,1 Register
05
132
RDIMM Thermal Heat Spreader Solution
Not incorporated
00
133-134
Register Manufacturer ID Code
By Manufacturer
Variable
135
Register Revision Number
By Manufacturer
Variable
136
Address Mapping from Register to DRAM
Not Mirrored
00
137
Register Output Drive Strength for Control
Moderate Drive:
Chip select, ODT, CKE
Strong Drive:
Command/Address
65
138
Register Output Drive Strength for CK
Moderate Drive
05
139-253
Reserved - 00
254-255
Cyclical Redundancy Code (CRC)
-
-
256-319
Reserved - 00
320-321
Module Manufacturer ID Code
-
-
322
Module Manufacturing Location
-
-
323-324
Module Manufacturing Date
-
-
325-328
Module Serial Number
-
-
329-348
Module Part Number
-
-
349
Module Revision Code
-
00
350-351
DRAM Manufacturer ID Code
By Manufacturer
Variable
352
DRAM Stepping
-
00
353-381
Manufacturer Specific Data
By Manufacturer
Variable
382-383
Reserved - 00
384-551
End User Programmable
-
-
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