TOSHIBA U20GL2C53A Technical data
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TOSHIBA High Efficiency Diode Stack (HED) Silicon Epitaxial Type
U20GL2C53A
U20GL2C53A
Switching Mode Power Supply Application
Converter&Chopper Application
· Repetitive peak reverse voltage: V
· Average output recified current: I
· Ultra fast reverse-recovery time: trr = 35 ns (max)
· Low switching losses and output noise.
· Power surface mount device for thin flat package.
“TFP”
Maximum Ratings
(TOSHIBA designation)
(Ta ==== 25°C)
Characteristics Symbol Rating Unit
Repetitive peak reverse voltage V
Average output recified current IO 20 A
Peak one cycle surge forward current
(non-repetitive, sine wave)
Junction temperature Tj -40 to 150 °C
Storage temperature range T
RRM
= 20 A
O
= 400 V
RRM
I
FSM
-40 to 150 °C
stg
400 V
100 (50 Hz)
110 (60 Hz)
A
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 12-9B1A
Weight: 0.74 g (typ.)
Polarity
*①A1 ②A2
*: Common Terminal
③K
1
2003-02-17
U20GL2C53A
Electrical Characteristics
Characteristics Symbol Test Condition Min Typ. Max Unit
Peak forward voltage VFM IFM = 10 A ¾ ¾ 1.8 V
Repetitive peak reverse current I
Reverse recovery time trr I
Thermal resistance R
Note: VFM, I
, trr: A value of one cell.
RRM
(Ta ==== 25°C)
V
RRM
DC Total, Junction to Case ¾ ¾ 1.5 °C/W
th (j-c)
= 400 V ¾ ¾ 50 mA
RRM
= 2 A, di/dt = -50 A/ms ¾ ¾ 35 ns
F
Marking
※1 MARK 20GL2C TYPE U20GL2C53A
※2 A
Lot Number
Month (starting from alphabet A)
Year (last number of the christian era)
※2
※1
※3
※3
Standard Soldering Pad
unit: mm
2.0 6.0
2.0
3.2
2.5
8.0
2.0
3.8
2
2003-02-17
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