TOSHIBA TLRE50T, TLRME50T, TLSE50T, TLOE50T, TLYE50T Technical data
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查询TLFGE50T供应商
TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)50T
TOSHIBA InGaAℓP LED
TLRE50T,TLRME50T,TLSE50T,TLOE50T,TLYE50T,
TLPYE50T,TLGE50T,TLFGE50T,TLPGE50T
Panel Circuit Indicators
· φ3 mm package
· InGaAℓP technology
· All plastic mold type
· Transparent lens
· Line-up: 6 colors (red, orange, yellow, pure yellow, green and pure
green)
· High intensity light emission
· Excellent low current light output
· Applications: message boards, security devices and dashboard
displays
Line-up
Unit: mm
Product Name Color Material
TLRE50T Red
TLRME50T Red
TLSE50T Red
TLOE50T Orange
TLYE50T Yellow
TLPYE50T Pure Yellow
TLGE50T Green
TLFGE50T Green
TLPGE50T Pure Green
PInGaAl
JEDEC ―
JEITA ―
TOSHIBA 4-3E1A
Weight: 0.14 g
1
2002-01-17
TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)50T
Maximum Ratings
Product Name
TLRE50T 50 4 120
TLRME50T 50 4 120
TLSE50T 50 4 120
TLOE50T 50 4 120
TLYE50T 50 4 120
TLPYE50T 50 4 120
TLGE50T 50 4 120
TLFGE50T 50 4 120
TLPGE50T 50 4 120
(Ta ==== 25°C)
Forward Current
I
(mA)
F
Reverse Voltage
VR (V)
Power Dissipation
PD (mW)
Operating
Temperature
(°C)
T
opr
-40~100 -40~120
Storage
Temperature
T
stg
Electrical and Optical Characteristics
Product Name
TLRE50T 630 (644) 20 20 850 1800 20 1.9 2.4 20 50 4
TLRME50T 626 (636) 23 20 850 2200 20 1.9 2.4 20 50 4
TLSE50T 613 (623) 20 20 1530 3500 20 1.9 2.4 20 50 4
TLOE50T 605 (612) 20 20 1530 4500 20 2.0 2.4 20 50 4
TLYE50T 587 (590) 17 20 1530 3500 20 2.0 2.4 20 50 4
TLPYE50T 580 (583) 14 20 850 2500 20 2.0 2.4 20 50 4
TLGE50T 571 (574) 17 20 476 1500 20 2.0 2.4 20 50 4
TLFGE50T 565 (568) 15 20 272 1000 20 2.0 2.4 20 50 4
TLPGE50T 558 (562) 14 20 153 600 20 2.1 2.4 20 50 4
Unit nm mA mcd mA V mA mA V
Typ. Emission Wavelength
l
lP Dl IF
d
(Ta ==== 25°C)
Luminous Intensity
Min Typ. I
I
V
Typ. Max IF Max VR
F
Forward Voltage
VF
Reverse Current
Precautions
(°C)
IR
Please be careful of the following:
· Soldering temperature: 260°C max, soldering time: 3 s max
(soldering portion of lead: up to 2 mm from the body of the device)
· If the lead is formed, the lead should be formed up to 5 mm from the body of the device without forming stress to
the resin. Soldering should be performed after lead forming.
· This visible LED lamp also emits some IR light.
If a photodetector is located near the LED lamp, please ensure that it will not be affected by this IR light.
2
2002-01-17
TLRE50T
TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)50T
100
(mA)
F
Forward current I
Ta = 25°C
50
30
10
5
3
– VF
I
F
1
1.6
1.7 1.8 1.9 2.0 2.1 2.2 2.3
Forward voltage VF (V)
(mcd)
V
Luminous intensity I
10000
1000
100
10
I
– IF
V
Ta = 25°C
101
Forward current IF (mA)
100
3
V
I
V
– Tc
1
Relative luminous intensity I
0.5
0.3
0.1
-20 80
0
20
40
Case temperature Tc (°C)
60
Relative luminous intensity – Wavelength
1.0
IF = 20 mA
Ta = 25°C
0.8
0.6
0.4
0.2
Relative luminous intensity
0
700
680 660 640 620600580
Wavelength l (nm)
Radiation pattern
Ta = 25°C
I
– Ta
80
F
50°
60°
70°
80°
90°
40°
30°
20°
10°
0°
10°
20°
30°
40°
50°
60°
70°
80°
90°
1.00.80.6 0.4 0.2 0
(mA)
F
60
40
20
Allowable forward current I
0
0
40 60 80
100
12020
Ambient temperature Ta (°C)
3
2002-01-17
TLRME50T
TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)50T
100
(mA)
F
Forward current I
Ta = 25°C
50
30
10
5
3
– VF
I
F
1
1.6
1.7 1.8 1.9 2.0 2.1 2.2 2.3
Forward voltage VF (V)
(mcd)
V
Luminous intensity I
10000
1000
100
10
I
– IF
V
Ta = 25°C
101
Forward current IF (mA)
100
10
V
5
3
I
V
– Tc
1
Relative luminous intensity I
0.5
0.3
0.1
-20 80
0
20
40
Case temperature Tc (°C)
60
Relative luminous intensity – Wavelength
1.0
IF = 20 mA
Ta = 25°C
0.8
0.6
0.4
0.2
Relative luminous intensity
0
700
680 660 640 620600580
Wavelength l (nm)
Radiation pattern
Ta = 25°C
I
– Ta
80
F
50°
60°
70°
80°
90°
40°
30°
20°
10°
0°
10°
20°
30°
40°
50°
60°
70°
80°
90°
1.00.80.6 0.4 0.2 0
(mA)
F
60
40
20
Allowable forward current I
0
0
40 60 80
100
12020
Ambient temperature Ta (°C)
4
2002-01-17
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