Toshiba TLP848 User Manual

TOSHIBA Photointerrupter Infrared LED + Phototransistor

TLP848

TLP848

○ Camera Module for Mobile Phone
○ Digital Still Camera and Video Camera
○ Personal Equipment and Small-sized OA Equipment

The TLP848 is a surface-mount photointerrupter which is composed of a

GaAs infrared LED and a Si phototransistor.

It is an ultra compact package. Moreover it has a wider gap width than

1mm gap width of industry-standard and has a high resolution.

• Ultra compact package : 2.8×1.9×2.5mm (typ.)

• Surface-mount type

• Lead(Pb)-Free

• Gap width : 1.2mm (typ.)

• High resolution : Slit width 0.3 mm (typ.)

• High current transfer ratio : I

• Material of the package : PPS (Polyphenylene sulfide)

(UL94V-0)

Absolute Maximum Ratings

Characteristics Symbol Rating Unit

Forward current IF 30 mA

Forward current derating (Ta>25°C) ΔIF/°C −0.33 mA/°C

LED

Reverse voltage VR 5 V

Collector-emitter voltage V

Emitter-collector voltage V

Collector power dissipation PC 75 mW

Collector power dissipation derating

Detector

Collector current IC 50 mA

Operating temperature range T

Storage temperature range T

Soldering temperature (Note 1) T

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).

Note 1: The reflow time and the example of temperature profile are shown in the section entitled Mounting Method.

Note 2: Weekly code: (Three digits)

Week of manufacture
(01 for first week of year, continues up to 52 or 53)

Year of manufacture
(One low-order digits of calendar year)

= 3% (min)

C/IF

(Ta = 25°C

(Ta>25℃)

) Marking (Note 2)

15 V

CEO

5 V

ECO

ΔP

°C −1 mW/°C

C/

−30 to 85 °C

opr

−40 to 100 °C

stg

250 °C

sol

TOSHIBA 11-3B1

Weight: 0.017 g (typ.)

Weekly Code

1

2007-10-01

TLP848

Optical and Electrical Characteristics

Characteristics Symbol Test conditions Min Typ. Max Unit

Forward voltage VF IF = 10 mA 1.10 1.23 1.40 V

Reverse current IR VR = 5 V ⎯ ⎯ 10 μA

LED

Peak emission wavelength λP IF = 10 mA ⎯ 940 ⎯ nm

Dark current ID (I

Peak sensitivity wavelength λP ⎯ ⎯ 820 ⎯ nm

Detector

Current transfer ratio IC/IF

Collector-emitter saturation
voltage

Coupled

Rise time tr ⎯ 15 50

Fall time tf

) VCE = 12 V, IF = 0 ⎯ ⎯ 0.05 μA

CEO

V

CE (sat) IF

(Ta = 25°C)

V

= 2 V

CE

= 5 mA

I

F

= 10 mA, IC = 0.15 mA ⎯ 0.1 0.4 V

= 5 V, IC = 1 mA

V

CC

= 1k Ω (Note 3)

R

L

TLP848 3 ⎯ 24 %

TLP848 (R) 4 ⎯ 20 %

⎯ 15 50

Note 3: Switching time measurement circuit and waveform

I

F

VCC

I

F

V

OUT

R

L

V

OUT

t

d

t

r

t

90%

10%

t

f

s

μs

2

2007-10-01

Package Dimensions: TOSHIBA 11-3B1

TLP848

Unit: mm
Tolerance : ±0.1mm unless otherwise specified
( ): Reference value

Gate position

Center of sensor

Weight: 0.017 g (typ.)

Pin Connection

2

1

3

4

1: Cathode
2: Anode
3: Collector
4: Emitter

3

2007-10-01

TLP848

Handling and Mounting Precautions

• Care must be taken in relation to the environment in which the device is to be installed. Oil or chemicals
may cause the package to melt or crack.

• The device should be mounted on an unwarped surface.

• Do not apply stress to the resin at high temperature.

• The resin part is easily scratched, so avoid friction with hard materials.

• When installing the assembly board in equipment, ensure that this product does not come into contact with

other components.

• Conversion efficiency falls over time due to the current which flows in the infrared LED. When designing a
circuit, take into account this change in conversion efficiency over time. The ratio of fluctuation in
conversion efficiency to fluctuation in infrared LED optical output is 1:1.

Moisture-Proof Packing

• To avoid moisture absorption, the reel is packed in an aluminum bag that contains a desiccant with a
humidity indicator. Since the optical characteristics of the photointerrputer may be affected during soldering
by vaporization of the moisture which is absorbed in storable period, it should be stored under the following
conditions:

I
I

1. If the aluminum bag has been stored unopened
Temperature: 5 to 30°C
Relative humidity: 90% RH (max)
Time: 12 months

2. If the aluminum bag has been opened
Temperature: 5 to 30°C
Relative humidity: 70% RH (max)
Time: 168 h

3. Baking should be conducted within 72 h after the humidity indicator shows > 30% or the bag seal date

is over 12 months. The number of baking should be once. If the baking is conducted repeatedly, it may
affect the peel-back force and cause a problem for mounting.

Baking condition: 60 ± 5°C, 12 to 24 h
Storage period: 12 months from the seal date on the label

4. When the photointerrupter is baked, protect it from electrostatic discharge.

5. Do not toss or drop to avoid damaging the moisture-proof bag.

C/IF (t)
C/IF (0)

P

o (t)

=

P

o (0)

4

2007-10-01