TOSHIBA TLP651 Technical data

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TOSHIBA Photocoupler GaAℓAs IRed & Photo−IC

TLP651

Digital Logic Ground Isolation

Line Receiver

Microprocessor System Interfaces

Switching Power Supply Feedback Control

Analog Signal Isolation

The TOSHIBA TLP651 consists of a GaAℓAs high
diode and a high speed detector of one chip photo diode−transistor.
This unit is 8
TLP651 has internal base connection. This base pin should be used for
analog application or enable operation. If base pin is open, output signal
will be noisy by environmental condition. For this case, TLP650 is
suitable.

• Isolation voltage: 5000V

• Switching speed: t

• TTL compatible

• UL recognized: UL1577, file no. E67349

• BSI approved: BS EN60065: 2002

−lead DIP.

rms

= 0.3μs (typ.)

pHL

t

= 0.5μs (typ.) (RL = 1.9kΩ)

pLH

Certificate no. 7613
BS EN60950-1: 2002
Certificate no. 7614

(min.)

−output light emitting

Pin Configuration

TOSHIBA 11−10C4

Weight: 0.54g

(top view)

TLP651

Unit in mm

Schematic

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TLP651

Absolute Maximum Ratings

Characteristic Symbol Rating Unit

Forward current (Note 1) IF 25 mA

Pulse forward current (Note 2) IFP 50 mA

Peak transient forward
current (Note 3)

LED

Reverse voltage VR 5 V

Diode power dissipation (Note 4) PD 45 mW

Output current IO 8 mA

Peak output current IOP 16 mA

Output voltage VO −0.5~15 V

Supply voltage VCC −0.5~15 V

Detector

Base current IB 5 mA

Emitter−base reverse voltage VEB 5 V

Output power dissipation (Note 5) PO 100 mW

Operating temperature range T

Storage temperature range T

Lead solder temperature (10s) (Note 6) T

Isolation voltage
(AC, 1min., R.H.≤ 60%) (Note 7)

(Ta = 25°C)

1 A

I

FPT

−55~100 °C

opr

−55~125 °C

stg

260 °C

sol

5000 V

BV

S

rms

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).

(Note 1) Derate 0.8mA above 70°C.

(Note 2) 50% duty cycle,1ms pulse width.

Derate 1.6mA / °C above 70°C.

(Note 3) Pulse width ≤ 1μs, 300pps.

(Note 4) Derate 0.9mW / °C above 70°C.

(Note 5) Derate 2mW / °C above 70°C.

(Note 6) Soldering portion of lead: Up to 2mm from the body of the device.

(Note 7) Device considered a two terminal device: Pins 1, 2, 3 and 4 shorted together and pins 5, 6, 7 and 8 shorted

together.

2

2007-10-01

TLP651

Electrical Characteristics

Characteristic Symbol Test Condition Min. Typ. Max. Unit

Forward voltage VF IF = 16mA ― 1.65 1.85 V

Forward voltage

temperature coefficient

LED

Reverse current IR VR = 5V ― ― 10 μA

Capacitance between
terminal

High level output
current

Detector

High level supply
voltage

Current transfer ratio IO / IF

Low level output
voltage

Coupled

Isolation resistance RS

Capacitance between
input to output

Switching Characteristics

(Ta = 25°C)

/ ΔTa IF = 16mA ― −2 ― mV / °C

ΔV

F

VF = 0, f = 1MHz ― 45 ― pF

C

T

I

IF = 0mA, VCC = VO = 5.5V ― 3 500 nA

OH (1)

I

IF = 0mA, VCC = VO = 15V ― ― 5 μA

OH (2)

I

= 0mA, V

F

I

I

CCH

V

C

OH

OL

Ta = 70°C

IF = 0mA, VCC = 15V ― 0.01 1 μA

I

= 16mA

F

= 4.5V

V

CC

= 0.4V

V

O

I

= 16mA, VCC = 4.5V,

F

VS = 0, f = 1MHz (Note 7) ― 0.8 ― pF

S

= 1.1mA

I

O

(Rank 0: I

R.H.≤ 60%, V
(Note 7)

(Ta = 25°C, VCC = 5V)

= VO = 15V

CC

= 2.4mA)

O

= 500VDC

S

― ― 250 μA

Ta = 25°C 10 30 ―

Rank: O 19 30 ―

Ta = 0~70°C 5 ― ―

Rank: O 15 ― ―

― ― 0.4 V

10

1014 ― Ω

5×10

%

Test

Characteristic Symbol

Propagation delay time
(H→L)

Propagation delay time
(L→H)

Common mode transient
immunity at logic high
output (Note 8)

Common mode transient
immunity at logic low
output (Note 8)

t

t

C

C

pHL

pLH

MH

ML

Cir−

cuit

1

2

Test Condition Min. Typ. Max. Unit

IF = 0→16mA, VCC = 5V, ― 0.2 0.8

=4.1kΩ Rank O: RL=1.9kΩ ― 0.3 0.8

R

L

IF = 16→ 0mA, VCC = 5V, ― 1.0 2.0

R

=4.1kΩ Rank O: RL=1.9kΩ ― 0.5 1.2

L

I

= 0mA, VCM = 200V

F

RL = 4.1kΩ
(Rank O: R

I

=16mA, VCM = 200V

F

RL = 4.1kΩ
(Rank O: R

= 1.9kΩ)

L

= 1.9kΩ)

L

p−p

p−p

― 400 ― V / μs

― −1000 ― V / μs

μs

μs

3

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