TOSHIBA TLP631, TLP632 Technical data
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TOSHIBA Photocoupler GaAs IRed & Photo−Transistor
TLP631,TLP632
Programmable Controllers
AC / DC−Input Module
Solid State Relay
The TOSHIBA TLP631 and TLP632 consist of a photo−transistor
optically coupled to a gallium arsenide infrared emitting diode in a
six lead plastic DIP.
TLP632 is no−base internal connection for high−EMI environments.
• Collector−emitter voltage: 55 V (min.)
• Current transfer ratio: 50% (min.)
Rank GB: 100% (min.)
• Isolation voltage: 5000V
• UL recognized: UL1577, file no. E67349
Pin Configurations
(min.)
rms
(top view)
TLP631,TLP632
Unit in mm
TOSHIBA 11−7A8
Weight: 0.4 g
1
2
3
1: Anode
2: Cathode
3: N.C.
4: Emitter
5: Collector
6: Base
TLP631
6
5
4
1
2
3
1: Anode
2: Cathode
3: N.C.
4: Emitter
5: Collector
6: N.C
TLP632
6
5
4
1
2007-10-01
TLP631,TLP632
Absolute Maximum Ratings
Characteristic Symbol Rating Unit
Forward current IF 60 mA
Forward current derating (Ta ≥ 39°C) ΔIF / °C −0.7 mA / °C
Peak forward current (100μs pulse, 100pps) IFP 1 A
LED
Reverse voltage VR 5 V
Junction temperature Tj 125 °C
Collector−emitter voltage V
Collector−base voltage (TLP631) V
Emitter−collector voltage V
Emitter−base voltage (TLP631) V
Collector current IC 50 mA
Detector
Power dissipation PC 150 mW
Power dissipation derating (Ta ≥ 25°C) ΔPC / °C −1.5 mW / °C
Junction temperature Tj 125 °C
Storage temperature range T
Operating temperature range T
Lead soldering temperature (10s) T
Total package power dissipation PT 250 mW
Total package power dissipation derating (Ta≥ 25°C) ΔPT / °C −2.5 mW / °C
Isolation voltage (AC, 1 min., R.H. ≤ 60%) BVS 5000
(Ta = 25°C)
55 V
CEO
80 V
CBO
7 V
ECO
7 V
EBO
−55~125 °C
stg
−55~100 °C
opr
260 °C
sol
V
rms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Recommended Operating Conditions
Characteristic Symbol Min. Typ. Max. Unit
Supply voltage VCC ― 5 24 V
Forward current IF ― 16 25 mA
Collector current IC ― 1 10 mA
Operating temperature T
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
−25 ― 85 °C
opr
2
2007-10-01
TLP631,TLP632
Individual Electrical Characteristics
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Forward voltage VF IF = 10 mA 1.0 1.15 1.3 V
Reverse current IR VR = 5V ― ― 10 μA
LED
Capacitance CT V = 0, f = 1 MHz ― 30 ― pF
Collector−emitter breakdown
voltage
Emitter−collector breakdown
voltage
Collector−base breakdown
voltage (TLP631)
Emitter−base breakdown
Detector
voltage (TLP631)
Collector dark current I
Capacitance collector to
emitter
Coupled Electrical Characteristics
Characteristic Symbol Test Condition MIn. Typ. Max. Unit
V
(BR) CEOIC
V
(BR) ECOIE
V
(BR) CBOIC
V
(BR) EBOIE
CEO
V = 0, f = 1 MHz ― 10 ― pF
C
CE
(Ta = 25°C)
(Ta = 25°C)
= 0.5 mA 55 ― ― V
= 0.1 mA 7 ― ― V
= 0.1 mA 80 ― ― V
= 0.1 mA 7 ― ― V
VCE = 24 V ― 10 100 nA
V
CE
= 24 V, Ta = 85°C ― 2 50 μA
Current transfer ratio IC / I
Saturated CTR IC / I
Collector−emitter saturation
voltage
F (sat)
V
CE (sat) IC
IF = 5 mA, VCE = 5 V
F
IF = 1 mA, VCE = 0.4 V
= 2.4 mA, IF = 8 mA ― ― 0.4 V
Rank GB
Rank GB
50 ― 600
100 ― 600
― 60 ―
30 ― ―
%
%
3
2007-10-01
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