TOSHIBA TC74AC151P, TC74AC151F, TC74AC151FN Technical data

TC74AC151P/F/FN

TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic

TC74AC151P,TC74AC151F,TC74AC151FN

8-Channel Multiplexer

The TC74AC151 is an advanced high speed CMOS
8-CHANNEL MULTIPLEXER fabricated with silicon gate and
double-layer metal wiring C

It achieves the high speed operation similar to equivalent
Bipolar Schottky TTL while maintaining the CMOS low power
dissipation.

One of eight date input signals (D0-D7) is selected by decoding
of the three-bit address input (A, B, C). The selected data appears
on two outputs: non-inverting (Y) and inverting (W).

STROBE

The
level on the
outputs. A high level on the
low and the W output high without regard to the data or select
input conditions.

All inputs are equipped with protection circuits against static
discharge or transient excess voltage.

input provides two output conditions; a low

STROBE

2

MOS technology.

input transferrs the selected data to the

STROBE

input sets the Y output

Features

Note: xxxFN (JEDEC SOP) is not available in

Japan.

TC74AC151P

TC74AC151F

• High speed: tpd = 5.3 ns (typ.) at VCC = 5 V

• Low power dissipation: I

• High noise immunity: V

• Symmetrical output impedance: |IOH| = IOL = 24 mA (min)
Capability of driving 50 Ω

transmission lines.

• Balanced propagation delays: t

• Wide operating voltage range: V

• Pin and function compatible with 74F151

= 8 μA (max) at Ta = 25°C

CC

NIH

= V

= 28% VCC (min)

NIL

∼

t

−

pLH

pHL

(opr) = 2 to 5.5 V

CC

Pin Assignment

TC74AC151FN

Weight
DIP16-P-300-2.54A : 1.00 g (typ.)
SOP16-P-300-1.27A : 0.18 g (typ.)
SOL16-P-150-1.27 : 0.13 g (typ.)

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IEC Logic Symbol

Truth Table

Inputs Outputs

Select

C B A

X X X H L H

L L L L D0

L L H L D1 1D

L H L L D2 2D

L H H L D3

H L L L D4 4D

H L H L D5

H H L L D6

H H H L D7 7D

STROBE Y W

TC74AC151P/F/FN

0D

3D

5D

6D

X: Don’t care

System Diagram

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TC74AC151P/F/FN

Absolute Maximum Ratings (Note 1)

Characteristics Symbol Rating Unit

Supply voltage range VCC −0.5 to 7.0 V

DC input voltage VIN −0.5 to VCC + 0.5 V

DC output voltage V

Input diode current IIK ±20 mA

Output diode current IOK ±50 mA

DC output current I

DC VCC/ground current ICC ±100 mA

Power dissipation PD 500 (DIP) (Note 2)/180 (SOP) mW

Storage temperature T

Note 1: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or

even destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).

−0.5 to VCC + 0.5 V

OUT

±50 mA

OUT

−65 to 150 °C

stg

Note 2: 500 mW in the range of Ta = −40 to 65°C. From Ta = 65 to 85°C a derating factor of −10 mW/°C should be

applied up to 300 mW.

Operating Ranges (Note)

Characteristics Symbol Rating Unit

Supply voltage VCC 2.0 to 5.5 V

Input voltage VIN 0 to V

Output voltage V

Operating temperature T

Input rise and fall time dt/dV

0 to V

OUT

opr

0 to 100 (V

0 to 20 (V

CC

CC

−40 to 85 °C

= 3.3 ± 0.3 V)

CC

= 5 ± 0.5 V)

CC

Note: The operating ranges must be maintained to ensure the normal operation of the device.

Unused inputs must be tied to either VCC or GND.

V

V

ns/V

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