Toshiba SSM3K315T Schematic [ru]

SSM3K315T

TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (U-MOSⅣ)

SSM3K315T

○ High-Speed Switching Applications

• 4.5-V drive

• Low ON-resistance : R

Absolute Maximum Ratings

Characteristic Symbol Rating Unit

Drain-Source voltage V

Gate-Source voltage V

Drain current

Drain power dissipation

Channel temperature T

Storage temperature range T

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/
voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating
Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).

Note 1: The junction temperature should not exceed 150°C during use.
Note 2: Mounted on an FR4 board.

(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm

= 41.5 m (max) (@VGS = 4.5 V)

on

= 27.6 m (max) (@VGS = 10 V)

: R

on

(Ta = 25°C)

DSS

GSS

DC ID (Note 1) 6.0

Pulse I

(Note 1) 12.0

DP

PD (Note 1) 700

t = 10 s 1250

ch

stg

30 V

±20 V

150 °C

−55 to 150 °C

2

)

A

mW

Unit: mm

+0.2

2.8-0.3

+0.2

1.6-0.1

１

0.950.95

2.9±0.2

1.9±0.2

TSM

２３

0.15

0.7±0.05

0～0. 1

1: Gate

2: Source
3: Drain

JEDEC 

JEITA 

TOSHIBA 2-3S1A

Weight: 10 mg (typ.)

0.4±0.1

0.16±0.05

Electrical Characteristics

Characteristic Symbol Test Conditions Min Typ. Max Unit

Drain-Source breakdown voltage

Drain cut-off current

Gate leakage current

Gate threshold voltage

Forward transfer admittance

Drain–source ON-resistance R

Input capacitance

Output capacitance

Reverse transfer capacitance

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Switching time

Drain-Source forward voltage V

Note 3: Pulse test

Turn-on time

Turn-off time

(Ta = 25°C)

V

(BR) DSSID

V

(BR) DSXID

VDS = 30 V, VGS = 0 V ⎯ ⎯ 1 μA

I

DSS

VGS = ± 20 V, VDS = 0 V ⎯ ⎯ ±0.1 μA

I

GSS

VDS = 5 V, ID = 1 mA 1.3 ⎯ 2.5 V

V

th

⏐ VDS = 5 V, ID = 4 A (Note 3) 11.5 23.0 ⎯ S

⏐Y

fs

DS (ON)

⎯ 450 ⎯

C

iss

⎯ 120 ⎯

C

oss

C

rss

⎯ 10.1 ⎯

Q

g

⎯ 7.6 ⎯

Q

gs

Q

gd

⎯ 21 ⎯

t

on

t

off

ID = -6.0 A, VGS = 0 V (Note 3) ⎯ -0.85 -1.2 V

DSF

= 10 mA, VGS = 0 V 30 ⎯ ⎯
= 10 mA, VGS = -20 V 15 ⎯ ⎯

ID = 4.0 A, VGS = 10 V (Note 3) ⎯ 20.5 27.6

I

= 2.0 A, VGS = 4.5 V (Note 3) ⎯ 27.0 41.5

D

= 15 V, VGS = 0 V, f = 1 MHz

V

DS

⎯ 77 ⎯

V

= 15 V, I

DS

= 15 V, ID = 2.0 A,

V

DD

= 0 to 4.5 V, RG = 10 Ω

V

GS

=6.0 A, V

D

GS

= 10 V

⎯ 2.5 ⎯

⎯ 15 ⎯

Start of commercial production

V

mΩ

pF

nC

ns

2008-09

1

2014-03-01

Switching Time Test Circuit

)

SSM3K315T

(a) Test Circuit (b) VIN

V

DD

OUT

(c) V

OUT

4.5 V

0

10 μs

IN

G

R

VDD = 15 V

= 10 Ω

R

G

Duty ≤ 1%
V

: tr, tf < 5 ns

IN

Common Source
Ta = 25°C

Marking Equivalent Circuit

3

KDS

1 2

3

12

Handling Precaution

4.5 V

0 V

V

DD

V

DS (ON

(top view)

10%

t

on

90%

10%

90%

t

r

t

f

t

off

When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.

Usage Consideration

Let Vth be the voltage applied between gate and source that causes the drain current (ID) to be low (1 mA for the
SSM3K315T). Then, for normal switching operation, V
V

This relationship can be expressed as: V

th.

GS(off)

< Vth < V

Take this into consideration when using the device

must be higher than V

GS(on)

GS(on).

and V

th,

must be lower than

GS(off)

2

2014-03-01

ID – VDS

12

10

(A)

D

Drain current I

10 V

4.5 V

8

6

4

2

0

0

0.2

4.0 V

0.4 0.6 1.0

3.5 V

VGS = 3.0 V

Common Source
Ta = 25 °C

0.8

Drain–source voltage VDS (V)

R

100

(m)

50

DS (ON)

R

DS (ON)

– V

GS

ID =4.0 A

Common Source

25 °C

Ta = 100 °C

Drain–source ON-resistance

− 25 °C

0

0

10 20

Gate–source voltage VGS (V)

R

100

Common Source

(m)

50

DS (ON)

R

Drain–source ON-resistance

0

−50 0 50 150

ID = 4.0 A / VGS = 10 V

DS (ON)

– Ta

2.0 A / 4.5 V

100

Ambient temperature Ta (°C)

100

Common Source

VDS = 5 V

10

(A)

D

1

0.1

0.01

Drain current I

0.001

0.0001
0

Gate–source voltage VGS (V)

100

Common Source
Ta = 25°C

(m)

50

DS (ON)

R

4.5 V

Drain–source ON-resistance

(V)

th

VGS = 10 V

0

0 2 12.6

2.0

1.0

Gate threshold voltage V

0

−50

SSM3K315T

ID – VGS

Ta = 100 °C

25 °C

− 25 °C

2.0

R

48

Drain current ID (A)

0

Ambient temperature Ta (°C)

– ID

DS (ON)

Vth – Ta

Common Source

VDS = 5 V

ID = 1 mA

50 100

10

4.0

150

3

2014-03-01