查询SSM3K14T供应商
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
SSM3K14T
SSM3K14T
DC-DC Converter
High Speed Switching Applications
· Small Package
· Low ON-resistance : R
: Ron = 57 mΩ (max) (@VGS = 4.5 V)
· High speed : t
: t
= 24 ns (typ.)
on
= 19 ns (typ.)
off
Maximum Ratings
Characteristic Symbol Rating Unit
Drain-Source voltage VDS 30 V
Gate-Source voltage V
Drain current
Drain power dissipation (Ta = 25°C)
Channel temperature Tch 150 °C
Storage temperature range T
= 39 mΩ (max) (@VGS = 10 V)
on
(Ta ==== 25°C)
DC ID 4.0
Pulse I
±20 V
GSS
(Note 2) 8.0
DP
PD (Note 1) 0.7
t = 10 s 1.25
-55~150 °C
stg
A
W
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 2-3S1A
Note 1: Mounted on FR4 board
(25.4 mm ´ 25.4 mm ´ 1.6 t, Cu pad: 645 mm
Note 2: The pulse width limited by max channel temperature.
2
)
Weight: 10 mg (typ.)
Marking Equivalent Circuit
3
KDK
1 2
3
12
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the
environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and
containers and other objects that come into direct contact with devices should be made of anti-static materials.
The Channel-to-Ambient thermal resistance R
the board material, board area, board thickness and pad area, and are also affected by the environment in
which the product is used. When using this device, please take heat dissipation fully into account.
th (ch-a)
and the drain power dissipation PD vary according to
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SSM3K14T
V
V
Electrical Characteristics
Characteristic Symbol Test Condition Min Typ. Max Unit
Gate leakage current I
Drain-Source breakdown voltage
Drain Cut-off current I
Gate threshold voltage Vth VDS = 5 V, ID = 0.1 mA 1.0 ¾ 2.5 V
Forward transfer admittance |Yfs| VDS = 5 V, ID = 2 A (Note 3) 3.2 6.4 ¾ S
Drain-Source ON resistance R
Total gate charge Qg V
Input capacitance C
Reverse transfer capacitance C
Output capacitance C
Rise time tr ¾ 15 ¾
Switching time
Turn-on time ton ¾ 24 ¾
Fall time tf ¾ 6 ¾
Turn-off time t
(Ta ==== 25°C)
V
V
VGS = ±16 V, VDS = 0 ¾ ¾ ±1 mA
GSS
(BR) DSSID
(BR) DSXID
DSS
DS (ON)
VDS = 15 V, VGS = 0, f = 1 MHz ¾ 460 ¾ pF
iss
VDS = 15 V, VGS = 0, f = 1 MHz ¾ 62 ¾ pF
rss
oss
off
= 1 mA, VGS = 0 30 ¾ ¾
= 1 mA, VGS = -20 V 15 ¾ ¾
VDS = 30 V, VGS = 0 ¾ ¾ 1 mA
ID = 2 A, VGS = 10 V (Note 3) ¾ 31 39
ID = 2 A, VGS = 4.5 V (Note 3) ¾ 45 57
I
= 2 A, VGS = 4.0 V (Note 3) ¾ 50 67
D
~
-
DD
VDS = 15 V, VGS = 0, f = 1 MHz ¾ 106 ¾ pF
= 15 V, ID = 2 A
V
DD
= 0~4 V, RG = 10 W
V
GS
= 4 A, VGS = 4 V ¾ 5.0 ¾ nC
24 V, I
D
¾ 19 ¾
V
mW
ns
Note 3: Pulse test
Switching Time Test Circuit
(a) Test circuit
10 ms
4 V
IN
0
(b)
(c)
IN
OUT
I
D
G
R
L
R
V
DD
VDD = 15 V
OUT
R
D.U.<1%
V
Common Source
Ta = 25°C
= 10 W
G
: tr, tf < 5 ns
IN
4 V
0
V
DD
V
DS (ON)
90%
10%
tr t
ton t
off
Precaution
Vth can be expressed as voltage between gate and source when low operating current value is ID = 100 mA for
this product. For normal switching operation, V
lower voltage than V
(relationship can be established as follows: V
th
.
GS (off)
Please take this into consideration for using the device.
V
recommended voltage of 4 V or higher to turn on this product.
GS
requires higher voltage than Vth and V
GS (on)
< Vth < V
GS (on)
)
GS (off)
10%
90%
f
requires
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SSM3K14T
9
10 4.5 4
8
7
6
(A)
D
5
4
3
Drain current I
2
1
0
Drain-Source voltage VDS (V)
100
Common Source
Ta = 25°C
80
60
(mW)
40
DS (ON)
R
Drain-Source on resistance
20
0
0 6
Drain current ID (A)
100
ID = 2 A
Common Source
80
60
(mW)
40
DS (ON)
R
Drain-Source on resistance
20
0
-25 75
25
Ambient temperature Ta (°C)
I
D
R
DS (ON)
4
R
DS (ON)
– VDS
3.3
1
–ID
– Ta
Common Source
Ta = 25°C
3.0
2.8
VGS = 2.6 V
VGS = 4 V
VGS = 4 V
4.5 V
10 V
100 50
2 0.5 1.5
4.5 V
10 V
102 8
1500 125
10000
1000
100
(mA)
D
10
1
Drain current I
0.1
0.01
0
200
160
120
(mW)
80
DS (ON)
R
Drain-Source on resistance
40
0
0 6
3
VDS = 5 V
ID = 0.1 mA
2.5
Common Source
(V)
th
2
1.5
1
0.5
Gate threshold voltage V
0
-25 75 100 50
– VGS
I
D
Ta = 100°C
25°C -25°C
VDS = 5 V
Common Source
2
Gate-Source voltage VGS (V)
DS (ON)
Ta = 100°C
-25°C
V
– Ta
th
– VGS
Common Source
ID = 2 A
25
8
R
4
Gate-Source voltage VGS (V)
25
Ambient temperature Ta (°C)
4 1 3
122 10
1500 125
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2002-01-24
SSM3K14T
f
f
r
100
VDS = 5 V
Common Source
50
Ta = 25°C
30
10
5
| (S)
fs
3
|Y
1
Forward transfer admittance
0.5
0.3
| – ID
|Y
fs
0.1
100.01 1 0.1
Drain current ID (A)
10
Dynamic Input Characteristic
8
(V)
GS
6
4
12 V
VDD = 24 V
Gate-Source Voltage V
2
0
2 6 10
Total Gate charge Qg (nC)
ID = 4 A
Common Source
Ta = 25°C
120 8 4
(Ａ)
Drain reverse current I
DR
4
Common Source
VGS = 0
3.5
Ta = 25°C
3
2.5
2
1.5
1
0.5
0
– VDS
I
DR
D
G
Drain-Source voltage VDS (V)
IDR
S
-1-0.2 -0.8 0 -0.6 -0.4
1000
Capacitance (pF)
1000
Switching time t (ns)
500
300
100
50
Common Source
30
VGS = 0
f = 1 MHz
Ta = 25°C
10
500
300
100
50
30
10
5
3
1
C – V
DS
Drain-Source voltage VDS (V)
t – I
D
VDD = 15 V
Common Source
VGS = 0~4 V
t
of
t
t
on
t
Drain current ID (A)
Rg = 10 W
Ta = 25°C
C
iss
C
oss
C
rss
1000.1 10 1
100.01 1 0.1
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SSM3K14T
10
ID max (pulsed)
ID max (continuous)
Safe operating area
1
(A)
D
DC operation
Ta = 25°C
Drain current I
0.1
Mounted on FR4 board
(25.4 mm ´ 25.4 mm ´ 1.6 t,
Cu pad: 645 mm2)
*: Single nonrepetitive Pulse
Ta = 25°C
Curves must be derated
linearly with increase in
temperature.
0.01
0.1
Drain-Source voltage VDS (V)
1000
(°C /W)
th
100
10
1
Transient thermal impedance r
0.001
1.5
10 s*
10 ms*
1 ms*
(W)
t = 10 s
1.25
D
1
DC
0.75
0.5
0.25
Drain power dissipation P
0
V
max
DSS
1 100
10
r
– tw
th
Single pulse
Mounted on FR4 board
(25.4 mm ´ 25.4 mm ´ 1.6 t,
Cu pad: 645 mm2)
0.01 0.1 1 10 1000 100
Pulse width tw (s)
– Ta
P
D
Mounted on FR4 board
(25.4 mm ´ 25.4 mm ´ 1.6 t,
Cu pad: 645 mm2)
25 75 125
Ambient temperature Ta (°C)
1500 100 50
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SSM3K14T
A
RESTRICTIONS ON PRODUCT USE
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
000707EA
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2002-01-24
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