TOSHIBA SSM3K11T Technical data

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TOSHIBA Field Effect Transistor

Under Development

Silicon N Channel MOS Type (Lateral)

S S M 3 K 1 1 T

SSM3K11T

The information contained herein in subject to change without notice;
likewise, product development may be discontinued.

DC-DC Converter
High Speed Switching Applications

• Ultra-high-speed switching achieved using a lateral structure
t

• Low reverse transfer capacitance: C

• Thin package

• Low ON-resistance: R

• Direct drive by CMOS possible

= 6.4 ns, t

on

Maximum Ratings

Characteristic Symbol Rating Unit

Drain-Source voltage VDS 40 V

Gate-Source voltage V

Drain current

Drain power dissipation PD (Note1) 1250 mW

Channel temperature Tch 150 °C

Storage temperature range T

Note1: Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 t, Cu pad: 645 mm

= 4.9 ns

off

= 6.8 pF (typ.)

rss

DS (ON)

(Ta ==== 25°C)

= 1.2 Ω (typ.) ＠VGS = 2.5 V

±10 V

GSS

DC ID 500 mA

Pulse I

(Note2) 2 A

DP

−55~150 °C

stg

2

, t = 10 s)

Unit in: mm

JEDEC TO-236MOD

EIAJ SC-59

TOSHIBA 2-3S1B

Weight: 10 mg

Note2: The pulse width limited by max channel temperature.

Handling Precaution

The Channel-to-Ambient thermal resistance R
the board material, board area, board thickness and pad area, and are also affected by the environment in
which the product is used. When using this device, please take heat dissipation fully into account.

• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general
can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of th
buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and
to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury o
damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in th
most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling
Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..

• The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal
equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are
neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction o
failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energ
control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this documen
shall be made at the customer’s own risk.

• The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed b
TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its
use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION o
others.

• The information contained herein is subject to change without notice.

th (ch-a)

and the drain power dissipation PD vary according to

000707EAA1

2000-08-28 1/2

Equivalent Circuit Marking

<

S

G D

Electrical Characteristics

Characteristic Symbol Test Condition Min Typ. Max Unit

(Ta ==== 25°C)

SSM3K11T

K X

Gate leakage current I

Drain-Source breakdown voltage V

Drain Cut-off current I

Gate threshold voltage Vth VDS = 3 V, ID = 0.1 mA 0.8  1.4 V

Forward transfer admittance |Yfs| VDS = 3 V, ID = 500 mA (Note3) 0.55 1.1  S

Drain-Source ON resistance R

Input capacitance C

Reverse transfer capacitance C

Output capacitance C

Rise time tr  2.9 

Switching time

Turn-on time ton  6.4 

Fall time tf  2.1 

Turn-off time t

VGS = ±10 V, VDS = 0   ±0.1 µA

GSS

(BR) DSS

ID = 1 mA, VGS = 0 40   V

VDS = 40 V, VGS = 0   1 µA

DSS

ID = 250 mA, VGS = 2.5 V (Note3)  1.2 1.8

DS (ON)

VDS = 3 V, VGS = 0, f = 1 MHz  64  pF

iss

VDS = 3 V, VGS = 0, f = 1 MHz  6.8  pF

rss

oss

off

= 500 mA, VGS = 4 V (Note3)  1.0 1.3

I

D

VDS = 3 V, VGS = 0, f = 1 MHz  38  pF

= 10 V, ID = 250 mA

V

DD

= 0~2.5 V

V

GS

 4.9 

Note3: Pulse test

Switching Time Test Circuit

(a) Test circuit

1 µs

2.5 V
IN

0

I

D

G

R

L

R

V

DD

VDD = 10 V

OUT

R
D.U.
V
Common source
Ta = 25°C

= 50 Ω

G

1%

=

: tr, tf < 5 ns

IN

(b) VIN

(c) V

OUT

2.5 V

0
V

DD

V

DS (ON)

90%

10%

t

t

r

10%

90%

f

Ω

ns

ton t

off

Precaution

Vth can be expressed as voltage between gate and source when low operating current value is I
this product. For normal switching operation, V
lower voltage than V

th

.

(relationship can be established as follows: V

GS (off)

requires higher voltage than Vth and V

GS (on)

< Vth < V

GS (on)

)
Please take this into consideration for using the device.
V

recommended voltage of 2.5 V or higher to turn on this product.

GS

= 100 µA for

D

requires

GS (off)

2000-08-28 2/2