查询SSM3K01T供应商
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K01T
SSM3K01T
High Speed Switching Applications
· Small Package
· Low on Resistance : R
: R
· Low Gate Threshold Voltage: V
(@V
Maximum Ratings
Characteristic Symbol Rating Unit
Drain-Source voltage VDS 30 V
Gate-Source voltage V
Drain current
Drain power dissipation (Ta = 25°C)
Channel temperature Tch 150 °C
Storage temperature range T
Note1: Mounted on FR4 board
(25.4 mm ´ 25.4 mm ´ 1.6 t, Cu pad: 645 mm
Note2: The pulse width limited by max channel temperature.
= 120 mΩ (max) (@VGS = 4 V)
on
= 150 mΩ (max) (@VGS = 2.5 V)
on
= 0.6~1.1 V
th
= 3 V, ID = 0.1 mA)
DS
(Ta ==== 25°C)
DC ID 3.2
Pulse
±10 V
GSS
I
DP
(Note2)
P
D
(Note1)
-55~150 °C
stg
6.4
1250 mW
2
, t = 10 s)
A
Handling Precaution
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 2-3S1A
Weight: 10 mg (typ.)
When handling individual devices (which are not yet mounted on a circuit board), be sure that the
environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and
containers and other objects that come into direct contact with devices should be made of anti-static materials.
The Channel-to-Ambient thermal resistance R
the board material, board area, board thickness and pad area, and are also affected by the environment in
which the product is used. When using this device, please take heat dissipation fully into account.
th (ch-a)
and the drain power dissipation PD vary according to
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2002-01-24
Marking Equivalent Circuit
V
V
3
K W
3
SSM3K01T
1 2
12
Electrical Characteristics
Characteristic Symbol Test Condition Min Typ. Max Unit
Gate leakage current I
Drain-Source breakdown voltage V
Drain Cut-off current I
Gate threshold voltage Vth VDS = 3 V, ID = 0.1 mA 0.6 ¾ 1.1 V
Forward transfer admittance |Yfs| VDS = 3 V, ID = 1.6 A (Note3) 2.6 5.2 ¾ S
Drain-Source ON resistance R
Drain-Source ON resistance R
Input capacitance C
Reverse transfer capacitance C
Output capacitance C
Switching time
Turn-on time ton ¾ 45 ¾
Turn-off time t
(Ta ==== 25°C)
VGS = ±10 V, VDS = 0 ¾ ¾ ±1 mA
GSS
(BR) DSSID
DSS
DS (ON)
DS (ON)
VDS = 10 V, VGS = 0, f = 1 MHz ¾ 152 ¾ pF
iss
VDS = 10 V, VGS = 0, f = 1 MHz ¾ 41 ¾ pF
rss
oss
off
= 1 mA, VGS = 0 30 ¾ ¾ V
VDS = 30 V, VGS = 0 ¾ ¾ 1 mA
ID = 1.6 A, VGS = 4 V (Note3) ¾ 85 120 mW
ID = 1.3 A, VGS = 2.5 V (Note3) ¾ 115 150 mW
VDS = 10 V, VGS = 0, f = 1 MHz ¾ 102 ¾ pF
= 15 V, ID = 0.5 A
V
DD
= 0~2.5 V, RG = 4.7 W
V
GS
¾ 69 ¾
Note3: Pulse test
Switching Time Test Circuit
nS
(a) Test circuit
10 ms
2.5 V
IN
0
I
D
G
R
L
R
V
DD
VDD = 15 V
OUT
R
= 4.7 W
G
D.U.<1%
V
IN
COMMON SOURCE
Ta = 25°C
: tr, tf < 5 ns
(b)
VGS
(c)
OUT
VDS
IN
2.5 V
0
V
DD
V
DS (ON)
90%
10%
tr t
ton t
off
Precaution
Vth can be expressed as voltage between gate and source when low operating current value is ID = 100 mA fo r
this product. For normal switching operation, V
lower voltage than V
th
.
(relationship can be established as follows: V
Please take this into consideration for using the device.
V
recommended voltage of 2.5 V or higher to turn on this product.
GS
GS (off)
requires higher voltage than Vth and V
GS (on)
< Vth < V
GS (on)
)
GS (off)
10%
90%
f
requires
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SSM3K01T
4
3.5
3
(A)
2.5
D
2
1.5
Drain current I
1
0.5
0
4.0
10
0
2.5
0.5 1 1.5 2
Drain-Source voltage VDS (V)
200
Common Source
Ta = 25°C
160
120
(m9)
Drain-Source on resistance
DS (ON)
R
80
40
VGS = 2.5 V
VGS = 4 V
0
0
1 2 3 4 5
Drain current ID (A)
10
Common Source
VDS = 3 V
Ta = 25°C
| (S)
fs
|Y
1
Forward transfer admittance
0.1
0.01
Drain current ID (A)
I
2.1
R
DS (ON)
|Y
– VDS
D
| – ID
fs
– ID
Common Source
Ta = 25°C
1.9 V
1.7 V
VGS = 1.5 V
– VGS
I
10000
Common Source
VDS = 3 V
1000
100
(mA)
D
10
1
Drain current I
0.1
0.01
0
Gate-Source voltage VGS (V)
D
Ta = 25°C 100°C
-25°C
1.5 2 0.5 1 2.5 3
DS (ON)
– Ta
250
R
Common Source
200
150
(m9)
100
RDS (ON)
Drain-Source on resistance
50
0
-50
-25 125 150 75 100 50 0 25
VGS = 2.5 V, ID = 1.3 A
VGS = 4 V, ID = 1.6 A
Ambient temperature Ta (°C)
DS
Common Source
VGS = 0
f = 1 MHz
Ta = 25°C
C
iss
C
oss
C
rss
100 1 10
1000
C – V
100
Capacitance C (pF)
10
10 0.1 1
0.1
Drain-Source voltage VDS (V)
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SSM3K01T
f
1000
100
Switching time t (ns)
ton
tr
10
0.01
10
ID max (pulsed)
ID max (continuous)
Drain current ID (A)
Safe operating area
(A)
D
0.1
Drain current I
0.01
1
DC operation
Ta = 25°C
Mounted on FR4 board
(25.4 mm ´ 25.4 mm
´ 1.6 t,
Cu Pad: 645 mm2)
*: Single nonrepetitive
Pulse
Ta = 25°C
Curves must be derated
linearly with increase in
temperature.
0.1 100 10 1
Drain-source voltage VDS (V)
1000
(°C /W)
th
100
10
Transient thermal impedance r
1
0.001
t – I
D
Common Source
VDD = 15 V
VGS = 0~2.5 V
RG = 4.7 W
Ta = 25°C
t
of
tf
0.1 1
(W)
D
Drain power dissipation P
1 ms*
10 ms*
10 s*
V
DSS
max
r
– tw
th
Pulse width tw (s)
1.5
t = 10 s
1.25
1
0.75
DC
0.5
0.25
0
0
25 50 75 100 125 150
Ambient temperature Ta (°C)
Single pulse
Mounted on FR4 board
(25.4 mm ´ 25.4 mm ´ 1.6 t,
Cu Pad: 645 mm2)
– Ta
P
D
Mounted on FR4 board
(25.4 mm ´ 25.4 mm ´ 1.6 t,
Cu Pad: 645 mm2）
1000 0.01 0.1 1 10 100
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2002-01-24
SSM3K01T
A
RESTRICTIONS ON PRODUCT USE
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
000707EA
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2002-01-24
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