查询SSM3J13T供应商
SSM3J13T
TOSHIBA Field Effect Transistor
Silicon P Channel MOS Type (U-MOSII)
SSM3J13T
Power Management Switch
High Speed Switching Applications
· Small Package
· Low on Resistance : R
: R
· Low Gate Threshold Voltage
Maximum Ratings
Characteristics Symbol Rating Unit
Drain-Source voltage V
Gate-Source voltage V
Drain current
Drain power dissipation
Channel temperature T
Storage temperature range T
= 70 mΩ (max) (@VGS = −4 V)
on
= 95 mΩ (max) (@VGS = −2.5 V)
on
(Ta ==== 25°C)
DC I
Pulse
DS
GSS
D
I
DP
(Note 2)
P
(Note 1)
ch
stg
Unit: mm
D
-12
±8
-3.0
-6.0
1.25 W
150 °C
-55~150 °C
V
V
A
JEDEC ―
JEITA ―
TOSHIBA 2-3S1A
Note 1: Mounted on FR4 board
(25.4 mm ´ 25.4 mm ´ 1.6 t, Cu pad: 645 mm
Note 2: The pulse width limited by max channel temperature.
2
, t = 10 s)
Weight: 10 mg (typ.)
Marking Equivalent Circuit
3
KDH
1 2
3
12
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the
environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and
containers and other objects that come into direct contact with devices should be made of anti-static materials.
The Channel-to-Ambient thermal resistance R
the board material, board area, board thickness and pad area, and are also affected by the environment in
which the product is used. When using this device, please take heat dissipation fully into account
th (ch-a)
and the drain power dissipation PD vary according to
1
2002-03-27
SSM3J13T
V
Electrical Characteristics
Characteristic Symbol Test Condition Min Typ. Max Unit
Gate leakage current I
Drain-Source breakdown voltage
Drain Cut-off current I
Gate threshold voltage Vth VDS = -3 V, ID = -0.1 mA -0.45 ¾ -1.1 V
Forward transfer admittance |Yfs| VDS = -3 V, ID = -1.5 A (Note 3) 3.8
Drain-Source ON resistance R
Input capacitance C
Reverse transfer capacitance C
Output capacitance C
Switching time
Turn-on time ton ¾ 48 ¾
Turn-off time t
(Ta ==== 25°C)
V
V
VGS = ±8 V, VDS = 0 ¾ ¾ ±1 mA
GSS
(BR) DSSID
(BR) DSXID
DSS
DS (ON)
VDS = -10 V, VGS = 0, f = 1 MHz ¾ 890 ¾ pF
iss
VDS = -10 V, VGS = 0, f = 1 MHz ¾ 203 ¾ pF
rss
oss
off
= -1 mA, VGS = 0 -12 ¾ ¾ V
= -1 mA, VGS = 8 V -4 ¾ ¾ V
VDS = -12 V, VGS = 0 ¾ ¾ -1 mA
¾
ID = -1.5 A, VGS = -4 V (Note 3) ¾ 50 70
ID = -1.5 A, VGS = -2.5 V (Note 3) ¾ 70 95
I
= -1.5 A, VGS = -2.0 V (Note 3) ¾ 90 180
D
VDS = -10 V, VGS = 0, f = 1 MHz ¾ 288 ¾ pF
= -10 V, ID = -1 A
V
DD
= 0~-2.5 V, RG = 4.7 W
V
GS
¾ 120 ¾
¾ S
Note 3: Pulse test
mW
ns
Switching Time Test Circuit
(a) Test circuit
0
-2.5
10 ms
IN
VDD = -10 V
OUT
R
= 4.7 W
G
G
R
V
DD
D.U.<1%
V
IN
COMMON SOURCE
Ta = 25°C
: tr, tf < 5 ns
(b) VIN
(c) V
OUT
0 V
-2.5 V
V
DS (ON)
V
DD
10%
90%
10%
tr t
ton t
Precaution
Vth can be expressed as voltage between gate and source when low operating current value is ID = -100 mA
for this product. For normal switching operation, V
requires lower voltage than V
(relationship can be established as follows: V
th
.
GS (off)
Please take this into consideration for using the device.
V
recommended voltage of -2.5 V or higher to turn on this product.
GS
requires higher voltage than Vth and V
GS (on)
< Vth < V
GS (on)
)
90%
off
GS (off)
f
2
2002-03-27
SSM3J13T
-4
-4 V
-3
(A)
D
-2
-2.5 V
-2.0 V
-1.8 V
Drain current I
-1
0
0
-0.5 -1 -1.5 -2
Drain-Source voltage VDS (V)
250
Common Source
Ta = 25°C
200
150
(mW)
100
DS (ON)
R
Drain-Source on resistance
50
0
0
-2 -4 -6
Drain current ID (A)
160
Drain-Source on resistance
Common
140
Source
ID = -1.5 A
120
100
(mW)
80
60
DS (ON)
R
40
20
0
-25
0 25 150
Ambient temperature Ta (°C)
– VDS
I
D
Common Source
Ta = 25°C
-1.6 V
VGS = -1.2 V
DS (ON)
–ID
VGS = -2 V
-2.5 V
-4 V
R
R
– Ta
DS (ON)
VGS = -2 V
-2.5 V
-4 V
50 75 100 125
-1.5 V
-1.4 V
– VGS
I
-10000
Common Source
VDS = -3 V
-1000
-100
(mA)
D
-10
-1
Drain current I
-0.1
-0.01
0
Gate-Source voltage VGS (V)
D
75°C
-25°C
Ta = 25°C
-1.5 -2 -0.5 -1
DS (ON)
– VGS
Common Source
ID = -1.5 A
Ta = 25°C
500
R
400
300
(mW)
200
DS (ON)
R
Drain-Source on resistance
100
0
0
-2 -4 -6 -8
Gate-Source voltage VGS (V)
|Y
| – ID
100
10
| (S)
fs
|Y
1
Forward transfer admittance
0.1
-0.01
fs
-1 -0.1
Drain current ID (A)
Common Source
VDS = -3 V
Ta = 25°C
-10
3
2002-03-27
SSM3J13T
-1
-0.8
(V)
th
-0.6
-0.4
– Ta
V
th
Common Source
VDS = -3 V
ID = -0.1 mA
-0.2
Gate threshold voltage V
0
-25 1500
25 50 75 100 125
Ambient temperature Ta (°C)
1000
500
300
100
50
30
Switching time t (ns)
ton
10
-0.01
-0.1
Drain current ID (A) Drain-Source voltage VDS (V)
t – I
D
t
off
tf
t
r
-1 -10
Common Source
VDD = -10 V
VGS = 0~ -2.5 V
Ta = 25°C
RG = 4.7 W
1.5
t = 10 s
1.25
(W)
D
1
Drain power dissipation P
DC
0.75
0.5
0.25
0
0 150 75 25 100 50 125
Ambient temperature Ta (°C)
– Ta
P
D
Mounted on FR4 board
(25.4 mm ´ 25.4 mm ´ 1.6 t,
Cu Pad: 645 mm2）
1400
C – V
1200
1000
800
600
400
Capacitance C (pF)
200
0
0 14
4 8 12
2 6 10
Drain-Source voltage VDS (V)
DS
Common Source
VGS = 0
f = 1 MHz
Ta = 25°C
– VDS
I
DR
D
(A)
DR
-3
Common Source
VGS = 0
Ta = 25°C
G
-2
S
-1
Drain reverse current I
0
0 1.2 0.8 0.4
Ciss
Coss
Crss
4
2002-03-27
SSM3J13T
-10
ID max (pulsed)
Safe operating area
ID max (continuous)
-1
(A)
D
DC
operation
Drain current I
Mounted on FR4 board
-0.1
(25.4 mm ´ 25.4 mm
´ 1.6 t,
Cu Pad: 645 mm2)
*: Single nonrepetitive
Pulse
Ta = 25°C
Curves must be derated
linearly with increase in
temperature.
-0.01
-0.1
Drain-Source voltage VDS (V)
-1 -100
1000
100
(°C /W)
th
10
1
Transient thermal impedance r
0.1
0.0001 1000 0.001 0.01 0.1 1 100
10 ms*
10 s*
V
DSS
max
-10
Single pulse
Mounted on FR4 board
(25.4 mm ´ 25.4 mm ´ 1.6 t,
Cu Pad: 645 mm2)
r
– tw
th
Pulse width tw (s)
10
5
2002-03-27
SSM3J13T
A
RESTRICTIONS ON PRODUCT USE
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
000707EA
6
2002-03-27
Loading...