TOSHIBA SSM3J02T Technical data

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TOSHIBA Field Effect Transistor Silicon P Channel MOS Type

SSM3J02T

SSM3J02T

Power Management Switch

High Speed Switching Applications

· Component package suitable for high-density mounting

· Small Package

· Low ON Resistance : Ron = 0.5 Ω (max) (@VGS = −4 V)

: R

· Low-voltage operation possible

Maximum Ratings

Characteristic Symbol Rating Unit

Drain-Source voltage VDS -30 V

Gate-Source voltage V

Drain current

Drain power dissipation (Ta = 25°C)

Channel temperature Tch 150 °C

Storage temperature range T

Note1: Mounted on FR4 board

= 0.7 Ω (max) (@VGS = −2.5 V)

on

(Ta ==== 25°C)

DC ID -1.5

Pulse

±10 V

GSS

I

DP

(Note2)

P

D

(Note1)

-55 to 150 °C

stg

1250 mW

-3.0

A

Unit: mm

JEDEC ―

JEITA ―

TOSHIBA 2-3S1A

Weight: 10 mg (typ.)

(25.4 mm ´ 25.4 mm ´ 1.6 t, Cu pad: 645 mm2, t = 10 s)

Note2: The pulse width limited by max channel temperature.

Marking Equivalent Circuit

3

D D

1 2

3

12

Handling Precaution

When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.

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SSM3J02T

V

<

Electrical Characteristics

Characteristic Symbol Test Condition Min Typ. Max Unit

Gate leakage current I

Drain-Source breakdown voltage V

Drain Cut-off current I

Gate threshold voltage Vth VDS = -3 V, ID = -0.1 mA -0.6 ¾ -1.1 V

Forward transfer admittance |Yfs| VDS = -3 V, ID = -0.3 A (Note3) 0.6 ¾ ¾ S

Drain-Source ON resistance R

Input capacitance C

Reverse transfer capacitance C

Output capacitance C

Switching time

Turn-on time ton ¾ 55 ¾

Turn-off time t

(Ta ==== 25°C)

VGS = ±10 V, VDS = 0 ¾ ¾ ±1 mA

GSS

(BR) DSSID

DSS

DS (ON)

VDS = -10 V, VGS = 0, f = 1 MHz ¾ 150 ¾ pF

iss

VDS = -10 V, VGS = 0, f = 1 MHz ¾ 21 ¾ pF

rss

oss

off

= -1 mA, VGS = 0 -30 ¾ ¾ V

VDS = -30 V, VGS = 0 ¾ ¾ -1 mA

ID = -0.3 A, VGS = -4 V (Note3) ¾ 0.4 0.5

= -0.3 A, VGS = -2.5 V (Note3) ¾ 0.55 0.7

I

D

VDS = -10 V, VGS = 0, f = 1 MHz ¾ 61 ¾ pF

= -15 V, ID = -0.3 A,

V

DD

V

= 0 to -2.5 V, RG = 4.7 W

GS

¾ 52 ¾

Note3: Pulse test

Switching Time Test Circuit

(a) Test circuit

0

-2.5 V

10 ms

V

IN

IN

G

R

VDD = -15 V
R

= 4.7 W

G

D.U.
V

IN

COMMON SOURCE
Ta = 25°C

1%

: tr, tf < 5 ns

(b) VIN

V

(c) V

OUT

V

GS

DS

OUT

L

R

V

DD

-2.5

V

DS (ON)

0

V

DD

tr t

ton t

90%

90%

f

off

10%

10%

W

ns

Precaution

Vth can be expressed as voltage between gate and source when low operating current value is ID = -100 mA
for this product. For normal switching operation, V
requires lower voltage than V

(relationship can be established as follows: V

th

.

GS (off)

Please take this into consideration for using the device.

V

recommended voltage of -2.5 V or higher to turn on this product.

GS

requires higher voltage than Vth and V

GS (on)

< Vth < V

GS (on)

)

2

GS (off)

2002-01-17

SSM3J02T

-1.4

-1.2

-4.0

-1

(A)

D

-0.8

-0.6

-0.4

Drain current I

-0.2

0

0

-0.5 -1 -1.5 -2

Drain-source voltage VDS (V)

1.5

1

(9)

DS (ON)

R

0.5

Drain-Source on resistance

0

0

-0.4 -0.8 -1.2

-0.2 -0.6 -1

Drain current ID (A)

10

Common Source

VDS = -3 V

3

Ta = 25°C

1

| (S)

fs

|Y

0.3

0.1

Forward transfer admittance

0.03

0.01

-0.001

-0.01 -0.1 -1 -4

Drain current ID (A)

I

-2.5

R

DS (ON)

|Y

– VDS

D

| – ID

fs

-2.2

– ID

VGS = -2.5 V

Common Source

Ta = 25°C

-2.0

-1.8

-1.6

VGS = -1.4 V

Common Source

Ta = 25°C

-4 V

(mA)

D

Drain current I

(9)

RDS (ON)

Drain-Source on resistance

Capacitance C (pF)

– VGS

I

-10000
Common Source

VDS = -3 V

-1000

-100

-10

-0.1

-0.01

-0.001

Ta = 100°C

-1

-0.5

0 -1 -1.5 -2 -3

Gate-source voltage VGS (V)

D

25°C

-25°C

1

Common Source

ID = -0.3 A

0.8

0.6

0.4

0.2

0

-50

R

0

Ambient temperature Ta (°C)

– Ta

DS (ON)

VGS = -2.5 V

-4 V

50 100 150

C – V

DS

1000

300

C

100

30

10

3

1

-0.1

Common Source

VGS = 0 V

f = 1 MHz

Ta = 25°C

-1 -10 -100 -400

Drain-Source voltage VDS (V)

iss

C

oss

C

rss

-2.5

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SSM3J02T

f

10000

3000

1000

300

100

30

Switching time t (ns)

10

-0.001

t

of

tf

ton

tr

-0.01 -0.1 -1 -4

Drain current ID (A)

-10

ID max (pulsed)*

ID max (continuous)

-1

Safe operating area

(A)

D

-0.1

DC operation

Ta = 25°C

Drain current I

Mounted on FR4 board
(25.4 mm ´ 25.4 mm

-0.01

´ 1.6 t,
Cu Pad: 645 mm2)

*: Single nonrepetitive Pulse
Ta = 25°C
Curves must be derated

linearly with increase in

-0.001

temperature.

-0.1

Drain-Source voltage VDS (V)

1000

(°C /W)

th

100

10

Transient thermal impedance r

0.001

t – I

D

Common Source
VDD = -15 V
VGS = 0 to -2.5 V
RG = 4.7 W
Ta = 25°C

1 ms*

10 ms*

10 s

V

DSS

max

-1 -100

1

-10

(W)

D

Drain power dissipation P

– tw

r

th

Pulse width tw (s)

1.5

t = 10 s

1.25

1

0.75
DC

0.5

0.25

0

0

25 50 75 100 125 150

Single pulse

Mounted on FR4 board

(25.4 mm ´ 25.4 mm ´ 1.6 t,

Cu Pad: 645 mm2)

– Ta

P

D

Mounted on FR4 board

(25.4 mm ´ 25.4 mm ´ 1.6 t,

Cu Pad: 645 mm2)

Ambient temperature Ta (°C)

1000 0.01 0.1 1 10 100

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SSM3J02T

A

RESTRICTIONS ON PRODUCT USE

· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..

· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.

· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.

· The information contained herein is subject to change without notice.

000707EA

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