Toshiba SM2LZ47 Schematic [ru]
SM2LZ47
TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
SM2LZ47
AC POWER CONTROL APPLICATIONS
l Repetitive Peak Off−State Voltage : V
l R.M.S. On−State Current : I
= 800V
DRM
T (RMS)
= 2A
l High Commutation (dv / dt) : (dv / dt) c = 5V / µs (Min.)
l Isolation Voltage : V
= 1500V AC
ISOL
MAXIMUM RATINGS
CHARACTERISTIC SYMBOL RATING UNIT
Unit: mm
Repetitive Peak Off−State Voltage V
R.M.S. On−State Current
(Full Sine Waveform)
Peak One Cycle Surge On−State
Current (Non-Repetitive)
I2t Limit Value I2t 0.32 A2s
Critical Rate of Rise of On−State
Current (Note)
Peak Gate Power Dissipation PGM 3 W
Average Gate Power Dissipation P
Peak Gate Voltage V
Peak Gate Current IGM 1.6 A
Junction Temperature Tj −40~125 °C
Storage Temperature Range T
Isolation Voltage (AC, t = 1min.) V
800 V
DRM
I
2 A
T (RMS)
I
TSM
di / dt 50 A / µs
0.3 W
G (AV)
10 V
FGM
−40~125 °C
stg
1500 V
ISOL
8 (50Hz)
8.8 (60Hz)
A
JEDEC ―
JEITA ―
TOSHIBA 13−10H1A
Weight: 1.7g
Note: di / dt test condition
V
DRM
= 400V, I
TM
≤ 3A, t
≥ 10µs, t
gw
≤ 250ns, i
gr
gp
= I
GT
× 2.0
1
2001-07-10
SM2LZ47
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP. MAX UNIT
Repetitive Peak Off−State Current I
I T2 (+) , Gate (+) ― ― 1.5
Gate Trigger Voltage
Gate Trigger Current
Peak On−State Voltage VTM I
Gate Non−Trigger Voltage VGD VD = 800V, Tc = 125°C 0.2 ― ― V
Holding Current IH VD = 12V, I
Thermal Resistance R
Critical Rate of Rise of Off−State Voltage dv / dt
Critical Rate of Rise of Off−State Voltage
at Communication
II T2 (+) , Gate (−) ― ― 1.5
III
I T2 (+) , Gate (+) ― ― 10
II T2 (+) , Gate (−) ― ― 10
III
(Ta = 25°C)
V
DRM
VGT
IGT
th (j−a)
(dv / dt) c
Junction to Ambient, AC ― ― 58 °C / W
= 800V ― ― 20 µA
DRM
= 12V,
V
D
R
= 20Ω
L
T2 (−) , Gate (−) ― ― 1.5
= 12V,
V
D
R
= 20Ω
L
= 3A ― ― 2.0 V
TM
= 800V, Tj = 125°C
V
DRM
Exponential Rise
V
= 400V, Tj = 125°C
DRM
(di / dt) c = − 0.5A / ms
T2 (−) , Gate (−) ― ― 10
= 1A ― ― 10 mA
TM
― 500 ― V / µs
5 ― ― V / µs
MARKING
V
mA
NUMBER SYMBOL MARK
*1 Toshiba Product Mark
*2 TYPE SM2LZ47 M2LZ47
Example
*3
8A : January 1998
8B : February 1998
8L : December 1998
2
2001-07-10
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