TOSHIBA SM16GZ47, SM16JZ47, SM16GZ47A, SM16JZ47A Technical data
查询SM16GZ47供应商
SM16GZ47,SM16JZ47,SM16GZ47A,SM16JZ47A
TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
SM16GZ47,SM16JZ47,SM16GZ47A,SM16JZ47A
AC POWER CONTROL APPLICATIONS
l Repetitive Peak Off−State Voltage : V
l R.M.S On−State Current : I
l High Commutating (dv / dt)
l Isolation Voltage : V
MAXIMUM RATINGS
CHARACTERISTIC SYMBOL RATING UNIT
= 400, 600V
DRM
T (RMS)
= 1500V AC
ISOL
= 16A
Unit: mm
SM16GZ47
Repetitive Peak
Off−State Voltage
R.M.S On−State Current
(Full Sine Waveform Tc = 73°C)
Peak One Cycle Surge On−State
Current (Non−Repetitive)
I2t Limit Value I2t 112.5 A2s
Critical Rate of Rise of On−State
Current (Note 1)
Peak Gate Power Dissipation PGM 5 W
Average Gate Power Dissipation P
Peak Gate Voltage VGM 10 V
Peak Gate Current IGM 2 A
Junction Temperature Tj −40~125 °C
Storage Temperature Range T
Isolation Voltage (AC, t = 1 min.) V
SM16GZ47A
SM16JZ47
SM16JZ47A
V
DRM
I
16 A
T (RMS)
I
TSM
di / dt 50 A / µs
0.5 W
G (AV)
−40~125 °C
stg
1500 V
ISOL
400
600
150 (50Hz)
165 (60Hz)
V
A
JEDEC ―
JEITA ―
TOSHIBA 13−10H1A
Weight: 1.7g
Note 1: di / dt Test condition
V
= 0.5 × Rated
DRM
I
≤ 25A
TM
t
≥ 10µs
gw
t
≤ 250ns
gr
i
= I
GT
× 2.0
GP
1
2001-07-13
SM16GZ47,SM16JZ47,SM16GZ47A,SM16JZ47A
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP. MAX UNIT
Repetitive Peak Off−State Current I
I T2 (+) , Gate (+) ― ― 1.5
Gate Trigger Voltage
SM16GZ47
SM16JZ47
Gate Trigger
Current
SM16GZ47A
SM16JZ47A
Peak On−State Voltage VTM I
Gate Non−Trigger Voltage VGD VD = Rated, Tc = 125°C 0.2 ― ― V
Holding Current IH VD = 12V, I
Thermal Resistance R
SM16GZ47
Critical Rate of Rise of
Off−State Voltage
Critical Rate of Rise of
Off−State Voltage at
Commutation
SM16JZ47
SM16GZ47A
SM16JZ47A
SM16GZ47
SM16JZ47
SM16GZ47A
SM16JZ47A
II T2 (+) , Gate (−) ― ― 1.5
III T2 (−) , Gate (−) ― ― 1.5
IV
I T2 (+) , Gate (+) ― ― 30
II T2 (+) , Gate (−) ― ― 30
III T2 (−) , Gate (−) ― ― 30
IV T2 (−) , Gate (+) ― ― ―
I T2 (+) , Gate (+) ― ― 20
II T2 (+) , Gate (−) ― ― 20
III T2 (−) , Gate (−) ― ― 20
IV
(Ta = 25°C)
V
DRM
VGT
I
GT
Junction to Case, AC ― ― 2.5 °C / W
th (j−c)
dv / dt
(dv / dt) c
= Rated ― ― 20 µA
DRM
V
= 12V,
D
R
= 20Ω
L
T2 (−) , Gate (+) ― ― ―
= 12V,
V
D
R
= 20Ω
L
T2 (−) , Gate (+) ― ― ―
= 25A ― ― 1.5 V
TM
= 1A ― ― 50 mA
TM
V
= Rated, Tj = 125°C
DRM
Exponential Rise
V
= 400V, Tj = 125°C
DRM
(di / dt) c = − 8.7A / ms
― 300 ―
V / µs
― 200 ―
10 ― ―
4 ― ―
V / µs
MARKING
V
mA
* NUMBER SYMBOL MARK
* 1 Toshiba Product Mark
* 2
* 3
* 4
TYPE
SM16GZ47, SM16GZ47A M16GZ47
SM16JZ47, SM16JZ47A M16JZ47
SM16GZ47A, SM16JZ47A A
Example
8A : January 1998
8B : February 1998
8L : December 1998
2
2001-07-13
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