TOSHIBA SM10LZ47 Technical data
查询SM10LZ47供应商
TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
SM10LZ47
AC POWER CONTROL APPLICATIONS
l Repetitive Peak Off−State Voltage : V
l R.M.S. On−State Current : I
l High Commutation (dv / dt)
l Isolation Voltage : V
MAXIMUM RATINGS
CHARACTERISTIC SYMBOL RATING UNIT
= 800V
DRM
T (RMS)
= 1500V AC
ISOL
= 10A
SM10LZ47
Unit: mm
Repetitive Peak Off−State Voltage V
R.M.S On−State Current
(Full Sine Waveform)
Peak One Cycle Surge On−State
Current (Non−Repetitive)
I2t Limit Value I2t 50 A2s
Critical Rate of Rise of On−State
Current (Note)
Peak Gate Power Dissipation PGM 5 W
Average Gate Power Dissipation P
Peak Gate Voltage V
Peak Gate Current IGM 2 A
Junction Temperature Tj −40~125 °C
Storage Temperature Range T
Isolation Voltage (AC, t = 1min.) V
800 V
DRM
I
10 A
T (RMS)
I
TSM
di / dt 50 A / µs
G (AV)
FGM
−40~125 °C
stg
ISOL
100 (50Hz)
110 (60Hz)
0.5 W
10 V
1500 V
A
JEDEC ―
JEITA ―
TOSHIBA 13−10H1A
Weight: 1.7g
Note: di / dt test condition
V
= 0.5 × Rated, I
DRM
t
≤ 250ns, i
gr
gp
= I
GT
TM
× 2.0
≤ 15A, t
gw
≥ 10µs,
1
2001-07-10
SM10LZ47
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP. MAX UNIT
Repetitive Peak Off−State Current I
I T2 (+) , Gate (+) ― ― 1.5
Gate Trigger Voltage
Gate Trigger Current
Peak On−State Voltage VTM I
Gate Non−Trigger Voltage VGD VD = Rated, Tc = 125°C 0.2 ― ― V
Holding Current IH VD = 12V, I
Thermal Resistance R
Critical Rate of Rise of Off−State Voltage dv / dt
Critical Rate of Rise of Off−State Voltage
at Commutation
II T2 (+) , Gate (−) ― ― 1.5
III
I T2 (+) , Gate (+) ― ― 30
II T2 (+) , Gate (−) ― ― 30
III
(Ta = 25°C)
V
DRM
VGT
IGT
th (j−c)
(dv / dt) c
Junction to Case, AC ― ― 3.4 °C / W
= Rated ― ― 20 µA
DRM
= 12V,
V
D
R
= 20Ω
L
T2 (−) , Gate (−) ― ― 1.5
= 12V,
V
D
R
= 20Ω
L
= 15A ― ― 1.5 V
TM
= 600V, Tj = 125°C
V
DRM
Exponential Rise
V
= 400V, Tj = 125°C
DRM
(di / dt) c = − 5.5A / ms
T2 (−) , Gate (−) ― ― 30
= 1A ― ― 50 mA
TM
― 300 ― V / µs
10 ― ― V / µs
MARKING
V
mA
NUMBER SYMBOL MARK
*1 TOSHIBA PRODUCT MARK
*2 TYPE SM10LZ47 M10LZ47
Example
*3
8A: January 1998
8B: February 1998
8L: December 1998
2
2001-07-10
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