Toshiba RN4985 Schematic [ru]
RN4985
Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process)
TOSHIBA Transistor
RN4985
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
l Includeing two devices in US6 (ultra super mini type with 6 leads)
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
Equivalent Circuit and Bias Resister Values
R1: 2.2kΩ
R2: 47kΩ
(Q1, Q2 Common)
Q1 Maximum Ratings
(Ta = 25°°°°C)
Unit: mm
Characteristic Symbol Rating Unit
Collector-base voltage V
Collector-emitter voltage V
Emitter-base voltage V
Collector current IC 100 mA
Q2 Maximum Ratings
Characteristic Symbol Rating Unit
Collector-base voltage V
Collector-emitter voltage V
Emitter-base voltage V
Collector current IC −100 mA
(Ta = 25°°°°C)
50 V
CBO
50 V
CEO
5 V
EBO
−50 V
CBO
−50 V
CEO
−5 V
EBO
JEDEC ―
EIAJ ―
TOSHIBA 2-2J1A
Weight: 6.8mg
1
2001-06-07
RN4985
Q1, Q2 Common Maximum Ratings
Characteristic Symbol Rating Unit
Collector power dissipation P
Junction temperature Tj 150 °C
Storage temperature range T
* Total rating
(Ta = 25°°°°C)
* 200 mW
C
−55~150 °C
stg
Marking
Equivalent Circuit
(Top View)
2
2001-06-07
RN4985
Q1 Electrical Characteristics
Characteristic Symbol
Collector cut-off current
Emitter cut-off current I
DC current gain hFE ― V
Collector-emitter saturation voltage V
Input voltage (ON) V
Input voltage (OFF) V
Transition frequency
Collector output capacitance
(Ta = 25°C)
I
CBO
I
― V
CEO
― V
EBO
CE (sat)
― V
I (ON)
I (OFF)
f
T
C
ob
Test
Circuit
― V
― IC = 5mA, IB = 0.25mA ― 0.1 0.3 V
― V
―
―
Q2 Electrical Characteristics
Characteristic Symbol
Collector cut-off current
Emitter cut-off current I
DC current gain hFE ― V
Collector-emitter saturation voltage V
Input voltage (ON) V
Input voltage (OFF) V
Transition frequency
Collector output capacitance
(Ta = 25°C)
I
CBO
I
― V
CEO
― V
EBO
CE (sat)
― V
I (ON)
I (OFF)
f
T
C
ob
Test
Circuit
― V
― IC = −5mA, IB = −0.25mA ― −0.1 −0.3 V
― V
―
― V
Q1, Q2 Common Electrical Characteristics
Test Condition Min Typ. Max Unit
= 50V, IE = 0 ― ― 100
CB
= 50V, IB = 0 ― ― 500
CE
= 5V, IC = 0 0.078 ― 0.145 mA
EB
= 5V, IC = 10mA 80 ― ― ―
CE
= 0.2V, IC = 5mA 0.6 ― 1.1 V
CE
= 5V, IC = 0.1mA 0.5 ― 0.8 V
CE
V
= 10V, IC = 5mA
CE
V
= 10V, IE = 0, f = 1 MHz
CB
Test Condition Min Typ. Max Unit
= −50V, IE = 0 ― ― −100
CB
= −50V, IB = 0 ― ― −500
CE
= −5V, IC = 0 −0.078 ― −0.145 mA
EB
= −5V, IC = −10mA 80 ― ― ―
CE
= −0.2V, IC = −5mA −0.6 ― −1.1 V
CE
= −5V, IC = −0.1mA −0.5 ― −0.8 V
CE
V
= −10V, IC = −5mA
CE
= −10V, IE = 0 ― 3 6 pF
CB
(Ta = 25°C)
― 250 ― MHz
― 3 6 pF
― 200 ― MHz
nA
nA
Characteristic Symbol
Input resistor R1 ― ― 1.54 2.2 2.86 kΩ
Resistor ratio R1/R2 ― ― 0.0421 0.0468 0.0515 ―
Test
Circui
t
Test Condition Min Typ. Max Unit
3
2001-06-07
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