Toshiba RN47A4 Schematic [ru]
TOSHIBA Transistor Silicon NPN·PNP Epitaxial Type
(PCT process) (Bias Resistor built-in Transistor)
RN47A4
RN47A4
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
• Two devices are incorporated into an Ultra-Super-Mini (5 pin)
package.
• Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enables the manufacture of ever more
compact equipment and lowers assembly cost.
Unit: mm
Equivalent Circuit and Bias Resistor Values
Q1 Q2
C
B
Q1
R1: 47 kΩ, R2: 47 kΩ
Q2
R1: 10 kΩ, R2: 47 kΩ
Q1: RN1104F
Q2: RN2107F
R1
R2
B
E
R1
Marking Equivalent Circuit
C
R2
JEDEC ―
E
JEITA ―
TOSHIBA 2-2L1D
Weight: 0.0062g (typ.)
(top view)
4 5
2 4
3 1 2
1
5 4
Q1
123
Q2
2004-04-28
RN47A4
Maximum Ratings
Characteristics Symbol Rating Unit
Collector-base voltage V
Collector-emitter voltage V
Emitter-base voltage V
Collector current I
(Ta = 25°C) (Q1)
CBO
CEO
EBO
C
50 V
50 V
10 V
100 mA
Maximum Ratings
Characteristics Symbol Rating Unit
Collector-base voltage V
Collector-emitter voltage V
Emitter-base voltage V
Collector current I
(Ta = 25°C) (Q2)
CBO
CEO
EBO
C
−50 V
−50 V
6 V
−
100 mA
−
Maximum Ratings
Characteristics Symbol Rating Unit
Collector power dissipation PC (Note) 200 mW
Junction temperature Tj 150 °C
Storage temperature range T
(Ta = 25°C) (Q1, Q2 common)
stg
−
55~150 °C
Note: Total rating
2
2004-04-28
RN47A4
Electrical Characteristics
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current
Emitter cut-off current I
DC current gain h
Collector-emitter saturation voltage V
Input voltage (ON) V
Input voltage (OFF) V
Transition frequency f
Collector output capacitance C
Input resistor R1 ⎯ 32.9 47 61.1 kΩ
Resistor ratio R1/R2 ⎯ 0.8 1.0 1.2
(Ta = 25°C) (Q1)
I
CBO
I
CEO
EBO
FE
CE (sat)
I (ON)
I (OFF)
T
ob
VCB = 50 V, IE = 0 ⎯ ⎯ 100
VCE = 50 V, IB = 0 ⎯ ⎯ 500
VEB = 10 V, IC = 0 0.082 ⎯ 0.15 mA
VCE = 5 V, IC = 10 mA 80
IC = 5 mA, IB = 0.25 mA
VCE = 0.2 V, IC = 5 mA 1.5
VCE = 5 V, IC = 0.1 mA 1.0 ⎯ 1.5 V
VCE = 10 V, IC = 5 mA ⎯ 250 ⎯ MHz
VCB = 10 V, IE = 0, f = 1 MHz ⎯ 3 ⎯ pF
⎯ ⎯
0.1 0.3 V
⎯
5.0 V
⎯
Electrical Characteristics
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current
Emitter cut-off current I
DC current gain h
Collector-emitter saturation voltage V
Input voltage (ON) V
Input voltage (OFF) V
Transition frequency f
Collector output capacitance C
Input resistor R1 ⎯ 7 10 13 kΩ
Resistor ratio R1/R2 ⎯ 0.171 0.213 0.255
(Ta = 25°C) (Q2)
I
CBO
I
CEO
EBO
FE
CE (sat)
I (ON)
I (OFF)
T
ob
VCB = −50 V, IE = 0 ⎯ ⎯ −100
VCE = −50 V, IB = 0 ⎯ ⎯ −500
VEB = −6 V, IC = 0 −0.081 ⎯ −0.15 mA
VCE = −5 V, IC = −10 mA 80
IC = −5 mA, IB = −0.25 mA
VCE = −0.2 V, IC = −5 mA
VCE = −5 V, IC = −0.1 mA −0.5 ⎯ −1.0 V
VCE = −10 V, IC = −5 mA ⎯ 200 ⎯ MHz
VCB = −10 V, IE = 0, f = 1 MHz ⎯ 3 ⎯ pF
−
⎯ ⎯
0.1 −0.3 V
⎯ −
0.7
⎯ −
1.8 V
nA
nA
3
2004-04-28
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