Toshiba RN2427 Datasheet
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2421,RN2422,RN2423,RN2424
RN2425,RN2426,RN2427
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
l High current type (I
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Low V
CE (sat)
l Complementary to RN1421~RN1427
Equivalent Circuit and Bias Resistor Values
C(MAX)
= −800mA)
RN2421~RN2427
Unit: mm
Type No. R1 (kΩ)R2 (kΩ)
RN2421 1 1
RN2422 2.2 2.2
RN2423 4.7 4.7
RN2424 10 10
RN2425 0.47 10
RN2426 1 10
RN2427 2.2 10
Weight: 0.012 g (typ.)
Maximum Ratings
Collector-Base voltage V
Collector-Emitter voltage
Emitter-Base voltage
Collector current Ic −800 mA
Collector power dissipation P
Junction temperature Tj 150 °C
Storage temperature range
(Ta = 25°°°°C)
Characteristics Symbol Rating Unit
CBO
RN2421~2427
RN2421~2424 −10
RN2425, 2426 −5
RN2427
RN2421~2427
V
V
CEO
EBO
T
stg
c
−50 V
−50 V
−6
200 mW
−55~150 °C
V
JEDEC ―
JEITA SC-59
TOSHIBA 2-3F1A
1
2001-11-29
RN2421~RN2427
Electrical Characteristics
Characteristics Symbol
Collector cut-off current RN2421~2427
Emitter cut-off current
DC current gain
Collector-Emitter
saturation voltage
Input voltage (ON)
Input voltage (OFF)
Transition frequency RN2421~2427 fT ― V
Collector output
capacitance
Input resistor
Resistor ratio
RN2422~2427
RN2421~2424 ― −0.8 ― −1.3
RN2425, 2426 ― −0.4 ― −0.8
RN2421~2427 C
RN2421~2424 ― 0.9 1.0 1.1
(Ta = 25°°°°C)
RN2421 ― −3.85 ― −7.14
RN2422 ― −1.75 ― −3.25
RN2423 ― −0.82 ― −1.52
RN2424 ―
RN2425 ― −0.365 ― −0.682
RN2426 ―
RN2427
RN2421 ― 60 ― ―
RN2422 ― 65 ― ―
RN2423 ― 70 ― ―
RN2424 ― 90 ― ―
RN2425 ― 90 ― ―
RN2426 ― 90 ― ―
RN2427
RN2421 IC = −50mA, IB = −2mA
RN2421 ― −1.0 ― −3.5
RN2422 ― −1.4 ― −4.5
RN2423 ― −2.0 ― −6.5
RN2424 ― −3.0 ― −12.0
RN2425 ― −0.6 ― −2.0
RN2426 ― −0.7 ― −2.5
RN2427
RN2427
RN2421 ― 0.7 1.0 1.3
RN2422 ― 1.54 2.2 2.86
RN2423 ― 3.29 4.7 6.11
RN2424 ― 7 10 13
RN2425 ― 0.329 0.47 0.61
RN2426 ― 0.7 1.0 1.3
RN2427
RN2425 ― 0.0423 0.047 0.0517
RN2426 ― 0.09 0.1 0.11
RN2427
I
CBO
I
CEO
I
EBO
h
V
CE (sat)
V
I (ON)
V
I (OFF)
R1
R1/R2
FE
―
―
ob
Test
Circuit
― VCB = −50V, IE = 0 ― ― −100
― VCE = −50V, IB = 0 ― ― −500
― VEB = −6V, IC = 0 −0.378 ― −0.703
―
―
―
―
―
Test Condition Min Typ. Max Unit
= −10V, IC = 0
V
EB
−0.38 ― −0.71
V
= −5V, IC = 0
EB
V
= −1V,
CE
IC = −100mA
I
= −50mA, IB = −1mA
C
V
= −0.2V
CE
IC = −100mA
= −5V,
V
CE
= −0.1mA
I
C
= −5V, IC = −20mA ― 200 ― MHz
CE
= −10V, IE = 0
V
CB
f = 1MHz
―
―
−0.35 ― −0.65
90 ― ―
― ― −0.25 V
−1.0 ― −3.0
−0.5 ― −1.0
― 13 ― pF
1.54 2.2 2.86
0.2 0.22 0.24
nA
mA
V
V
kΩ
2
2001-11-29
A
Marking
Type No. Marking
RN2421~RN2427
Type name
RN2421
RN2422
RN2423
RN2424
R
R B
R C
R D
Type name
Type name
Type name
Type name
RN2425
RN2426
RN2427
R E
Type name
R F
Type name
R G
3
2001-11-29
Loading...