TOSHIBA GT10Q101 User Manual
y
查询GT10Q101供应商
GT10Q101
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
Preliminar
GT10Q101
High Power Switching Applications
• The 3
• Enhancement-Mode
• High Speed: t
• Low Saturation Voltage: V
Maximum Ratings
rd
Generation
= 0.32 µs (max)
f
CE (sat)
(Ta ==== 25°C)
Characteristic Symbol Rating Unit
Collector-emitter voltage V
Gate-emitter voltage V
Collector current
Collector power dissipation
(Tc = 25°C)
Junction temperature T
Storage temperature range T
DC IC 10
1 ms I
= 2.7 V (max)
CES
GES
CP
P
stg
±20 V
20
140 W
C
j
1200 V
A
150 °C
−55~150 °C
JEDEC ―
JEITA ―
TOSHIBA 2-16C1C
Unit: mm
Weight: 4.6 g (typ.)
1
2002-01-23
GT10Q101
Electrical Characteristics
Characteristic Symbol Test Condition Min Typ. Max Unit
Gate leakage current I
Collector cut-off current I
Gate-emitter cut-off voltage V
Collector-emitter saturation voltage V
Input capacitance C
Rise time tr
Turn-on time ton
Switching time
Fall time tf
Turn-off time t
Thermal resistance R
(Ta ==== 25°C)
V
GES
V
CES
GE (OFF)
I
CE (sat)
V
ies
off
th (j-c)
= ±20 V, VCE = 0 ±500 nA
GE
= 1200 V, VGE = 0 1.0 mA
CE
I
= 1 mA, VCE = 5 V 4.0 7.0 V
C
= 10 A, VGE = 15 V 2.1 2.7 V
C
= 50 V, VGE = 0, f = 1 MHz 600 pF
CE
Inductive Load
= 600 V, IC = 10 A
V
CC
= ±15 V, RG = 75 Ω
V
GG
Note1: Switching time measurement circuit and input/output waveforms
VGE
GT10Q301
−V
GE
RG
IC
L V
V
CE
CC
0
I
C
V
0
CE
10%
t
d (off)
90%
t
off
0.07
0.30
0.16 0.32
(Note1)
90%
tf
0.50
0.89 °C/W
10%
t
tr
d (on)
t
µs
90%
10% 10% 10%
on
Note2: Switching loss measurement waveforms
VGE
90%
0
I
C
V
CE
0
E
E
off
10%
10%
on
2
2002-01-23
Loading...