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查询GT10Q101供应商
GT10Q101
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
Preliminar
GT10Q101
High Power Switching Applications
• The 3
• Enhancement-Mode
• High Speed: t
• Low Saturation Voltage: V
Maximum Ratings
rd
Generation
= 0.32 µs (max)
f
CE (sat)
(Ta ==== 25°C)
Characteristic Symbol Rating Unit
Collector-emitter voltage V
Gate-emitter voltage V
Collector current
Collector power dissipation
(Tc = 25°C)
Junction temperature T
Storage temperature range T
DC IC 10
1 ms I
= 2.7 V (max)
CES
GES
CP
P
stg
±20 V
20
140 W
C
j
1200 V
A
150 °C
−55~150 °C
JEDEC ―
JEITA ―
TOSHIBA 2-16C1C
Unit: mm
Weight: 4.6 g (typ.)
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2002-01-23
GT10Q101
Electrical Characteristics
Characteristic Symbol Test Condition Min Typ. Max Unit
Gate leakage current I
Collector cut-off current I
Gate-emitter cut-off voltage V
Collector-emitter saturation voltage V
Input capacitance C
Rise time tr
Turn-on time ton
Switching time
Fall time tf
Turn-off time t
Thermal resistance R
(Ta ==== 25°C)
V
GES
V
CES
GE (OFF)
I
CE (sat)
V
ies
off
th (j-c)
= ±20 V, VCE = 0 ±500 nA
GE
= 1200 V, VGE = 0 1.0 mA
CE
I
= 1 mA, VCE = 5 V 4.0 7.0 V
C
= 10 A, VGE = 15 V 2.1 2.7 V
C
= 50 V, VGE = 0, f = 1 MHz 600 pF
CE
Inductive Load
= 600 V, IC = 10 A
V
CC
= ±15 V, RG = 75 Ω
V
GG
Note1: Switching time measurement circuit and input/output waveforms
VGE
GT10Q301
−V
GE
RG
IC
L V
V
CE
CC
0
I
C
V
0
CE
10%
t
d (off)
90%
t
off
0.07
0.30
0.16 0.32
(Note1)
90%
tf
0.50
0.89 °C/W
10%
t
tr
d (on)
t
µs
90%
10% 10% 10%
on
Note2: Switching loss measurement waveforms
VGE
90%
0
I
C
V
CE
0
E
E
off
10%
10%
on
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GT10Q101
20
16
(A)
C
12
8
Collector current I
4
0
0 1 2 3 4 5
Collector-emitter voltage VCE (V)
20
Common emitter
Tc = 25°C
16
(V)
CE
12
8
I
= 4 A
4
Collector-emitter voltage V
0
0 4 8 12 16 20
C
Gate-emitter voltage VGE (V)
20
Common emitter
V
= 5 V
CE
16
(A)
C
12
8
Collector current I
4
0
Tc = 125°C
0 4 8 12 16 20
Gate-emitter voltage VGE (V)
25
20
V
I
I
C
CE
C
– VCE
15
– VGE
10
– VGE
−40
13
V
= 10 V
GE
Common emitter
Tc = 25°C
20
12
– VGE
V
I
C
CE
20 10
= 4 A
20
Common emitter
Tc = −40°C
16
(V)
CE
12
8
4
Collector-emitter voltage V
0
0 4 8 12 16 20
Gate-emitter voltage VGE (V)
– VGE
V
= 4 A
C
CE
10
20 I
20
Common emitter
Tc = 125°C
16
(V)
CE
12
8
4
Collector-emitter voltage V
0
0 4 8 12 16 20
Gate-emitter voltage VGE (V)
CE (sat)
– Tc
I
C
20
10
= 4 A
4
V
Common emitter
V
= 15 V
GE
3
(V)
2
CE (sat)
V
1
Collector-emitter saturation voltage
0
−60 −20 20 60 100 140
Case temperature Tc (°C)
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GT10Q101
1
0.5
0.3
(µs)
r
, t
on
0.1
0.05
0.03
Switching time t
Switching time t
ton
tr
0.01
3 5 10 30 50
Gate resistance R
3
(µs)
f
1
, t
off
0.5
0.3
Switching time t
Common emitter
V
= 600 V
CC
V
= ±15 V
GG
I
= 10 A
C
: Tc = 25°C
: Tc = 125°C
t
off
Switching time t
0.1
0.05
tf
5 10 30 50 100 3 500
Gate resistance R
10
(mJ)
off
, E
on
0.5
0.3
Switching loss E
0.1
Switching loss E
Common emitter
V
= 600 V
CC
V
= ±15 V
GG
5
I
= 10 A
C
: Tc = 25°C
3
: Tc = 125°C
Note2
1
3 5 10 30 50
Gate resistance R
, tr – RG
on
Common emitter
V
= 600 V
CC
V
= ±15 V
GG
I
= 10 A
C
: Tc = 25°C
: Tc = 125°C
100 300 500
(Ω)
G
, tf – RG
off
(Ω)
G
, E
– RG
on
off
100 300 500
(Ω)
G
300
Eon
E
off
1
Switching time t
0.5
0.3
(µs)
r
, t
on
Switching time t
0.1
0.05
0.03
0.01
ton
tr
0
2 4
Collector current IC (A)
, tr – IC
on
Common emitter
V
= 600 V
CC
V
= ±15 V
GG
R
= 75 Ω
G
: Tc = 25°C
: Tc = 125°C
6 8 10 12
3
Switching time t
Common emitter
V
= 600 V
CC
V
= ±15 V
GG
R
= 75 Ω
G
: Tc = 25°C
1
(µs)
, t
Switching time t
: Tc = 125°C
f
off
t
0.5
off
0.3
tf
0.1
0.05
0 2 4 6 8 10
Collector current IC (A)
, tf – IC
off
12
, E
10
Switching loss E
Common emitter
V
= 600 V
CC
5
V
= ±15 V
GG
3
R
= 75 Ω
G
: Tc = 25°C
(mJ)
, E
Switching loss E
: Tc = 125°C
Note2
off
1
0.5
on
0.3
Eon
0.1
E
off
0.05
0.03
0.01
0 2 4 6 8 10 12
Collector current IC (A)
– IC
on
off
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GT10Q101
3000
1000
300
100
Capacitance C (pF)
30
Common emitter
V
= 0
GE
10
f = 1 MHz
Tc = 25°C
3
0.1 0.3 1 3 10 30 1000 100
Collector-emitter voltage VCE (V)
100
50
30
IC max (pulsed)*
IC max (continuous)
(A)
10
C
5
3
*: Single
nonrepetitive
1
pulse Tc = 25°C
0.5
Curves must be
Collector current I
dilated linearly with
0.3
increase in
temperature.
0.1
1 3 10
Safe operating area
DC
operation
Collector-emitter voltage VCE (V)
102
Tc = 25°C
101
100
1
−
(°C/W)
10
h (t)
t
2
−
R
10
Transient thermal resistance
3
−
10
4
−
10
5
4
−
−
10
10
−
10
Pulse width tw (s)
C – V
CE
100 µs* 50 µs*
1 ms*
30 100 300 3000 1000
– tw
R
th (t)
3
2
1
−
−
10
10
100 101 102
10 ms*
, VGE – QG
V
1000
Common emitter
R
= 60 Ω
C
ies
L
800
(V)
Tc = 25°C
CE
600
CE
600 400
20
16
(V)
GE
12
C
oes
C
res
Collector-emitter voltage V
400
200
V
= 200 V
CE
0
0
20 40 60 80 100
Gate charge QG (nC)
8
4
Gate-emitter voltage V
0
Reverse bias SOA
50
30
(A)
10
C
5
3
1
Collector current I
0.5
T
125°C
=
j
0.3
V
= ±15 V
GE
R
= 75 Ω
G
0.1
1 3 10 30 100 300 3000 1000
Collector-emitter voltage VCE (V)
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2002-01-23
GT10Q101
A
RESTRICTIONS ON PRODUCT USE
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
• The information contained herein is subject to change without notice.
000707EA
6
2002-01-23
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