TOSHIBA CT60J322 Technical data
查询GT60J322供应商
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT60J322
GT60J322
The 4th Generation
Soft Switching Applications
• Enhancement-mode
• Low saturation voltage: V
CE (sat)
Maximum Ratings
(Ta ==== 25°C)
Characteristics Symbol Rating Unit
Collector-emitter voltage V
Gate-emitter voltage V
Collector current
Emitter-collector forward
current
Collector power dissipation
(Tc = 25°C)
Junction temperature T
Storage temperature range T
Screw torque
DC IC 60
1 ms I
DC I
1 ms I
Equivalent Circuit
= 1.25 V (typ.) (IC = 60 A)
CES
±25 V
GES
120
CP
60
ECF
120
ECPF
P
200 W
C
j
stg
600 V
150 °C
−55~150 °C
0.8 N･m
Unit: mm
A
A
JEDEC ―
JEITA ―
TOSHIBA 2-21F2C
Weight: 9.75 g (typ.)
Collector
Gate
Emitter
1
2002-01-18
GT60J322
Electrical Characteristics
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate leakage current I
Collector cut-off current I
Gate-emitter cut-off voltage V
Collector-emitter saturation voltage
Input capacitance C
Rise time tr
Turn-on time ton
Switching time
Fall time tf
Turn-off time t
Forward voltage VF I
Reverse recovery time trr I
Thermal resistance (IGBT) R
Thermal resistance (Diode) R
(Ta ==== 25°C)
V
GES
V
CES
GE (OFF)
V
V
(1) I
CE (sat)
(2) I
CE (sat)
V
ies
off
th (j-c)
th (j-c)
I
= ±25 V, VCE = 0 ±500 nA
GE
= 600 V, VGE = 0 1.0 mA
CE
= 60 mA, VCE = 5 V 3.0 6.0 V
C
= 10 A, VGE = 15 V 0.95 1.45
C
= 60 A, VGE = 15 V 1.25 1.65
C
= 10 V, VGE = 0, f = 1 MHz 13500 pF
CE
15 V
0
−15 V
= 60 A, VGE = 0
F
= 60 A, VGE = 0, di/dt = −100 A/µs
F
18 Ω
300 V
5 Ω
0.25
0.35
1.00 1.50
1.50
1.2 1.6 V
0.6 1.0 µs
0.625 °C/W
0.96 °C/W
V
µs
2
2002-01-18
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