查询GT60J322供应商
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT60J322
GT60J322
The 4th Generation
Soft Switching Applications
• Enhancement-mode
• Low saturation voltage: V
CE (sat)
Maximum Ratings
(Ta ==== 25°C)
Characteristics Symbol Rating Unit
Collector-emitter voltage V
Gate-emitter voltage V
Collector current
Emitter-collector forward
current
Collector power dissipation
(Tc = 25°C)
Junction temperature T
Storage temperature range T
Screw torque
DC IC 60
1 ms I
DC I
1 ms I
Equivalent Circuit
= 1.25 V (typ.) (IC = 60 A)
CES
±25 V
GES
120
CP
60
ECF
120
ECPF
P
200 W
C
j
stg
600 V
150 °C
−55~150 °C
0.8 N･m
Unit: mm
A
A
JEDEC ―
JEITA ―
TOSHIBA 2-21F2C
Weight: 9.75 g (typ.)
Collector
Gate
Emitter
1
2002-01-18
GT60J322
Electrical Characteristics
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate leakage current I
Collector cut-off current I
Gate-emitter cut-off voltage V
Collector-emitter saturation voltage
Input capacitance C
Rise time tr
Turn-on time ton
Switching time
Fall time tf
Turn-off time t
Forward voltage VF I
Reverse recovery time trr I
Thermal resistance (IGBT) R
Thermal resistance (Diode) R
(Ta ==== 25°C)
V
GES
V
CES
GE (OFF)
V
V
(1) I
CE (sat)
(2) I
CE (sat)
V
ies
off
th (j-c)
th (j-c)
I
= ±25 V, VCE = 0 ±500 nA
GE
= 600 V, VGE = 0 1.0 mA
CE
= 60 mA, VCE = 5 V 3.0 6.0 V
C
= 10 A, VGE = 15 V 0.95 1.45
C
= 60 A, VGE = 15 V 1.25 1.65
C
= 10 V, VGE = 0, f = 1 MHz 13500 pF
CE
15 V
0
−15 V
= 60 A, VGE = 0
F
= 60 A, VGE = 0, di/dt = −100 A/µs
F
18 Ω
300 V
5 Ω
0.25
0.35
1.00 1.50
1.50
1.2 1.6 V
0.6 1.0 µs
0.625 °C/W
0.96 °C/W
V
µs
2
2002-01-18
GT60J322
100
(A)
C
Collector current I
Common emitter
Tc = 25°C
80
60
40
20
0
0 0.4 0.8 1.2 1.6
Collector-emitter voltage VCE (V)
10
8
(V)
CE
6
4
30
2
Collector-emitter voltage V
I
= 10 A
C
0
0 4 8 12 16
Gate-emitter voltage VGE (V)
100
80
(A)
C
Tc = 125°C
60
40
25
Collector current I
20
−40
0
0 4 8 12 16
Gate-emitter voltage VGE (V)
I
V
60
I
– VCE
C
15
– VGE
CE
120
– VGE
C
20
V
= 8 V
GE
10
Common emitter
Tc = 25°C
Common emitter
V
= 5 V
CE
2.0
20
20
– VGE
V
10
8
(V)
CE
6
Collector-emitter voltage V
I
= 10 A
C
4
30
2
0
0 4 8 12 16
Gate-emitter voltage VGE (V)
CE
Common emitter
Tc = −40°C
60
120
20
– VGE
V
120
CE
Common emitter
Tc = 125°C
60
20
10
8
(V)
CE
6
4
30
2
Collector-emitter voltage V
I
= 10 A
C
0
0 4 8 12 16
Gate-emitter voltage VGE (V)
CE (sat)
– Tc
I
= 10 A
C
120
60
30
3
V
Common emitter
V
= 15 V
GE
2
(V)
CE (sat)
V
1
Collector-emitter saturation voltage
0
−40 0 40 80 120 160
Case temperature Tc (°C)
3
2002-01-18
GT60J322
20
Common emitter
R
= 5 Ω
L
16
(V)
(×25 V)
GE
CE
Tc = 25°C
12
8
Collector-emitter voltage V
4
Gate-emitter voltage V
0
0 100 200 300 400
Gate charge QG (nC)
, VGE – QG
V
CE
50000
30000
10000
5000
3000
1000
500
300
Capacitance C (pF)
500
Common emitter
V
= 0
GE
f = 1 MHz
100
Tc = 25°C
50
1 3 10
Collector-emitter voltage VCE (V)
5
3
Switching time – R
t
1
0.5
0.3
Switching time (µs)
ton
0.1
3 5 10
off
tf
tr
Gate resistance R
3
Switching time – I
1
G
Common emitter
V
= 300 V
CC
V
= ±15 V
GG
I
= 60 A
C
Tc = 25°C
30 50 100 300
(Ω)
G
C
t
off
tf
Safe operating area
300
IC max (pulsed)
100
IC max (continuous)
50
30
(A)
Collector current I
DC operation
C
10
5
3
1
*: Single nonrepetitive
pulse
0.5
Tc = 25°C
0.3
Curves must be derated
linearly with increase in
temperature.
0.1
3
1 10 30 100 300 1000
Collector-emitter voltage VCE (V)
0.5
0.3
Switching time (µs)
0.1
0.05
0 40 60 80
20
Common emitter
V
= 300 V RG = 18 Ω
CC
V
= ±15 V Tc = 25°C
GG
Collector current IC (A)
ton
tr
CE
C
ies
C
oes
C
res
C – V
30 100 300 1000 3000
10 µs*
10 ms*
1 ms*
100 µs*
4
2002-01-18
GT60J322
300
100
(A)
50
C
30
10
5
T
Collector current I
=
j
3
V
GE
R
= 18 Ω
G
1
1 10 3
Reverse bias SOA
125°C
= ±15 V
Collector-emitter voltage VCE (V)
100
(A)
F
Forward current I
Common collector
V
GE
80
60
40
20
= 0
Tc = 125°C
0
Forward voltage VF (V)
3000
1000
500
(pF)
j
300
100
50
30
Junction capacitance C
10
0 3 10
5 30 100 50 300 500
Reverse voltage VR (V)
25
102
Tc = 25°C
101
Transient thermal impedance
(°C/W)
th (t)
r
100
1
−
10
2
−
10
3
−
10
4
3
−
10
−
10
Pulse width tw (s)
10
100 30 1000 3000
− V
I
F
F
−40
2.0 0 0.4 0.8 1.2 1.6
100
(A)
50
rr
trr
30
Irr
10
5
Peak reverse recovery current I
3
0 10 20 30 40 60
Forward current IF (A)
− V
C
j
R
f = 1 MHz
Tc = 25°C
1000
(ns)
rr
500
Reverse recovery time t
100
(A)
80
rr
60
40
20
Peak reverse recovery current I
0
0
0 40 80 120 160 240 200
2
−
10
I
– tw
r
th (t)
1
−
100 101 102
, − IF
rr trr
Common collector
di/dt = −100 A/µs
V
GE
Tc = 25°C
, trr – di/dt
I
rr
di/dt (A/µs)
Diode
IGBT
= 0
50
Common collector
I
= 60 A
F
Tc = 25°C
1000
500
(ns)
rr
300
10
Reverse recovery time t
50
30
Irr
trr
5
2002-01-18
GT60J322
A
RESTRICTIONS ON PRODUCT USE
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
• The information contained herein is subject to change without notice.
000707EA
6
2002-01-18
Loading...