Toshiba 2SC1815L DIAGRAMS
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC1815(L)
2SC1815(L)
Audio Frequency Voltage Amplifier Applications
Low Noise Amplifier Applications
· High breakdown voltage, high current capability
: V
· Excellent linearity of hFE
: h
: h
· Low noise: NF = 0.2dB (typ.) (f = 1 kHz).
· Complementary to 2SA1015 (L). (O, Y, GR class).
Maximum Ratings
Characteristics Symbol Rating Unit
Collector-base voltage V
Collector-emitter voltage V
Emitter-base voltage V
Collector current IC 150 mA
Base current IB 50 mA
Collector power dissipation PC 400 mW
Junction temperature T
Storage temperature range T
Electrical Characteristics
= 50 V (min), IC = 150 mA (max)
CEO
= 100 (typ.) at VCE = 6 V, IC = 150 mA
FE (2)
(IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)
FE
(Ta ==== 25°C)
60 V
CBO
50 V
CEO
5 V
EBO
j
stg
(Ta ==== 25°C)
125 °C
-55~125 °C
Unit: mm
JEDEC TO-92
JEITA SC-43
TOSHIBA 2-5F1B
Weight: 0.21 g (typ.)
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current I
Emitter cut-off current I
DC current gain
Saturation voltage
Transition frequency fT VCE = 10 V, IC = 1 mA 80 ¾ ¾ MHz
Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz ¾ 2.0 3.5 pF
Base intrinsic resistance r
Noise figure
Note: h
FE (1)
Collector-emitter V
Base-emitter V
classification O: 70~140, Y: 120~240, GR: 200~400, BL: 350~700
VCB = 60 V, IE = 0 ¾ ¾ 0.1 mA
CBO
VEB = 5 V, IC = 0 ¾ ¾ 0.1 mA
EBO
h
FE (1)
(Note)
h
VCE = 6 V, IC = 150 mA 25 100 ¾
FE (2)
IC = 100 mA, IB = 10 mA ¾ 0.1 0.25
CE (sat)
IC = 100 mA, IB = 10 mA ¾ ¾ 1.0
BE (sat)
VCE = 10 V, IE = -1 mA, f = 30 MHz ¾ 50 ¾ W
bb’
NF (1)
NF (2)
= 6 V, IC = 2 mA 70 ¾ 700
V
CE
V
= 6 V, IC = 0.1 mA
CE
= 10 kW, f = 100 Hz
R
G
V
= 6 V, IC = 0.1 mA
CE
= 10 kW, f = 1 kHz
R
G
¾ 0.5 6
¾ 0.2 3
1
2003-03-27
V
dB
2SC1815(L)
2
2003-03-27
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