Toshiba 2SA1013 Schematic [ru]

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

2SA1013

2SA1013

Color TV Verttical Deflection Output Applications

Power Switching Applications

• High voltage: V

• Large continuous collector current capability

• Recommended for vertical deflection output & sound output

applications for line-operated TV.

• Complementary to 2SC2383.

Maximum Ratings

Characteristics Symbol Rating Unit

Collector-base voltage V

Collector-emitter voltage V

Emitter-base voltage V

Collector current IC −1 A

Base current IB −0.5 A

Collector power dissipation PC 900 mW

Junction temperature Tj 150 °C

Storage temperature range T

Electrical Characteristics

CEO

= −160 V

(Ta = 25°C)

(Ta = 25°C)

CBO

CEO

−6 V

EBO

stg

160 V

−

160 V

−

55 to 150 °C

−

Unit: mm

JEDEC TO-92MOD

JEITA ―

TOSHIBA 2-5J1A

Weight: 0.36 g (typ.)

Characteristics Symbol Test Condition Min Typ. Max Unit

Collector cut-off current I

Emitter cut-off current I

Collector-emitter breakdown voltage V

DC current gain h

Collector-emitter saturation voltage V

Base-emitter voltage VBE VCE = −5 V, IC = −5 mA −0.45 ⎯ −0.75 V

Transition frequency fT VCE = −5 V, IC = −200 mA 15 50 ⎯ MHz

Collector output capacitance Cob VCB = −10 V, IE = 0, f = 1 MHz ⎯ ⎯ 35 pF

Note: h

classification R: 60 to 120, O: 100 to 200

FE

VCB = −150 V, IE = 0 ⎯ ⎯ −1.0 µA

CBO

VEB = −6 V, IC = 0 ⎯ ⎯ −1.0 µA

EBO

(BR) CEOIC

(Note) VCE = −5 V, IC = −200 mA 60

FE

CE (sat)

= −10 mA, IB = 0

IC = −500 mA, IB = −50 mA

−

160

⎯

⎯

200

⎯

⎯ −

⎯

1.5 V

V

Marking

A1013

Characteristics

indicator

Part No. (or abbreviation code)

Lot No.

A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.

1

2004-07-07

2SA1013

−12

I

C

– VCE

10

−

8

−

−6

−4.5

3

−

−2

IB = −1 mA

0

Common emitter

Ta = 25°C

−28

300

100

FE

50

DC current gain h

30

10

Common emitter

Ta = 25°C

5

−10

−30 −100 −300 −1000

Collector current IC (A)

−1.0

15

−

−0.8

(A)

C

−0.6

−0.4

Collector current I

0.2

−

0

0

−4 −8 −12 −16 −20 −24

Collector-emitter voltage VCE (V)

300

FE

100

Ta = 100°C

25

0

50

30

h

– IC

FE

DC current gain h

10

Common emitter

5

−10

VCE = −10 V
VCE = −5 V

−30 −100 −300 − 1000

Collector current IC (mA)

Collector-emitter saturation voltag e

VCE (sat) (V)

−0.05

−0.03

−3

Common emitter

Ta = 25°C

−1

−0.5

−0.3

−0.1

IC/IB = 10

5

−5

−10 −30 −100 −300 −1000

Collector current IC (A)

−3

Common emitter

IC/IB = 10

−1

−0.5

(V)

−0.3

CE (sat)

V

Collector-emitter saturation voltage

−0.05

−0.03

Ta = 100°C

−0.1

25

−5

0

−10 −30 −100 −300 −1000

Collector current IC (A)

V

CE (sat)

– IC

−1.0

−0.8

−0.6

(A)

C

−0.4

−0.2

Collector current I

−0
0

Ta = 100°C

−0.2 −0.4 −0.6 −0.8 −1.0 −1.4

Base-emitter voltage VBE (V)

h

V

CE (sat)

I

C

– IC

FE

– VBE

25

– I

0

VCE = −2 V

C

5

−

Common emitter

VCE = −5 V

−1.2

−10

2

2004-07-07