
XBS104S13R-G
Schottky Barrier Diode, 1A, 40V Type
■FEATURES
Forward Voltage
Forward Current
Repetitive Peak Reverse Voltage : V
Environmentally Friendly : EU RoHS Compliant, Pb Free
■
Ta=25℃
BSOLUTE MAXIMUM RATINGS
Repetitive Peak Reverse Voltage VRM 40 V
Reverse Voltage (DC) VR 40 V
Forward Current (Average) IF(AV) 1 A
Non Continuous
Forward Surge Current
Junction Temperature Tj 125
Storage Temperature Range T stg
*1:Non continuous high amplitude 60Hz half-sine wave.
■MARKING RULE
PARAMETER SYMBOL RATINGS UNIT
: VF=0.49V (TYP.)
: I
F(AV)
RM
*1
=1A
=40V
I
FSM 10 A
℃
-55~+150 ℃
ETR1608-003
■APPLICATIONS
●Rectification
●Protection against reverse connection of battery
■PACKAGING INFORMATION
Cathode Bar
①: 1 (Product Number)
②
①
■PRODUCT NAME
PRODUCT NAME DEVICE ORIENTATION
XBS104S13R-G SOD-323A (Halogen & Antimony free)
XBS104S13R SOD-323A
* The “-G” suffix indicates that the products are Halogen and Antimony free as well as being fully RoHS compliant.
* The device orientation is fixed in its embossed tape pocket.
■ELECTRICAL CHARACTERISTICS
Ta=25℃
*2:trr measurement circuit
PARAMETER SYMBOL TEST CONDITIONS
Forward Voltage
Reverse Current IR VR=40V - 4 200
Inter-Terminal Capacity Ct VR=10V , f=1MHz - 35 - pF
Reverse Recovery Time *2 trr
Pulse Generatri
②: Assembly Lot Number
Unit : mm
SOD-323A
LIMITS
MIN. TYP. MAX.
VF1 IF=100mA - 0.34 - V
V
F2 I
=1A - 0.49 0.54 V
F
I
=10mA , irr=1mA , RL=100Ω
F=IR
Bias
バイアス
Device Under Test
A
被測定ダイオード
Oscilloscope
オシロスコープパルス発生器
I
F
0
irr
- 25 - ns
trr
t
UNIT
μA
I
R
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XBS104S13R-G
■TYPICAL PERFORMANCE CHARACTERISTICS
(1) Forward Current vs. Forward Voltage (2) Reverse Current vs. Reverse Voltage
1
10000
Ta=125℃
1000
Forward Current: IF (A)
(A)
F
0.1
Ta=125℃
0.01
25℃75℃
-20℃
Forward Current I
0.001
0 0.2 0 .4 0.6
Forward Voltage: VF (V) Reverse Voltage: VR (V)
Forward Voltage V
F
(V)
Reverse Current: IR (μA) Reverse Current: IR (μA)
(uA)
R
100
75℃
10
25℃
Reverse Current I
1
0.1
0 10203040
Reverse Voltage V
R
(V)
(3) Forward Voltage vs. Operating Temperature (4) Reverse Current vs. Operating Temperature
0.6
(V)
F
0.4
IF=1A
10000
1000
(uA)
R
VR=40V 20V
100
0.5A
5V
0.2
Forward Voltage V
Forward Voltage: VF (V)
0.0
-50 0 50 100 150
Operating Temperature: Ta (℃) Operating Temperature: Ta (℃)
Operating Temperature Ta (℃)
0.1A
0.01
Reverse Current I
1
0.1
0 50 100 150
Operating Temperature Ta (℃)
(5) Inter-Terminal Capacity vs. Reverse Voltage (6) Average Forward Current vs. Operating Temperature
10
200
150
100
50
Inter-Terminal Capacity Ct (pF)
Inter-Terminal Capacity: Ct (pF)
Ta=25℃
0
0 10203040
2.0
(A)
AV
1.5
1.0
0.5
Average Forward Current IF
Average Forward Current: IFAV (A)
0.0
0 50 100 150
Operating Temperature Ta (℃)
Reverse Voltage V
R
(V)
Operating Temperature: Ta (℃) Reverse Voltage: VR (V)
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XBS104S13R-G
1. The products and product specifications contained he rein are subject to change without
notice to improve performance characteristics. Consult us, or our representatives
before use, to confirm that the information in this datasheet is up to date.
2. We assume no responsibility for any infringement of patents, patent rights, or other
rights arising from the use of any information and circuitry in this datasheet.
3. Please ensure suitable shipping controls (including fail-safe designs and aging
protection) are in force for equipment employing products listed in this datasheet.
4. The products in this datasheet are not developed, designed, or approved for use with
such equipment whose failure of malfunction can be reasonably expected to directly
endanger the life of, or cause significant injury to, the user.
(e.g. Atomic energy; aerospace; transport; combustion and associated safety
equipment thereof.)
5. Please use the products listed in this datasheet within the specified ranges.
Should you wish to use the products under conditions exceeding the specifications,
please consult us or our representatives.
6. We assume no responsibility for damage or loss due to abnormal use.
7. All rights reserved. No part of this datasheet may be copied or reproduced without the
prior permission of TOREX SEMICONDUCTOR LTD.
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