A
y
r
A
XBS024S15R-G
Schottky Barrier Diode, 200mA, 40V Type
■FEATURES
Forward Voltage
Forward Current
Repetitive Peak Reverse Voltage : V
Environmentally Friendly
■
Ta=25℃
BSOLUTE MAXIMUM RATINGS
Repetitive Peak Voltage VRM 40 V
Reverse Voltage (DC) VR 40 V
Forward Current (Average) IF(AV) 200 mA
Non Continuous
Forward Surge Current
Junction Temperature Tj 125
Storage Temperature Range Tstg
*1：Non continuous high amplitude 60Hz half-sine wave.
■MARKING RULE
PARMETER SYMBOL RATINGS UNIT
: VF=0.53V (TYP.)
*1
: I
=200mA
F(AV)
=40V
RM
: EU RoHS Compliant, Pb Free
FSM 1 A
I
-55～+150 ℃
℃
ETR1605-003
■APPLICATIONS
●Low Current Rectification
■PACKAGING INFORMATION
Cathode Bar
①: 1 (Product Number)
②
①
■PRODUCT NAME
PRODUCT NAME DEVICE ORIENTATION
XBS024S15R SOD-523
XBS024S15R-G SOD-523(Halogen & Antimony free)
* The “-G” suffix indicates that the products are Halogen and Antimony free as well as being fully RoHS compliant.
* The device orientation is fixed in its embossed tape pocket.
■ELECTRICAL CHARACTERISTICS
Ta=25℃
PARAMETER SYMBOL TEST CONDITIONS
Forward Voltage
Reverse Current IR VR=40V - - 2
Inter-Terminal Capacity Ct VR=10V , f=1MHz - 5 - pF
Reverse Recovery Time* trr IF=IR=10mA , irr=1mA - 4 - ns
* : trr measurement circuit
Pulse Generatrix
②: Assembl
VF1 IF=10mA - 0.33 - V
V
F2 I
Bias
Lot Numbe
=200mA - 0.53 0.6 V
F
Devise Under Test
Oscilloscope
I
F
0
irr
SOD-523
MIN. TYP. MAX.
trr
Unit : mm
LIMITS
UNIT
μA
t
I
R
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XBS024S15R-G
■TYPICAL PERFORMANCE CHARACTERISTICS
(1) Forward Current vs. Forward Voltage (2) Reverse Current vs. Reverse Voltage
(μA)
R
1000
(mA)
R
Ta=125℃
100
75℃
10
1000
(mA)
F
100
10
Ta=125℃
-25℃
25℃75℃
1
R
25℃
(V)
Forward Current: IF (mA)
Forward Current I
1
0.1
0 0.2 0.4 0.6
Forward Voltage: VF (V)
Forward Voltage V
F
(V)
Reverse Current : IR (mA)
Reverse Current I
Reverse Current : I
0.1
0.01
0 10203040
Reverse Voltage: VR (V)
Reverse Voltage V
(3) Forward Voltage vs. Operating Temperature (4) Reverse Current vs. Operating Temperature
0.6
IF=200mA
1000
100
(V)
F
0.4
100mA
(uA)
R
10
VR=40V
20V
5V
10mA
1
0.2
Forward Voltage V
Forward Voltage: VF (V)
0.0
-50 0 50 100 150
Operating Temperature: Ta (℃)
Operating Temperature Ta (℃)
Reverse Current I
0.1
Reverse Current : IR (μA)
0.01
0 50 100 150
Operating Temperature: Ta (℃)
Operating Temperature Ta (℃)
(5) Inter-Terminal Capacity vs. Reverse Voltage (6) Average Forward Current vs. Operating Temperature
Average Forward Current: IFAV (mA)
500
(mA)
400
AV
300
200
100
Average Forward Current IF
0
0 50 100 150
50
40
30
20
10
Inter-Terminal Capacity Ct (pF)
Inter-Terminal Capacity: Ct (pF)
Ta=25℃
0
0 10203040
Reverse Voltage: VR (V)
Reverse Voltage V
R
(V)
Operating Temperature Ta (℃)
Operating Temperature: Ta (℃)
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XBS024S15R-G
1. The products and product specifications contained he rein are subject to change without
notice to improve performance characteristics. Consult us, or our representatives
before use, to confirm that the information in this datasheet is up to date.
2. We assume no responsibility for any infringement of patents, patent rights, or other
rights arising from the use of any information and circuitry in this datasheet.
3. Please ensure suitable shipping controls (including fail-safe designs and aging
protection) are in force for equipment employing products listed in this datasheet.
4. The products in this datasheet are not developed, designed, or approved for use with
such equipment whose failure of malfunction can be reasonably expected to directly
endanger the life of, or cause significant injury to, the user.
(e.g. Atomic energy; aerospace; transport; combustion and associated safety
equipment thereof.)
5. Please use the products listed in this datasheet within the specified ranges.
Should you wish to use the products under conditions exceeding the specifications,
please consult us or our representatives.
6. We assume no responsibility for damage or loss due to abnormal use.
7. All rights reserved. No part of this datasheet may be copied or reproduced without the
prior permission of TOREX SEMICONDUCTOR LTD.
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