A
y
r
XBS013S16R-G
Schottky Barrier Diode, 100mA, 30V Type
■FEATURES
Forward Voltage
Forward Current
Repetitive Peak Reverse Voltage
Environmentally Friendly
■
Ta=25℃
BSOLUTE MAXIMUM RATINGS
Repetitive Peak Voltage VRM 30 V
Reverse Voltage(DC) VR 30 V
Forward Current(Average) IF(AV) 100 mA
Non Continuous
Forward Surge Current
Junction Temperature Tj 125
Storage Temperature Range Tstg
*1：Non continuous high amplitude 60Hz half-sine wave.
■MARKING RULE
PARAMETER SYMBOL RATINGS UNIT
*1
: VF=0.71V (TYP.)
=100mA
: I
F(AV)
=30V
: V
RM
: EU RoHS Compliant, Pb Free
FSM 0.6 A
I
℃
-55～+150 ℃
ETR1604-003
■APPLICATIONS
●Low Current Rectification
■PACKAGING INFORMATION
Cathode Bar
①: 0 (Product Number)
②: Assembl
■PRODUCT NAME
PRODUCT NAME DESCRIPTION
XBS013S16R SOD-723
XBS013S16R-G SOD-523 (Halogen & Antimony free)
* The “-G” suffix indicates that the products are Halogen and Antimony free as well as being fully RoHS compliant.
* The device orientation is fixed in its embossed tape pocket.
■ELECTRICAL CHARACTERISTICS
PARAMETER SYMBOL TEST CONDITIONS
Forward Voltage
Reverse Current IR VR=25V - - 2
Inter-Terminal Capacity Ct VR=0V , f=1MHz - 6 - pF
Reverse Recovery Time*2 trr IF=IR=10mA , irr=1mA - 2 - ns
*2：trr measurement circuit
Pulse Generatrix
Bias
VF1 IF=1mA - 0.31 - V
V
Lot Numbe
F2
I
F
Device Under Test
=100ｍA
SOD-723
MIN. TYP. MAX.
- 0.71 1 V
Oscilloscope
Unit : mm
LIMITS
Ta=25℃
UNIT
μA
1/3
XBS013S16R-G
■TYPICAL PERFORMANCE CHARACTERISTICS
(1) Forward Current vs. Forward Voltage (2) Reverse Current vs. Reverse Voltage
100
(mA)
F
10
Ta=125℃
-25℃
25℃75℃
1000
(uA)
R
100
10
Ta=125℃
75℃
1
1
R
25℃
(V)
Forward Current : IF (mA)
Forward Current I
0.1
0 0.2 0.4 0.6 0.8
Forward Voltage : VF (V)
Forward Voltage V
F
(V)
Reverse Current : IR (uA)
Reverse Current I
0.1
0.01
0102030
Reverse Voltage : VR (V)
Reverse Voltage V
(3) Forward Voltage vs. Operating Temperature (4) Reverse Current vs. Operating Temperature
0.8
IF=100mA
0.6
(V)
F
(uA)
R
1000
100
10
0.4
10mA
1
VR=25V
15V
5V
0.2
Forward Voltage V
Forward Voltage : VF (V)
0.0
-50 0 50 100 150
Operating Temperature : Ta (℃)
Operating Temperature Ta (℃)
1mA
Reverse Current I
Reverse Current : IR (uA)
0.1
0.01
0 50 100 150
Operating Temperature : Ta (℃)
Operating Temperature Ta (℃)
(5) Inter-Terminal Capacity vs. Reverse Voltage (6) Average Forward Current vs. Operating Temperature
Average Forward Current : IFAV (mA)
250
(mA)
200
AV
150
100
50
Average Forward Current IF
0
0 50 100 150
50
40
30
20
10
Inter-Terminal Capacity Ct (pF)
Inter-Terminal Capacity : Ct (pF)
Ta=25℃
0
0102030
2/3
Reverse Voltage : VR (V)
Rever se Volt age V
R
(V)
Operating Temperature Ta (℃)
Operating Temperature : Ta (℃)
XBS013S16R-G
1. The products and product specifications contained he rein are subject to change without
notice to improve performance characteristics. Consult us, or our representatives
before use, to confirm that the information in this datasheet is up to date.
2. We assume no responsibility for any infringement of patents, patent rights, or other
rights arising from the use of any information and circuitry in this datasheet.
3. Please ensure suitable shipping controls (including fail-safe designs and aging
protection) are in force for equipment employing products listed in this datasheet.
4. The products in this datasheet are not developed, designed, or approved for use with
such equipment whose failure of malfunction can be reasonably expected to directly
endanger the life of, or cause significant injury to, the user.
(e.g. Atomic energy; aerospace; transport; combustion and associated safety
equipment thereof.)
5. Please use the products listed in this datasheet within the specified ranges.
Should you wish to use the products under conditions exceeding the specifications,
please consult us or our representatives.
6. We assume no responsibility for damage or loss due to abnormal use.
7. All rights reserved. No part of this datasheet may be copied or reproduced without the
prior permission of TOREX SEMICONDUCTOR LTD.
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