TEXAS INSTRUMENTS XTR105 Technical data

–200°C

Pt100 NONLINEARITY CORRECTION

USING XTR105

Process Temperature (°C)

+850°C

5

4

3

2

1

0

–1

Uncorrected

RTD Nonlinearity

Corrected

Nonlinearity

Nonlinearity (%)

XTR105

XTR105

XTR105

SBOS061B – FEBRUARY 1997 – REVISED AUGUST 2004

4-20mA CURRENT TRANSMITTER

with Sensor Excitation and Linearization

FEATURES

● LOW UNADJUSTED ERROR

● TWO PRECISION CURRENT SOURCES: 800µA each

● LINEARIZATION

● 2- OR 3-WIRE RTD OPERATION

● LOW OFFSET DRIFT: 0.4µV/°C

● LOW OUTPUT CURRENT NOISE: 30nA

PP

APPLICATIONS

● INDUSTRIAL PROCESS CONTROL

● FACTORY AUTOMATION

● SCADA REMOTE DATA ACQUISITION

● REMOTE TEMPERATURE AND PRESSURE

TRANSDUCERS

● HIGH PSR: 110dB minimum

● HIGH CMR: 86dB minimum

● WIDE SUPPLY RANGE: 7.5V to 36V

● DIP-14 AND SO-14 PACKAGES

DESCRIPTION

The XTR105 is a monolithic 4-20mA, 2-wire current transmit­ter with two precision current sources. It provides complete
current excitation for platinum RTD temperature sensors and
bridges, instrumentation amplifiers, and current output cir­cuitry on a single integrated circuit.

Versatile linearization circuitry provides a 2nd-order correc­tion to the RTD, typically achieving a 40:1 improvement in
linearity.

Instrumentation amplifier gain can be configured for a wide
range of temperature or pressure measurements. Total un­adjusted error of the complete current transmitter is low
enough to permit use without adjustment in many applica­tions. This includes zero output current drift, span drift, and
nonlinearity. The XTR105 operates on loop power-supply
voltages down to 7.5V.

RTD

The XTR105 is available in DIP-14 and SO-14 surface­mount packages and is specified for the –40°C to +85°C
industrial temperature range.

= 0.8mA

I

R

IR = 0.8mA

R

G

+

–

V

LIN

XTR105

V

REG

7.5V to 36V

4-20 mA

V

PS

V

O

R

L

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

All trademarks are the property of their respective owners.

PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.

Copyright © 1997-2004, Texas Instruments Incorporated

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ABSOLUTE MAXIMUM RATINGS

(1)

Power Supply, V+ (referenced to the IO pin)...................................... 40V

, V

Input Voltage, V

(referenced to the IO pin) ....................0V to V+

IN+

IN–

Storage Temperature Range ......................................... –55°C to +125°C

Lead Temperature (soldering, 10s) ............................................... +300°C

Output Current Limit ................................................................ Continuous

Junction Temperature .................................................................... +165°C

NOTE: (1) Stresses above those listed under “Absolute Maximum Ratings”
may cause permanent damage to the device. Exposure to absolute maximum
conditions for extended periods may affect device reliability.

ELECTROSTATIC
DISCHARGE SENSITIVITY

This integrated circuit can be damaged by ESD. Texas Instru­ments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling
and installation procedures can cause damage.

ESD damage can range from subtle performance degrada­tion to complete device failure. Precision integrated circuits
may be more susceptible to damage because very small
parametric changes could cause the device not to meet its
published specifications.

PACKAGE/ORDERING INFORMATION

(1)

SPECIFIED

PACKAGE TEMPERATURE PACKAGE ORDERING TRANSPORT

PRODUCT PACKAGE-LEAD DESIGNATOR RANGE MARKING NUMBER MEDIA, QUANTITY

XTR105 DIP-14 N –40°C to +85°C XTR105PA XTR105PA Rails, 25

" """XTR105P XTR105P Rails, 25

XTR105 SO-14 Surface-Mount D –40°C to +85°C XTR105UA XTR105UA Rails, 58

" """XTR105UA XTR105UA/2K5 Tape and Reel, 2500

XTR105 SO-14 Surface-Mount D –40°C to +85°C XTR105U XTR105U Rails, 58

" """XTR105U XTR105U/2K5 Tape and Reel, 2500

NOTE: (1) For the most current package and ordering information, see the Package Option Addendum located at the end of this data sheet.

FUNCTIONAL BLOCK DIAGRAM

V

LIN

I

R1

12

13

+

V

IN

4

R

LIN

R

G

3

2

–

V

IN

1kΩ

6

I

RET

I

R2

1

14

800µA 800µA

100µA

V

I = 100µA +

R

IN
G

975Ω

V

REG

11

5.1V

25Ω

7

IO = 4mA + V

V+

10

B

Q

1

9

E
8

40

•

( )

IN

R

G

PIN CONFIGURATION

Top View DIP and SO

1

I

R1
– +

2

VIN

3

R

G

4

R

G

5

NC

6

I

RET

7

I

O

NC = No Internal Connection

14
13
12
11
10

9
8

I

R2

V

IN

V

LIN

V

REG

V+
B (Base)
E (Emitter)

2

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XTR105

SBOS061B

ELECTRICAL CHARACTERISTICS

At TA = +25°C, V+ = 24V, and TIP29C external transistor, unless otherwise noted.

XTR105P, U XTR105PA, UA
PARAMETER CONDITIONS MIN TYP MAX MIN TYP MAX UNITS
OUTPUT

Output Current Equation A
Output Current, Specified Range 4 20 ✻✻mA
Over-Scale Limit 24 27 30 ✻✻✻ mA
Under-Scale Limit I

ZERO OUTPUT

(1)

= 0V 1.8 2.2 2.6 ✻✻✻ mA

REG

VIN = 0V, RG = ∞ 4 ✻ mA

Initial Error ±5 ±25 ✻ ±50 µA

vs Temperature ±0.07 ±0.5 ✻ ±0.9 µA/°C
vs Supply Voltage, V+ V+ = 7.5V to 36V 0.04 0.2 ✻✻ µA/V
vs Common-Mode Voltage
vs V

Output Current 0.3 ✻ µA/mA

REG

Noise, 0.1Hz to 10Hz 0.03 ✻ µA

VCM = 1.25V to 3.5V

(2)

SPAN

Span Equation (transconductance)
Initial Error

vs Temperature

Nonlinearity, Ideal Input

INPUT

(3)

(3)

(4)

(5)

Full-Scale (VIN) = 50mV ±0.05 ±0.2 ✻ ±0.4 %

Full-Scale (VIN) = 50mV 0.003 0.01 ✻✻ %

Offset Voltage VCM = 2V ±50 ±100 ✻ ±250 µV

vs Temperature ±0.4 ±1.5 ✻ ±3 µV/°C
vs Supply Voltage, V+ V+ = 7.5V to 36V ±0.3 ±3 ✻✻ µV/V
vs Common-Mode Voltage, VCM = 1.25V to 3.5V

RTI (CMRR)

Common-Mode Input Range

(2)

(2)

Input Bias Current 525 ✻ 50 nA

vs Temperature 20 ✻ pA/°C

Input Offset Current ±0.2 ±3 ✻ ±10 nA

vs Temperature 5 ✻ pA/°C

Impedance, Differential 0.1 || 1 ✻ GΩ || pF

Common-Mode 5 || 10 ✻ GΩ || pF

Noise, 0.1Hz to 10Hz 0.6 ✻ µV
CURRENT SOURCES VO = 2V

(6)

Current 800 ✻ µA
Accuracy ±0.05 ±0.2 ✻ ±0.4 %

vs Temperature ±15 ±35 ✻ ±75 ppm/°C
vs Power Supply, V+ V+ = 7.5V to 36V ±10 ±25 ✻✻ ppm/V

Matching ±0.02 ±0.1 ✻ ±0.2 %

vs Temperature ±3 ±15 ✻ ±30 ppm/°C
vs Power Supply, V+ V+ = 7.5V to 36V 1 10 ✻✻ ppm/V

Compliance Voltage, Positive (V+) – 3

Negative

(2)

Output Impedance 150 ✻ MΩ
Noise, 0.1Hz to 10Hz 0.003 ✻ µA

(2)

V

REG

Accuracy ±0.02 ±0.1 ✻✻ V

vs Temperature ±0.2 ✻ mV/°C

vs Supply Voltage, V+ 1 ✻ mV/V
Output Current ±1 ✻ mA
Output Impedance 75 ✻ Ω

LINEARIZATION

R

(internal) 1 ✻ kΩ

LIN

Accuracy ±0.2 ±0.5 ✻ ±1%

vs Temperature ±25 ±100 ✻✻ ppm/°C

POWER SUPPLY

Specified +24 ✻ V
Voltage Range +7.5 +36 ✻✻V

TEMPERATURE RANGE

Specification, T
Operating –55 +125 ✻✻°C

MIN

to T

MAX

Storage –55 +125 ✻✻°C
Thermal Resistance,

DIP-14 80 ✻ °C/W

θ

JA

SO-14 Surface-Mount 100 ✻ °C/W

✻ Specification same as XTR105P and XTR105U.
NOTES: (1) Describes accuracy of the 4mA low-scale offset current. Does not include input amplifier effects. Can be trimmed to zero.

(2) Voltage measured with respect to I
(3) Does not include initial error or TCR of gain-setting resistor, R

RET

pin.

(4) Increasing the full-scale input range improves nonlinearity.
(5) Does not include Zero Output initial error.
(6) Current source output voltage with respect to I

RET

pin.

IO = VIN • (40/RG) + 4mA, VIN in Volts, RG in Ω

0.02 ✻ µA/V

S = 40/R

G

✻ A/V

±3 ±25 ✻✻ ppm/°C

±10 ±50 ✻ ±100 µV/V

1.25 3.5 ✻✻V

(V+) – 2.5

✻✻ V

0 –0.2 ✻✻ V

5.1 ✻ V

–40 +85 ✻✻°C

.

G

PP

PP

PP

XTR105

SBOS061B

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3

TYPICAL CHARACTERISTICS

At TA = +25°C and V+ = 24V, unless otherwise noted.

50

40

30

20

10

Transconductance (20 Log mA/V)

0

100 1k 10k 100k

110
100

90
80
70
60
50
40

Common-Mode Rejection (dB)

30
20

TRANSCONDUCTANCE vs FREQUENCY

RG = 500Ω

RG = 2kΩ

Frequency (Hz)

COMMON-MODE REJECTION vs FREQUENCY

Full-Scale Input = 50mV

RG = 2kΩ

10 100 1k 10k 100k

Frequency (Hz)

R

G

= 125Ω

RG = 125Ω

1M

1M

STEP RESPONSE

RG = 2kΩ

20mA

RG = 125Ω

4mA/div

4mA

25µs/div

140

120

100

80

60

40

Power Supply Rejection (dB)

20

POWER-SUPPLY REJECTION vs FREQUENCY

RG = 2kΩ

0

10 100 1k 10k 100k

Frequency (Hz)

RG = 125Ω

1M

29

28

27

V+ = 36V

26

25

Over-Scale Current (mA)

24

23

–75 –50 –25 0 25 50 75 100

4

OVER-SCALE CURRENT vs TEMPERATURE

With External Transistor

V+ = 7.5V

V+ = 24V

Temperature (°C)

125

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2.40

2.35

2.30

2.25

Under-Scale Current (mA)

2.20

2.15

UNDER-SCALE CURRENT vs TEMPERATURE

V+ = 7.5V to 36V

–75 –50 –25 0 25 50 75 100

Temperature (°C)

125

XTR105

SBOS061B

TYPICAL CHARACTERISTICS (Cont.)

–75 –50 –25 0 25 50 75 100

Temperature (°C)

ZERO OUTPUT CURRENT ERROR

vs TEMPERATURE

125

4
2
0

–2
–4
–6

–8
–10
–12

Zero Output Current Error (µA)

At TA = +25°C and V+ = 24V, unless otherwise noted.

INPUT VOLTAGE AND CURRENT
NOISE DENSITY vs FREQUENCY

10k

1k

100

Input Voltage Noise (nV/√Hz)

10

1 10 100 1k 10k

Frequency (Hz)

INPUT BIAS AND OFFSET CURRENT

vs TEMPERATURE

25

20

15

Current Noise

Voltage Noise

ZERO OUTPUT AND REFERENCE

10k

1k

100

Input Current Noise (fA/√Hz)

10

100k

+I

B

10k

1k

100

Noise (pA/√Hz)

10

1 10 100 1k 10k

CURRENT NOISE vs FREQUENCY

Zero Output Current

Reference Current

100k

Frequency (Hz)

10

5

Input Bias and Offset Current (nA)

0

–75 –50 –25 0 25 50 75 100

INPUT OFFSET VOLTAGE DRIFT

50
45
40
35
30
25
20
15

Percent of Units (%)

10

5
0

0.2

XTR105

SBOS061B

PRODUCTION DISTRIBUTION

0.4

0.6

0.8

Input Offset Voltage Drift (µV/°C)

Temperature (°C)

Typical Production Distribution

0.1%

1.0

1.2

1.4

1.6

1.8

I

OS

of Packaged Units.

0.02%

2.0

2.2

2.4

2.6

2.8

–I

B

125

3.0

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40
35
30
25
20
15

Percent of Units (%)

10

5
0

0.025

0.050

0.075

ZERO OUTPUT DRIFT

PRODUCTION DISTRIBUTION

Typical Production Distribution

0.100

0.125

0.150

0.175

0.200

0.225

0.250

0.275

0.300

Zero Output Drift (µA/°C)

of Packaged Units.

0.325

0.350

0.375

0.400

0.425

0.450

0.475

0.500

5

TYPICAL CHARACTERISTICS (Cont.)

At TA = +25°C and V+ = 24V, unless otherwise noted.

40
35
30
25
20
15

Percent of Units (%)

10

5
0

5

10152025303540455055606570

OUTPUT VOLTAGE vs V

V

REG

5.35

5.30

5.25

5.20

125°C

CURRENT SOURCE DRIFT

PRODUCTION DISTRIBUTION

Typical Production Distribution

Current Source Drift (ppm/°C)

25°C

of Packaged Units.

I

AND IR2 Included.

R1

0.04%

OUTPUT CURRENT

REG

0.01%

CURRENT SOURCE MATCHING

80
70
60
50
40
30

Percent of Units (%)

20
10

0

75

+0.05

0

–0.05

DRIFT PRODUCTION DISTRIBUTION

Typical Production Distribution

0.07%

2

4

6

8

1012141618202224262830

Current Source Matching Drift (ppm/°C)

REFERENCE CURRENT ERROR

vs TEMPERATURE

of Packaged Units.

0.02%

5.15

Output Voltage (V)

REG

V

–55°C

5.10

5.05

5.00
–1.0 –0.5 0 0.5 1.0 1.5

Output Current (mA)

V

REG

NOTE: Above 1mA,
Zero Output Degrades

2.0

–0.10

–0.15

Reference Current Error (%)

–0.20

–75 –50 –25 0 25 50 75 100 125

Temperature (°C)

6

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XTR105

SBOS061B

APPLICATION INFORMATION

Figure 1 shows the basic connection diagram for the XTR105.
The loop power supply, V
Output loop current is measured as a voltage across the
series load resistor, R

Two matched 0.8mA current sources drive the RTD and
zero-setting resistor, RZ. The instrumentation amplifier input
of the XTR105 measures the voltage difference between the
RTD and R

. The value of RZ is chosen to be equal to the

Z

resistance of the RTD at the low-scale (minimum) measure­ment temperature. R
at the minimum measurement temperature to correct for
input offset voltage and reference current mismatch of the
XTR105.

RCM provides an additional voltage drop to bias the inputs of
the XTR105 within their common-mode input range. R
should be bypassed with a 0.01µF capacitor to minimize
common-mode noise. Resistor R
mentation amplifier according to the desired temperature
range. R

provides 2nd-order linearization correction to the

LIN1

RTD, typically achieving a 40:1 improvement in linearity. An
additional resistor is required for 3-wire RTD connections
(see Figure 3).

, provides power for all circuitry.

PS

.

L

can be adjusted to achieve 4mA output

Z

sets the gain of the instru-

G

CM

The transfer function through the complete instrumentation
amplifier and voltage-to-current converter is:

IO = 4mA + V

in volts, RG in ohms)

(V

IN

where V

is the differential input voltage.

IN

As evident from the transfer function, if no R

• (40/RG)

IN

is used the

G

gain is zero and the output is simply the XTR105’s zero
current. The value of R
wire RTD connections with linearization. R

varies slightly for 2-wire RTD and 3-

G

can be calcu-

G

lated from the equations given in Figure 1 (2-wire RTD
connection) and Table I (3-wire RTD connection).

The I
sources and V

pin is the return path for all current from the current

RET

REG

. The I

pin allows any current used in

RET

external circuitry to be sensed by the XTR105 and to be
included in the output current without causing an error.

The V

pin provides an on-chip voltage source of approxi-

REG

mately 5.1V and is suitable for powering external input
circuitry (refer to Figure 6). It is a moderately accurate
voltage reference—it is not the same reference used to set
the 800µA current references. V

is capable of sourcing

REG

approximately 1mA of current. Exceeding 1mA may affect
the 4mA zero output.

RTD

IR = 0.8mA

IR = 0.8mA

12

1

V

LIN

13

+

V

IN

4

R

G

(2)

R

G

3

(3)

R

LIN1

(1)

R

Z

RCM = 1kΩ

0.01µF

R

G

–

V

2

IN

I

RET

6

I

R1

I

R2

XTR105

14

11

V

REG

V+

I

O

7.5V to 36V

10

9

B

E

7

Q

1

8

I = 4mA + V

O

NOTES: (1) RZ = RTD resistance at minimum measured temperature.

Possible choices for Q

0.01µF

40

• ( )

IN

R

G

(2)

RG =

(3)

=

R

LIN1

= RTD Resistance at (T

where R

1

= RTD Resistance at T

R

2

R

= 1kΩ (Internal)

LIN

(see text).

1

R

LIN(R2

– R2 – RZ)

1

PACKAGE

R

– R

2

– R1)

TO-225
TO-220
TO-220

4-20 mA

R

L

1

I

MIN

MAX

O

TYPE

2N4922

TIP29C
TIP31C

2R1(R2 +RZ) – 4(R2RZ)

2(2R

+ T

V

O

MAX

)/2

+

V

PS

–

FIGURE 1. Basic 2-Wire RTD Temperature Measurement Circuit with Linearization.

XTR105

SBOS061B

www.ti.com

7

MEASUREMENT TEMPERATURE SPAN ∆T (°C)

T

100°C 200°C 300°C 400°C 500°C 600°C 700°C 800°C 900°C1000°C

MIN

–200°C 18.7/86.6 18.7/169 18.7/255 18.7/340 18.7/422 18.7/511 18.7/590 18.7/665 18.7/750 18.7/845

15000 9760 8060 6650 5620 4750 4020 3480 3090 2740
16500 11500 10000 8870 7870 7150 6420 5900 5360 4990

–100°C 60.4/80.6 60.4/162 60.4/243 60.4/324 60.4/402 60.4/487 60.4/562 60.4/649 60.4/732

27400 15400 10500 7870 6040 4990 4220 3570 3090
29400 17800 13000 10200 8660 7500 6490 5900 5360

0°C 100/78.7 100/158 100/237 100/316 100/392 100/475 100/549 100/634

33200 16200 10500 7680 6040 4870 4020 3480
35700 18700 13000 10000 8250 7150 6340 5620

100°C 137/75 137/150 137/226 137/301 137/383 137/453 137/536

31600 15400 10200 7500 5760 4750 3920
34000 17800 12400 9760 8060 6810 6040

200°C 174/73.2 174/147 174/221 174/294 174/365 174/442

30900 15000 9760 7150 5620 4530
33200 17400 12100 9310 7680 6490

RZ/R

R

LIN1

R

LIN2

G

300°C 210/71.5 210/143 210/215 210/287 210/357

30100 14700 9530 6980 5360
32400 16500 11500 8870 7320

400°C 249/68.1 249/137 249/205 249/274

28700 14000 9090 6650
30900 16200 11000 8450

500°C 280/66.5 280/133 280/200

28000 13700 8870
30100 15400 10500

600°C 316/64.9 313/130

26700 13000
28700 14700

NOTE: The values listed in this table are 1% resistors (in Ω).
Exact values may be calculated from the following equa­tions:

RZ = RTD resistance at minimum measured temperature.

RG=

R

LIN1

2(R

=

2–RZ

(R

R

LIN(R2–R1

2(2R

1–R2–RZ

)(R1–RZ)

2–R1

)

)

)

700°C 348/61.9

26100
27400

800°C 374/60.4

24900
26700

(R

+RG)(R2–R1)

LIN2

LIN

=

2(2R

1–R2–RZ

)

R

where: R1 = RTD resistance at (T

R2 = RTD resistance at T

= 1kΩ (Internal)

R

LIN

MAX

+ T

)/2

MIN

MAX

EXAMPLE:

The measurement range is –100°C to +200°C for a 3-wire Pt100 RTD connection. Determine the values for RS, RG, R
from the chart or calculate the values according to the equations provided.

METHOD 1: TABLE LOOK UP

= –100°C and ∆T = –300°C, the 1% values are:

For T

MIN

R

= 60.4Ω R

Z

R

= 243Ω R

G

METHOD 2: CALCULATION
Step 1: Determine R

R

is the RTD resistance at the minimum measured temperature,T

Z

Using Equation 1 at right gives R
R

is the RTD resistance at the maximum measured temperature, T

2

Using Equation 2 at right gives R

is the RTD resistance at the midpoint measured temperature,

R

1

T

= (T

MID

MIN

Using Equation 2 at right gives R

Step 2: Calculate R

R

G

R

LIN1

R

LIN2

TABLE I. RZ, RG, R

, R1, and R2.

Z

+ T

) /2 = 50°C. R1 is NOT the average of RZ and R2.

MAX

, R

G

LIN1

= 242.3Ω (1% value is 243Ω)

= 10.413kΩ (1% value is 10.5kΩ)
= 12.936kΩ (1% value is 13kΩ)

LIN1

A negative input voltage, VIN, will cause the output current to
be less than 4mA. Increasingly negative V
output current to limit at approximately 2.2mA. Refer to the
typical characteristic Under-Scale Current vs Temperature.

LIN1
LIN2

, and R

, and R

= 10.5kΩ
= 13kΩ

Calculation of Pt100 Resistance Values

(according to DIN IEC 751)

= 60.25Ω (1% value is 60.4Ω).

Z

= 175.84Ω.

2

= 119.40Ω.

1

using equations above.

LIN2

= –100°C.

MIN

= 200°C.

MAX

(Equation 1) Temperature range from –200°C to 0°C:

= 100 [1 + 3.90802 • 10–3 • T – 0.5802 • 10–6 •

R

(T)

2

T

– 4.27350 • 10

(Equation 2) Temperature range from 0°C to +850°C:

R

= 100 (1 + 3.90802 • 10–3 • T – 0.5802 • 10–6 • T2)

(T)

where: R

is the resistance in Ω at temperature T.

(T)

T is the temperature in °C.

NOTE: Most RTD manufacturers provide reference tables for
resistance values at various temperatures.

Standard 1% Resistor Values for 3-Wire Pt100 RTD Connection with Linearization.

LIN2

Increasingly positive input voltage (greater than the full-scale

will cause the

IN

input) will produce increasing output current according to the
transfer function, up to the output current limit of approxi­mately 27mA. Refer to the typical characteristic Over-Scale
Current vs Temperature.

, and R

LIN1

–12

(T – 100) T3]

. Look up the values

LIN2

8

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XTR105

SBOS061B

EXTERNAL TRANSISTOR

Transistor Q1 conducts the majority of the signal-dependent
4-20mA loop current. Using an external transistor isolates
the majority of the power dissipation from the precision input
and reference circuitry of the XTR105, maintaining excellent
accuracy.

Since the external transistor is inside a feedback loop, its
characteristics are not critical. Requirements are: V
min,

β

= 40 min, and PD = 800mW. Power dissipation

CEO

= 45V

requirements may be lower if the loop power-supply voltage
is less than 36V. Some possible choices for Q

are listed in

1

Figure 1.
The XTR105 can be operated without this external transis-

tor, however, accuracy will be somewhat degraded due to
the internal power dissipation. Operation without Q

is not

1

recommended for extended temperature ranges. A resistor
(R = 3.3kΩ) connected between the I

pin and the E

RET

(emitter) pin may be needed for operation below 0°C with­out Q

to ensure the full 20mA full-scale output, especially

1

with V+ near 7.5V.

10

V+

8

E

I

RET

6

XTR105

R

= 3.3kΩ

Q

I

O

7

0.01µF

For operation without an external
transistor, connect a 3.3kΩ
resistor between pin 6 and pin 8.
See text for discussion
of performance.

FIGURE 2. Operation Without an External Transistor.

LOOP POWER SUPPLY

The voltage applied to the XTR105, V+, is measured with
respect to the I
to 36V. The loop-supply voltage, V
voltage applied to the XTR105 according to the voltage drop
on the current sensing resistor, R
drop in the line).

If a low loop-supply voltage is used, RL (including the loop
wiring resistance) must be made a relatively low value to
assure that V+ remains 7.5V or greater for the maximum loop
current of 20mA:

connection, pin 7. V+ can range from 7.5V

O

VV

()– .

+

max






R

L

20

75

mA

, will differ from the

PS

(plus any other voltage

L



–=

R



WIRING



It is recommended to design for V+ equal or greater than

7.5V with loop currents up to 30mA to allow for out-of-range
input conditions.

The low operating voltage (7.5V) of the XTR105 allows
operation directly from personal computer power supplies
(12V ±5%). When used with the RCV420 current loop re­ceiver (see Figure 7), the load resistor voltage drop is limited
to 3V.

ADJUSTING INITIAL ERRORS

Many applications require adjustment of initial errors. Input
offset and reference current mismatch errors can be cor­rected by adjustment of the zero resistor, R
gain-setting resistor, R

, corrects any errors associated with

G

. Adjusting the

Z

gain.

2- AND 3-WIRE RTD CONNECTIONS

In Figure 1, the RTD can be located remotely simply by
extending the two connections to the RTD. With this remote
2-wire connection to the RTD, line resistance will introduce
error. This error can be partially corrected by adjusting the
values of R

Z, RG

, and R

LIN1

.

A better method for remotely located RTDs is the 3-wire RTD
connection (see Figure 3). This circuit offers improved accu­racy. R

’s current is routed through a third wire to the RTD.

Z

Assuming line resistance is equal in RTD lines 1 and 2, this
produces a small common-mode voltage that is rejected by
the XTR105. A second resistor, R

, is required for linear-

LIN2

ization.
Note that although the 2-wire and 3-wire RTD connection

circuits are very similar, the gain-setting resistor, R

, has

G

slightly different equations:

R

=

2-wire:

3-wire:

G

R

=

G

where: RZ = RTD resistance at T

R1 = RTD resistance at (T

= RTD resistance at T

R

2

12 2

( – )( – )

2

ZZ

–

RR

21

RRRR

21

ZZ

–

RR

21

MIN

MIN

MAX

+ T

MAX

)/2

()– ()

RR R RR

+24

To maintain good accuracy, at least 1% (or better) resistors
should be used for R

. Table I provides standard 1% R

G

resistor values for a 3-wire Pt100 RTD connection with
linearization.

LINEARIZATION

RTD temperature sensors are inherently (but predictably)
nonlinear. With the addition of one or two external resistors,
R

and R

LIN1

nonlinearity resulting in 40:1 improvement in linearity over
the uncompensated output.

See Figure 1 for a typical 2-wire RTD application with
linearization. Resistor R
controls linearity correction. R
desired temperature range. An equation is given in Figure 1.

, it is possible to compensate for most of this

LIN2

provides positive feedback and

LIN1

is chosen according to the

LIN1

G

XTR105

SBOS061B

www.ti.com

9

In 3-wire RTD connections, an additional resistor, R
required. As with the 2-wire RTD application, R
positive feedback for linearization. R

LIN2

LIN1

provides an offset

, is

LIN2

provides

canceling current to compensate for wiring resistance en­countered in remotely located RTDs. R

LIN1

and R

LIN2

are
chosen such that their currents are equal. This makes the
voltage drop in the wiring resistance to the RTD a common­mode signal that is rejected by the XTR105. The nearest
standard 1% resistor values for R

LIN1

and R

should be

LIN2

adequate for most applications. Table I provides the 1%
resistor values for a 3-wire Pt100 RTD connection.

If no linearity correction is desired, the V
open. With no linearization, R
V

= full-scale input range.

FS

= 2500 • VFS, where

G

pin should be left

LIN

RTDs

The text and figures thus far have assumed a Pt100 RTD. With
higher resistance RTDs, the temperature range and input
voltage variation should be evaluated to ensure proper com­mon-mode biasing of the inputs. As mentioned earlier, R
be adjusted to provide an additional voltage drop to bias the
inputs of the XTR105 within their common-mode input range.

CM

can

ERROR ANALYSIS

See Table II for how to calculate the effect various error
sources have on circuit accuracy. A sample error calculation
for a typical RTD measurement circuit (Pt100 RTD, 200°C
measurement span) is provided. The results reveal the
XTR105’s excellent accuracy, in this case 1.1% unadjusted.
Adjusting resistors R

and RZ for gain and offset errors

G

improves circuit accuracy to 0.32%. Note that these are
worst-case errors; ensured maximum values were used in
the calculations and all errors were assumed to be positive
(additive). The XTR105 achieves performance that is difficult
to obtain with discrete circuitry and requires less space.

OPEN-CIRCUIT PROTECTION

The optional transistor Q2 in Figure 3 provides predictable
behavior with open-circuit RTD connections. It assures that
if any one of the three RTD connections is broken, the
XTR105’s output current will go to either its high current limit
(≈ 27mA) or low current limit (≈ 2.2mA). This is easily
detected as an out-of-range condition.

EQUAL line resistances here
creates a small common-mode
voltage which is rejected by
the XTR105.

Resistance in this line causes

a small common-mode voltage

which is rejected by the XTR105.

(1)

R

LIN1

2

(R

)(R

LINE2

RTD

(R

)

LINE3

3

12

1

V

13

(1)

R

LIN2

(1)

R

Z

1

)

LINE1

(2)

Q

2

2N2222

+

V

IN

4

R

G

(1)

R

G

3

R

G

2

–

V

IN

I

RET

LIN

14

I

R1

XTR105

6

R

11

I

R2

10

V

REG

V+

9

B

Q

1

E

8

I

O

7

= 1000Ω

CM

NOTES: (1) See Table I for resistor equations and
1% values. (2) Q
output current if any one RTD connection is
broken:

0.01µF

optional. Provides predictable

2

OPEN RTD
TERMINAL

I

O

0.01µF

I

O

I

O

1

≈ 2.2mA

2

≈27mA

3

≈2.2mA

FIGURE 3. Remotely Located RTDs with 3-Wire Connection.

10

www.ti.com

XTR105

SBOS061B

SAMPLE ERROR CALCULATION

RTD value at 4mA Output (R
RTD Measurement Range: 200°C
Ambient Temperature Range (∆T
Supply Voltage Change (∆V+): 5V

RTD MIN

): 20°C

A

): 100Ω

Common-Mode Voltage Change (∆CM): 0.1V

SAMPLE

ERROR SOURCE ERROR EQUATION ERROR CALCULATION
INPUT

Input Offset Voltage V

vs Common-Mode CMRR • ∆CM/(V
Input Bias Current I
Input Offset Current I

/(V

OS

IN MAX

B/IREF

• R

OS

RTD MIN

EXCITATION

Current Reference Accuracy I

vs Supply (I
Current Reference Matching I

vs Supply (I

Accuracy (%)/100% • 10

REF

vs V+) • ∆V+ 25ppm/V • 5V 125 125

REF

Matching (%)/100% • 800µA • 0.1%/100% • 800µA • 100Ω/(800µA • 0.38Ω/°C • 200°C) • 10

REF

R

/(V

RTD MIN

Matching vs V+) • ∆V+ • 10ppm/V • 5V • 800µA • 100Ω/(800µA • 0.38Ω/°C • 200°C) 66 66

REF

R

RTD MIN

GAIN

Span Span Error (%)/100% • 10
Nonlinearity Nonlinearity (%)/100% • 10

OUTPUT

Zero Output (I

vs Supply (I

DRIFT (∆T

Input Offset Voltage Drift • ∆T

= 20°C)

A

Input Bias Current (typical) Drift • ∆T
Input Offset Current (typical) Drift • ∆T
Current Reference Accuracy Drift • ∆T
Current Reference Matching Drift • ∆T
Span Drift • ∆T
Zero Output Drift • ∆T

– 4mA) /16000µA • 10

ZERO

vs V+) • ∆V+/16000µA • 10

ZERO

/(V

A

A

• R

A

RTD MIN

• 800µA • R

A

/16000µA • 10

A

NOISE (0.1Hz to 10Hz, typ)

Input Offset Voltage v
Current Reference I
Zero Output I

Noise • R

REF

Noise/16000µA • 10

ZERO

/(V

n

IN MAX
RTD MIN

) • 10

IN MAX

6

• 10

/(V

IN MAX

) • 10

IN MAX

/(V

IN MAX

) • 10

IN MAX

/800µA • 10

/(V

IN MAX

A

RTD MIN

A

6

) • 10

/(V

IN MAX

6

) • 10

) • 10

6

)

6

/(V

6

6

6

6

6

6

) • 10

6

6

6

100µV/(800µA • 0.38Ω/°C • 200°C) • 10

50µV/V • 0.1V/(800µA • 0.38Ω/°C • 200°C) • 10

0.025µA/800µA • 10

3nA • 100Ω/(800µA • 0.38Ω/°C • 200°C) • 10

0.2%/100% • 10

0.2%/100% • 10

0.01%/100% • 10

25µA/16000µA • 10

0.2µA/V • 5V/16000µA • 10

1.5µV/°C • 20°C/(800µA • 0.38Ω/°C • 200°C) • 10
20pA/°C • 20°C/800µA • 10

5pA/°C • 20°C • 100W/(800µA • 0.38Ω/°C • 200°C) • 10

35ppm/°C • 20°C 700 700

) 15ppm/°C • 20°C • 800µA • 100Ω/(800µA • 0.38Ω/°C • 200°C) 395 395

IN MAX

6

) • 10

6

6

0.6µV/(800µA • 0.38Ω/°C • 200°C) • 10

3nA • 100Ω/(800µA • 0.38Ω/°C • 200°C) • 10

25ppm/°C • 20°C 500 500

0.5µA/°C • 20°C/16000µA • 10

0.03µA/16000µA • 10

NOTE (1): All errors are min/max and referred to input unless otherwise stated.

ERROR

(ppm of Full Scale)

(1)

6

6

6

6

UNADJ. ADJUST.

1645 0

82 82
31 0

50

Total Input Error: 1763 82

6

6

2000 0

1316 0

Total Excitation Error: 3507 191

6

6

2000 0

100 100

Total Gain Error: 2100 100

6

6

1563 0

63 63

Total Output Error: 1626 63

6

6

6

6

493 493

0.5 0.5

0.2 0.2

626 626

Total Drift Error: 2715 2715

6

6

6

10 10

55
22

Total Noise Error: 17 17

TOTAL ERROR: 11728 3168

(1.17%) (0.32%)

TABLE II. Error Calculation.

XTR105

SBOS061B

www.ti.com

11

REVERSE-VOLTAGE PROTECTION

The XTR105’s low compliance rating (7.5V) permits the use
of various voltage protection methods without compromising
operating range. Figure 4 shows a diode bridge circuit that
allows normal operation even when the voltage connection
lines are reversed. The bridge causes a two diode drop
(approximately 1.4V) loss in loop-supply voltage. This results
in a compliance voltage of approximately 9V—satisfactory
for most applications. If a 1.4V drop in loop supply is too
much, a diode can be inserted in series with the loop-supply
voltage and the V+ pin. This protects against reverse output
connection lines with only a 0.7V loss in loop-supply voltage.

SURGE PROTECTION

Remote connections to current transmitters can sometimes be
subjected to voltage surges. It is prudent to limit the maximum
surge voltage applied to the XTR105 to as low as practical.
Various zener diodes and surge clamping diodes are specially
designed for this purpose. Select a clamp diode with as low a
voltage rating as possible for best protection. For example, a
36V protection diode will assure proper transmitter operation
at normal loop voltages, yet will provide an appropriate level
of protection against voltage surges. Characterization tests on
three production lots showed no damage to the XTR105 within
loop-supply voltages up to 65V.

Most surge protection zener diodes have a diode character­istic in the forward direction that will conduct excessive
current, possibly damaging receiving-side circuitry if the loop
connections are reversed. If a surge protection diode is used,
a series diode or diode bridge should be used for protection
against reversed connections.

RADIO FREQUENCY INTERFERENCE

The long wire lengths of current loops invite radio frequency
(RF) interference. RF can be rectified by the sensitive input
circuitry of the XTR105 causing errors. This generally ap­pears as an unstable output current that varies with the
position of loop supply or input wiring.

If the RTD sensor is remotely located, the interference may
enter at the input terminals. For integrated transmitter as­semblies with short connections to the sensor, the interfer­ence more likely comes from the current loop connections.

Bypass capacitors on the input reduce or eliminate this input
interference. Connect these bypass capacitors to the I
terminal (see Figure 5). Although the dc voltage at the I
terminal is not equal to 0V (at the loop supply, VPS), this
circuit point can be considered the transmitter’s “ground.”
The 0.01µF capacitor connected between V+ and I
help minimize output interference.

may

O

RET
RET

10

V+

XTR105

I

RET

6

B

9

E

8

I

O

7

0.01µF

(1)

D

1

1N4148

Diodes

The diode bridge causes
a 1.4V loss in loop-supply
voltage.

FIGURE 4. Reverse Voltage Operation and Over-Voltage Surge Protection.

NOTE: (1) Zener Diode 36V: 1N4753A or General
Semiconductor Transorb
voltage zener diodes with loop-power supply
voltages less than 30V for increased protection.
See the Surge Protection section.

R

L

TM

1N6286A. Use lower

Maximum V
less than minimum
voltage rating of zener

V

PS

diode.

must be

PS

12

www.ti.com

XTR105

SBOS061B

R

LIN1

RTD

12

1

1kΩ

R

LIN2

R

1kΩ

R

Z

0.01µF 0.01µF

(1)

R

CM

V

LIN

13

+

V

IN

4

R

G

G

3

R

G

–

V

2

IN

I

RET

I

R1

I

XTR105

14

11

R2

10

V

REG

V+

9

B

E

8

I

O

0.01µF

7

6

0.01µF

NOTE: (1) Bypass capacitors can be connected
to either the I

FIGURE 5. Input Bypassing Technique with Linearization.

V+

1/2

R
412Ω

= 1250Ω

OPA2335

R

F

10kΩ

R

F

10kΩ

1/2

OPA2335

V–

(G = 1 + = 50)

Type J

50Ω

1kΩ

25Ω

R

CM

pin or the IO pin.

RET

I

REG

R
1250Ω

2R

F

R

< 1mA

G

13

5V

12

1

V

LIN

+

V

IN

4

R

G

3

R

G

–

V

2

IN

I

RET

I

R1

6

I

R2

XTR105

14

11

10

V

REG

V+

9

B

E

8

I

O

7

+ –

IO = 4mA + (VIN – VIN)

40

R

G

FIGURE 6. Thermocouple Low Offset, Low Drift Loop Measurement with Diode Cold Junction Compensation.

XTR105

SBOS061B

www.ti.com

13

12

1

V

LIN

14

I

R1

+

V

R

I

IN

G

R2

V

REG

XTR105

R

G

–

V

IN

I

RET

6

Pt100

100°C to

600°C

RTD

R

LIN1

5760Ω

R

Z

137Ω

13

R

G

402Ω

4

3

2

RCM = 1kΩ

0.01µF

FIGURE 7. ±12V Powered Transmitter/Receiver Loop.

1N4148

11

10

V+

9EB

0.01µFQ

1

8

I

O

7

IO = 4mA – 20mA

NOTE: A 2-wire RTD connection is shown. For remotely
located RTDs, a 3-wire RTD conection is recommended.

becomes 383Ω, R

R

G

Table I.

is 8060Ω. See Figure 3 and

LIN2

3

2

+12V

16

–12V

1µF

10

11

RCV420

5

4

1µF

12

= 0 to 5V

V

15

O

14

13

12

1

V

LIN

14

I

R1

+

I

V

R

R

V

R2

IN

G

XTR105

G

–

IN

I

RET

6

NOTE: A 3-wire RTD connection is shown.
For a 2-wire RTD connection eliminate R

RTD

R

LIN1

R

Z

R

LIN2

RCM = 1kΩ

0.01µF

13

4

R

G

3

2

FIGURE 8. Isolated Transmitter/Receiver Loop.

11

V

REG

10

V+

9

B
E

8

I

O

7

IO = 4mA – 20mA

1N4148

+15V

1µF

1µF

0.01µFQ

1

.

LIN2

3

2

16

10

11

RCV420

5

4

12

15

14

13

15

ISO122

16

Isolated Power

0

from PWS740

–15V

1

9

10

2

V+

7

V

O

8

0 – 5V

V–

14

www.ti.com

XTR105

SBOS061B

1.6mA

RCM = 1kΩ

12

1

V

LIN

+

V

13

IN

4

R

G

R

G

3

R

G

–

2

V

IN

I

RET

I

R1

14

I

R2

V

XTR105

REG

11

10

V+

9

B

8

E

7

6

(1)

NOTE: (1) Use RCM to adjust the
common-mode voltage to within

1.25V to 3.5V.

FIGURE 9. Bridge Input, Current Excitation.

XTR105

SBOS061B

www.ti.com

15

PACKAGE OPTION ADDENDUM

www.ti.com

22-Oct-2007

PACKAGING INFORMATION

Orderable Device Status

(1)

Package

Type

Package
Drawing

Pins Package

Qty

Eco Plan

XTR105P ACTIVE PDIP N 14 25 Green (RoHS &

no Sb/Br)

XTR105PA ACTIVE PDIP N 14 25 Green (RoHS &

no Sb/Br)

XTR105PAG4 ACTIVE PDIP N 14 25 Green (RoHS &

no Sb/Br)

XTR105PG4 ACTIVE PDIP N 14 25 Green (RoHS &

no Sb/Br)

XTR105U ACTIVE SOIC D 14 58 Green (RoHS &

no Sb/Br)

XTR105UA ACTIVE SOIC D 14 58 Green (RoHS &

no Sb/Br)

XTR105UA/2K5 ACTIVE SOIC D 14 2500 Green (RoHS &

no Sb/Br)

XTR105UA/2K5E4 ACTIVE SOIC D 14 2500 Green (RoHS &

no Sb/Br)

XTR105UAG4 ACTIVE SOIC D 14 58 Green (RoHS &

no Sb/Br)

XTR105UG4 ACTIVE SOIC D 14 58 Green (RoHS &

no Sb/Br)

(1)

The marketing status values are defined as follows:

ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in

a new design.

PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.

(2)

Lead/Ball Finish MSL Peak Temp

CU NIPDAU N / A for Pkg Type

CU NIPDAU N / A for Pkg Type

CU NIPDAU N / A for Pkg Type

CU NIPDAU N / A for Pkg Type

CU NIPDAU Level-3-260C-168 HR

CU NIPDAU Level-3-260C-168 HR

CU NIPDAU Level-3-260C-168 HR

CU NIPDAU Level-3-260C-168 HR

CU NIPDAU Level-3-260C-168 HR

CU NIPDAU Level-3-260C-168 HR

(3)

(2)

Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check

http://www.ti.com/productcontent for the latest availability information and additional product content details.

TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements

for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS
compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)

(3)

MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder

temperature.

Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is
provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the
accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take
reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on
incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited
information may not be available for release.

In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI
to Customer on an annual basis.

Addendum-Page 1

PACKAGE MATERIALS INFORMATION

www.ti.com

TAPE AND REEL INFORMATION

11-Mar-2008

*All dimensions are nominal

Device Package

XTR105UA/2K5 SOIC D 14 2500 330.0 16.4 6.5 9.0 2.1 8.0 16.0 Q1

Type

Package

Drawing

Pins SPQ Reel

Diameter

(mm)

Reel

Width

W1 (mm)

A0 (mm) B0 (mm) K0 (mm) P1

(mm)W(mm)

Pin1

Quadrant

Pack Materials-Page 1

PACKAGE MATERIALS INFORMATION

www.ti.com

11-Mar-2008

*All dimensions are nominal

Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)

XTR105UA/2K5 SOIC D 14 2500 346.0 346.0 33.0

Pack Materials-Page 2

IMPORTANT NOTICE

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and other changes to its products and services at any time and to discontinue any product or service without notice. Customers should
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TI warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with TI’s standard
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TI assumes no liability for applications assistance or customer product design. Customers are responsible for their products and
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TI does not warrant or represent that any license, either express or implied, is granted under any TI patent right, copyright, mask work right,
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