Page 1
XT2116
XT2116
Fast Turn-on Asymmetric Thyristor
Advance Information
Replaces March 1998 version, DS4674-2.2 DS4674-3.0 January 2000
APPLICATIONS
■ Pulse Modulators
■ Laser Diode Triggering
■ Capacitor Discharge Applications
FEATURES
■ The XT2116 is Asymmetrical Thyristor in which the
reverse voltage capability has been sacrificed to enable a
high forward blocking characteristic combined with
excellent turn-on performance.
■ Designed for rapid and efficient switching of high
current pulses.
VOLTAGE RATINGS
Type Number Max. Rise Time
t
r
(T
= 25˚C)
case
ns
XT2116 - 1601
XT2116 - 1401
XT2116 - 1201
XT2116 - 1001
XT2116 - 801
100
120
120
140
160
Repetitive Peak Voltage
V
DRM
V
1600
1400
1200
1000
800
KEY PARAMETERS
V
DRM
I
T(AV)
I
TSM
dIdt 2000A/
dV/dt 300V/µs
t
on
Outline type code: SO28.
See Package Details for further information.
Peak Working Voltages
V
RRM
V
< 2
< 2
< 2
< 2
< 2
*
V
DWM
V
1600
1400
1200
1000
800
1600V
50A
800A
µs
350ns
V
*
RWM
V
< 2
< 2
< 2
< 2
< 2
CURRENT RATINGS
Symbol Parameter Conditions UnitsMax.
I
T(AV)
I
T(RMS)
I
Mean on-state current
RMS value
T
Continuous (direct) on-state current
Half wave resistive load, T
= 80oC79A
T
case
T
= 85oC68A
case
= 80oC50A
case
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Page 2
XT2116
SURGE RATINGS
Symbol
I
TSM
2
tI
I
Parameter
Surge (non-repetitive) forward current
2
t for fusing 3200 A2s
10ms half sine; T
Conditions Max. Units
= 125oC
case
THERMAL AND MECHANICAL DATA
Symbol Parameter
th(j-c)
th(c-h)
T
vj
T
stg
- 3.5
Thermal resistance - junction to caseR
Thermal resistance - case to heatsinkR
Virtual junction temperature
Storage temperature range
Mounting torque
d.c.
Mounting torque 3.5Nm
with mounting compound
On-state (conducting) - 125
* Recommended value.
Conditions Min. Max. Units
DYNAMIC CHARACTERISTICS
800 A
- 0.35
0.25-
-55 125
*
4.0 Nm
o
C/W
o
C/W
o
o
C
C
T
= 25˚C unless otherwise stated.
case
ParameterSymbol Conditions
V
TM
I
RRM/IDRM
Maximum on-state voltage At IT = 100A
Peak reverse and off-state current At V
RRM/VDRM
dV/dt Maximum linear rate of rise of off-state voltage Tj = 125oC, To V
Half sine wave of 2µs, Tj = 125˚C
Gate source 20V, 10Ω. tr = 160ns
I
L
I
H
t
d
q
†
Available to 10µs.
Latching current -
Holding current -
Delay time VD = 400V, gate source = 500mA, tr = 50ns
I
Circuit commutated turn-off timet
= 25A, VRM = 0V, VDR = V
T
R
= 47Ω, dV/dt = 100V/µs.
GK
, RGK = 47Ω
DRM
DWM
, T
=120˚C,
case
Typ. Max. Units
-V
2.0
- 10/10 mA
- 300 V/µs
- 2000 A/µsRate of rise of on-state currentdI/dt
45 - mA
35 - mA
- 250 ns
†
-
µs120
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Page 3
GATE TRIGGER CHARACTERISTICS AND RATINGS
T
= 25˚C unless otherwise stated.
case
XT2116
V
GT
I
GT
V
FGM
V
RGM
I
FGM
P
GM
G(AV)
*
Recommended trigger current not less than 500mA, tr < 50ns.
Gate trigger voltage V
Gate trigger current
Peak forward gate voltage - - 40 V
Peak reverse gate voltage
Peak forward gate current -
Peak gate power Average gate power
ConditionsParameterSymbol
= 12V
DWM
V
= 12V
DWM
Typ.
-
Max.
Units
0.9 3.0 V
- 100* mA
-10V
-10A
-40W
-P
-10W
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Page 4
XT2116
PACKAGE DETAILS
For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
Collector Hex. 17.35mm AF max
Cathode Ø4.0
Gate Ø1.53
min
24
11.5
Thread 1/4 in 28 UNF 2A
Nominal weight: 14.5g
Package outline type code: SO28
http://www.dynexsemi.com
e-mail: [email protected]
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: 00-44-(0)1522-500500
Fax: 00-44-(0)1522-500550
DYNEX POWER INC.
Unit 7 - 58 Antares Drive,
Nepean, Ontario, Canada K2E 7W6.
Tel: 613.723.7035
Fax: 613.723.1518
Toll Free: 1.888.33.DYNEX (39639)
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-
Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as
a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such
methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication
or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury
or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.
All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
4/4
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SALES OFFICES
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These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2000 Publication No. DS4674-3 Issue No. 3.0 January 2000
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM
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