Integrated Power Management/Audio Codec
Silicon Revision 1.0
Version F
Data Manual
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Literature Number: SWCS053F
September 2010–Revised May 2012
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Recipient agrees to not knowingly export or re-export, directly or
indirectly, any product or technical data (as defined by the U.S., EU, and
other Export Administration Regulations) including software, or any
controlled product restricted by other applicable national regulations,
received from Disclosing party under this Agreement, or any direct
product of such technology, to any destination to which such export or
re-export is restricted or prohibited by U.S. or other applicable laws,
without obtaining prior authorisation from U.S. Department of Commerce
and other competent Government authorities to the extent required by
those laws. This provision shall survive termination or expiration of this
Agreement.
According to our best knowledge of the state and end-use of this
product or technology, and in compliance with the export control
regulations of dual-use goods in force in the origin and exporting
countries, this technology is classified as follows:
US ECCN: EAR99
EU ECCN: EAR99
And may require export or re-export license for shipping it in compliance
with the applicable regulations of certain countries.
5-32Voice Uplink Frequency Response with F
5-33Voice Uplink Frequency Response with F
5-34Voice Uplink Frequency Response with F
5-35Voice Uplink Frequency Response with F
= 8 kHz (Frequency Range 0 to 600 Hz) .................................. 80
S
= 8 kHz (Frequency Range 3000 to 3600 Hz) ............................ 81
S
= 16 kHz (Frequency Range 0 to 600 Hz) ................................ 81
S
= 16 kHz (Frequency Range 6200 to 7000 Hz) .......................... 81
5-11Digital Voice Filter RX Electrical Characteristics with F
5-12Digital Voice Filter RX Electrical Characteristics with F
5-13Boost Electrical Characteristics vs FSFrequency (F
5-14Boost Electrical Characteristics vs FSFrequency (F
The TPS65951 device is a power-management IC for mobile cellular handsets powered by a Li-ion, Li-ion
polymer, or cobalt-nickel-manganese cell battery. It can be connected to an application processor and/or a
modem. This optimized power-management IC is designed to support the specific power requirements of
the OMAP processor devices. The TPS65951 contains several buck converters, low dropout (LDO)
regulators, battery charger interface, and a host of other features and functions. The audio portion of the
TPS65951 is an entire audio module with audio codecs, digital filters, input preamplifiers/amplifiers, and
class D output amplifiers.
This TPS65951 Data Manual presents the electrical and mechanical specifications for the TPS65951
device. It covers the following topics:
•A description of the TPS65951 terminals: assignment, multiplexing, electrical characteristics, and
functional description (see Section 2)
•A presentation of the electrical characteristic requirements: maximum and recommended operating
conditions, digital I/O characteristics (see Section 3)
•The clock specifications: clock slicer, input and output clocks (see Section 4)
•The audio/voice module with the electrical characteristics and the application schematics for the
downlink and uplink path (see Section 5)
•The power module including the power provider, power references, power control, the power
consumption, and the power management with the sequence on and off (see Section 6)
•The timing requirements and switching characteristics (ac timings) of the interfaces (see Section 7)
•The battery charger interface (see Section 8)
•A description of different modules: MADC and LED drivers (see Section 9 and Section 10)
•The deboucing time (see Section 11)
•A description of the external components for the application schematics (see Section 12)
•The thermal resistance characteristics, device nomenclature, and mechanical data about the available
packaging (see Section 13)
•A glossary of acronyms and abbreviations used in this data manual (see Section 14)
1
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Check for Samples: TPS65951
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date. Products conform to
specifications per the terms of the Texas Instruments standard warranty. Production
processing does not necessarily include testing of all parameters.
SWCS053-001
Power Subchip (A-D)
Power analog
Power digital
Auxiliary Subchip (A-D)
Audio subchip (A-D)
Interface Subchip(D)
AUDIO digita l
MADCTOP
BCITOP
BCI analog
USB Subchip (A-D)
Card Det 1
Card Det 2
GPIO
TAP
OCP
RTC
RFID
PMC master
PMC slave
LED digital
LED analog
LEDTOP
Device
Clocks
Digital signal(s)
Analog signal(s)
PCM (4)
TDM (4)
StartADC
LedSync
ULPI (12)
UART (2)
Clocks
OCP
SIH_INT
TAP
OCP
Clocks
SIH_INT
Clo cks
TAP
I2C A pad
I2C B pad
Clk In/Out
GPIO pad
SHIFTERS
SIH_INT
OCP
TAP
Clocks
SIH_INT
OCP
TAP
TAP
EEprom
CLED
PIH
Clock
generator
SIH
AUDIO
analog
Audio
PLL
Wrapper
digital
Audio RX amplifiers
Mic amplifiers
Analog volume control
D/A converters
A/D converters
Differential vibrator
(1) To avoid reflection on this pin due to impedance mismatch, a serial resistance of 33 Ω needs to be added.
(2) VDD rail used as bias in ESD protection during functional mode.
(3) AGND is used as ESD Ground for all PADs.
(4) PUs/PDs are enabled when TPS65952 is in any other state than NO SUPPLY
(3)
LEVELSTRENGTH
RL[5](mA)[7]
MIN TYP MAX MIN TYP MAX
(4)
PD[6] (kΩ)
(4)
2.2.1ESD Electrical Parameters
ESD conditions for CDM and HBM listed in Table 2-2.
JTAG.TDOJTAG test data outputI/O
GPIO.1/CD2GPIO1/card detection 2I/OL9GPIO.1IPDFloating
JTAG.TMSJTAG test mode stateI
GPIO.2GPIO2I/OJ3GPIO.2IPDFloating
TEST1TEST1 pin used in testI/O
GPIO.15GPIO15I/OL10GPIO.15IPDFloating
TEST2TEST2 pin used in testI/O
GPIO.6GPIO6I/OK3GPIO.6IPDFloating
PWM0Pulse width driver 0O
TEST3TEST3 pin used in testI/O
CLKOK
STPHigh-speed USB stopIK10STPIPUFloating
GPIO.9GPIO.9I/O
DIRHigh-speed USBOJ10DIROFloating
direction
GPIO.10GPIO.10I/O
NXTHigh-speed USB nextOJ11NXTOFloating
GPIO.11GPIO.11I/O
DATA0High-speed USB Data0I/OH11DATA0OFloating
UART4.TXDUART4.TXDI
DATA1High-speed USB Data1I/OH10DATA1OFloating
UART4.RXDUART4.RXDO
DATA2High-speed USB Data2I/OG8DATA2OFloating
DATA3High-speed USB Data3I/OH9DATA3OFloating
GPIO.12GPIO.12I/O
DATA4High-speed USB Data4I/OF9DATA4OFloating
GPIO.14GPIO.14I/O
DATA5High-speed USB Data5I/OF8DATA5OFloating
GPIO.3GPIO.3I/O
DATA6High-speed USB Data6I/OE10DATA6OFloating
GPIO.4GPIO.4I/O
DATA7High-speed USB Data7I/OE11DATA7OFloating
GPIO.5GPIO.5I/O
(1) This column provides the connection when the associated feature is not used or not connected. When there is pin multiplexing, we
consider that all functions on the multiplexed pin are not used. But even if all functions are not used, we have to consider the
configuration by default.
Special criteria: For audio features input, use capacitor to ground with a 100-nF typical value capacitor.
Not Applicable: When the associated feature is mandatory for the good working of TPS65951.
(2) Signal not functional indicates that no signal is present on the pad after a release reset.
(3) The signal VPRECH must be connected with the CPRECH capacitor to GND.
(4) VIO internal oscillator is used even if VIO output is not used; therefore, VIO has to be connected to VBAT.
VBUS inputs-220V
Storage temperature range–55125°C
Ambient temperature range–4085°C
Junction temperature (TJ)Absolute maximum rating–40150°C
Junction temperature (TJ)For parametric compliance–40125°C
Ambient temperature forWith max 125°C as Junction temperature (TJ)–4085°C
parametric compliance
DP, DM, ID high voltage shortDP, DM, or ID pins short circuited to VBUS5.25V
circuitsupply, in any mode of device operation,
DP, DM, ID low voltage shortDP, DM, or ID pins short circuited to GND in0V
circuitany mode of device operation, continuously for
(1) The product will have negligible reliability impact if voltage spikes of 5.2 V occur for a total duration (cumulative over lifetime) of 10
milliseconds.
(2) Except VBAT input pads and VBUS pad.
(3) Supply equals the reference level listed in Table 2-1 for each pin.
(1)
(2)
Where supply represents the voltage applied to–0.31.0 × Supply +V
the power supply pin associated with the0.3
(3)
input
continuously for 24 hours
24 hours
05V
3.2Minimum Voltages and Associated Currents
Table 3-2. VBAT Min Required Per VBAT Ball and Associated Maximum Current
(1) Min value depends on board conditions, and can be computed with IBIS-models.
(2) Max rise/fall times valid for high drive settings and max load of 20 pF.
The TPS65951 includes several I/O clock pins. The TPS65951 has two sources of high-stability clock
signals: the external high-frequency clock (HFCLKIN) input and an on-board 32-kHz oscillator (optionally,
an external 32-kHz signal can be provided). Figure 4-1 shows the clock overview.
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4.1Features
The TPS65951 accepts two sources of high-stability clock signals:
•32KXIN/32KXOUT: on-board 32-kHz crystal oscillator (optionally, an external 32-kHz input clock can
be provided)
•HFCLKIN: an external high-frequency clock (19.2, 26, or 38.4 MHz)
The TPS65951 has the capability to provide:
•32KCLKOUT digital output clock
•HFCLKOUT digital output clock with the same frequency as HFCLKIN input clock
The clock slicer is disabled by default and enabled when the CLKEN PAD is high. The slicer transforms
the HFCLKIN clock input signal into a squared clock signal used internally by the TPS65951 and also
outputs it for external use. The HFCLKIN input signal can be:
•A sinusoid with peak-to-peak amplitude varying from 0.3 to 1.45 V
•A square-wave clock signal with maximum amplitude of 1.85 V. In the case of a square-wave clock
SWCS053F –SEPTEMBER 2010–REVISED MAY 2012
Figure 4-2. Clock Slicer Block Diagram
signal, the slicer will be configured in bypass or power-down mode (see Section 4.2.1).
The HFCLKIN input clock frequency must be 19.2, 26, or 38.4 MHz.
4.2.1Modes of Operation
There are four different modes programmable by register. By default, the slicer is in a high-performance
application mode.
4.2.1.1Bypass Mode (BP)
In BP mode which overrides all the other modes, the input signal is directly connected to the output
through some buffers. The input is a rail-to-rail square wave.
4.2.1.2Power-Down Mode (PD)
During PD mode if bypass mode is not active, the cell does not consume any current if bypass mode is
not active.
4.2.1.3Low-Power Application Mode (LP)
In LP mode, the input sine wave is converted to a CMOS signal (square wave) with low-power
consumption.
4.2.1.4High-Performance Application Mode (HP)
In HP mode, the input sine wave is converted to a CMOS signal (square wave). It has lower duty cycle
degradation and input-to-output delay in comparison to the low-power mode, but it consumes more
current. The drive of the squaring inverter is increased by connecting additional inverters in parallel.
Details can be found in the clock slicer electrical characteristics table (see Table 4-1).
HFCLKIN stands for high frequency input clock. It can be either a square- or a sine-wave input clock. If a
square-wave input clock is provided, it is recommended to switch the block to bypass mode when possible
to avoid loading the clock (see Section 4.2).
When a device needs a clock signal other than 32.768 kHz, it makes a clock request and activates the
CLKREQ pin. As a result, the TPS65951 immediately sets CLKEN to 1 to warn the clock provider in the
system about the clock request. Then, the TPS65951 opens a gated clock and a high-frequency output
clock signal is available through the HFCLKOUT pin. The output drive of HFCLKOUT is programmable
(low drive (MISC_CFG[CLK_HF_DRV] = 0) max load 20 pF, high drive (MISC_CFG[CLK_HF_DRV] = 1)
maximum load 30 pF), by default it is programmed to support low drive.
CLKREQ has a weak pulldown resistor to support the wired-OR clock request.
Figure 4-4 shows an example of the wired-OR clock request.
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Figure 4-4. Example of Wired-OR Clock Request
Note that the timer default value must be the worst case (10 ms) for the clock providers. For legacy or
workaround support, the signal NSLEEP1 can also be used as a clock request even if it is not its primary
goal. By default, this feature is disabled and must be enabled individually by setting the register bits
associated with each signal.
Table 4-3 details the input clock electrical characteristics of the HFCLKIN input clock.
Frequency19.2, 26, or 38.4MHz
Start-up timeLP / HP (sine wave)4μs
Input dynamic rangeV
Current consumptionHP235
Harmonic content of input signal (with 0.7-VPPamplitude):LP / HP (sine wave)–25dBc
2nd component
VIHVoltage input high
VILVoltage input low
(1) Bypass input max voltage is the same as the maximum voltage provided for the I/O interface (IO.1P8V).
(1)
(1)
LP / HP (sine wave)0.30.71.45
BP / PD (square wave)01.85
LP175
BP / PD39nA
BP (square wave)0.65 ×V
BP (square wave)0.35 ×V
SLICER
MINTYPMAX
IO.1P8
Table 4-4 details the input clock timing requirements of the HFCLKIN input clock when the source is a
square wave.
Table 4-4. HFCLKIN Square Input Clock Timing Requirements with Slicer in Bypass
IO.1P8
PP
(1)
μA
NAMEPARAMETERDESCRIPTIONMINTYPMAXUNIT
CH01/t
CH1t
CH3t
CH4t
C(HFCLKIN)
W(HFCLKIN)
R(HFCLKIN)
F(HFCLKIN)
Frequency, HFCLKIN19.2, 26, or 38.4MHz
Pulse duration, HFCLKIN low or high0.45 × t
Rise time, HFCLKIN05ns
Fall time, HFCLKIN05ns
C(HFCLKIN)
0.55 × t
C(HFCLKIN)
Figure 4-5. HFCLKIN Squared Input Clock
4.3.332-kHz Input Clock
A 32.768-kHz input clock (often abbreviated to 32-kHz) generates the clocks for the RTC. It has a low-jitter
mode where the current consumption increases for lower jitter. It is possible to use the 32-kHz input clock
with either an external crystal or clock source. Depending on the mode chosen, the 32K oscillator is
configured as being either:
•An external 32.768-kHz crystal through the 32KXIN/32KXOUT balls (see Figure 4-6). This
configuration is available for the master mode only (for more details, see Section 7).
•An external square/sine wave of 32.768 kHz through 32KXIN with amplitude equal to 1.8 or 1.85 V
(see Figure 4-8, Figure 4-9). This configuration is available for the master and slave modes (for more
details, see Section 7).
ns
4.3.3.1External Crystal Description
Figure 4-6 shows the 32-kHz oscillator block diagram with crystal in master mode.
NOTE: Switches close by default and open only if register access enables the very-low-power mode when VBAT < 2.7 V.
Figure 4-6. 32-kHz Oscillator Block Diagram In Master Mode With Crystal
CXIN and CXOUT represent the total capacitance of the PCB and components, excluding the crystal.
Their values depend on the datasheet of the crystal, also the internal capacitors and the parallel capacitor.
The frequency of the oscillations depends on the value of the capacitors. The crystal must be in the
fundamental mode of operation and parallel resonant.
NOTE
For the values of CXIN and CXOUT, see Table 12-1, TPS65951 External Components.
Table 4-5 summarizes the required electrical constraints.
Table 4-5. Crystal Electrical Characteristics
PARAMETERMINTYPMAXUNIT
Parallel resonance crystal frequency32.768kHz
Input voltage, Vin (normal mode)1.01.31.55V
Internal capacitor on each input (Cint)81012pF
Parallel input capacitance (Cpin)1pF
Nominal load cap on each oscillator input CXIN and CXOUT
Pin to pin capacitance1.61.8pF
(1)
CXIN = CXOUT = Cosc × 2 – (CintpF
+ Cpin)
(1) Nominal load capacitor on each oscillator input defined as CXIN = CXOUT = Cosc × 2 – (Cint + Cpin). Cosc is the load capacitor
Crystal ESR
Crystal shunt capacitance, C
Crystal tolerance at room temperature, 25°C–3030ppm
Crystal tolerance versus temperature range (–40°C to 85°C)–200200ppm
Maximum drive power1μW
Operating drive level0.5μW
Crystal quality factor13k54k
(2) The crystal motional resistance Rm relates to the equivalent series resistance (ESR) by the following formula:
(2)
O
Measured with the load capacitance specified by the crystal manufacturer. In fact, if CXIN = CXOUT = 10 pF, then CL= 5 pF. Parasitic
capacitance from the package and board must also be taken in account.
90kΩ
1pF
When selecting a crystal, the system designer must consider the temperature and aging characteristics of
a crystal versus the user environment and expected lifetime of the system.
Table 4-6 and Table 4-7 list the switching characteristics of the oscillator and the input requirements of the
32.768-kHz input clock. Figure 4-7 shows the crystal oscillator output in normal mode.
Table 4-6. Base Oscillator Switching Characteristics
NAMEPARAMETER DESCRIPTIONMINTYPMAXUNIT
f
P
t
SX
I
DDA
I
DDQ
Oscillation frequency32.768kHz
Start-up time, all conditions500ms
Start-up tine, 25°C360
Active current consumptionHigh jitter mode1.8
Frequency, 32 kHz32.768kHz
Pulse duration, 32 kHz low or high0.40 × t
C(32KHZ)
0.60 × t
C(32KHZ)
Figure 4-7. 32-kHz Crystal Input
4.3.3.2External Clock Description
Figure 4-8 shows the 32-kHz oscillator block diagram with a 32.768-kHz square- or sine-wave signal in
master and slave modes. Figure 4-9 shows an external clock source when the oscillator is configured in
bypass mode. Thus, there are two configurations:
•A square- or sine-wave input can be applied to the 32KXIN pin with amplitude of 1.85 or 1.8 V. The
32KXOUT pin can be left floating. This configuration, showed in Figure 4-8, is used if no charge is
applied on the 32KXOUT pin.
•The oscillator is in bypass mode and a square-wave input can be applied to the 32KXIN pin with
amplitude of 1.8 V. The 32KXOUT pin can be left floating. This configuration, shown in Figure 4-9, is
used if the oscillator is in bypass mode.
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(1) Switches close by default and open only if register access enables the very-low-power mode when VBAT < 2.7 V.
Figure 4-8. 32-kHz Oscillator Block Diagram Without Crystal Option 1
Input capacitance283542pF
On-chip foot capacitance to GND on each input (see Figure 4-8, Figure 4-9)81012pF
Square-/sine-wave amplitude in bypass mode or not1.5
Voltage input high, square wave in bypass mode
Voltage input low, square wave in bypass mode
(1)
0.65 ×V
VBRTC
(2)
(1)
0.35 ×V
VBRTC
V
(1) Bypass input max voltage is the same as the maximum voltage provided for the I/O interface. The input buffer is supplied by VBRTC,
but it is supported up to IO.1P8. Because the input buffer is supplied VBRTC, VIH and VIL are relative to VBRTC.
(2) Bypass input max voltage is the same as the maximum voltage provided for the I/O interface. The input buffer is supplied by VBRTC,
but it is supported up to IO.1P8. Because the input buffer is supplied VBRTC, VIH and VIL are relative to VBRTC.
Table 4-9 details the input requirements of the 32-kHz square-wave input clock.
The TPS65951 device has an internal 32.768-kHz oscillator connected to either an external 32.768-kHz
crystal through the 32KXIN/32KXOUT balls or an external digital 32.768-kHz clock through the 32KXIN
input (see Figure 4-11). The TPS65951 device also generates a 32.768-kHz digital clock through the
32KCLKOUT pin and can broadcast it externally to the application processor or any other devices. The
32KCLKOUT clock is broadcast by default in the TPS65951 ACTIVE state.
The 32.768-kHz clock (or signal) is also used to clock the RTC (real-time clock) embedded in the
TPS65951. The RTC is not enabled by default. It is up to the host processor to set the correct date and
time and to enable the RTC functionality.
The 32KCLKOUT output buffer can drive several devices (up to 40-pF load). At start-up, the 32.768-kHz
output clock (32KCLKOUT) must be stabilized (frequency/duty cycle) prior to the signal output (description
in TRM 3.3.2.2 32-kHz Oscillator Stabilization).
Table 4-10 summarizes the output clock electrical characteristics.
Load: 10 pF15.5
Rise time, HFCLKOUT, High Drive
Load: 10 pF0.52.9
Load: 20 pF15.0
Fall time, HFCLKOUT, Low Drive
Load: 5 pF0.53.5
Load: 10 pF15.1
Rise time, HFCLKOUT, High Drive
Load: 10 pF0.52.7
Load: 20 pF14.7
(1)
(2)
(1)
(2)
Figure 4-13 shows the HFCLKOUT output clock waveform and Figure 4-15 shows the HFCLKOUT
behavior.
ns
ns
Figure 4-13. HFCLKOUT Output Clock
4.4.3Output Clock Stabilization Time
Figure 4-14 shows the 32KCLKOUT and HFCLKOUT clock stabilization time.
NOTE: Tstartup, Delay1, Delay2, Delay3 depend on the boot mode (see Section 6.5, Power Management)
Figure 4-14. 32KCLKOUT and HFCLKOUT Clock Stabilization Time
In Figure 4-15, HFCLKIN is the input signal of the clock slicer coming from an external source.
HFCLKOUT is the output of the clock slicer; a squared clock signal that is present after the propagation
delay of the clock slicer (for numerical values, see Table 4-1).
All output stages of the downlink (except Class-D of the Hands-Free) are powered by VINTANA2.
Characteristics are given for a VBAT higher than 3.0 V (involving VINTANA2 output level equal 2.75 V).
When VBAT is in the range of 2.7 to 3.0 V (VINTANA2 = 2.5 V), only functionality is ensured.
5.1.1Earphone Output
5.1.1.1Earphone Output Characteristics
Analog signals from the audio and/or voice interface are fed to the earphone amplifier. This amplifier with
different gains provides a full differential signal on terminals EARP and EARM. Figure 5-2 shows the
earphone amplifier. Table 5-1 summarizes the earphone output characteristics.
5.1.1.2External Components and Application Schematics
Figure 5-3 shows a simplified earphone speaker schematic.
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Figure 5-3. Earphone Speaker
NOTE
For the component values, see Table 12-1, TPS65951 External Components.
5.1.28-Ω Stereo Hands-Free
The digital signal from the audio and/or voice interface is fed to two class D amplifiers. These 8-Ω speaker
amplifiers provide a stereo differential signal on terminal pairs (IHF.RIGHT.P, IHF.RIGHT.M) and
(IHF.LEFT.P, IHF.LEFT.M).
VBAT voltage3.03.64.6V
Load impedance6832Ω
Gain range
Absolute gain error–11dB
Gain variation with frequency(Audio path, Fs = 48 kHz,
Maximum output power (load impedance = 8 Ω)VBAT > 3.6 V400mW
Peak-to-peak differential output voltageVBAT > 3.6 V (0 dBFs)4.455.05.6V
Total harmonic distortion (load impedance = 8 Ω, gain setting = 0
dB)At –10 dBFs–60
(VBAT > 3.6 V)
Total harmonic distortion (load impedance = 8 Ω, (VBAT > 4.2 V)2 dBFs–60–40dB
Idle channel noise (20 Hz to 20 kHz, A-weighted)0 dB gain–88dBFs
PSRR (input signal 1 kHz sine, 300 mVPP GSM ripple at 217 HzFrom VBAT7580dB
with 10-μs rise/fall times, at 12.5% duty cycle)
Efficiency
Power dissipationPower on load = 400 mW175mW
Idle current consumption on VBATWithout input signal6mA
Clock frequency for the ramp generation384426.6kHz
I
DDQ
(1) Audio digital filter = –62 dB to 0 dB (1-dB step) and 0 dB to 12 dB (6-dB step)
(1)
currentAt 25°C0.6μA
Voice digital filter = –36 dB to 12 dB (1-dB step)
ARXPGA (volume control) = –24 dB to 12 dB (2-dB steps)
Output driver = 10.4 dB
Audio path–75.634.4dB
Voice path–49.634.4
F = 20 Hz to 20 kHz–0.50.5dB
44.1 kHz)
VBAT > 4.0 V700
VBAT > 4.0 V (2 dBFs)5.576.257
At 0 dBFs–60–40dBFs
At –20 dBFs–45
At –60 dBFs–20
Power on load = 400 mW70%
Load impedance = 8 Ω
Load impedance = 8 Ω
PP
5.1.2.1.1 Short-Circuit Protection
There is short-circuit protection for hands-free amplifiers to limit power dissipation to 1.2 W. The shortcircuit protection can be disabled by register (PMBR2[3], CLASSD_SCD_DIS).
•CLASSD_SCD_DIS = 0 (default): Class-D short-circuit protection is enabled. If a short-circuit is
detected, the short-circuit detection block switches off the hands-free speakers output stages. A
software restart is needed to restart the Class-D. No interruption is generated.
•CLASSD_SCD_DIS = 1: Class-D short-circuit detection is disabled.
5.1.2.2External Components and Application Schematics
Figure 5-6 shows a simplified 8-Ω stereo hands-free schematic.
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Figure 5-6. 8-Ω Stereo Hands-Free
For the component values, see Table 12-1, TPS65951 External Components.
For ferrite bead, choose one with high impedance at high frequencies, but very low impedance at low
frequencies. Ferrite bead component examples are listed in the external components table, Table 12-1.
Figure 5-7 shows the equivalent circuit for the ferrite bead.
Analog signal from the audio and/or voice interface is fed to two single-ended headset amplifiers.
There are two configurations:
•Stereo single-ended mode: Left and right headset amplifiers with different gains (–6 dB, 0 dB, 6 dB)
provide the stereo signal on terminals HSOL and HSOR. A pseudo-ground is provided on terminal
VMID to eliminate external capacitors.
•Stereo single-ended mode ac-coupled: Left and right headset amplifiers with different gains (–6 dB, 0
dB, 6 dB) provide the stereo signal on terminals HSOL and HSOR. The external capacitor is needed to
eliminate the dc component of the signal.
SWCS053F –SEPTEMBER 2010–REVISED MAY 2012
Figure 5-7. Ferrite Bead: Equivalent Circuit
5.1.3.1Headset Output Characteristics
Figure 5-8 shows the headset amplifier. Table 5-3 summarizes the headset output characteristics.
Figure 5-8. Headset Amplifier
Figure 5-9 shows the use case for an external high voltage driver connected to the headset output. The
external high voltage driver for actuator is assumed to have analog input and connected to the left headset
driver. To maintain headset driver stability, some guidelines related to the external load should be followed
as shown below. An external serial resistor may be needed in case of large capacitive load.
Table 5-5. Output Characteristics Headset 4-Wire Stereo Jack With External FET
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
RsbCb < 200 pF0Ω
Cb = 100 nF300
Cb = 1 μF500
Rb+Rsb2.22.7kΩ
Cs2247μF
The input capacitors and output resistors form a high-pass
filter with the corner frequency = 1/(2πR
Rs (serial resistance) needed to ensure16 Ω< 2 nF10Ω
HS amplifier stability and no distortion due24 Ω15
to the parasitic diode of the external FET32 Ω20
For other values regarding the components, see Table 12-1, TPS65951 External
Components.
5.1.4Headset Pop-Noise Attenuation
Pop noise is due to the audio output amplifier being switched on. Although the speaker is ac-coupled
through an external capacitor, the sharp rise time given by the activation of the amplifier causes a large
spike to propagate to the speakers. Pop attenuation is achieved through a precharge and discharge of the
external coupling capacitor.
The antipop system using an internal current generator controlling the ramp of charge or discharge is
implemented for the headset output. The pop-noise effect can be dramatically reduced by an external FET
controlled by a 1.8-V output signal (GPIO.6 pin).
Figure 5-14 shows the headset pop-noise diagram. Table 5-7 summarizes the headset pop-noise
These amplifiers provide a stereo signal on terminals PreD.LEFT and PreD.RIGHT to drive the external
class D amplifier. These terminals are available if a stereo, single-ended, ac-coupled headset is used.
Absolute gain error–11dB
Peak-to-peak output voltage (0 dBFs)Default gain
Total harmonic distortionAt 0 dBFs–80–70dB
Default gain
Load > 10 kΩ // 50 pFAt –20 dBFs–70–65
Idle channel noise (20 Hz to 20 kHz, A-weighted)
SNR (A-weighted over 20-kHz bandwidth)At 0 dBFs8088dB
Default gain
Output PSRR (for all gains)20 Hz to 4 kHz8090dB
(1) Audio digital filter = –62 dB to 0 dB (1-dB step) and 0 dB to 12 dB (6-dB step)
(2) The default gain setting assumes the ARXPGA has 0 dB gain setting (volume control) and output driver at 0 dB gain setting.
(1)
(2)
(2)
Voice digital filter = –36 dB to 12 dB (1-dB step)
ARXPGA (volume control) = –24 dB to 12 dB (2-dB steps)
Output driver = –6 dB, 0 dB, 6 dB
Audio path–9230dB
Voice path–6630
(2)
1.5V
At –6 dBFs–74–69
At –60 dBFs–30–25
Default gain
(2)
–90–85dB
Load = 10 kΩ
At –60 dBFS30
20 Hz to 20 kHz7080
PP
5.1.5.2External Components and Application Schematics
Figure 5-15 shows a simplified schematic for the external class D predriver.
NOTE: Input resistor (RPRor RPL) sets the gain of the external Class D. For TPS2010D1, the gain is defined according to the
following equation:
Gain (V/V) = 2 × 150 × 103/(RPRor RPL)
RPRor RPL> 15 kΩ
Figure 5-15. Predriver for External Class D
For other values regarding the components, see Table 12-1, TPS65951 External
Components.
The digital signal from the pulse width modulated generator is fed to the Vibra H-bridge driver. The Vibra
H-bridge is a differential driver and is used to drive Vibra motors. The differential output allows dual
rotation directions.
5.1.6.1Vibra H-Bridge Output Characteristics
Table 5-9 summarizes the Vibra H-bridge output characteristics.
Figure 5-17 shows the digital audio filter downlink full path characteristics for the audio interface.
Figure 5-17. Digital Audio Filter Downlink Path Characteristics
The high-pass filter can be bypassed. It is controlled by register MISC_SET_2, address 0x49,
ARX_HPF_BYP bit.
Table 5-10 shows the audio filter frequency response relative to reference gain at 1 kHz.
Table 5-10. Digital Audio Filter RX Electrical Characteristics
PARAMETERCONDITIONSMINTYPMAXUNIT
Passband0.42F
S
(1)
S
(1)
to 0.8F
–0.250.10.25dB
(1)
S
6075dB
(1)
S
Passband ripple0 to 0.42F
Stopband0.6F
Stopband attenuationF = 0.6F
Group delay15.8/F
Linear phase–1.41.4°
(1) FSis the sampling frequency (8, 11.025, 12, 16, 22.05, 24, 32, 44.1, or 48 kHz).
S
S
μs
5.1.8Digital Voice Filter Module
Figure 5-18 shows the digital voice filter downlink full path characteristics for the voice interface.
Figure 5-18. Digital Voice Filter Downlink Path Characteristics
The global high-pass filter or only the 3rdorder high-pass filter can be bypassed (when 3rdorder HPF is
skipped, 1storder is still active). It is controlledby register MISC_SET_2, address 0x49,
VRX_3RD_HPF_BYP bit for the 3rdorder high-pass filter, and the VRX_HPF_BYP bit for the global highpass filter.
5.1.8.1Voice Downlink Filter (with Sampling Frequency at 8 kHz)
Figure 5-19 and Table 5-11 show the voice filter frequency response relative to the reference gain at 1
Figure 5-20. Voice Downlink Frequency Response FS= 16 kHz
5.1.9Boost Stage
The boost effect is used to add emphasis to low frequencies. It is used to compensate high-pass filter
created by the CR (capacitor resistor) filter of the headset (in ac-coupling configuration).
There are four modes thus three available effects with slightly different frequency responses. The fourth
setting disables the boost effect.
The following four modes are described with their equalization profile:
•Flat equalization: The boost effect is in bypass mode.
•Boost (effect) 1 / 2 / 3 modes are defined as below.
Table 5-13 and Table 5-14 include the typical values according the frequency response versus input
•AUXL (common terminal: single-ended auxiliary/FM radio left channel input)
•AUXR (common terminal: single-ended auxiliary/FM radio right channel input)
For all cases, only two analog input amplifiers can be used because two ADC are available.
The voice uplink path also includes two PDM interfaces for digital microphone. Two stereo digital
microphone interfaces are available.
The FM radio left and right channels can be connected to any of the audio output stages (for example,
earpiece, headset speakers, etc.) through a connection matrix.
5.2.1MIC Bias Module
Three bias generators provide an external voltage of 2.2 V to bias the analog microphones
(MICBIAS1.OUT, MICBIAS2.OUT, and VHSMIC.OUT terminals). The typical current is between 300 and
500 µA, depending on the microphone impedance.
Bias generators can provide an external voltage of 1.8 V to bias digital microphone, DIG.MIC.0. The
typical output current is 5 mA for each digital bias microphone.
SWCS053F –SEPTEMBER 2010–REVISED MAY 2012
Figure 5-21 shows the multiplexing for the analog and digital microphone.
For other values regarding the components, see Table 12-1, TPS65951 External
Components.
To improve the rejection, it is highly recommended to ensure a MICBIAS.GND as clean as
possible. This ground must be shared with AGND of TPS65951 and must not share with
AVSS4 which is the ground used by RX Class AB output stages.
In differential mode, adding a low-pass filter (made by RSBand CB) is highly recommended if
coupling between RX output stages and the microphone is too high (and not enough
attenuation by the echo cancellation algorithm). The coupling can come from:
•The internal TPS65951 coupling between MICBIAS1/2.OUT voltage and RX output
stages.
•Coupling noise between MICBIAS.GND and AVSS4.
In pseudodifferential mode, the dynamic resistance of the microphone improves the rejection
versus MICBIAS1/2.OUT:
PSRR = 20 × log((RB+ R
Product Folder Link(s): TPS65951
)/RB).
Dyn_mic
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NOTE
2.75 V
1.8 V
VMIC1/2.OUT
Dig mic
bias (LDO)
VRIO = 1.8 V
DIG.MIC.CLK0
BUF
DIGMIC left
Audio digital filter
Comparator
DIGMIC right
Q
S
R
0.9 V
DIG.MIC.0
Comparator
Audio digital filter
Q
Q
Q
R
S
Audio PLL
Digial mic
clock generator
50* Fs
50* Fs
SWCS053-040
DIG.MIC.CLK0
DIG.MIC.0
t
hold
t
hold
SWCS053-089
TPS65951
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SWCS053F –SEPTEMBER 2010–REVISED MAY 2012
5.2.1.2Digital MIC Bias Module Characteristics
Table 5-17. Digital Microphone Bias Module Characteristics
Table 5-18. Digital Microphone Module Characteristics (2)
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
Comparator high threshold0.5 ×0.7 × VDD_IO
Comparator low threshold0.3 ×0.5 ×
Start-up time2ms
DIG.MIC.0 (t
) from DIG.MIC.CLK0 edge4ns
HOLD
VDD_IOVDD_IO
VDD_IO
5.2.1.3Silicon MIC Module Characteristics
Based on silicon MEMS (micro-electrical-mechanical system) technology, the new microphone achieves
the same acoustic and electrical properties as conventional microphones, but is more rugged and exhibits
higher heat resistance. These properties offer designers of a wide range of products greater flexibility and
new opportunities to integrate microphones.
The silicon microphone is the integration of mechanical elements and electronics on a common silicon
substrate through microfabrication technology.
Moreover, the CMOS MEMS microphone is more like an analog IC than an ECM (classical microphone,
Electret Condenser Microphone). It is powered as an IC with a direct connection to the power supply. The
on-chip isolation between the power input and the rest of the system adds PSR to the component, making
the CMOS MEMS microphone inherently more immune to power supply noise than an ECM and
eliminating the need for additional filtering circuitry to keep the power supply line clean.
Figure 5-26 shows a schematic for the silicon microphone.
SWCS053F –SEPTEMBER 2010–REVISED MAY 2012
5.2.2Stereo Differential Input
5.2.3Headset Differential Input
Figure 5-26. Silicon Microphone
NOTE
For other values regarding the components, see Table 12-1, TPS65951 External
Components.
The stereo differential inputs (MIC.MAIN.P, MIC.MAIN.M and MIC.SUB.P, MIC.SUB.M terminals) can be
amplified by the microphone amplification stages. The amplification stage outputs are connected to the
two ADC inputs.
The headset differential inputs (HSMICP and HSMICM terminals) can be amplified by the microphone
amplification stage. The amplification stage outputs are connected to the ADC input.
The auxiliary inputs AUXL/FML and AUXR/FMR can be used as FM radio left and right stereo inputs. In
that case (because both input amplifiers are busy), the other input terminals are discarded and set to a
high impedance state. Both microphone amplification stages amplify the FM radio stereo signal. Both
amplification stage outputs are connected to the ADC input. The FM radio left and right channels inputs
can also be output through an audio output stage (mono output stage in case of mono input FM radio,
stereo output stage in case of stereo input FM radio).
5.2.4.1External Components
Figure 5-27 shows the external components on the auxiliary stereo input.
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Figure 5-27. Audio Auxiliary Input
NOTE
For other values regarding the components, see Table 12-1, TPS65951 External
Components.
5.2.5Pulse Density Modulated (PDM) Interface for Digital Microphone
The PDM interface is used as digital microphone inputs: each microphone is directly connected to the TX
filter decimator to extract the audio samples at desired accuracy and sample rate. Each digital microphone
is stereo (2 paths). The digital microphone interface is DIG.MIC.CLK (clock input to the microphone) and
DIG.MIC (PDM data output from the microphone). The appropriate frequency of DIG.MIC.CLK is
generated by the audio PLL, and the ratio between DIG.MIC.CLK and sample rate is equal to 50 (see
Figure 5-28). The PDM interface is available only when fS= 48 kHz.
The data signal output is a 3-state output from the microphone. When a falling edge DIG.MIC.CLK is
detected, the DIG.MIC is actively driven. When a rising DIG.MIC.CLK is detected, the DIG.MIC is high
impedance. The latter DIG.MIC.CLK half-cycle is reserved for stereo operation (the second microphone
receives DIG.MIC.CLK inverted).
The Σ-Δ converter inside the digital microphone produces pulse density modulated (PDM).
Digital microphone characteristics:
•PDM clock rate 2.4 MHz
•4thorder Σ-Δ converter inside the microphone component
•0 db PDM inputs involves 0dBFs data output (with default gain setting: 0 db)
Speech delayVoice path0.5ms
Gain range
Absolute gain0 dBFs at 1.02 kHz–11dB
Peak-to-peak differential input voltage (0 dBFs)For differential input1.5V
Peak-to-peak single-ended input voltage (0 dBFs)For single-ended input1.5V
Total harmonic distortion (sine wave at 1.02 kHz)At –1 dBFs–80–75dB
Idle channel noise20 Hz to 20 kHz, A-weighted, Gain = 0 dB–85–78dBFs
Crosstalk A/D to D/AGain = 0 dB–80–70dB
Crosstalk path between two microphones–70dB
Intermodulation distortion2-tone method–60dB
Input resistance differential
(1) Gain range is defined by: Preamplifier = 0 to 30 dB; Filter = 0 to 31 dB (1-dB steps)
(2) The input resistance differential depends on fine gain setting controlled only by ALC.
(1)
0 dB gain setting
0 dB gain setting
At –6 dBFs–74–69
At –10 dBFs–70–65
At –20 dBFs–60–55
At –60 dBFs–20–15
16 kHz: < 20 Hz to 7 kHz, Gain = 0 dB–90
8 kHz: P-weighted voice, Gain = 18 dB–87
16 kHz: < 20 Hz to 7 kHz, Gain = 18 dB–82
(2)
Without ALC5070kΩ
With ALC50140
061dB
PP
PP
5.2.7Microphone Amplification Stage
These stages perform the single-to-differential conversion for single-ended inputs. Two programmable
gains from 0 dB to 30 dB can be set:
•Automatic level control for main microphone or submicrophone input. The gain step is 1 dB.
•Level control by register for line-in or car-kit input, or headset microphone. The gain step is 6 dB.
The amplification stage outputs are connected to the ADC input (ADC left and right).
Figure 5-30 shows the digital audio filter uplink full path characteristics for the audio interface.
Figure 5-30. Digital Audio Filter Uplink Path Characteristics
The high-pass filter can be bypassed. It is controlled by register MISC_SET_2, address 0x49,
ATX_HPF_BYP bit.
Table 5-21 shows the audio filter frequency response relative to reference gain at 1 kHz.
Table 5-21. Digital Audio Filter TX Electrical Characteristics
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
Passband0.00050.42F
Passband gainIn region 0.0005 × FSto 0.42 × F
Stopband0.6F
Stopband attenuationIn region 0.6 × FSto 1 × F
Group delay15.8/F
(1) FSis the sampling frequency (8, 11.025, 12, 16, 22.05, 24, 32, 44.1, or 48 kHz).
S
(1)
S
(1)
–0.250.25dB
60dB
S
S
S
μs
5.2.9Digital Voice Filter Module
Figure 5-31 shows the digital voice filter uplink full path characteristics for the voice interface.
Figure 5-31. Digital Audio Filter Uplink Path Characteristics
The global high-pass filter or only the 3rdorder high-pass filter can be bypassed (when 3rdorder HPF is
skipped, 1storder is still active). It is controlled by register MISC_SET_2, address 0x49, the
VTX_3RD_HPF_BYP bit for the 3rdorder high-pass filter, and the VTX_HPF_BYP bit for the global highpass filter.
5.2.9.1Voice Uplink Filter (with Sampling Frequency at 8 kHz)
Table 5-22 shows the voice filter frequency response relative to reference gain at 1 kHz with FS= 8 kHz.
This chapter describes the electrical characteristics of the voltage regulators and timing characteristics of
the supplies digitally controlled within the TPS65951.
Figure 6-1 shows the power provider block diagram.
VAUX1ExternalLDO2.5, 2.8, 3.03.0 V3.0 V3.0 V2.5 V200 mA
VAUX2ExternalLDO1.3, 1.5, 1.7, 1.8, 1.9, 2.0, 2.1, 2.2, 2.3, 2.4, 2.5, 2.82.8 V2.8 V1.8 V1.8 V100 mA
VAUX3ExternalLDO1.5, 1.8, 2.5, 2.82.8 V2.8 V2.8 V1.5 V200 mA
VAUX4ExternalLDO0.7, 1.0, 1.2, 1.5, 1.8, 2.5, 2.81.2 V1.2 V2.8 V2.5 V100 mA
VMMC1ExternalLDO1.85, 2.85, 3.0, 3.151.85 V1.85 V3.0 V3.0 V220 mA
VMMC2ExternalLDO1.85, 2.6, 2.85, 3.0, 3.152.6 V2.6 V2.6 V2.8 V100 mA
VPLL1ExternalLDO1.0, 1.2, 1.3, 1.81.3 V1.3 V1.8 V1.8 V40 mA
VPLL2ExternalLDO0.7, 1.0, 1.2, 1.3, 1.81.2 V1.3 V1.3 V1.3 V100 mA
VDACExternalLDO1.2, 1.3, 1.81.8 V1.8 V1.8 V1.8 V70 mA
VIOExternalSMPS1.8, 1.851.8 V1.8 V1.8 V1.8 V700 mA
VDD1ExternalSMPS0.6 ... 1.51.3 V1.3 V1.2 V1.2 V1400 mA
VDD2ExternalSMPS0.6 ... 1.51.3 V1.3 V1.2 V1.2 V600 mA
VINTANA1InternalLDO1.51.5 V1.5 V1.5 V1.5 V50 mA
VINTANA2InternalLDO2.5, 2.752.75 V2.75 V2.75 V2.75 V250 mA
VINTDIGInternalLDO1.51.5 V1.5 V1.5 V1.5 V100 mA
USBCPInternal55 V5 V5 V5 V100 mA
VUSB1V5InternalLDO1.51.5 V1.5 V1.5 V1.5 V30 mA
VUSB1V8InternalLDO1.81.8 V1.8 V1.8 V1.8 V30 mA
VUSB3V1InternalLDO3.13.1 V3.1 V3.1 V3.1 V14 mA
VRRTCInternalLDO1.51.5 V1.5 V1.5 V1.5 V30 mA
VBRTCInternalLDO1.31.3 V1.3 V1.3 V1.3 V100 μA
Charge
Pump
DEPENDING ON BOOT MODE
MC027SMC027MC021SC021
(1) See Section 6.5 to understand the significance of the boot mode.
(1)
MAXIMUM
CURRENT
6.1.1VDD1 DC-DC Regulator
6.1.1.1VDD1 DC-DC Regulator Characteristics
The VDD1 DC-DC regulator is a stepdown DC-DC converter with a configurable output voltage. The
programming of the output voltage and the characteristics of the DC-DC converter are SmartReflex
compatible. The regulator can be put in sleep mode to reduce its leakage (PFM) or power-down mode
when it is not being used. Table 6-2 describes the regulator characteristics.
Input voltage range2.73.64.5V
Output voltage0.61.5V
Output voltage stepCovering the 0.6-V to 1.5-V range12.5mV
Output accuracy
(1)
Switching frequency, see Table 6-213.2MHz
Conversion efficiency
(2)
, Figure 6-2 in active mode
and Figure 6-3 in sleep mode
Output currentActive mode, output voltage = 0.6 V to 1.2 V1.2A
Ground current (IQ)Off at 30°C3μA
Short-circuit currentVIN= V
Load regulation0 < IO< I
Transient load regulation
(3)
Line regulation10mV
Transient line regulation300 mVPPac input, 10-μs rise and fall time10mV
Start-up time0.251ms
Recovery timeFrom sleep to on with constant load< 10100μs
Slew rate (rising or falling)
(4)
Output rippleActive (PWM and PSM)–1010mV
Current limit for PWM/PSM mode switch. PSM isActive mode150200mA
below this limit, and PWM is above this limit.
Overshootsoftstart5%
Output pulldown resistanceIn off mode500700Ω
External coil
External capacitor
(5)
(1) Accuracy includes all variations (line and load regulations, line and load transients, temperature, and process)
(2) VBAT = 3.8 V, VDD1 = 1.3 V, Fs = 3.2 MHz, L = 1 μH, L
(3) Output voltage needs to be able to discharge the load current completely and settle to its final value within 100 μs.
(4) Load current varies proportional to the output voltage. The slew rate is for both increasing and decreasing voltages and the maximum
load current is 1.1 A.
(5) Under current load condition step:
400 mA in 100 ns with a ±50% external capacitor accuracy or
Transient load condition can be improved to Imax/2 with a more accurate capacitor value, that is:
600 mA in 100 ns with a ±20% external capacitor accuracy.
0.6 V to < 0.8 V–6%6%
0.8 V to 1.5 V–5%5%
IO= 10 mA, Sleep82%
100 mA < IO< 400 mA85%
400 mA < IO< 600 mA80%
600 mA < IO< 800 mA75%
Active mode, output voltage = 1.2 V to 1.5 V1.4A
Sleep mode10mA
Sleep, unloaded3050
Active, unloaded, not switching300
MAX
MAX
IO= 10 mA to 400 + 10 mA,
Maximum slew rate is 400 mA/100 ns
–6550mV
2.2A
20mV
4816mV/μs
Sleep (PFM)–2%2%
Value0.711.3μH
DCR0.1Ω
Saturation current for 1.2-A operation1.8A
Saturation current for 1.4-A operation2.1
Value51015μF
ESR at switching frequency020mΩ
= 100 mΩ, C = 10 μF, ESR = 10 mΩ
DCR
When the VDD1 DC-DC converter is not used, there are no issues with current, voltage, and stress under
nominal conditions. See Table 2-3 on how to connect the VDD1/2 DC-DC converter when it is not in use.
Figure 6-2 and Figure 6-3 show the efficiency of the VDD1 DC-DC regulator in active mode and in sleep
Figure 6-3. VDD1 DC-DC Regulator Efficiency in Sleep Mode
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Product Folder Link(s): TPS65951
Device
VDD1.IN (E13)
VDD1.IN (E12)
VDD1.SW (D12)
VDD1.SW (D13)
VDD1.GND (C13)
VDD1.GND (C12)
SWCS053-054
L
VDD1
C
VDD1.OUT
VDD1.FB (D10)
TPS65951
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SWCS053F –SEPTEMBER 2010–REVISED MAY 2012
Figure 6-4. VDD1 DC-DC Application Schematic
NOTE
For the component values, see Table 12-1, TPS65951 External Components.
6.1.2VDD2 DC-DC Regulator
6.1.2.1VDD2 DC-DC Regulator Characteristics
The VDD2 DC-DC regulator is a programmable output stepdown DC-DC converter with an internal FET.
Like the VDD1 regulator, the VDD2 regulator can be placed in sleep or power-down mode and is
SmartReflex compatible. The VDD2 regulator differs from VDD1 in its current load capability. Table 6-3
describes the regulator characteristics.
Input voltage range2.73.64.5V
Output voltage0.611.5V
Output voltage stepCovering the 0.6-V to 1.5-V range,12.5mV
Output accuracy
Switching frequency
Conversion efficiency
(1)
(2)
, see Table 6-213.2MHz
(3)
, Figure 6-5 in active mode
and Figure 6-6 in sleep mode
Output current
Ground current (IQ)Off at 30°C1μA
Short-circuit currentVIN= V
Load regulation0 < IO< I
Transient load regulation
(4)
Line regulation10mV
Transient line regulation300 mVPPac input, 10-μs rise and fall time10mV
Output pulldown resistanceIn off mode500700Ω
Start-up time0.251ms
Recovery timeFrom sleep to on with constant load25100μs
Slew rate (rising or falling)
(5)
Output rippleActive (PWM & PSM)–1010mV
Current limit for PWM/PSM mode switch. PSM is150200mA
below this limit, and PWM is above this limit.
Overshootsoftstart5%
External coilDCR0.1Ω
External capacitor
(6)
(1) Accuracy includes all variations (line and load regulations, line and load transients, temperature, and process)
(2) 2 modes are available:
Mode1: VDD2 switcher uses its own RC oscillator clock (default).
Mode2: VDD2 switcher could be configured to use clock from VIO clock (based on HFCLKIN input clock).
(3) VBAT = 3.8 V, VDD2 = 1.3 V, Fs = 3.2 MHz, L = 1 μH, L
(4) Output voltage needs to be able to discharge the load current completely and settle to its final value within 100 μs.
(5) Load current varies proportional to the output voltage. The slew rate is for both increasing and decreasing voltages and the maximum
load current is 600 mA.
(6) Under current load condition step:
Imax/3 (200 mA) in 100 ns with a ±50% external capacitor accuracy or
Transient load condition can be improved to Imax/2 with a more accurate capacitor value, that is:
Imax/2 (300 mA) in 100 ns with a ±20% external capacitor accuracy.
0.6 V to < 0.8 V–6%6%
0.8 V to 1.5 V–5%5%
IO= 10 mA, Sleep82%
100 mA < IO< 300 mA85%
300 mA < IO< 500 mA80%
Active mode600mA
Sleep mode10mA
Sleep, unloaded50
Active, unloaded, not switching300
MAX
MAX
IO= 10 mA to (I
Maximum slew rate is I
/3) + 10 mA,
MAX
MAX
/3/100 ns
–6550mV
1.2A
20mV
4816mV/μs
Sleep (PFM)–2%2%
Value0.711.3μH
Saturation current900mA
Value51015μF
ESR at switching frequency020mΩ
= 100 mΩ, C = 10 μF, ESR = 10 mΩ
DCR
When the VDD2 DC-DC converter is not used, there are no issues with current, voltage, and stress under
nominal conditions. See Table 2-3 on how to connect the VDD1/2 DC-DC converter when it is not in use.
Figure 6-5 and Figure 6-6 show the efficiency of the VDD1 DC-DC regulator in active mode and in sleep
The I/Os and memory DC-DC regulator is a 700-mA stepdown DC-DC converter (internal FET) with a
choice of two output voltage settings. It supplies the memories and all I/O ports in the application and is
one of the first power providers to switch on in the power-up sequence. This DC-DC regulator can be
placed sleep or power-down mode; however, care must be taken in the sequencing of this power provider
as numerous ESD blocks are connected to this supply. Table 6-4 describes the regulator characteristics.
Table 6-4. VIO DC-DC Regulator Characteristics
PARAMETERCOMMENTSMINTYPMAXUNIT
Input voltage range2.73.64.5V
Output voltage
Output accuracy
Switching frequency
Conversion efficiency
and Figure 6-9 in sleep mode
Output current
Ground current (IQ)Off at 30°C1μA
Load regulation0 < IO< I
Line regulation10mV
Load transient and line transient (cumulated)IO= 10 mA to 150 mA in dt = 100 ns40mV
Start-up time0.251ms
Recovery timeFrom sleep to on with constant load< 10100μs
Output rippleActive (PWM & PSM)–1010mV
Current limit for PWM/PSM mode switch. PSM is150200mA
below this limit, and PWM is above this limit.
Overshootsoftstart5%
Output pulldown resistanceIn off mode500700Ω
External coilDCR0.1Ω
External capacitor
(1) This voltage is tuned according to the platform and transient requirements.
(2) ±4% accuracy includes all the variation (line and load regulation, line and load transient, temperature, process)
±3% accuracy is DC accuracy only.
(3) 2 modes are available:
Mode1: VIO switcher uses its own RC oscillator clock (default).
Mode2: VIO switcher could be configured to use clock from VIO clock (based on HFCLKIN input clock).
(4) VBAT = 3.8 V, VIO = 1.8 V, Fs = 3.2 MHz, L = 1 μH, L
(5) Typical VIO internal current consumption is 5 mA during USB data transfer.
(1)
(2)
(3)
, see Table 6-213.2MHz
(4)
Figure 6-8 in active mode
(5)
IO= 10 mA, Sleep85%
100 mA < IO< 400 mA85%
400 mA < IO< 600 mA80%
On mode700mA
Sleep mode10
Sleep, unloaded50
Active, unloaded, not switching300
MAX
IO= 150 mA to 250 mA in dt = 100 ns
IO= 250 mA to 450 mA in dt = 100 ns
600 mVPPac, input rise and fall time 10 μs
Sleep (PFM)–2%2%
Value0.711.3μH
Saturation current900mA
Value51015μF
ESR at switching frequency120mΩ
The VDAC programmable LDO regulator is a high-PSRR, low-noise, linear regulator that powers the host
processor dual-video DAC. It is controllable with registers via I2C and can be powered down. Table 6-5
describes the regulator characteristics.
Table 6-5. VDAC LDO Regulator Characteristics
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
OUTPUT LOAD CONDITIONS
Filtering capacitorConnected from VDAC.OUT to analog ground0.312.7μF
Filtering capacitor ESR20600mΩ
ELECTRICAL CHARACTERISTICS
V
IN
V
OUT
I
OUT
V
DO
(1) For the LDO characteristics to be fulfilled, a minimum of 250 mV between the LDO input and LDO output voltages is required.
(2) Accuracy includes all variations (line and load regulations, line and load transients, temperature, and process).
(3) For nominal output voltage
(4) Transient load regulation is always included in the overall accuracy of the selected output voltage option. For voltage levels that have a
Input voltage2.73.64.5V
Output voltage
(2)
Rated output currentOn mode70mA
Low-power mode5
DC load regulationOn mode: 0 < IO< I
DC line regulationOn mode, VIN= V
Turn-on timeI
The VPLL1 programmable LDO regulator is high-PSRR, low-noise, linear regulator used for the host
processor PLL supply. Table 6-6 describes the regulator characteristics.
Table 6-6. VPLL1 LDO Regulator Characteristics
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
OUTPUT LOAD CONDITIONS
Filtering capacitorConnected from VPLL1.OUT to analog ground0.312.7μF
Filtering capacitor ESR20600mΩ
ELECTRICAL CHARACTERISTICS
V
IN
V
OUT
I
OUT
V
DO
(1) For the LDO characteristics to be fulfilled, a minimum of 250 mV between the LDO input and LDO output voltages is required
(2) Accuracy includes all variations (line and load regulations, line and load transients, temperature, and process).
(3) For nominal output voltage
(4) Transient load regulation is always included in the overall accuracy of the selected output voltage option. For voltage levels that have a
Input voltage2.73.64.5V
Output voltage
(2)
Rated output currentOn mode40mA
Low-power mode5
DC load regulationOn mode: 0 < IO< I
DC line regulationOn mode, VIN= V
Turn-on timeI
The VPLL2 programmable LDO regulator is a high-PSRR, low-noise, linear regulator used for the host
processor PLL supply. Table 6-7 describes the regulator characteristics.
Table 6-7. VPLL2 LDO Regulator Characteristics
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
OUTPUT LOAD CONDITIONS
Filtering capacitorConnected from VPLL2.OUT to analog ground0.312.7μF
Filtering capacitor ESR20600mΩ
ELECTRICAL CHARACTERISTICS
V
IN
V
OUT
I
OUT
V
DO
(1) For the LDO characteristics to be fulfilled, a minimum of 250 mV between the LDO input and LDO output voltages is required
(2) Accuracy includes all variations (line and load regulations, line and load transients, temperature, and process).
(3) For nominal output voltage
(4) Transient load regulation is always included in the overall accuracy of the selected output voltage option. For voltage levels that have a
Input voltage2.73.64.5V
Output voltage
Rated output currentmA
DC load regulationOn mode: 0 < IO< I
DC line regulationOn mode, VIN= V
Turn-on timeI
(2)
On mode100
Low-power mode5
MAX
to V
INmin
= 0, CL= 1 μF (within 10% of V
OUT
INmax
at I
= I
OUT
OUTmax
)100μs
OUT
Wake-up timeFull load capability10μs
f < 10 kHz50
Ripple rejectiondB
Ground currentLow-power mode, I
Dropout voltage
(3)
Transient load regulation
Transient line regulation10mV
10 kHz < f < 100 kHz40
f = 1 MHz30
VIN= V
On mode, I
On mode, I
Low-power mode, I
Off mode at 55°C1
On mode, I
I
(4)
LOAD
Slew: 40 mA/μs
OUT
: I
MIN
+ 1 V, IO= I
OUT
OUT
OUT
– I
MAX
MAX
= 070
= I
OUTmax
= 017μA
OUT
= 1 mA20
OUT
= I
OUTmax
VINdrops 500 mV
Slew: 40 mV/μs
Overshootsoftstart3%
Pulldown resistanceDefault in off mode250320450Ω
tighter output voltage specification than the transient load regulation, then follow the output voltage specification.
The VMMC1 LDO regulator is a programmable linear voltage converter that powers the MMC slot. It
includes a discharge resistor and overcurrent protection (short-circuit). This LDO regulator can also be
turned off automatically when the MMC card extraction is detected (through one dedicated GPIO,
description in TRM). The VMMC1 LDO can be powered via an independent supply other than the battery;
for example, a charge pump. In this case, the input from the VMMC1 LDO can possibly be higher than the
battery voltage. Table 6-8 describes the regulator characteristics.
Table 6-8. VMMC1 LDO Regulator Characteristics
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
OUTPUT LOAD CONDITIONS
Filtering capacitorConnected from VMMC1.OUT to analog ground0.312.7μF
Filtering capacitor ESR20600mΩ
ELECTRICAL CHARACTERISTICS
V
IN
V
OUT
I
OUT
V
DO
(1) For the LDO characteristics to be fulfilled, a minimum of 250 mV between the LDO input and LDO output voltages is required
(2) Accuracy includes all variations (line and load regulations, line and load transients, temperature, and process).
(3) For nominal output voltage
(4) Transient load regulation is always included in the overall accuracy of the selected output voltage option. For voltage levels that have a
Input voltage2.73.65.5V
Output voltage
Rated output currentmA
DC load regulationOn mode: 0 < IO< I
DC line regulationOn mode, VIN= V
Turn-on timeI
(2)
On mode220
Low-power mode5
MAX
to V
INmin
= 0, CL= 1 μF (within 10% of V
OUT
INmax
at I
= I
OUT
OUTmax
)100μs
OUT
Wake-up timeFull load capability10μs
f < 10 kHz50
Ripple rejectiondB
Ground currentLow-power mode, I
Dropout voltage
(3)
Transient load regulation
Transient line regulation10mV
10 kHz < f < 100 kHz40
f = 1 MHz25
VIN= V
On mode, I
On mode, I
Low-power mode, I
Off mode at 55°C1
On mode, I
I
(4)
LOAD
Slew: 40 mA/μs
OUT
: I
MIN
+ 1 V, IO= I
OUT
OUT
OUT
– I
MAX
MAX
= 070
= I
OUTmax
= 017μA
OUT
= 5 mA20
OUT
= I
OUTmax
VINdrops 500 mV
Slew: 40 mV/μs
Overshootsoftstart3%
Pulldown resistanceDefault in off mode250320450Ω
tighter output voltage specification than the transient load regulation, then follow the output voltage specification.
The VMMC2 LDO regulator is a programmable linear voltage converter that powers the MMC slot 2. It
includes a discharge resistor and overcurrent protection (short-circuit). This LDO regulator can also be
turned off automatically when the MMC card extraction is detected (through one dedicated GPIO,
description in TRM). The VMMC2 LDO can be powered via an independent supply other than the battery;
for example, a charge pump. In this case, the input from the VMMC2 LDO can possibly be higher than the
battery voltage. Table 6-9 describes the regulator characteristics.
Table 6-9. VMMC2 LDO Regulator Characteristics
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
OUTPUT LOAD CONDITIONS
Filtering capacitorConnected from VMMC2.OUT to analog ground0.312.7μF
Filtering capacitor ESR20600mΩ
ELECTRICAL CHARACTERISTICS
V
IN
V
OUT
I
OUT
V
DO
(1) For the LDO characteristics to be fulfilled, a minimum of 250 mV between the LDO input and LDO output voltages is required.
(2) Accuracy includes all variations (line and load regulations, line and load transients, temperature, and process).
(3) For nominal output voltage
(4) Transient load regulation is always included in the overall accuracy of the selected output voltage option. For voltage levels that have a
Input voltage2.73.65.5V
Output voltage
Rated output currentmA
DC load regulationOn mode: 0 < IO< I
DC line regulationOn mode, VIN= V
Turn-on timeI
(2)
On mode100
Low-power mode5
MAX
to V
INmin
= 0, CL= 1 μF (within 10% of V
OUT
INmax
at I
= I
OUT
OUTmax
)100μs
OUT
Wake-up timeFull load capability10μs
f < 10 kHz50
Ripple rejectiondB
Ground currentLow-power mode, I
Dropout voltage
(3)
Transient load regulation
Transient line regulation10mV
10 kHz < f < 100 kHz40
f = 1 MHz30
VIN= V
On mode, I
On mode, I
Low-power mode, I
Off mode at 55°C1
On mode, I
I
(4)
LOAD
Slew: 40 mA/μs
OUT
: I
MIN
+ 1 V, IO= I
OUT
OUT
OUT
– I
MAX
MAX
= 070
= I
OUTmax
= 017μA
OUT
= 50 μA20
OUT
= I
OUTmax
VINdrops 500 mV
Slew: 40 mV/μs
Overshootsoftstart3%
Pulldown resistanceDefault in off mode250320450Ω
tighter output voltage specification than the transient load regulation, then follow the output voltage specification.
The VAUX1 general-purpose LDO regulator powers the auxiliary devices. The VAUX1 regulator can also
support an inductive load such as a vibrator. While operating in vibrator mode, it has the following
features:
•Programmable, register-controlled, soft-start function
•Enable via VIBRA.SYNC pin
•Programmable, register-controlled, duty cycle (PWM generator) based on a nominal 4-Hz cycle which
is derived from an internal 32-kHz clock.
Table 6-10 describes the regulator characteristics.
Table 6-10. VAUX1 LDO Regulator Characteristics
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
OUTPUT LOAD CONDITIONS
Filtering capacitorConnected from VAUX1.OUT to analog ground0.312.7μF
Filtering capacitor ESR20600mΩ
Vibrator inductive load
Vibrator load resistance
ELECTRICAL CHARACTERISTICS
V
V
I
OUT
IN
OUT
Input voltage2.73.64.5V
Output voltage
Rated output currentmA
DC load regulationOn mode: I
DC line regulationOn mode, VIN= V
Turn-on timeμs
Turn-off time5000μs
Wake-up timeFull load capability10μs
Ripple rejectiondB
Ground currentLow-power mode, I
V
DO
Dropout voltage
Transient load regulation
Transient line regulation10mV
Overshootsoftstart3%
Pulldown resistanceDefault in off mode250320450Ω
(1) For the LDO characteristics to be fulfilled, a minimum of 250 mV between the LDO input and LDO output voltages is required.
(2) Parameter not tested, used for design specification only
(3) Accuracy includes all variations (line and load regulations, line and load transients, temperature, and process).
(4) For nominal output voltage
(5) Transient load regulation is always included in the overall accuracy of the selected output voltage option. For voltage levels that have a
tighter output voltage specification than the transient load regulation, then follow the output voltage specification.
(2)
Connected from VAUX1.OUT to analog ground70700μH
(2)
(3)
On mode200
Low-power mode5
= I
OUT
I
= 0, CL= 1 μF (within 10% of V
OUT
Soft-start function for inductive load500
to 020mV
OUTmax
INmin
to V
INmax
at I
= I
OUT
OUTmax
)100
OUT
f < 10 kHz50
10 kHz < f < 100 kHz40
f = 1 MHz25
VIN= V
The VAUX2 general-purpose LDO regulator powers the auxiliary devices. Table 6-11 describes the
regulator characteristics.
Table 6-11. VAUX2 LDO Regulator Characteristics
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
OUTPUT LOAD CONDITIONS
Filtering capacitorConnected from VAUX2.OUT to analog ground0.312.7μF
Filtering capacitor ESR20600mΩ
ELECTRICAL CHARACTERISTICS
V
IN
V
OUT
I
OUT
V
DO
(1) For the LDO characteristics to be fulfilled, a minimum of 250 mV between the LDO input and LDO output voltages is required.
(2) Accuracy includes all variations (line and load regulations, line and load transients, temperature, and process).
(3) For nominal output voltage
(4) Transient load regulation is always included in the overall accuracy of the selected output voltage option. For voltage levels that have a
Input voltage2.73.64.5V
Output voltage
Rated output currentmA
DC load regulationOn mode: I
DC line regulationOn mode, VIN= V
Turn-on timeI
(2)
On mode100
Low-power mode5
= I
OUT
= 0, CL= 1 μF (within 10% of V
OUT
to 020mV
OUTmax
INmin
to V
INmax
at I
= I
OUT
OUTmax
)100μs
OUT
Wake-up timeFull load capability10μs
f < 10 kHz50
Ripple rejectiondB
Ground currentLow-power mode, I
Dropout voltage
(3)
Transient load regulation
Transient line regulation10mV
10 kHz < f < 100 kHz40
f = 1 MHz30
VIN= V
On mode, I
On mode, I
Low-power mode, I
Off mode at 55°C1
On mode, I
I
(4)
LOAD
Slew: 40 mA/μs
OUT
: I
MIN
+ 1 V, IO= I
OUT
OUT
OUT
– I
MAX
MAX
= 070
= I
OUTmax
= 017μA
OUT
= 5 mA20
OUT
= I
OUTmax
VINdrops 500 mV
Slew: 40 mV/μs
Overshootsoftstart3%
Pulldown resistance
Default in off mode250320450Ω
Configurable as HighZ in off mode100MΩ
tighter output voltage specification than the transient load regulation, then follow the output voltage specification.