SWN
TPS65123
D1
L1
10
C1
2.2
V
IN
2.7 V to 5.5 V
V
GL
down to −18 V/2 mA
C3
100 nFR4
R3
SWP
FBL
VMAIN
FBM
C5
220 nF
R6
R5
V
MAIN
3.0 V to 5.3 V/25 mA
C4
1
BOOT
VGH
C2
100 nF
V
GH
up to 20 V/2 mA
PGND
AGND
FBH
RUN
EN
VIN
A
A
GATE
R2
R1
Fµ
µFµH
0.1
0.5
0.9
4.0
8.0
12.0
16.0
20.0
24.0
2.3
2.4
2.6
2.8
3.2
4.0
4.7
5.2
5.5
0
10
20
30
40
50
60
70
80
90
100
Core Converter Efficiency − %
VIN − Input Voltage − V
I
BOOT
− Load Current − mA
TPS65120, TPS65121, TPS65123, TPS65124
SLVS531A – JUNE 2004 – REVISED MARCH 2005
SINGLE-INDUCTOR QUADRUPLE-OUTPUT
TFT LCD POWER SUPPLY
FEATURES
• Main Output, V
– Adjustable Voltage, 3.0 V to 5.6 V/25 mA
– Post-Regulated for Low Ripple (5mV
– ±0.8% Typical Accuracy
MAIN
)
PP
• Automatic or Programmable Power
Sequencing
• Complete 1 mm Component Profile Solution
• 2.5 V to 5.5 V Input Voltage Range
• Output Short Circuit Protected
– Efficiency up to 83% • 16-Pin QFN Package (3 × 3 × 0,9 mm)
• Positive Output, V
– Adjustable Voltage up to 20 V/2 mA
– ±3% Typical Accuracy
• Negative Output, V
– Adjustable Voltage down to -18 V/2 mA
– ±3% Typical Accuracy
• Auxiliary 1.8 V/3.3 V Linear Regulator
GH
APPLICATIONS
• Small Form Factor a-Si and LTPS TFT LCD
• Cell Phones, Smart Phones
GL
• PDAs, Pocket PCs
• Portable DVD
• Digital-Still Cameras, Camcorders
• Handheld Instruments
• Portable GPS
• Car Navigation Systems
DESCRIPTION
The TPS6512x DC-DC converter supplies all three voltages required by amorphous-silicon (a-Si) and
low-temperature poly-silicon (LTPS) TFT-LCD displays. The compact layout of the TPS6512x uses a single
inductor to generate independently-regulated positive and negative outputs. A free-running variable peak current
PWM control scheme time-multiplexes the inductor between outputs. This control architecture operates at a
pseudo-fixed-frequency to provide fast response to line and load transients while maintaining a relatively
constant switching frequency and high efficiency over a wide range of input and output voltages. Due to the high
switching frequency capability of the device, inexpensive and ultra-thin 8.2 or 10 µH inductors can be used.
The main output, V
auxiliary outputs generate a boosted output voltage, V
-18 V for the LCD gate drive. The device has internal current limiting for high reliability under fault conditions.
Additionally, the device offers a fixed output linear regulator for the LCD logic circuitry.
, is post-regulated to provide a low-ripple source drive voltage for the LCD display. The
MAIN
, up to 20 V, and a negative output voltage, V
GH
GL
, down to
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Figure 1. Typical Application Figure 2. Core Converter Efficiency
Copyright © 2004–2005, Texas Instruments Incorporated
TPS65120, TPS65121, TPS65123, TPS65124
SLVS531A – JUNE 2004 – REVISED MARCH 2005
These devices have limited built-in ESD protection. The leads should be shorted together or the device
placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
ORDERING INFORMATION
T
A
-40 to 85°C
(1) The xyz package is available in tape and reel. Add R suffix (xyzR) to order quantities of TBD parts. Add T suffix (xyzT) to order
quantities of 250 parts.
INTEGRATED POWER SEQUENCING PACKAGE PART NUMBER
LINEAR REGULATOR MARKING
Fixed 3.3V output voltage Automatic Power-Up/Down 3 × 3 QFN-16 TPS65120RGT BKA
Fixed 1.8V output voltage Automatic Power-Up/Down 3 × 3 QFN-16 TPS65121RGT BKB
NO Automatic Power-Up/Down 3 × 3 QFN-16 TPS65123RGT BKC
NO Programmable 3 × 3 QFN-16 TPS65124RGT BKD
Power-Up/Down
ABSOLUTE MAXIMUM RATINGS
over operating free-air temperature range (unless otherwise noted)
VIN -0.3 V to +6 V
Input voltage
Voltage
Input voltage at GATE, EN, RUN
Power dissipation Internally limited
Operating temperature range -40°C to 85°C
Maximum operating junction temperature, TJ(max) 135°C
Storage temperature range 65°C to 150°C
(1) Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings
only and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating
conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values are with respect to network ground terminal.
(2)
(2)
SWN VIN- 24 V to VIN+0.3 V
SWP - 0.3 V to +23 V
VGH - 0.3 V to +21 V
VMAIN, LDOIN, LDOOUT, ENVGL, ENVGH - 0.3 V to +6 V
BOOT - 0.3 V to +6.2 V
(2)
(1)
(1)
UNIT
-0.3 V to VIN+ 0.3 V
PACKAGE
DISSIPATION RATINGS
PACKAGE R
RGT 68°C/W 15mW/°C
(1) Maximum power dissipation is a function of TJ(max), θJAand TA. The maximum allowable power
dissipation at any allowable ambient temperature is PD= [TJ(max)-T
2
θ JA
DERATING FACTOR ABOVE TA= 25°C
(1)
]/ θJA.
A
TPS65120, TPS65121, TPS65123, TPS65124
SLVS531A – JUNE 2004 – REVISED MARCH 2005
ELECTRICAL CHARACTERISTICS
V
= 3.6 V, EN = RUN = VIN, L = 10 µH, TA= -40°C to 85°C, typical values are at TA= 25°C (unless otherwise noted)
IN
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
CONVERTER STAGE
R
≥ 330 Ω at V
L_MAIN
R
≥ 12 k Ω at V
Input voltage for full load operation 2.7 5.5 V
V
IN
Minimum input voltage for start-up 2.5 V
f Switching frequency 4.0 MHz
P
GH
P
GL
Output power on V
Output power on V
GH
GL
L_VGH
R
≥ 12 k Ω at V
L_VGL
V
= GND, TA= -40°C to 85°C
LDOIN
R
≥ 660 Ω at V
L_MAIN
R
≥ 24 k Ω at V
L_VGH
R
≥ 24 k Ω at V
L_VGL
V
= GND, TA= -20°C to 85°C
LDOIN
R
= 250 Ω at V
L_MAIN
V
= ENVGH = ENVGL = GND
LDOIN
VIN≥ 2.7 V 35
VIN≥ 2.5 V 15
VIN≥ 2.7 V 35
VIN≥ 2.5 V 15
VIN≥ 2.5 V 60
P
TOT
Total output power on
V
+ V
BOOT
+ V
GH
GL
VIN≥ 2.7 V 120
VIN≥ 3 V 150
VIN≥ 4.5 V 250
η Power efficiency V
I
LIM
I
START-UP
P-MOS1 current limit 2.7 V ≤ VIN≤ 5.5 V 150 200 mA
P-MOS1 start-up current limit 2.7 V ≤ VIN≤ 5.5 V 65 mA
P-MOS1 switch on-resistance Ω
r
DS(ON)
N-MOS1 switch on-resistance Ω
P-MOS1 leakage current 0.01
N-MOS1 leakage current 0.01
N-MOS2 + P-MOS2 forward voltage drop 400 600 mV
N-MOS3 + D1 forward voltage drop 900 1100 mV
MAIN
= 15 V, V
GH
IGH= IGL= 100 µA, V
VIN= V
VIN= V
V
= V
BOOT
V
= V
BOOT
V
= 6 V, TA= 25°C µA
DS
V
= V
GS
I
= ID= 50 mA
BOOT
V
= V
GS
IGH= ID= 50 mA
BOOT
GL
= 3.6 V 2.5 4.3
GS
= 2.5 V 3.8 6.9
GS
= 3.7 V 1.9 3.5
GS
= 5 V 1.4 2.3
GS
= 5.5 V, V
BOOT
= 5.5 V, V
BOOT
V
= 5.0 V, I
CONVERTER SUPPLY CURRENT
Quiescent current into VIN I
Quiescent current into BOOT 30 60
I
Q
Quiescent current into VGH 0.1 1
I
SD
Shutdown current TA= 25°C 0.1 1 µA
= IGH= IGL= 0 mA, 140 170
MAIN
V
= +15 V, V
GH
V
MAIN
V
FBL
V
LDOIN
TA= 25°C
= 5 V, V
= -0.2 V, V
GL
FBH
= GND, EN = RUN = VIN,
BOOT
= 5 V,
MAIN
= 12 V,
GH
= -12 V,
GL
= 5 V,
MAIN
= 12 V,
GH
= -12 V,
GL
= 5 V
MAIN
= 20 mA,
= -10 V, 83%
= GND
LDOIN
= 2 V,
SWP
= 2 V,
SWP
= -15 V,
= V
= +1.5 V,
FBM
= 5.25 V,
mW
mW
mW
µA
3
TPS65120, TPS65121, TPS65123, TPS65124
SLVS531A – JUNE 2004 – REVISED MARCH 2005
ELECTRICAL CHARACTERISTICS (continued)
V
= 3.6 V, EN = RUN = VIN, L = 10 µH, TA= -40°C to 85°C, typical values are at TA= 25°C (unless otherwise noted)
IN
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
MAIN OUTPUT
V
MAIN
I
MAIN
V
FBM
I
FBM
I
SC_MAIN
R
DIS_VMAIN
VGH OUTPUT
V
GH
I
GH
V
FBH
I
FBH
R
DIS_VGH
VGL OUTPUT
V
GL
I
GL
V
FBL
I
FBL
Main output voltage range 3.0 5.6 V
V
≤ 5.3 V 25
Maximum main output current mA
Feedback regulation voltage
Feedback input bias current V
Load regulation I
Minimum dropout voltage I
Main output voltage ripple I
Short-circuit current limit V
MAIN
V
≥ 5.3 V 7.5
MAIN
2.7 V ≤ VIN≤ 5.5 V, 100 µA ≤ I
TA= -20°C to 50°C
≤ 25 mA,
MAIN
2.7 V ≤ VIN≤ 5.5 V,
0 mA ≤ I
FBM
MAIN
MAIN
MAIN
BOOT
≤ 25 mA
MAIN
= V
REF
= 0 to 25 mA, V
= 5 V 0.006 %/mA
MAIN
= 10 mA 130 mV
= 10 mA 5 mV
= 5.5 V 50 mA
Discharge resistor for power-down sequence
V
output voltage range VIN+ 0.5 20 V
GH
Maximum DC output current 6 mA
V
precharge resistor 1 k Ω
GH
Feedback regulation voltage 2.7 V ≤ VIN≤ 5.5 V, 0 mA ≤ IGH≤ 2 mA 1.177 1.213 1.249 V
Feedback input bias current V
Load regulation IGH= 0 to 2 mA, V
= 0 V 0.01 0.1 µA
FBH
= 15 V -0.11 %/mA
GH
Line regulation VIN= 2.7 V to 5.5 V, IGH= 100 µA 0.01 %/V
V
output voltage ripple 20 mV
GH
200 µA load, V
C
= 220 nF, C
OUT
= 15 V,
GH
= 10 pF
FF
Discharge resistor for power-down sequence
V
Output voltage range -18 -2.5 V
GL
Maximum DC output current 6 mA
Feedback regulation voltage 2.7 V ≤ VIN≤ 5.5 V, 0 mA ≤ IGL≤ 2 mA -0.036 0 0.036 V
Feedback input bias current V
Load regulation IGL= 0 to 2 mA, V
= 0 V 0.01 0.1 µA
FBL
= -15 V 0.13 %/mA
GL
Line regulation VIN= 2.7 V to 5.5 V, IGL= 100 µA 0.1 %/V
V
output voltage ripple 20 mV
GL
200 µA load, V
C
= 220 nF
OUT
= -15 V,
GL
1.203 1.213 1.223 V
1.195 1.213 1.231 V
0.01 0.1 µA
P-P
10 k Ω
10 k Ω
4
TPS65120, TPS65121, TPS65123, TPS65124
SLVS531A – JUNE 2004 – REVISED MARCH 2005
ELECTRICAL CHARACTERISTICS (continued)
V
= 3.6 V, EN = RUN = VIN, L = 10 µH, TA= -40°C to 85°C, typical values are at TA= 25°C (unless otherwise noted)
IN
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
LINEAR REGULATOR STAGE - AUXILIARY OUTPUT
V
LDOIN
V
LDOOUT
I
LDOOUT
I
SC_LDO
I
Q_LDO
I
SD_LDO
GATE DRIVER
V
IH
V
IL
UNDERVOLTAGE LOCKOUT
V
UVLO
LOGIC SIGNALS EN, RUN, ENVGL, ENVGH
V
IH
V
IL
I
LKG
Input voltage range 2.5 5.8 V
Output voltage range 1.8 V
Maximum output current 20 mA
Short-circuit current limit V
Minimum dropout voltage I
Total accuracy ±3%
Load regulation I
Line regulation 0.013 %/V
Linear regulator quiescent current 11 20 µA
LDOOUT
2.5 V ≤ V
0 mA ≤ I
LDOOUT
V
to 5.5 V, I
V
TA= 25°C
= 0 V 50 mA
LDOOUT
= 10 mA 400 mV
≤ 5.5 V,
LDOIN
≤ 20 mA
LDOOUT
= 0 to 20 mA 0.006 %/mA
= V
LDOIN
LDOOUT
= V
LDOIN
LDOOUT
LDOOUT
+ 0.5 V (min 2.5 V)
= 20 mA
+ 0.4 V (min 2.5 V),
Linear regulator shutdown current GATE = VIN 0.2 1 µA
Gate output pull-down resistance V
< 500 mV 100 k Ω
GATE
Gate output pull-up resistance 100 k Ω
High level input voltage 1.4 V
Low level input voltage 0.4 V
Undervoltage lockout threshold VINfalling 2.15 2.3 V
High level input voltage 1.4 V
Low level input voltage 0.4 V
Logic input leakage current µA
ENVGL, ENVGH = VINor GND (TPS65124) 0.01 0.1
EN, RUN = V
IN
EN, RUN pin pull-down resistance EN, RUN ≤ 0.4 v 100 k Ω
0.01 0.1
V
LDOIN
-0.5
5
1
2
3
4
12
11
10
9
5 6 7 8
131516
EN
RUN
ENVGL
ENVGH
FBL
FBM
AGND
VMAIN
PGND
BOOT
VGH
FBH
GATE
VIN
SWN
SWP
1
2
3
4
12
11
10
9
5 6
7
8
13141516
EN
RUN
AGND
AGND
FBL
FBM
AGND
VMAIN
PGND
BOOT
VGH
FBH
GATE
VIN
SWP
1
2
3
4
12
11
10
9
5 6
7
8
13141516
Exposed
Thermal Die*
EN
RUN
LDOIN
LDOOUT
FBL
FBM
AGND
VMAIN
PGND
BOOT
VGH
FBH
GATE
VIN
SWN
SWP
AGND
SWN
Exposed
Thermal Die*
AGND
14
Exposed
Thermal Die*
AGND
TPS65120/1/2
(TOP VIEW)
TPS65123
(TOP VIEW)
TPS65124
(TOP VIEW)
TPS65120, TPS65121, TPS65123, TPS65124
SLVS531A – JUNE 2004 – REVISED MARCH 2005
PIN ASSIGNMENTS
TERMINAL FUNCTIONS
TERMINAL
NAME NO.
VIN 15 I This is the input voltage pin of the device.
GATE 16 I/O section), or an active high control input. Pulling GATE above the 1.4 V logic-high level and RUN to a logic-low
RUN 2 I
EN 1 I floating. A simultaneous logic-high level on EN and RUN enables the converter and a logic-low shuts down
SWN 14 I/O Connect the inductor to this pin. This pin is connected to the source of the high-side MOSFET switch.
SWP 13 I/O Connect the inductor to this pin. This pin is connected to the drain of the low-side MOSFET switch.
PGND 12 O Power ground. Connect to AGND underneath the IC.
VGH 10 O Positive output
BOOT 11 O
VMAIN 8 I Main output
FBH 9 I Feedback pin for the positive output voltage divider. Regulates to 1.213 V nominal.
FBL 5 I
FBM 6 I Feedback pin for the main output voltage divider. Regulates to 1.213V nominal.
AGND 7, 3, 4
LDOIN 3 I (TPS65120/1/2). The low-dropout series-pass regulator (LDO) is enabled according to the GATE signal
LDOOUT 4 O Auxiliary linear regulator output (TPS65120/1/2).
ENVGL 3 I Enable pin for negative output (TPS65124). This pin should be terminated and not be left floating.
ENVGH 4 I Enable pin for positive output (TPS65124). This pin should be terminated and not be left floating.
I/O DESCRIPTION
This pin can either be the gate driver output to an external small P-Channel MOSFET (see application
level disables the integrated active power-down sequencing.
RUN controls the external P-Channel MOSFET. This pin must be terminated and not be left floating. Forcing
this pin to a logic-high level turns on the external MOSFET switch.
This is the enable pin of the multiple-output dc-to-dc converter. This pin must be terminated and not be left
the device.
Provides a bootstrapped supply for the rectifier MOSFET driver, enabling the gate of the MOSFET to be
driven above the output voltage.
Feedback pin for the negative output voltage divider. Regulates to 0 V nominal. Connect feedback resistor
divider between VGL and main output.
Analog ground. Connect to power ground (PGND) underneath IC. Pins 3 and 4 are only used for AGND in
TPS65123.
Auxiliary linear regulator input. If this pin is connected to GND, the voltage regulator is disabled
timing.
6
Current Limit
Comparator
Undervoltage
Lockout
Bias Supply
VIN
SWP
LDOOUT
SWN
T
on
VGH
BOOT
PGND
VMAINLDO
BOOT
V
REF
R
V
REF
R
FBH
R
FBL
BOOT
FBM
AGND
Bandgap
V
REF
= 1.213V
Power Up/Down
Sequencer
Oscillator
S
Min Off Time
VMAIN
Control
Logic
EN
BOOT
BOOT
P−MOS1
P−MOS2
N−MOS1
N−MOS2
N−MOS3
D1
RUN
VMAIN
GATE
EN
100kR
Power Down Seq Off
Power Down Seq Off
R
DIS_VGH
R
DIS_VMAIN
EN
LDO
LDOIN
EN_LDOAUX
NOT PRESENT IN TPS65123
FUNCTIONAL BLOCK DIAGRAM - TPS65120/1/2/3
TPS65120, TPS65121, TPS65123, TPS65124
SLVS531A – JUNE 2004 – REVISED MARCH 2005
7
Current Limit
Comparator
Undervoltage
Lockout
Bias Supply
VIN
SWP
SWN
T
on
VGH
BOOT
PGND
VMAIN
BOOT
V
REF
R
V
REF
R
FBH
R
FBL
BOOT
FBM
AGND
Power Up/Down
Sequencer
Oscillator
S Min Off Time
VMAIN
Control
Logic
EN
BOOT
BOOT
P−MOS1
P−MOS2
N−MOS1
N−MOS2
N−MOS3
D1
RUN
VMAIN
GATE
EN
100kR
Power Down Seq Off
Power Down Seq Off
R
DIS_VGH
R
DIS_VMAIN
EN
ENVGH
ENVGL
Bandgap
V
REF
= 1.213V
LDO
TPS65120, TPS65121, TPS65123, TPS65124
SLVS531A – JUNE 2004 – REVISED MARCH 2005
FUNCTIONAL BLOCK DIAGRAM - TPS65124
8
PARAMETER MEASUREMENT INFORMATION
SWN
TPS65120
D1
L1
10
C1
F
V
IN
2.7 V to 5.5 V
V
GL
down to −18 V/2 mA
C3
220 nF
R4
R3
SWP
FBL
VMAIN
FBM
C5
220 nF
R6
R5
V
MAIN
3.0 V to 5.3 V/20 mA
C4
1
BOOT
VGH
C2
220 nF
V
GH
up to 20 V/2 mA
PGND
AGND
FBH
RUN
V
AUX
3.3 V/20 mA
EN
VIN
A
A
GATE
LDOIN
LDOOUT
C6
220 nF
R2
R1
List of Components:
U1 = TPS6512x
L1 = EPCOS SIMID1812-C
D1 = ZETEX ZUMD54C
CX = X5R/X7R
2.2 FH
TPS65120, TPS65121, TPS65123, TPS65124
SLVS531A – JUNE 2004 – REVISED MARCH 2005
η Core converter efficiency vs Load current 3
V
MAIN
V
, V
GH
V
GH
V
GL
f
s
I
Q
TYPICAL CHARACTERISTICS
Table of Graphs
FIGURE
vs Input voltage 4
Main output efficiency vs Load current 5
vs Input voltage 6
Output ripple voltage 7
DC output voltage vs Load current 8
Load transient response 9
GL
Positive, negative output ripple voltage 10, 11
DC output voltage vs Load current 12
DC output voltage vs Load current 13
Switching frequency vs Load current 14
No load quiescent current vs Input voltage 15
Power-Up Sequencing (TPS65120) 16
Power-Down Sequencing (TPS65120) 17
9