Texas Instruments TPS2815PWLE, TPS2815PWR, TPS2815P, TPS2815DR, TPS2814PWR Datasheet

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TPS2811, TPS2812, TPS2813, TPS2814, TPS2815

DUAL HIGH-SPEED MOSFET DRIVERS

SLVS132D – NOVEMBER 1995 – REVISED NOVEMBER 1997

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

Industry-Standard Driver Replacement

25-ns Max Rise/Fall Times and 40-ns Max Propagation Delay – 1-nF Load, V

= 14 V

2-A Peak Output Current, VCC = 14 V

5-µA Supply Current — Input High or Low

4-V to 14-V Supply-Voltage Range; Internal Regulator Extends Range to 40 V (TPS2811, TPS2812, TPS2813)

–40°C to 125°C Ambient-Temperature Operating Range

description

The TPS28xx series of dual high-speed MOSFET drivers are capable of delivering peak currents of 2 A into highly capacitive loads. This performance is achieved with a design that inherently minimizes shoot-through current and consumes an order of magnitude less supply current than competitive products.

The TPS2811, TPS2812, and TPS2813 drivers include a regulator to allow operation with supply inputs between 14 V and 40 V. The regulator output can power other circuitry, provided power dissipation does not exceed package limitations. When the regulator is not required, REG_IN and REG_OUT can be left disconnected or both can be connected to V

or GND.

The TPS2814 and the TPS2815 have 2-input gates that give the user greater flexibility in controlling the MOSFET. The TPS2814 has AND input gates with one inverting input. The TPS2815 has dual-input NAND gates.

TPS28xx series drivers, available in 8-pin PDIP, SOIC, and TSSOP packages and as unmounted ICs, operate over a ambient temperature range of –40°C to 125°C.

AVAILABLE OPTIONS

PACKAGED DEVICES

INTERNAL

REGULATOR

LOGIC FUNCTION

SMALL

OUTLINE

(D)

PLASTIC

DIP

(P)

TSSOP (PW)

CHIP

FORM

(Y)

–40°C

Yes

Dual inverting drivers Dual noninverting drivers One inverting and one noninverting driver

TPS2811D TPS2812D TPS2813D

TPS2811P TPS2812P TPS2813P

TPS2811PWLE TPS2812PWLE TPS2813PWLE

TPS2811Y TPS2812Y TPS2813Y

125°C

Dual 2-input AND drivers, one inverting input on each driver Dual 2-input NAND drivers

TPS2814D

TPS2815D

TPS2814P

TPS2815P

TPS2814PWLE

TPS2815PWLE

TPS2814Y

TPS2815Y

The D package is available taped and reeled. Add R suffix to device type (e.g., TPS281 1DR). The PW package is only available left-end taped and reeled and is indicated by the LE suffix on the device type (e.g., TPS2811PWLE).

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.

1 2 3 4

8 7 6 5

REG_IN

1IN

GND

2IN

REG_OUT 1OUT V

2OUT

TPS2811, TPS2812, TPS2813 . . . D, P, AND PW

PACKAGES (TOP VIEW)

1 2 3 4

8 7 6 5

1IN1

1IN2

2IN1 2IN2

GND 1OUT V

2OUT

TPS2814 . . . D, P, AND PW PACKAGES

(TOP VIEW)

1 2 3 4

8 7 6 5

1IN1

1IN2

2IN1 2IN2

GND 1OUT V

2OUT

TPS2815 . . . D, P, AND PW PACKAGES

(TOP VIEW)

TPS2811, TPS2812, TPS2813, TPS2814, TPS2815 DUAL HIGH-SPEED MOSFET DRIVERS

SLVS132D – NOVEMBER 1995 – REVISED NOVEMBER 1997

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

functional block diagram

Regulator

4 3

REG_IN

1IN

2IN

GND

8 6

REG_OUT V

1OUT

2OUT

TPS2811

Regulator

REG_IN

1IN

2IN

GND

8 6

REG_OUT V

1OUT

2OUT

TPS2812

Regulator

REG_IN

1IN

2IN

GND

8 6

REG_OUT V

1OUT

2OUT

TPS2813

1IN1

2IN1

GND

1OUT

2OUT

TPS2814

1IN2

2IN2

1IN1

2IN1

GND

1OUT

2OUT

TPS2815

1IN2

2IN2

REG_IN

7.5 Ω

REG_OUT

regulator diagram (TPS2811, TPS2812, TPS2813 only)

input stage diagram

To Drive Stage

output stage diagram

OUT

Predrive

TPS2811, TPS2812, TPS2813, TPS2814, TPS2815

DUAL HIGH-SPEED MOSFET DRIVERS

SLVS132D – NOVEMBER 1995 – REVISED NOVEMBER 1997

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TPS28xxY chip information

This chip, when properly assembled, displays characteristics similar to those of the TPS28xx. Thermal compression or ultrasonic bonding may be used on the doped aluminum bonding pads. The chip may be mounted with conductive epoxy or a gold-silicon preform.

BONDING PAD ASSIGNMENTS

CHIP THICKNESS: 15 MILS TYPICAL

BONDING PADS: 4 × 4 MILS MINIMUM

TJmax OPERATING TEMPERATURE = 150°C

TOLERANCES ARE ±10%.

ALL DIMENSIONS ARE IN MILS.

(7) (6)

(1)

(5)

(2)

(3)

GND

1OUT V

REG_IN

1IN

TPS2811Y TPS2812Y TPS2813Y

REG_OUT

(8)

(4)

2IN

(1) (8)

(7)

(2)

(3)

(4)

(5)

(6)

2OUT

(6)

(5)

(1)

(4)

(2)

(8)

GND

1OUT V

1IN1 1IN2

TPS2814Y

(7)

(3)

2IN1

2OUT

2IN2

(6)

(5)

(1)

(4)

(2)

(8)

GND

1OUT V

1IN1 1IN2

TPS2815Y

(7)

(3)

2IN1

2OUT

2IN2

TPS2811, TPS2812, TPS2813, TPS2814, TPS2815 DUAL HIGH-SPEED MOSFET DRIVERS

SLVS132D – NOVEMBER 1995 – REVISED NOVEMBER 1997

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

Terminal Functions

TPS2811, TPS2812, TPS2813

TERMINAL NUMBERS

TERMINAL

NAME

TPS2811

Dual Inverting

Drivers

TPS2812

Dual Noninverting

Drivers

TPS2813

Complimentary

Drivers

DESCRIPTION

REG_IN 1 1 1 Regulator input 1IN 2 2 2 Input 1 GND 3 3 3 Ground 2IN 4 4 4 Input 2 2OUT 5 = 2IN 5 = 2IN 5 = 2IN Output 2 V

6 6 6 Supply voltage 1OUT 7 = 1IN 7 = 1IN 7 = 1IN Output 1 REG_OUT 8 8 8 Regulator output

TPS2814, TPS2815

TERMINAL NUMBERS

TERMINAL

NAME

TPS2814

Dual AND Drivers with Single

Inverting Input

TPS2815

Dual NAND Drivers

DESCRIPTION

1IN1 1 1 Noninverting input 1 of driver 1 1IN2 2 - Inverting input 2 of driver 1 1IN2 - 2 Noninverting input 2 of driver 1 2IN1 3 3 Noninverting input 1 of driver 2 2IN2 4 - Inverting input 2 of driver 2 2IN2 - 4 Noninverting input 2 of driver 2 2OUT 5 = 2IN1 • 2IN2 5 = 2IN1 • 2IN2 Output 2 V

6 6 Supply voltage 1OUT 7 = 1IN1 • 1IN2 7 = 1IN1 • 1IN2 Output 1 GND 8 8 Ground

DISSIPATION RATING TABLE

PACKAGE

TA ≤ 25°C

POWER RATING

DERATING FACTOR

ABOVE TA = 25°C

TA = 70°C

POWER RATING

TA = 85°C

POWER RATING

P 1090 mW 8.74 mW/°C 697 mW 566 mW D 730 mW 5.84 mW/°C 467 mW 380 mW

PW 520 mW 4.17 mW/°C 332 mW 270 mW

TPS2811, TPS2812, TPS2813, TPS2814, TPS2815

DUAL HIGH-SPEED MOSFET DRIVERS

SLVS132D – NOVEMBER 1995 – REVISED NOVEMBER 1997

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

absolute maximum ratings over operating free-air temperature range (unless otherwise noted)

†

Regulator input voltage range, REG_IN –0.3 V to 42 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Supply voltage, V

–0.3 V to 15 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Input voltage range, 1IN, 2IN, 1IN1, 1IN2, 1IN2

, 2IN1, 2IN2, 2IN2 –0.3 V to V

. . . . . . . . . . . . . . . . . . . . . . .

Continuous regulator output current, REG_OUT 25 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Continuous output current, 1OUT, 2OUT ±100 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Continuous total power dissipation See Dissipation Rating Table. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating ambient temperature range, T

–40°C to 125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Storage temperature range, T

stg

–65°C to 150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds 260°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

†

Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

NOTE 1: All voltages are with respect to device GND pin.

recommended operating conditions

MIN MAX UNIT

Regulator input voltage range 8 40 V Supply voltage, V

4 14 V

Input voltage, 1IN1, 1IN2, 1IN2, 2IN1, 2IN2, 2IN2, 1IN, 2IN –0.3 V

V Continuous regulator output current, REG_OUT 0 20 mA Ambient temperature operating range –40 125 °C

TPS28xx electrical characteristics over recommended operating ambient temperature range, V

= 10 V, REG_IN open for TPS2811/12/13, C

= 1 nF (unless otherwise noted)

inputs

PARAMETER TEST CONDITIONS MIN TYP†MAX UNIT

VCC = 5 V 3.3 4 V

Positive-going input threshold voltage

VCC = 10 V 5.8 9 V VCC = 14 V 8.3 13 V VCC = 5 V 1 1.6 V

Negative-going input threshold voltage

VCC = 10 V 1 4.2 V

VCC = 14 V 1 6.2 V Input hysteresis VCC = 5 V 1.6 V Input current Inputs = 0 V or V

–1 0.2 1 µA

Input capacitance 5 10 pF

†

Typicals are for TA = 25°C unless otherwise noted.

outputs

PARAMETER TEST CONDITIONS MIN TYP†MAX UNIT

IO = –1 mA 9.75 9.9

High-level output voltage

IO = –100 mA 8 9.1

IO = 1 mA 0.18 0.25

Low-level output voltage

IO = 100 mA 1 2

Peak output current VCC = 10 V 2 A

†

Typicals are for TA = 25°C unless otherwise noted.

TPS2811, TPS2812, TPS2813, TPS2814, TPS2815 DUAL HIGH-SPEED MOSFET DRIVERS

SLVS132D – NOVEMBER 1995 – REVISED NOVEMBER 1997

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

regulator (TPS2811/2812/2813 only)

PARAMETER TEST CONDITIONS MIN TYP†MAX UNIT

Output voltage 14 ≤ REG_IN ≤ 40 V, 0 ≤ IO ≤ 20 mA 10 11.5 13 V Output voltage in dropout IO = 10 mA, REG_IN = 10 V 9 9.6 V

†

Typicals are for TA = 25°C unless otherwise noted.

supply current

PARAMETER TEST CONDITIONS MIN TYP†MAX UNIT

Supply current into V

Inputs high or low 0.2 5 µA

Supply current into REG_IN REG_IN = 20 V, REG_OUT open 40 100 µA

†

Typicals are for TA = 25°C unless otherwise noted.

TPS28xxY electrical characteristics at TA = 25°C, V

= 10 V, REG_IN open for TPS2811/12/13,

= 1 nF (unless otherwise noted)

inputs

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

VCC = 5 V 3.3 V

Positive-going input threshold voltage

VCC = 10 V 5.8 V VCC = 14 V 8.2 V VCC = 5 V 1.6 V

Negative-going input threshold voltage

VCC = 10 V 3.3 V

VCC = 14 V 4.2 V Input hysteresis VCC = 5 V 1.2 V Input current Inputs = 0 V or V

0.2 µA

Input capacitance 5 pF

outputs

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

IO = –1 mA 9.9

High-level output voltage

IO = –100 mA 9.1

IO = 1 mA 0.18

Low-level output voltage

IO = 100 mA 1

Peak output current VCC = 10.5 V 2 A

regulator (TPS2811, 2812, 2813)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

Output voltage 14 ≤ REG_IN ≤ 40 V, 0 ≤ IO ≤ 20 mA 11.5 V Output voltage in dropout IO = 10 mA, REG_IN = 10 V 9.6 V

power supply current

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

Supply current into V

Inputs high or low 0.2 µA

Supply current into REG_IN REG_IN = 20 V, REG_OUT open 40 µA

TPS2811, TPS2812, TPS2813, TPS2814, TPS2815

DUAL HIGH-SPEED MOSFET DRIVERS

SLVS132D – NOVEMBER 1995 – REVISED NOVEMBER 1997

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

switching characteristics for all devices over recommended operating ambient temperature range, REG_IN open for TPS2811/12/13, C

= 1 nF (unless otherwise specified)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

VCC = 14 V 14 25

Rise time

VCC = 10 V

15 30

ns VCC = 5 V 20 35 VCC = 14 V 15 25

Fall time

VCC = 10 V

15 30

ns VCC = 5 V 18 35 VCC = 14 V 25 40

PHL

Prop delay time high-to-low-level output

VCC = 10 V 25 45

ns VCC = 5 V 34 50 VCC = 14 V 24 40

PLH

Prop delay time low-to-high-level output

VCC = 10 V

26 45

ns VCC = 5 V 36 50

PARAMETER MEASUREMENT INFORMATION

Regulator

50 Ω

0.1 µF 4.7 µF

1 nF

Input Output

TPS2811

NOTE A: Input rise and fall times should be ≤10 ns for accurate measurement of ac parameters.

Figure 1. Test Circuit For Measurement of Switching Characteristics

TPS2811, TPS2812, TPS2813, TPS2814, TPS2815 DUAL HIGH-SPEED MOSFET DRIVERS

SLVS132D – NOVEMBER 1995 – REVISED NOVEMBER 1997

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

PARAMETER MEASUREMENT INFORMATION

0–10 V dc

xOUT

0.1 µF 4.7 µF

10 V

Current

Loop

TPS2811

Regulator

Figure 2. Shoot-through Current Test Setup

50%

90%

1IN

1OUT

50% 50%

90%

10%

50%

10%

PLH

PHL

0 V

Figure 3. Typical Timing Diagram (TPS2811)

TYPICAL CHARACTERISTICS

Tables of Characteristics Graphs and Application Information

typical characteristics

PARAMETER vs PARAMETER 2 FIGURE PAGE

Rise time Supply voltage 4 10 Fall time Supply voltage 5 10 Propagation delay time Supply voltage 6, 7 10

Supply voltage 8 11

Supply current Load capacitance 9 11

Ambient temperature 10 11 Input threshold voltage Supply voltage 11 11 Regulator output voltage Regulator input voltage 12, 13 12 Regulator quiescent current Regulator input voltage 14 12 Peak source current Supply voltage 15 12 Peak sink current Supply voltage 16 13

Input voltage, high-to-low 17 13

Shoot-through current

Input voltage, low-to-high 18 13

TPS2811, TPS2812, TPS2813, TPS2814, TPS2815

DUAL HIGH-SPEED MOSFET DRIVERS

SLVS132D – NOVEMBER 1995 – REVISED NOVEMBER 1997

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TYPICAL CHARACTERISTICS

Tables of Characteristics Graphs and Application Information (Continued)

general applications

PARAMETER vs PARAMETER 2 FIGURE PAGE

Switching test circuits and application information 19, 20 15

Low-to-high 21, 23, 25 16, 17

Voltage of 1OUT vs 2OUT

Time

High-to-low 22, 24, 26 16, 17

circuit for measuring paralleled switching characteristics

PARAMETER vs PARAMETER 2 FIGURE PAGE

Switching test circuits and application information 27 17

Low-to-high 28, 30 18

Input voltage vs output voltage

Time

High-to-low 29, 31 18

Hex-1 to Hex-4 application information

PARAMETER vs PARAMETER 2 FIGURE PAGE

Driving test circuit and application information 32 19

Hex-1 size 33 20 Hex-2 size 36 20

Drain-source voltage vs drain current Time

Hex-3 size 39 21 Hex-4 size 41 22 Hex-4 size parallel drive 45 23 Hex-1 size 34 20 Hex-2 size 37 21

Drain-source voltage vs gate-source voltage at turn-on Time

Hex-3 size 40 21 Hex-4 size 43 22 Hex-4 size parallel drive 46 23 Hex-1 size 35 20 Hex-2 size 38 21

Drain-source voltage vs gate-source voltage at turn-off Time

Hex-3 size 42 22 Hex-4 size 44 22 Hex-4 size parallel drive 47 23

synchronous buck regulator application

PARAMETER vs PARAMETER 2 FIGURE PAGE

3.3-V 3-A Synchronous-Rectified Buck Regulator Circuit 48 24 Q1 drain voltage vs gate voltage at turn-on 49 26 Q1 drain voltage vs gate voltage at turn-off 50 26 Q1 drain voltage vs Q2 gate-source voltage

Time

51, 52, 53 26, 27

3 A 54 27

Output ripple voltage vs inductor current

5 A 55 27

TPS2811, TPS2812, TPS2813, TPS2814, TPS2815 DUAL HIGH-SPEED MOSFET DRIVERS

SLVS132D – NOVEMBER 1995 – REVISED NOVEMBER 1997

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TYPICAL CHARACTERISTICS

Figure 4

5678910

– Rise Time – ns

RISE TIME

SUPPLY VOLTAGE

11 12 13 14

CL = 1 nF

TA = 125°C

TA = 75°C

TA = 25°C

TA = –25°C

TA = –50°C

VCC – Supply Voltage – V

Figure 5

5678910

– Fall Time – ns

FALL TIME

SUPPLY VOLTAGE

11 12 13 14

CL = 1 nF

TA = 125°C TA = 75°C

TA = 25°C

TA = –25°C

TA = –50°C

VCC – Supply Voltage – V

Figure 6

56 78910

11 12 13 14

CL = 1 nF

TA = 125°C

TA = 75°C

TA = 25°C

TA = –25°C

TA = –50°C

Propagation Delay Time,

PROPAGATION DELAY TIME,

HIGH-TO-LOW-LEVEL OUTPUT

SUPPLY VOLTAGE

VCC – Supply Voltage – V

t –

PHL

High-To-Low-Level Output – ns

Figure 7

5678 910

11 12 13 14

Propagation Delay Time,

PROPAGATION DELAY TIME,

LOW-TO-HIGH-LEVEL OUTPUT

SUPPLY VOLTAGE

VCC – Supply Voltage – V

t –

PLH

Low-To-High-Level Output – ns

CL = 1 nF

TA = –50°C

TA = 75°C

TA = –25°C

TA=125°C

TA = 25°C

TPS2811, TPS2812, TPS2813, TPS2814, TPS2815

DUAL HIGH-SPEED MOSFET DRIVERS

SLVS132D – NOVEMBER 1995 – REVISED NOVEMBER 1997

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TYPICAL CHARACTERISTICS

Figure 8

46810

Supply Current – mA

SUPPLY CURRENT

SUPPLY VOLTAGE

12 14

Duty Cycle = 50% CL = 1 nF

1 MHz

40 kHz

500 kHz

100 kHz

75 kHz

VCC – Supply Voltage – V

I –

Figure 9

1.5

0.5

0 0.5 1

Supply Current – mA

SUPPLY CURRENT

LOAD CAPACITANCE

2.5

1.5 2

VCC = 10 V f = 100 kHz TA = 25°C

CL – Load Capacitance – nF

I –

Figure 10

1.15

1.13

1.12

1.1 –50 –25 0 25 50

1.16

1.18

1.2

75 100 125

1.19

1.17

1.14

1.11

Supply Current – mA

SUPPLY CURRENT

AMBIENT TEMPERATURE

CL = 1 nF VCC = 10 V Duty Cycle = 50% f = 100 kHz

TA – Temperature – ° C

I –

Figure 11

TA = 25°C

46810

Input Threshold Voltage – V

12 14

+ Threshold

– Threshold

INPUT THRESHOLD VOLTAGE

SUPPLY VOLTAGE

VCC – Supply Voltage – V

V –

TPS2811, TPS2812, TPS2813, TPS2814, TPS2815 DUAL HIGH-SPEED MOSFET DRIVERS

SLVS132D – NOVEMBER 1995 – REVISED NOVEMBER 1997

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TYPICAL CHARACTERISTICS

Figure 12

9 8

4 8 12 16 20 24

28 32 36 40

Regulator Output Voltage – V

REGULATOR OUTPUT VOLTAGE

REGULATOR INPUT VOLTAGE

TA = –55°C

TA = 25°C

TA = 125°C

RL = 10 kΩ

Regulator Input Voltage – V

6 5 4

Figure 13

46 810

12 14

Regulator Output Voltage – V

REGULATOR OUTPUT VOLTAGE

REGULATOR INPUT VOLTAGE

TA = 125°C

TA = –55°C

TA = 25°C

RL = 10 kΩ

Regulator Input Voltage – V

Figure 14

4 8 12 16 20 24

28 32 36 40

TA = 25°C

TA = 125°C

TA = –55°C

Regulator Quiescent Current –

REGULATOR QUIESCENT CURRENT

REGULATOR INPUT VOLTAGE

Aµ

RL = 10 kΩ

Regulator Input Voltage – V

Figure 15

46810

1.5

2.5

12 14

Peak Source Current – A

PEAK SOURCE CURRENT

SUPPLY VOLTAGE

VCC – Supply Voltage – V

RL = 0.5 Ω f = 100 kHz Duty Cycle = 5% TA = 25°C

TPS2811, TPS2812, TPS2813, TPS2814, TPS2815

DUAL HIGH-SPEED MOSFET DRIVERS

SLVS132D – NOVEMBER 1995 – REVISED NOVEMBER 1997

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TYPICAL CHARACTERISTICS

46810

1.5

2.5

12 14

Peak Sink Current – A

PEAK SINK CURRENT

SUPPLY VOLTAGE

VCC – Supply Voltage – V

RL = 0.5 Ω f = 100 kHz Duty Cycle = 5% TA = 25°C

Figure 16

Figure 17

10 8 6 4

Shoot-Through Current – mA

SHOOT-THROUGH CURRENT

INPUT VOLTAGE, HIGH-TO-LOW

VI – Input Voltage, High-to-Low – V

VCC = 10 V CL = 0 TA = 25°C

Figure 18

0246

810

SHOOT-THROUGH CURRENT

INPUT VOLTAGE, LOW-TO-HIGH

VI – Input Voltage, Low-to-High – V

VCC = 10 V CL = 0 TA = 25°C

Shoot-Through Current – mA

TPS2811, TPS2812, TPS2813, TPS2814, TPS2815 DUAL HIGH-SPEED MOSFET DRIVERS

SLVS132D – NOVEMBER 1995 – REVISED NOVEMBER 1997

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

APPLICATION INFORMATION

The TPS2811, TPS2812 and TPS2813 circuits each contain one regulator and two MOSFET drivers. The regulator can be used to limit V

to between 10 V and 13 V for a range of input voltages from 14 V to 40 V, while providing up to 20 mA of dc drive. The TPS2814 and TPS2815 both contain two drivers, each of which has two inputs. The TPS281 1 has inverting drivers, the TPS2812 has noninverting drivers, and the TPS2813 has one inverting and one noninverting driver. The TPS2814 is a dual 2-input AND driver with one inverting input on each driver, and the TPS2815 is a dual 2-input NAND driver . These MOSFET drivers are capable of supplying up to 2.1 A or sinking up to 1.9 A (see Figures 15 and 16) of instantaneous current to n-channel or p-channel MOSFETs. The TPS2811 family of MOSFET drivers have very fast switching times combined with very short propagation delays. These features enhance the operation of today’s high-frequency circuits.

The CMOS input circuit has a positive threshold of approximately 2/3 of V

, with a negative threshold of 1/3 of

, and a very high input impedance in the range of 10

Ω. Noise immunity is also very high because of the Schmidt trigger switching. In addition, the design is such that the normal shoot-through current in CMOS (when the input is biased halfway between V

and ground) is limited to less than 6 mA. The limited shoot-through is evident in the graphs in Figures 17 and 18. The input stage shown in the functional block diagram better illustrates the way the front end works. The circuitry of the device is such that regardless of the rise and/or fall time of the input signal, the output signal will always have a fast transition speed; this basically isolates the waveforms at the input from the output. Therefore, the specified switching times are not affected by the slopes of the input waveforms.

The basic driver portion of the circuits operate over a supply voltage range of 4 V to 14 V with a maximum bias current of 5 µA. Each driver consists of a CMOS input and a buffered output with a 2-A instantaneous drive capability. They have propagation delays of less than 30 ns and rise and fall times of less than 20 ns each. Placing a 0.1-µF ceramic capacitor between V

and ground is recommended; this will supply the instantaneous current needed by the fast switching and high current surges of the driver when it is driving a MOSFET.

The output circuit is also shown in the functional block diagram. This driver uses a unique combination of a bipolar transistor in parallel with a MOSFET for the ability to swing from V

to ground while providing 2 A of instantaneous driver current. This unique parallel combination of bipolar and MOSFET output transistors provides the drive required at V

and ground to guarantee turn-off of even low-threshold MOSFETs. Typical

bipolar-only output devices don’t easily approach V

or ground.

The regulator, included in the TPS2811, TPS2812 and TPS2813, has an input voltage range of 14 V to 40 V. It produces an output voltage of 10 V to 13 V and is capable of supplying from 0 to 20 mA of output current. In grounded source applications, this extends the overall circuit operation to 40 V by clamping the driver supply voltage (V

) to a safe level for both the driver and the MOSFET gate. The bias current for full operation is a maximum of 150 µA. A 0.1-µF capacitor connected between the regulator output and ground is required to ensure stability . For transient response, an additional 4.7-µ F electrolytic capacitor on the output and a 0.1-µF ceramic capacitor on the input will optimize the performance of this circuit. When the regulator is not in use, it can be left open at both the input and the output, or the input can be shorted to the output and tied to either the V

or the ground pin of the chip.

TPS2811, TPS2812, TPS2813, TPS2814, TPS2815

DUAL HIGH-SPEED MOSFET DRIVERS

SLVS132D – NOVEMBER 1995 – REVISED NOVEMBER 1997

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

APPLICATION INFORMATION

matching and paralleling connections

Figures 21 and 22 show the delays for the rise and fall time of each channel. As can be seen on a 5-ns scale, there is very little difference between the two channels at no load. Figures 23 and 24 show the difference between the two channels for a 1-nF load on each output. There is a slight delay on the rising edge, but little or no delay on the falling edge. As an example of extreme overload, Figures 25 and 26 show the difference between the two channels, or two drivers in the package, each driving a 10-nF load. As would be expected, the rise and fall times are significantly slowed down. Figures 28 and 29 show the effect of paralleling the two channels and driving a 1-nF load. A noticeable improvement is evident in the rise and fall times of the output waveforms. Finally , Figures 30 and 31 show the two drivers being paralleled to drive the 10-nF load and as could be expected the waveforms are improved. In summary , the paralleling of the two drivers in a package enhances the capability of the drivers to handle a larger load. Because of manufacturing tolerances, it is not recommended to parallel drivers that are not in the same package.

Regulator

50 Ω

1 nF

Output

0.1 µF 4.7 µF

TPS2811

Figure 19. Test Circuit for Measuring Switching Characteristics

Regulator

50 Ω

L(2)

L(1)

Output 1

0.1 µF 4.7 µF

TPS2811

NOTE A: Input rise and fall times should be ≤10 ns for accurate measurement of ac parameters.

Output 2

Figure 20. Test Circuit for Measuring Switching Characteristics with the Inputs Connected in Parallel

TPS2811, TPS2812, TPS2813, TPS2814, TPS2815 DUAL HIGH-SPEED MOSFET DRIVERS

SLVS132D – NOVEMBER 1995 – REVISED NOVEMBER 1997

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

APPLICATION INFORMATION

Figure 21. Voltage of 1OUT vs Voltage at

2OUT, Low-to-High Output Delay

t – Time

TA = 25°C VI = 14 V CL = 0 Paralleled Inputs

VO at 2OUT (5 V/div, 5 ns/div)

VO at 1OUT (5 V/div, 5 ns/div)

t – Time

TA = 25°C VI = 14 V CL = 0 Paralleled Input

VO at 2OUT (5 V/div, 5 ns/div)

VO at 1OUT (5 V/div, 5 ns/div)

Figure 22. Voltage at 1OUT vs Voltage

at 2OUT, High-to-Low Output Delay

t – Time

TA = 25°C VI = 14 V CL = 1 nF Each Output Paralleled Input

VO at 2OUT

(5 V/div, 10 ns/div)

VO at 1OUT (5 V/div, 10 ns/div)

Figure 23. Voltage at 1OUT vs Voltage at

2OUT, Low-to-High Output Delay

t – Time

VO at 2OUT (5 V/div, 10 ns/div)

VO at 1OUT

(5 V/div, 10 ns/div)

TA = 25°C VI = 14 V CL = 1 nF on Each Output Paralleled Input

Figure 24. Voltage at 1OUT vs Voltage at

2OUT, High-to-Low Output Delay

TPS2811, TPS2812, TPS2813, TPS2814, TPS2815

DUAL HIGH-SPEED MOSFET DRIVERS

SLVS132D – NOVEMBER 1995 – REVISED NOVEMBER 1997

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APPLICATION INFORMATION

t – Time

TA = 25°C VCC = 14 V CL = 10 nF on Each Output Paralleled Input

VO at 2OUT

(5 V/div, 20 ns/div)

VO at 1OUT

(5 V/div, 20 ns/div)

Figure 25. Voltage at 1OUT vs Voltage at

2OUT, Low-to-High Output Delay

t – Time

TA = 25°C VCC = 14 V CL = 10 nF on Each Output Paralleled Input

VO at 2OUT (5 V/div, 20 ns/div)

VO at (5 V/div, 20 ns/div)

Figure 26. Voltage at 1OUT vs Voltage at

2OUT, High-to-Low Output Delay

Regulator

50 Ω

Output

0.1 µF 4.7 µF

TPS2811

NOTE A: Input rise and fall times should be ≤10 ns for accurate measurement of ac parameters.

Figure 27. Test Circuit for Measuring Paralleled Switching Characteristics

TPS2811, TPS2812, TPS2813, TPS2814, TPS2815 DUAL HIGH-SPEED MOSFET DRIVERS

SLVS132D – NOVEMBER 1995 – REVISED NOVEMBER 1997

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APPLICATION INFORMATION

t – Time

TA = 25°C VCC = 14 V CL = 1 nF Paralleled Input and Output

VO (5 V/div, 20 ns/div)

VI (5 V/div, 20 ns/div)

Figure 28. Input Voltage vs Output Voltage,

Low-to-High Propagation Delay of Paralleled

Drivers

t – Time

TA = 25°C VCC = 14 V CL = 1 nF Paralleled Input and Output

VO (5 V/div, 20 ns/div)

VI (5 V/div, 20 ns/div)

Figure 29. Input Voltage vs Output Voltage,

High-to-Low Propagation Delay of Paralleled

Drivers

t – Time

TA = 25°C VCC = 14 V CL = 10 nF Paralleled Input and Output

VO (5 V/div, 20 ns/div)

VI (5 V/div, 20 ns/div)

Figure 30. Input Voltage vs Output Voltage,

Low-to-High Propagation Delay of Paralleled

Drivers

t – Time

TA = 25°C VCC = 14 V CL = 10 nF Paralleled Input and Output

VO (5 V/div, 20 ns/div)

VI (5 V/div, 20 ns/div)

Figure 31. Input Voltage vs Output Voltage,

High-to-Low Propagation Delay of Paralleled

Drivers

TPS2811, TPS2812, TPS2813, TPS2814, TPS2815

DUAL HIGH-SPEED MOSFET DRIVERS

SLVS132D – NOVEMBER 1995 – REVISED NOVEMBER 1997

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APPLICATION INFORMATION

Figures 33 through 47 illustrate the performance of the TPS2811 driving MOSFETs with clamped inductive loads, similar to what is encountered in discontinuous-mode flyback converters. The MOSFET s that were tested range in size from Hex-1 to Hex-4, although the TPS28xx family is only recommended for Hex-3 or below.

The test circuit is shown in Figure 32. The layout rules observed in building the test circuit also apply to real applications. Decoupling capacitor C1 is a 0.1-µF ceramic device, connected between V

and GND of the TPS2811, with short lead lengths. The connection between the driver output and the MOSFET gate, and between GND and the MOSFET source, are as short as possible to minimize inductance. Ideally , GND of the driver is connected directly to the MOSFET source. The tests were conducted with the pulse generator frequency set very low to eliminate the need for heat sinking, and the duty cycle was set to turn off the MOSFET when the drain current reached 50% of its rated value. The input voltage was adjusted to clamp the drain voltage at 80% of its rating.

As shown, the driver is capable of driving each of the Hex-1 through Hex-3 MOSFET s to switch in 20 ns or less. Even the Hex-4 is turned on in less than 20 ns. Figures 45, 46 and 47 show that paralleling the two drivers in a package enhances the gate waveforms and improves the switching speed of the MOSFET. Generally, one driver is capable of driving up to a Hex-4 size. The TPS281 1 family is even capable of driving large MOSFETs that have a low gate charge.

Regulator

50 Ω

0.1 µF

4.7 µF

–

Current

Loop

CR1

Figure 32. TPS2811 Driving Hex-1 through Hex-4 Devices

TPS2811, TPS2812, TPS2813, TPS2814, TPS2815 DUAL HIGH-SPEED MOSFET DRIVERS

SLVS132D – NOVEMBER 1995 – REVISED NOVEMBER 1997

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APPLICATION INFORMATION

t – Time

TA = 25°C VCC = 14 V VI = 48 V

VDS (20 V/div, 0.5 µs/div)

ID (0.5 A/div, 0.5 µs/div)

Figure 33. Drain-Source Voltage vs Drain

Current, TPS2811 Driving an IRFD014

(Hex-1 Size)

t – Time

TA = 25°C VCC = 14 V VI = 48 V

VDS (20 V/div, 50 ns/div)

VGS (5 V/div, 50 ns/div)

Figure 34. Drain-Source Voltage vs

Gate-Source Voltage, at Turn-on,

TPS2811 Driving an IRFD014 (Hex-1 Size)

t – Time

TA = 25°C VCC = 14 V VI = 48 V

VDS (20 V/div, 50 ns/div)

VGS (5 V/div, 50 ns/div)

Figure 35. Drain-Source Voltage vs

Gate-Source Voltage, at Turn-off,

TPS2811 Driving an IRFD014 (Hex-1 Size)

t – Time

TA = 25°C VCC = 14 V VI = 80 V

VDS (50 V/div, 0.2 µs/div)

VGS (0.5 A/div, 0.2 µs/div)

Figure 36. Drain-Source Voltage vs Drain

Current, TPS2811 Driving an IRFD120

(Hex-2 Size)

TPS2811, TPS2812, TPS2813, TPS2814, TPS2815

DUAL HIGH-SPEED MOSFET DRIVERS

SLVS132D – NOVEMBER 1995 – REVISED NOVEMBER 1997

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

APPLICATION INFORMATION

t – Time

TA = 25°C VCC = 14 V VI = 80 V

VDS (50 V/div, 50 ns/div)

VGS (5 V/div, 50 ns/div)

Figure 37. Drain-Source Voltage vs

Gate-Source V oltage,

at Turn-on, TPS2811 Driving an IRFD120

(Hex-2 Size)

t – Time

TA = 25°C VCC = 14 V VI = 80 V

VDS (50 V/div, 50 ns/div)

VGS (5 V/div, 50 ns/div)

Figure 38. Drain-Source Voltage vs

Gate-Source V oltage,

at Turn-off, TPS2811 Driving an IRFD120

(Hex-2 Size)

t – Time

TA = 25°C VCC = 14 V VI = 80 V

VDS (50 V/div, 2 µs/div)

ID (5 A/div, 2 µs/div)

Figure 39. Drain-Source Voltage vs Drain

Current, TPS2811 Driving an IRF530

(Hex-3 Size)

t – Time

TA = 25°C VCC = 14 V VI = 80 V

VDS (50 V/div, 50 ns/div)

VGS (5 A/div, 50 ns/div)

Figure 40. Drain-Source Voltage vs

Gate-Source Voltage, at Turn-on, TPS2811

Driving an IRF530 (Hex-3 Size)

TPS2811, TPS2812, TPS2813, TPS2814, TPS2815 DUAL HIGH-SPEED MOSFET DRIVERS

SLVS132D – NOVEMBER 1995 – REVISED NOVEMBER 1997

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

APPLICATION INFORMATION

t – Time

TA = 25°C VCC = 14 V VI = 350 V

VDS (50 V/div, 0.2 µs/div)

ID (2 A/div,

0.2 µs/div)

Figure 41. Drain-Source Voltage vs Drain

Current,

One Driver, TPS2811 Driving an IRF840

(Hex-4 Size)

t – Time

TA = 25°C VCC = 14 V VI = 80 V

VDS (50 V/div, 50 ns/div)

VGS (5 V/div, 50 ns/div)

Figure 42. Drain-Source Voltage vs

Gate-Source V oltage,

at Turn-off, TPS2811 Driving an IRF530

(Hex-3 Size)

t – Time

TA = 25°C VCC = 14 V VI = 350 V

VDS (50 V/div, 50 ns/div)

VGS (5 V/div, 50 ns/div)

Figure 43. Drain-Source Voltage vs

Gate-Source Voltage, at Turn-on,

One Driver, TPS2811 Driving an IRF840

(Hex-4 Size)

t – Time

TA = 25°C VCC = 14 V VI = 350 V

VDS (50 V/div, 50 ns/div)

VGS (5 V/div, 50 ns/div)

Figure 44. Drain-Source Voltage vs Gate-Source

Voltage, at Turn-off, One Driver,

TPS2811 Driving an IRF840

(Hex-4 Size)

TPS2811, TPS2812, TPS2813, TPS2814, TPS2815

DUAL HIGH-SPEED MOSFET DRIVERS

SLVS132D – NOVEMBER 1995 – REVISED NOVEMBER 1997

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

APPLICATION INFORMATION

t – Time

TA = 25°C VCC = 14 V VI = 350 V

VDS (50 V/div, 0.2 µs/div)

ID (2 A/div,

0.2 µs/div)

Figure 45. Drain-Source Voltage vs Drain

Current, Parallel Drivers,

TPS2811 Driving an IRF840 (Hex-4 Size)

t – Time

TA = 25°C VCC = 14 V VI = 350 V

VDS (50 V/div,

50 ns/div)

VGS (5 V/div,

50 ns/div)

Figure 46. Drain-Source Voltage vs Gate-Source

Voltage, at Turn-on, Parallel Drivers,

TPS2811 Driving an IRF840 (Hex-4 Size)

t – Time

TA = 25°C VCC = 14 V VI = 350 V

VGS (5 V/div, 50 ns/div)

VDS (50 V/div, 50 ns/div)

Figure 47. Drain-Source Voltage vs Gate-Source Voltage, at Turn-off,

Parallel Drivers, TPS2811 Driving an IRF840 (Hex-4 Size)

TPS2811, TPS2812, TPS2813, TPS2814, TPS2815 DUAL HIGH-SPEED MOSFET DRIVERS

SLVS132D – NOVEMBER 1995 – REVISED NOVEMBER 1997

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

APPLICATION INFORMATION

synchronous buck regulator

Figure 48 is the schematic for a 100-kHz synchronous-rectified buck converter implemented with a TL5001 pulse-width-modulation (PWM) controller and a TPS2812 driver. The bill of materials is provided in Table 1. The converter operates over an input range from 5.5 V to 12 V and has a 3.3-V output capable of supplying 3 A continuously and 5 A during load surges. The converter achieves an efficiency of 90.6% at 3 A and 87.6% at 5 A. Figures 49 and 50 show the power switch switching performance. The output ripple voltage waveforms are documented in Figures 54 and 55.

The TPS2812 drives both the power switch, Q2, and the synchronous rectifier, Q1. Large shoot-through currents, caused by power switch and synchronous rectifier remaining on simultaneously during the transitions, are prevented by small delays built into the drive signals, using CR2, CR3, R1 1, R12, and the input capacitance of the TPS2812. These delays allow the power switch to turn off before the synchronous rectifier turns on and vice versa. Figure 51 shows the delay between the drain of Q2 and the gate of Q1; expanded views are provided in Figures 52 and 53.

REG_IN 1 IN GND 2 IN

REG_OUT

1 OUT

2 OUT

TPS2812D

1 2 3 4

8 7 6 5

IRF7406

10 kΩ

C11

0.47 µF

C100

100 µF

16 V

100 µF

16 V

1 2 3 4

IRF7201

CR1 30BQ015

1000 pF

3.3 Ω

27 µF

C12 100 µF 16 V

C7 100 µF 16 V

C13 10 µF 10 V

1 2

3 4

VI GND GND

3.3 V

3.3 V GND GND

TL5001CD

OUT V

COMP FB

GND RT DTC SCP

1.6 kΩ

0.0022 µF

0.033 µF

R13 10 kΩ

C14

0.1 µF

15 Ω

R10 1 kΩ

R11

30 kΩ

CR2

BAS16ZX

R12

10 kΩ

CR3

BAS16ZX

C15

1 µF

R8 121 kΩ 1%

0.22 µF

C1 1 µF

2.32 kΩ 1%

180 Ω

0.022 µF

1.00 kΩ 1%

90.9 kΩ 1%

8765

1234

Figure 48. 3.3-V 3-A Synchronous-Rectified Buck Regulator Circuit

TPS2811, TPS2812, TPS2813, TPS2814, TPS2815

DUAL HIGH-SPEED MOSFET DRIVERS

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APPLICATION INFORMATION

Table 1. Bill of Materials,

3.3-V, 3-A Synchronous-Rectified Buck Converter

REFERENCE DESCRIPTION VENDOR

U1 TL5001CD, PWM Texas Instruments, 972-644-5580 U2 TPS2812D, N.I. MOSFET Driver Texas Instruments, 972-644-5580

CR1 3 A, 15 V, Schottky , 30BQ015 International Rectifier, 310-322-3331

CR2,CR3 Signal Diode, BAS16ZX Zetex, 516-543-7100

C1 1 µF, 16 V, Tantalum C2 0.033 µF, 50 V C3 0.0022 µF, 50 V C4 0.022 µF, 50 V

C5,C7,C10,C12 100 µF, 16 V, Tantalum, TPSE107M016R0100 AVX, 800-448-9411

C6 1000 pF, 50 V

C9 0.22 µF, 50 V C11 0.47 µF, 50 V, Z5U C13 10 µF, 10 V, Ceramic, CC1210CY5V106Z TDK, 708-803-6100 C14 0.1 µF, 50 V C15 1.0 µF, 50 V

J1,J2 4-Pin Header

L1 27 µH, 3 A/5 A, SML5040 Nova Magnetics, Inc., 972-272-8287 Q1 IRF7406, P-FET International Rectifier, 310-322-3331 Q2 IRF7201, N-FET International Rectifier , 310-322-3331 R1 1.00 kΩ, 1% R2 1.6 kΩ R3 180 Ω R4 2.32 kΩ, 1 %

R5,R12,R13 10 kΩ

R6 15 Ω R7 3.3 Ω R8 121 kΩ, 1% R9 90.9 kΩ, 1%

R10 1 kΩ R11 30 kΩ

NOTES: 2. Unless otherwise specified, capacitors are X7R ceramics.

3. Unless otherwise specified, resistors are 5%, 1/10 W.

TPS2811, TPS2812, TPS2813, TPS2814, TPS2815 DUAL HIGH-SPEED MOSFET DRIVERS

SLVS132D – NOVEMBER 1995 – REVISED NOVEMBER 1997

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APPLICATION INFORMATION

t – Time

VD (5 V/div, 20 ns/div)

VG (2 V/div, 20 ns/div)

TA = 25°C VI = 12 V VO = 3.3 V at 5A

Figure 49. Q1 Drain Voltage vs Gate Voltage,

at Switch Turn-on

Figure 50. Q1 Drain Voltage vs Gate Voltage,

at Switch Turn-off

t – Time

VD (5 V/div, 20 ns/div)

VG (2 V/div, 20 ns/div)

TA = 25°C VI = 12 V VO = 3.3 V at 5A

t – Time

VGS (2 V/div, 0.5 µs/div)

TA = 25°C VI = 12 V VO = 3.3 V at 5A

VD (5 V/div, 0.5 µs/div)

Figure 51. Q1 Drain Voltage vs Q2

Gate-Source V oltage

t – Time

VGS (2 V/div, 20 ns/div)

TA = 25°C VI = 12 V VO = 3.3 V at 5A

VD (5 V/div, 20 ns/div)

Figure 52. Q1 Drain Voltage vs Q2

Gate-Source V oltage

TPS2811, TPS2812, TPS2813, TPS2814, TPS2815

DUAL HIGH-SPEED MOSFET DRIVERS

SLVS132D – NOVEMBER 1995 – REVISED NOVEMBER 1997

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

APPLICATION INFORMATION

t – Time

VGS (2 V/div, 20 ns/div)

TA = 25°C VI = 12 V VO = 3.3 V at 5A

VD (5 V/div, 20 ns/div)

Figure 53. Q1 Drain Voltage vs Q2 Gate-Source Voltage

t – Time

Output Ripple Voltage (20 mV/div, 2 µs/div)

Inductor Current (1 A/div, 2 µs/div)

TA = 25°C VI = 12 V VO = 3.3 V at 3A

Figure 54. Output Ripple Voltage vs

Inductor Current, at 3 A

t – Time

Output Ripple Voltage (20 mV/div, 2 µs/div)

Inductor Current (2 A/div, 2 µs/div)

TA = 25°C VI = 12 V VO = 3.3 V at 5 A

Figure 55. Output Ripple Voltage vs

Inductor Current, at 5 A

TPS2811, TPS2812, TPS2813, TPS2814, TPS2815 DUAL HIGH-SPEED MOSFET DRIVERS

SLVS132D – NOVEMBER 1995 – REVISED NOVEMBER 1997

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

MECHANICAL DATA

D (R-PDSO-G**) PLASTIC SMALL-OUTLINE PACKAGE

14 PIN SHOWN

4040047/B 03/95

0.228 (5,80)

0.244 (6,20)

0.069 (1,75) MAX

0.010 (0,25)

0.004 (0,10)

0.014 (0,35)

0.020 (0,51)

0.157 (4,00)

0.150 (3,81)

0.044 (1,12)

0.016 (0,40)

Seating Plane

0.010 (0,25)

PINS **

0.008 (0,20) NOM

A MIN

A MAX

DIM

Gage Plane

0.189

(4,80)

(5,00)

0.197

(8,55)

(8,75)

0.337

0.344

(9,80)

0.394

(10,00)

0.386

0.004 (0,10)

0.010 (0,25)

0.050 (1,27)

0°–8°

NOTES: A. All linear dimensions are in inches (millimeters).

B. This drawing is subject to change without notice. C. Body dimensions do not include mold flash or protrusion, not to exceed 0.006 (0,15). D. Four center pins are connected to die mount pad. E. Falls within JEDEC MS-012

TPS2811, TPS2812, TPS2813, TPS2814, TPS2815

DUAL HIGH-SPEED MOSFET DRIVERS

SLVS132D – NOVEMBER 1995 – REVISED NOVEMBER 1997

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

MECHANICAL DATA

P (R-PDIP-T8) PLASTIC DUAL-IN-LINE PACKAGE

4040082/B 03/95

0.310 (7,87)

0.290 (7,37)

0.010 (0,25) NOM

0.400 (10,60)

0.355 (9,02)

0.020 (0,51) MIN

0.070 (1,78) MAX

0.240 (6,10)

0.260 (6,60)

0.200 (5,08) MAX

0.125 (3,18) MIN

0.015 (0,38)

0.021 (0,53)

Seating Plane

0.010 (0,25)

0.100 (2,54)

0°–15°

NOTES: A. All linear dimensions are in inches (millimeters).

B. This drawing is subject to change without notice. C. Falls within JEDEC MS-001

TPS2811, TPS2812, TPS2813, TPS2814, TPS2815 DUAL HIGH-SPEED MOSFET DRIVERS

SLVS132D – NOVEMBER 1995 – REVISED NOVEMBER 1997

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

MECHANICAL DATA

PW (R-PDSO-G**) PLASTIC SMALL-OUTLINE PACKAGE

4040064/E 08/96

14 PIN SHOWN

Seating Plane

0,05 MIN

1,20 MAX

0,19

4,50 4,30

6,20

6,60

0,30

0,75 0,50

0,25

Gage Plane

0,15 NOM

0,65

0,10

0°–8°

0,10

PINS **

A MIN

A MAX

DIM

2,90

3,10

4,90

5,10

6,60

6,404,90

5,10

7,70

7,90

9,60

9,80

NOTES: A. All linear dimensions are in millimeters.

B. This drawing is subject to change without notice. C. Body dimensions do not include mold flash or protrusion not to exceed 0,15. D. Falls within JEDEC MO-153

IMPORTANT NOTICE

T exas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information to verify, before placing orders, that information being relied on is current and complete. All products are sold subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those pertaining to warranty, patent infringement, and limitation of liability.

TI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with TI’s standard warranty. Testing and other quality control techniques are utilized to the extent TI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except those mandated by government requirements.

CERT AIN APPLICATIONS USING SEMICONDUCTOR PRODUCTS MAY INVOLVE POTENTIAL RISKS OF DEATH, PERSONAL INJURY, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE (“CRITICAL APPLICATIONS”). TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT DEVICES OR SYSTEMS OR OTHER CRITICAL APPLICATIONS. INCLUSION OF TI PRODUCTS IN SUCH APPLICA TIONS IS UNDERST OOD TO BE FULLY AT THE CUSTOMER’S RISK.

In order to minimize risks associated with the customer’s applications, adequate design and operating safeguards must be provided by the customer to minimize inherent or procedural hazards.

TI assumes no liability for applications assistance or customer product design. TI does not warrant or represent that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other intellectual property right of TI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. TI’s publication of information regarding any third party’s products or services does not constitute TI’s approval, warranty or endorsement thereof.

Texas Instruments TPS2815PWLE, TPS2815PWR, TPS2815P, TPS2815DR, TPS2814PWR Datasheet

Specifications and Main Features

Frequently Asked Questions

User Manual