•ESD Performance Tested per JESD 22
– 2-kV HBM and 1-kV CDM
The TPS22966 is a small, low RON, dual-channel load
switch with controlled turnon. The device contains two
N-channel MOSFETs that can operate over an input
voltage range of 0.8 V to 5.5 V and can support a
maximum continuous current of 6 A per channel.
Each switch is independently controlled by an on/off
input (ON1 and ON2), which can interface directly
with low-voltage control signals. In TPS22966, a 220Ω on-chip load resistor is added for quick output
discharge when switch is turned off.
The TPS22966 is available in a small, space-saving
2-mm×3-mm14-SONpackage(DPU)with
integrated thermal pad allowing for high power
dissipation. The device is characterized for operation
over the free-air temperature range of –40°C to
105°C.
Device Information
PART NUMBERPACKAGEBODY SIZE (NOM)
TPS22966WSON (14)3.00 mm × 2.00 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
TPS22966
SLVSBH4E –JUNE 2012–REVISED MARCH 2015
(1)
2Applications
•Ultrabook™
•Notebooks and Netbooks
•Tablet PCs
•Consumer Electronics
•Set-top Boxes and Residental Gateways
•Telecom Systems
•Solid-State Drives (SSD)
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
Changes from Revision D (January 2015) to Revision EPage
•Added temperature operating ranges to Electrical Characteristics (V
•Added temperature operating ranges to Electrical Characteristics (V
•Updated graphics in the Typical Characteristics section........................................................................................................ 8
Changes from Revision C (June 2013) to Revision DPage
•Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation
section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and
Mechanical, Packaging, and Orderable Information section ................................................................................................. 1
Changes from Revision B (December 2012) to Revision CPage
•Added VBIAS to ABSOLUTE MAXIMUM RATINGS table..................................................................................................... 4
VIN11ISwitch 1 input. Recommended voltage range for this pin for optimal RONperformance is 0.8 V to
VIN12ISwitch 1 input. Recommended voltage range for this pin for optimal RONperformance is 0.8 V to
ON13IActive high switch 1 control input. Do not leave floating.
VBIAS4IBias voltage. Power supply to the device. Recommended voltage range for this pin is 2.5 V to 5.5 V.
ON25IActive high switch 2 control input. Do not leave floating.
VIN26ISwitch 2 input. Recommended voltage range for this pin for optimal RONperformance is 0.8V to
VIN27ISwitch 2 input. Recommended voltage range for this pin for optimal RONperformance is 0.8 V to
VOUT28OSwitch 2 output.
VOUT29OSwitch 2 output.
CT210OSwitch 2 slew rate control. Can be left floating. Capacitor used on this pin should be rated for a
GND11–Ground
CT112OSwitch 1 slew rate control. Can be left floating. Capacitor used on this pin should be rated for a
VOUT113OSwitch 1 output.
VOUT114OSwitch 1 output.
Thermal Pad––Thermal pad (exposed center pad) to alleviate thermal stress. Tie to GND. See Layout for layout
I/ODESCRIPTION
V
. Place an optional decoupling capacitor between this pin and GND for reduce VIN dip during
BIAS
turn-on of the channel. See Application Information for more information.
V
. Place an optional decoupling capacitor between this pin and GND for reduce VIN dip during
BIAS
turn-on of the channel. See Application Information for more information.
See Application Information .
V
. Place an optional decoupling capacitor between this pin and GND for reduce VIN dip during
BIAS
turn-on of the channel. See Application Information for more information.
V
. Place an optional decoupling capacitor between this pin and GND for reduce VIN dip during
BIAS
turn-on of the channel. See Application Information for more information.
minimum of 25 V for desired rise time performance.
minimum of 25 V for desired rise time performance.
Over operating free-air temperature range (unless otherwise noted)
V
V
V
V
I
MAX
I
PLS
T
T
T
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
(2) All voltage values are with respect to network ground terminal.
Input voltage–0.36V
IN1,2
Output voltage–0.36V
OUT1,2
ON-pin voltage–0.36V
ON1,2
V
BIAS
voltage–0.36V
BIAS
Maximum continuous switch current per channel6A
Maximum pulsed switch current per channel, pulse <300 µs, 2% duty cycle8A
Maximum junction temperature125°C
J
Maximum lead temperature (10-s soldering time)300°C
LEAD
Storage temperature–65150°C
stg
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under RecommendedOperating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
6.2 ESD Ratings
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001
V
(ESD)
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
Electrostatic dischargeV
Charged-device model (CDM), per JEDEC specification JESD22-
(2)
C101
(1)
MINMAXUNIT
(2)
VALUEUNIT
(1)
±2000
±1000
6.3 Recommended Operating Conditions
MINMAXUNIT
V
IN1,2
V
BIAS
V
ON1,2
V
OUT1,2
V
IH
V
IL
C
IN1,2
T
A
(1) Refer to Input Capacitor (Optional) .
(2) In applications where high power dissipation and/or poor package thermal resistance is present, the maximum ambient temperature may
Input voltage range0.8V
Bias voltage range2.55.5V
ON voltage range05.5V
Output voltage rangeV
High-level input voltage, ONV
Low-level input voltage, ONV
Input capacitor1
Operating free-air temperature
have to be derated. Maximum ambient temperature [T
maximum power dissipation of the device in the application [P
in the application (θJA), as given by the following equation: TA
= 2.5 V to 5.5 V1.25.5V
BIAS
= 2.5 V to 5.5 V00.5V
BIAS
(2)
] is dependent on the maximum operating junction temperature [T
A(max)
], and the junction-to-ambient thermal resistance of the part/package