The TPS2047 and TPS2057 triple power-distribution switches are intended for applications where heavy
capacitive loads and short circuits are likely. These devices incorporate in single packages three 135-mΩ
N-channel MOSFET high-side power switches for power-distribution systems that require multiple power
switches. Each switch is controlled by a logic enable compatible with 5-V and 3-V logic. Gate drive is provided
by an internal charge pump that controls the power-switch rise times and fall times to minimize current surges
during switching. The charge pump, requiring no external components, allows operation from supplies as low
as 2.7 V.
16
15
14
13
12
11
10
9
OC1
OUT1
OUT2
OC2
OC3
OUT3
NC
NC
When the output load exceeds the current-limit threshold or a short is present, the TPS2047 and TPS2057 limit
the output current to a safe level by switching into a constant-current mode, pulling the overcurrent (OCx
) logic
output low. When continuous heavy overloads and short circuits increase the power dissipation in the switch
causing the junction temperature to rise, a thermal protection circuit shuts off the switch in overcurrent to prevent
damage. Recovery from a thermal shutdown is automatic once the device has cooled sufficiently. Internal
circuitry ensures the switch remains off until valid input voltage is present.
The TPS2047 and TPS2057 are designed to limit at0.44-A load. These power-distribution switches are
available in 16-pin small-outline integrated circuit (SOIC) packages and operate over an ambient temperature
range of –40°C to 85°C.
AVAILABLE OPTIONS
RECOMMENDED MAXIMUMTYPICAL SHORT-CIRCUIT
T
A
–40°C to 85°CActive low0.250.44TPS2047D
–40°C to 85°CActive high0.250.44TPS2057D
†
The D package is available taped and reeled. Add an R suffix to device type (e.g., TPS2047DR)
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
ENABLE
CONTINUOUS LOAD CURRENT
(A)
CURRENT LIMIT AT 25°C
(A)
PACKAGED DEVICES
SOIC
†
(D)
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
EN13–IEnable input. Logic low turns on power switch, IN1-OUT1.
EN24–IEnable input. Logic low turns on power switch, IN1-OUT2.
EN37–IEnable input. Logic low turns on power switch, IN2-OUT3.
EN1–3IEnable input. Logic high turns on power switch, IN1-OUT1.
EN2–4IEnable input. Logic high turns on power switch, IN1-OUT2.
EN3–7IEnable input. Logic high turns on power switch, IN2-OUT3.
GND111Ground
GND255Ground
IN122IInput voltage
IN266IInput voltage
NC8, 9, 108, 9, 10No connection
OC11616OOvercurrent. Logic output active low, IN1-OUT1
OC21313OOvercurrent. Logic output active low, IN1-OUT2
OC31212OOvercurrent. Logic output active low, IN2-OUT3
OUT11515OPower-switch output, IN1-OUT1
OUT21414OPower-switch output, IN1-OUT2
OUT31111OPower-switch output, IN2-OUT3
The power switch is an N-channel MOSFET with a maximum on-state resistance of 135 mΩ (V
Configured as a high-side switch, the power switch prevents current flow from OUTx to INx and INx to OUTx
when disabled. The power switch can supply a minimum of 250 mA per switch.
charge pump
An internal charge pump supplies power to the driver circuit and provides the necessary voltage to pull the gate
of the MOSFET above the source. The charge pump operates from input voltages as low as 2.7 V and requires
very little supply current.
driver
The driver controls the gate voltage of the power switch. T o limit large current surges and reduce the associated
electromagnetic interference (EMI) produced, the driver incorporates circuitry that controls the rise times and
fall times of the output voltage. The rise and fall times are typically in the 2-ms to 4-ms range.
enable (ENx or ENx)
The logic enable disables the power switch and the bias for the charge pump, driver, and other circuitry to reduce
the supply current to less than 20 µA when a logic high is present on ENx (TPS2047) or a logic low is present
on ENx (TPS2057). A logic zero input on ENx or logic high on ENx restores bias to the drive and control circuits
and turns the power on. The enable input is compatible with both TTL and CMOS logic levels.
overcurrent (OCx)
The OCx
encountered. The output will remain asserted until the overcurrent or over temperature condition is removed.
current sense
open drain output is asserted (active low) when an overcurrent or over temperature condition is
I(INx)
= 5 V).
A sense FET monitors the current supplied to the load. The sense FET measures current more efficiently than
conventional resistance methods. When an overload or short circuit is encountered, the current-sense circuitry
sends a control signal to the driver. The driver in turn reduces the gate voltage and drives the power FET into
its saturation region, which switches the output into a constant current mode and holds the current constant
while varying the voltage on the load.
thermal sense
The TPS2047 and TPS2057 implement a dual-threshold thermal trip to allow fully independent operation of the
power distribution switches. In an overcurrent or short-circuit condition the junction temperature rises. When
the die temperature rises to approximately 140°C, the internal thermal sense circuitry checks to determine which
power switch is in an overcurrent condition and turns off that switch, thus, isolating the fault without interrupting
operation of the adjacent power switches. Hysteresis is built into the thermal sense, and after the device has
cooled approximately 20 degrees, the switch turns back on. The switch continues to cycle off and on until the
fault is removed. The (OCx
occurs.
undervoltage lockout
A voltage sense circuit monitors the input voltage. When the input voltage is below approximately 2 V , a control
signal turns off the power switch.
) open-drain output is asserted (active low) when overtemperature or overcurrent
Operating virtual junction temperature range, T
Storage temperature range, T
Lead temperature soldering 1,6 mm (1/16 inch) from case for 10 seconds260°C. . . . . . . . . . . . . . . . . . . . . . .
Electrostatic discharge (ESD) protection: Human body model MIL-STD-883C 2 kV. . . . . . . . . . . . . . . . . . . . .
†
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.