Texas Instruments TPIC2701N, TPIC2701MJB Datasheet

TPIC2701

7-CHANNEL COMMON-SOURCE POWER DMOS ARRAY

SLIS019A – SEPTEMBER 1992 – REVISED SEPTEMBER 1996

1

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

D

Seven 0.5-A Independent Output Channels

D

Integrated Clamp Diode With Each Output

D

Low r

DS(on)

. . . 0.5 Ω Typical

D

Output Voltage . . . 60 V

D

Pulsed Current...3 A Per Channel

D

Avalanche Energy...22 mJ

description

The TPIC2701 is a monolithic power DMOS
transistor array that consists of seven indepen­dent N-channel enhancement-mode DMOS
transistors connected in a common-source
configuration with open drains. The TPIC2701 is
pin-for-pin functionally compatible with the Texas
Instruments ULN2001A through ULN2004A.

The TPIC2701 is characterized for operation over
a temperature range of 0°C to 125°C.The
TPIC2701M is characterized for operation over
the full military temperature range of – 55°C to
125°C.

logic diagram

CLAMP

DRAIN1

DRAIN2

DRAIN3

DRAIN4

DRAIN5

DRAIN6

DRAIN7

GATE1

GATE2

GATE3

GATE4

GATE5

GATE6

GATE7

1

2

3

4

5

6

7

SOURCE

8

9

16

15

14

13

12

11

10

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

Copyright  1996, Texas Instruments Incorporated

PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.

1
2
3
4
5
6
7
8

16
15
14
13
12
11
10

9

GATE1
GATE2
GATE3
GATE4
GATE5
GATE6
GATE7

SOURCE

DRAIN1
DRAIN2
DRAIN3
DRAIN4
DRAIN5
DRAIN6
DRAIN7
CLAMP

1
2
3
4
5
6
7
8
9
10
11
12

24
23
22
21
20
19
18
17
16
15
14
13

GATE1
GATE2
GATE3

NC

NC
GATE4
GATE5

NC
GATE6
GATE7

SOURCE
SOURCE

DRAIN1
DRAIN2
DRAIN3
NC
NC
DRAIN4
DRAIN5
NC
DRAIN6
DRAIN7
CLAMP
SOURCE

TPIC2701M

J PACKAGE

†

(TOP VIEW)

NC – No internal connection

TPIC2701

N PACKAGE

(TOP VIEW)

†

Refer to the mechanical data for the JW package.

TPIC2701
7-CHANNEL COMMON-SOURCE POWER DMOS ARRAY

SLIS019A – SEPTEMBER 1992 – REVISED SEPTEMBER 1996

2

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

absolute maximum ratings over operating case temperature range (unless otherwise noted)

Drain-source voltage, VDS 60 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Gate-source voltage, V

GS

±20 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Clamp-drain voltage, V

CD

60 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Continuous source-drain diode current 0.5 A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Pulsed drain current, each output, I

D

(see Note 1 and Figure 17) 3 A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Pulsed clamp current, I

CL

(see Note 1 and Figure 18) 3 A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Continuous drain current, each output, all outputs on 0.5 A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Single-pulse avalanche energy, E

AS

(see Figure 4) 22 mJ. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Continuous total power dissipation See Dissipation Rating Table. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating virtual junction temperature range, T

J

:TPIC2701 –40°C to 150°C. . . . . . . . . . . . . . . . . . . . . . . . . . .

TPIC2701M –55°C to 150°C. . . . . . . . . . . . . . . . . . . . . . . . . .

Operating case temperature range, T

C:

TPIC2701 –40°C to 125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

TPIC2701M –55°C to 125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Storage temperature range, T

stg

–65°C to 150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds: N Package 260°C. . . . . . . . . . . . . . . . . . . . .

Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds: J Package 300°C. . . . . . . . . . . . . . . . . . . . .

NOTE 1: Pulse duration = 10 ms, duty cycle = 6%.

DISSIPATION RATING TABLE

PACKAGE

TA ≤ 25°C

POWER RATING

DERATING FACTOR

ABOVE TA = 25°C

TA = 70°C

POWER RATING

TA = 85°C

POWER RATING

TA = 125°C

POWER RATING

J 2660 mW 21.3 mW/°C 1701 mW 1382 mW 530 mW

N 1400 mW 11.0 mW/°C 905 mW 740 mW 300 mW

electrical characteristics, TC = 25°C (unless otherwise noted)

TPIC2701

PARAMETER

TEST CONDITIONS

MIN TYP MAX

UNIT

V

(BR)DS

Drain-source breakdown voltage ID = 1 µA, VGS = 0 60 V

V

TGS

Gate-source threshold voltage ID = 1 mA, VDS = V

GS

1.2 1.75 2.4 V

V

DS(on)

Drain-source on-state voltage

ID = 0.5 A, VGS = 15 V,
See Notes 2 and 3

0.25 0.4 V

TC = 25°C 0.05 1

I

DSS

Zero-gate-voltage drain current

V

DS

= 48 V,

V

GS

=

0

TC = 125°C 0.5 10

µ

A

I

GSSF

Forward gate current, drain short circuited to
source

VGS = 20 V, VDS = 0 10 100 nA

I

GSSR

Reverse gate current, drain short circuited to
source

VGS = –20 V , VDS = 0 10 100 nA
VGS = 15 V, ID = 0.5 A,

TC = 25°C 0.5 0.8

r

DS(on)

Forward drain-source on-state resistance

S

ee Notes 2 and 3 an

d

Figures 5 and 6

TC = 125°C 0.8 1.3

Ω

g

fs

Forward transconductance

VDS = 15 V, ID = 0.5 A,
See Notes 2 and 3

0.5 0.8 S

C

iss

Short-circuit input capacitance, common source 105

C

oss

Short-circuit output capacitance, common source

65

p

C

rss

Short-circuit reverse transfer capacitance,
common source

V

DS

= 25 V,

V

GS

= 0,f =

300 kHz

15

F

NOTES: 2. Technique should limit TJ – TC to 10°C maximum.

3. These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts with a single output
transistor conducting.

TPIC2701

7-CHANNEL COMMON-SOURCE POWER DMOS ARRAY

SLIS019A – SEPTEMBER 1992 – REVISED SEPTEMBER 1996

3

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

electrical characteristics over case temperature operating range (unless otherwise noted)
(see Note 4)

TPIC2701M

PARAMETER

TEST CONDITIONS

T

C

†

MIN TYP MAX

UNIT

ID = 1 µA, VGS = 0 25°C

V

(BR)DS

Drain-to-source breakdown voltage

ID = 1 mA, VGS = 0 Full range

60

V

V

TGS

Gate-to-source input threshold voltage ID = 1 mA, VDS = V

GS

Full range 1.2 1.75 2.4 V

25°C 0.25 0.45

V

DS(on)

Drain-to-source on-state voltage

I

D

=

0.5 A

,

V

GS

=

15 V

Full range 0.65

V

25°C 0.05 1

I

DSS

Zero-gate-voltage drain current

V

DS

= 48 V,

V

GS

=

0

Full range 10

µ

A

Forward gate current, drain short-circuited to

25°C 10 100 nA

I

GSSF

g,

source

V

GS

= 20 V,

V

DS

=

0

Full range 10 µA

Reverse gate current, drain short-circuited to

25°C 10 100 nA

I

GSSR

g,

source

V

GS

= –

20 V,V

DS

=

0

Full range 10 µA

25°C 0.5 0.9

r

DS(on)

Forward drain-source on-state resistance

V

GS

= 15 V,

I

D

= 0.5

A

Full range 1.3

Ω

g

fs

Forward transconductance VDS = 15 V, ID = 0.5 A 25°C 0.8 S

C

iss

Short-circuit input capacitance, common source 105

C

oss

Short-circuit output capacitance, common source

VDS = 25 V, VGS = 0,

65

p

C

rss

Short-circuit reverse transfer capacitance,
common source

f = 300 kHz

Full range

15

F

†

Full range is –55°C to 125°C.

NOTE 4: Pulse testing techniques are used to maintain the virtual junction temperature as close to the case temperature as possible. Thermal

effects must be taken into account separately.

source-drain diode characteristics, TC = 25°C

TPIC2701

PARAMETER

TEST CONDITIONS

MIN TYP MAX

UNIT

V

SD

Forward On voltage IS = 0.5 A, VGS = 0 0.9 1.4 V

t

rr(SD)

Reverse-recovery time

IS = 0.5 A, VGS = 0, VDS = 48 V,

165 ns

Q

RR

Total source-drain diode charge

SGS

di/dt = 25 A/µs,

DS

See Figure 1

250 nC

source-to-drain diode characteristics over operating case temperature range (unless otherwise
noted) (see Note 4)

TPIC2701M

PARAMETER

TEST CONDITIONS

MIN TYP MAX

UNIT

V

SD

Forward On voltage IS = 0.5 A, VGS = 0 0.9 1.4 V

t

rr

Reverse recovery time

IS = 0.5 A, VGS = 0, VDS = 48 V,

165 ns

Q

RR

Total source-to-drain diode charge

SGS

di/dt = 25 A/µs, TC = 25°C,DSSee Figure 1

250 nC

NOTE 4: Pulse testing techniques are used to maintain the virtual junction temperature as close to the case temperature as possible. Thermal

effects must be taken into account separately.

TPIC2701
7-CHANNEL COMMON-SOURCE POWER DMOS ARRAY

SLIS019A – SEPTEMBER 1992 – REVISED SEPTEMBER 1996

4

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

clamp diode characteristics, TC = 25°C

TPIC2701

PARAMETER

TEST CONDITIONS

MIN TYP MAX

UNIT

V

F

Forward on-voltage IF = 0.5 A 1 1.5 V

V

BR

Breakdown voltage IR = 1 µA 60 V

I

R

Reverse leakage current VR = 48 V 0.05 1 µA

t

rr(CD)

Reverse-recovery time

IF = 0.1 A, di/dt = 25 A/µs,

90 ns

Q

RR

Total source-drain diode charge

F

VCD = 48 V,µSee Figure 1

100 nC

clamp diode characteristics over operating case temperature range (unless otherwise noted)
(see Note 4)

TPIC2701M

PARAMETER

TEST CONDITIONS

MIN TYP MAX

UNIT

V

F

Forward voltage IF = 0.5 A 1 1.5 V

IR = 1 µA, TC = 25°C

V

(BR)

Breakdown voltage

IR = 1 mA

60

V

TC = 25°C 0.05 1

IRReverse leakage current

V

R

= 48

V

10

µ

A

t

rr(SD)

Reverse recovery time, source-to-drain

IF = 0.1 A, di/dt = 25 A/µs, TC = 25°C

90 ns

Q

RR

Total source-to-drain diode charge

F

VCD = 48 V,

µ

C

See Figure 1

100 nC

NOTE 4: Pulse testing techniques are used to maintain the virtual junction temperature as close to the case temperature as possible. Thermal

effects must be taken into account separately.

resistive-load switching characteristics, TC = 25°C

TPIC2701

PARAMETER

TEST CONDITIONS

MIN TYP MAX

UNIT

t

d(on)

Turn-on delay time 10

t

d(off)

Turn-off delay time

V

= 25 V, R

= 100 Ω,t

= 10 ns,

30

t

r

Rise time

DD

,

t

dis

= 10 ns,

L

,

See Figure 2

en

,

15

ns

t

f

Fall time 5

Q

g

Total gate charge

2.8 3.6

Q

gs

Gate-source charge

V

DS

= 48 V,

See

Figure

3

I

D

= 0.25 A,

V

GS

= 10 V,

1.6 2

nC

Q

gd

Gate-drain charge

See Figure 3

1.2 1.6

TPIC2701

7-CHANNEL COMMON-SOURCE POWER DMOS ARRAY

SLIS019A – SEPTEMBER 1992 – REVISED SEPTEMBER 1996

5

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

resistive-load switching characteristics over operating case temperature range (unless otherwise
noted) (see Note 4)

TPIC2701M

PARAMETER

TEST CONDITIONS

MIN TYP MAX

UNIT

t

d(on)

Turn-on delay time 10

t

d(off)

Turn-off delay time

V

= 25 V, R

= 100 Ω,t

= 10 ns,

30

t

r

Rise time

DD

,

t

dis

= 10 ns,

L

,

See Figure 2

en

,

15

ns

t

f

Fall time 5

Q

g

Total gate charge

2.8

Q

gs

Gate-to-source charge

VDS = 48 V,

ID = 0.25 A, VGS = 10 V,

1.6

nC

Q

gd

Gate-to-drain charge

See Figure 3

1.2

NOTE 4: Pulse testing techniques are used to maintain the virtual junction temperature as close to the case temperature as possible. Thermal

effects must be taken into account separately.

thermal resistance

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

N package with all outputs at equal power 90

°

R

θJA

Junction-to-ambient thermal resistance

J package with all outputs at equal power 66

°C/W

PARAMETER MEASUREMENT INFORMATION

t

rr

0.5 A

IF/I

S

0

I

RM

di/dt = 25 A/µs

25% of I

RM

QRR = Shaded Area

(see Note A)

NOTE A: IRM = maximum recovery current

Figure 1. Reverse-Recovery-Current Waveforms of Source-Drain and Clamp Diodes