Texas Instruments TPIC0108BDWP, TPIC0108BDWPR Datasheet

TPIC0108B

PWM CONTROL INTELLIGENT H-BRIDGE

SLIS068 – NOVEMBER1998

1

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

D

Low Quiescent Supply Current of 20 µA

D

Optimized for Low-Power/Battery-Operated
Applications

D

Two Input Control Lines for Reduced
Microcontroller Overhead

D

Internal Current Shutdown of 5 A

D

40 V Load Dump Rating

D

Integrated Fault Protection and Diagnostics

D

CMOS Compatible Schmitt Trigger Inputs
for High Noise Immunity

description

The TPIC0108B is a PWM control intelligent H-bridge designed specifically for dc motor applications. The
device provides forward, reverse, and brake modes of operation. A logic supply voltage of 5 V is internally
derived from V

CC

.

The TPIC0108B has an extremely low r

DS(on)

, 280 mΩ typical, to minimize system power dissipation. The
control inputs (IN1 and IN2) greatly simplify the microcontroller overhead requirement. The device has a low
quiescent supply current of 20 µA to suit a wide range of automotive and industrial battery-operated
applications.

The TPIC0108B provides protection against over-voltage, over-current, over-temperature, and cross
conduction faults. Fault diagnostics can be obtained by monitoring the ST ATUS1 and STATUS2 terminals and
the two input control lines. STATUS1 is an open-drain output suitable for wired-or connection. STATUS2 is a
push-pull output that provides a latched status output. Under-voltage protection ensures that the outputs, OUT1
and OUT2, will be disabled when V

CC

is less than the under-voltage detection voltage V

(UVCC)

.

The TPIC0108B is designed using TI’s LinBiCMOS process. LinBiCMOS allows the integration of low power
CMOS structures, precision bipolar cells, and low impedance DMOS transistors.

The TPIC0108B is offered in a 20-pin thermally enhanced small-outline package (DWP) and is characterized
for operation over the operating case temperature of –40°C to 125°C.

FUNCTION TABLE

IN1

IN2 OUT1 OUT2 MODE

0 0 Z Z Quiescent supply current mode
0 1 LS HS Motor turns clockwise
1 0 HS LS Motor turns counter clockwise
1 1 HS HS Brake, both HSDs turned on hard

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

LinBiCMOS is a trademark of Texas Instruments Incorporated.

1
2
3
4
5
6
7
8
9
10

20
19
18
17
16
15
14
13
12
11

GNDS

V

CC

IN1

V

CC

OUT1
OUT1

GND

IN2

GND

GNDS

GNDS
V

CC

STATUS2
V

CC

OUT2
OUT2
GND
STATUS1
GND
GNDS

DWP PACKAGE

(TOP VIEW)

PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.

Copyright  1998, Texas Instruments Incorporated

TPIC0108B
PWM CONTROL INTELLIGENT H-BRIDGE

SLIS068 – NOVEMBER1998

2

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

block schematic

Logic

5 V

Reg.

Charge

Pump

(2 MHz)

Over-

Current

Protection

HSD

DMOS
Driver

Open­Circuit
Detect

Under-

Voltage

Detection

Over-

Temperature

Detection

DMOS
Driver

Over-

Current

Protection

LSD

Over-

Voltage

Detection

DMOS
Driver

DMOS
Driver

OUT2 OUT1

DMOS
Driver

Load-Dump

Protection

GND

IN1

IN2
STATUS1
STATUS2

V

CC

Terminal Functions

TERMINAL

NAME NO.

I/O

DESCRIPTION

GND 7, 9,

12, 14

I Power ground

GNDS 1, 10,

11, 20

I Substrate ground

IN1 3 I Control input
IN2 8 I Control input
OUT1 5, 6 O Half-H output. DMOS output
OUT2 15, 16 O Half-H output. DMOS output
STATUS1 13 O Status output
STATUS2 18 O Latched status output
V

CC

2, 4,

17, 19

I Supply voltage

NOTE: It is mandatory that all four ground terminals plus at least one substrate terminal are connected to the system ground. Use all VCC and

OUT terminals.

TPIC0108B

PWM CONTROL INTELLIGENT H-BRIDGE

SLIS068 – NOVEMBER1998

3

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

schematics of inputs and outputs

STATUS2

STATUS1

IN1/IN2

absolute maximum ratings over operating case temperature range (unless otherwise noted)

†

Power supply voltage range, V

CC

–0.3 V to 33 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Logic input voltage range, V

IN

–0.3 V to 7 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Load dump (for 400 ms; T

C

= 25°C) 40 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Status output voltage range, V

O(status)

–0.3 V to 7 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Continuous power dissipation, T

C

= 25°C 25 W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Storage temperature range, T

stg

–55°C to 150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Maximum junction temperature, T

J

150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

†

Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

DISSIPATION RATING TABLE

TA ≤ 25°C

POWER RATING

DERATING FACTOR

ABOVE TA = 25°C

TA = 70°C

POWER RATING

TA = 125°C

POWER RATING

25 W –0.2 W/°C 16 W 5 W

recommended operating conditions

MIN MAX UNIT

Supply voltage, V

CC

6 18 V

Operating case temperature, T

C

–40 125 °C

Switching frequency, f

PWM

2 kHz

TPIC0108B
PWM CONTROL INTELLIGENT H-BRIDGE

SLIS068 – NOVEMBER1998

4

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

electrical characteristics over recommended operating case temperature range and V

CC

= 5 V to

6 V (unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

TJ = 25°C 550

Static drain-source on-resistance (per transistor)

LSD

TJ = 150°C 850

mΩ

r

DS(on)

()

I

(BR)

= 1 A

TJ = 25°C 600

HSD

TJ = 150°C 870

mΩ

I

(QCD)

Open circuit detection current 10 40 100 mA

V

(UVCC(OFF))

Under voltage detection on VCC, switch off voltage See Note 1 5 V

V

(UVCC(ON))

Under voltage detection on VCC, switch on voltage See Note 1 5.2 V

V

(STL)

STATUS low output voltage IO = 100 µA, See Note 1 0.8 V

V

(ST2H)

STATUS2 high output voltage IO = 20 µA, See Note 1 3 5.4 V

I

(ST(OFF))

STATUS output leakage current V

(ST)

= 5 V, See Note 1 5 µA

V

IL

Low level logic input voltage –0.3 0.5 V

V

IH

High level logic input voltage 3.6 7 V

∆V

I

Hysteresis of input voltage 0.3 V

I

IH

High level logic input current VIH = 3.5 V 2 10 50 µA

NOTE 1: The device functions according to the function table for VCC between V

(UVCC)

and 5 V (no parameters specified). STA TUS outputs are

not defined for VCC less than V

(UVCC)

.

TPIC0108B

PWM CONTROL INTELLIGENT H-BRIDGE

SLIS068 – NOVEMBER1998

5

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

electrical characteristics over recommended operating case temperature and supply voltage
ranges (unless otherwise noted) (see Note 2)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

°

VCC = 6 V to 9 V 380

T

J

=

25°C

VCC = 9 V to 18 V 280 340

LSD

°

VCC = 6 V to 9 V 620

mΩ

Static drain-source on-resistance

T

J

=

150°C

VCC = 9 V to 18 V 400 560

r

DS(on)

(per transistor) IBR = 1 A

°

VCC = 6 V to 9 V 430

T

J

=

25°C

VCC = 9 V to 18 V 280 340

HSD

°

VCC = 6 V to 9 V 640

mΩ

T

J

=

150°C

VCC = 9 V to 18 V 400 560

I

(QB)

Quiescent battery current TJ = 25°C VCC = 13.2 V 20 µA

I

(QCD)

Open circuit detection current 10 40 100 mA

T

SDS

Static thermal shutdown temperature See Notes 3 and 4 140 °C

T

SDD

Dynamic thermal shutdown temperature See Notes 3 and 5 160 °C

VCC = 6 V to 9 V 4.8 7.5

ICSCurrent shutdown limit

VCC = 9 V to 18 V 5 7.5

A

I

(CON)

Continuous bridge current

TJ = 125°C, Operating lifetime 10,000 hours,
(see Figure 1)

3 A

V

(OVCC)

Over voltage detection on V

CC

27 36 V

V

(STL)

STATUS low output voltage IO = 100 µA 0.8 V

V

(ST2H)

STATUS2 high output voltage IO = 20 µA 3.9 5.4 V

I

(ST(OFF))

STATUS output leakage current V

(ST)

= 5 V 5 µA

V

IL

Low level logic input voltage –0.3 0.8 V

V

IH

High level logic input voltage 3.6 7 V

∆V

I

Hysteresis of input voltage 0.3 V

I

IH

High level logic input current VIH = 3.5 V 2 10 50 µ

A

NOTES: 2. The device functions according to the function table for VCC between 18 V and V

(OVCC)

, but only up to a maximum supply voltage

of 33 V (no parameters specified). Exposure beyond 18 V for extended periods may affect device reliability.

3. Exposure beyond absolute-maximum-rated condition of junction temperature may affect device reliability.

4. No temperature gradient between DMOS transistor and temperature sensor .

5. With temperature gradient between DMOS transistor and temperature sensor in a typical application (DMOS transistor as heat
source).

switching characteristics over recommended operating case temperature and supply voltage
ranges (unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

High-side driver turn-on time

100

t

out(on)

Low-side driver turn-on time

V

DS(on)

<1 V at 1 A,

V

CC

= 13.2

V

100

µ

s

Slew rate, low-to-high sinusoidal (δV/δt)

1 6

SR

Slew rate, high-to-low sinusoidal (δV/δt)

V

CC

= 13.2 V,

I

O

= 1 A

resistive load

1 6

V/µs

t

d(QCD)

Under current spike duration to trigger
open circuit detection

VCC = 5 V to 18 V 1 10 ms

t

d(CS)

Delay time for over current shutdown 5 10 25 µs