TEXAS INSTRUMENTS TMS27C020 Technical data

查询TMS27C020 262144供应商
TMS27C020 262144 BY 8-BIT UV ERASABLE
TMS27PC020 262144 BY 8-BIT
PROGRAMMABLE READ-ONLY MEMORIES
SMLS020C – NOVEMBER 1990 – REVISED SEPTEMBER 1997
D
D
Single 5-V Power Supply
D
Operationally Compatible With Existing Megabit EPROMs
D
Industry Standard 32-Pin Dual-In-line Package and 32-Lead Plastic Leaded Chip Carrier
D
All Inputs/Outputs Fully TTL Compatible
D
±10% VCC Tolerance
D
Max Access/Min Cycle Time V
± 10%
CC
’27C/PC020-10 100 ns ’27C/PC020-12 120 ns
’27C/PC020-15 150 ns ’27C/PC020-20 200 ns ’27C/PC020-25 250 ns
D
8-Bit Output For Use in Microprocessor-Based Systems
D
Very High-Speed SNAP! Pulse Programming
D
Power Saving CMOS Technology
D
3-State Output Buffers
D
400 mV Minimum DC Noise Immunity With Standard TTL Loads
D
Latchup Immunity of 250 mA on All Input and Output Pins
D
No Pullup Resistors Required
D
Low Power Dissipation (VCC = 5.5 V) – Active...165 mW Worst Case – Standby...0.55 mW Worst Case
(CMOS-Input Levels)
D
Temperature Range Options
description
The TMS27C020 series are 262144 by 8-bit (2097152-bit), ultraviolet (UV) light erasable, electrically programmable read-only memories (EPROMs).
The TMS27PC020 series are one-time program­mable (OTP) electrically programmable read-only memories (PROMs).
J PACKAGE (TOP VIEW)
V
1
PP
A16
2
A15
3
A12
4
A7
5
A6
6
A5
7
A4
8
A3
9
A2
10
A1
11
A0
12
DQ0
13
DQ1
14
DQ2
15
GND
A7
5
A6
6 7
A5
8
A4
9
A3
10
A2
11
A1
12
A0
13
DQ0
A0–A17 Address Inputs DQ0–DQ7 Inputs (programming)/Outputs E G GND Ground PGM V
CC
V
PP
†Only in program mode
16
TMS27PC020
FM PACKAGE
(TOP VIEW)
A12
A15
A16
3213231
430
14
15 16 17 18 19
DQ1
DQ2
GND
PIN NOMENCLATURE
Chip Enable Output Enable
Program 5-V Power Supply 13-V Power Supply
32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17
PP
V
DQ3
CC
V
DQ4
V
CC
PGM A17 A14 A13 A8 A9 A1 1 G A10 E DQ7 DQ6 DQ5 DQ4 DQ3
PGM
20
DQ5
A17
29 28 27 26 25 24 23 22 21
DQ6
A14 A13 A8 A9 A11 G A10 E DQ7
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.
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Copyright 1997, Texas Instruments Incorporated
1
TMS27C020 262144 BY 8-BIT UV ERASABLE TMS27PC020 262144 BY 8-BIT PROGRAMMABLE READ-ONLY MEMORIES
SMLS020C – NOVEMBER 1990 – REVISED SEPTEMBER 1997
description (continued)
These devices are fabricated using power-saving CMOS technology for high speed and simple interface with MOS and bipolar circuits. All inputs (including program data inputs) can be driven by Series 74 TTL circuits without the use of external pullup resistors. Each output can drive one Series 74 TTL circuit without external resistors.
The TMS27C020 EPROM is offered in a dual-in-line ceramic package (J suffix) designed for insertion in mounting hole rows on 15,2-mm (600-mil) centers. The TMS27C020 is also offered with two choices of temperature ranges of 0° to 70°C (JL suffix) and – 40°C to 85°C (JE suffix). See Table 1.
The TMS27PC020 is offered in a 32-lead plastic leaded chip carrier using 1,25 mm (50 mil) lead spacing (FM suffix). The TMS27PC020 is offered with two choices of temperature ranges of 0° C to 70°C (FML suffix) and – 40°C to 85°C (FME suffix). See Table 1.
Table 1. Temperature Range Suffixes
SUFFIX FOR OPERATING
FUNCTION
TMS27C040-XXX JL JE
TMS27PC040-XXX FML FME
TEMPERATURE RANGES
0°C TO 70°C –40 °C TO 85°C
These EPROMs operate from a single 5-V supply (in the read mode), they are ideal for use in microprocessor-based systems. One other (13 V) supply is needed for programming. All programming signals are TTL level. For programming outside the system, existing EPROM programmers can be used.
operation
The seven modes of operation for the TMS27C020 and TMS27PC020 are listed in Table 2. The read mode requires a single 5-V supply . All inputs are TTL level except for V A9 for the signature mode.
Table 2. Operation Modes
MODE
FUNCTION
E V G V
PGM X X X V
V
PP
V
CC
A9 X X X X X X VH‡ VH‡ A0 X X X X X X V
DQ0–DQ7 Data Out Hi-Z Hi-Z Data In Data Out Hi-Z
X can be VIL or V
VH = 12 V ± 0.5 V
READ
IL IL
X V
V
CC
IH
OUTPUT
DISABLE
V
IL
V
IH
CC
V
CC
STANDBY PROGRAMMING VERIFY
V
IH
X V
V
CC
V
CC
V
IL
IH
IL
V
PP
V
CC
during programming (13 V), and VH (12 V) on
PP
PROGRAM
INHIBIT
V
IL
V
IL
V
IH
V
PP
V
CC
V
IH
X V X X
V
PP
V
CC
SIGNATURE MODE
V V
IL
CODE
MFG DEVICE
97 32
V
IL IL
CC CC
V
IH
2
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TMS27C020 262144 BY 8-BIT UV ERASABLE
TMS27PC020 262144 BY 8-BIT
PROGRAMMABLE READ-ONLY MEMORIES
SMLS020C – NOVEMBER 1990 – REVISED SEPTEMBER 1997
read/output disable
When the outputs of two or more TMS27C020s or TMS27PC020s are connected in parallel on the same bus, the output of any particular device in the circuit can be read with no interference from competing outputs of the other devices. To read the output of a single device, a low level signal is applied to the E devices in the circuit should have their outputs disabled by applying a high level signal to one of these pins.
latchup immunity
Latchup immunity on the TMS27C020 and TMS72PC020 is a minimum of 250 mA on all inputs and outputs. This feature provides latchup immunity beyond any potential transients at the P .C. board level when the EPROM is interfaced to industry standard TTL or MOS logic devices. The input/output layout approach controls latchup without compromising performance or packing density.
power down
Active I 100 µA by applying a high CMOS input on E
erasure
Before programming, the TMS27C020 is erased by exposing the chip through the transparent lid to a high intensity ultraviolet light (wavelength 2537 Å). The recommended minimum exposure dose (UV intensity × exposure time) is 15-Ws/cm 21 minutes. The lamp should be located about 2.5 cm above the chip during erasure. After erasure, all bits are in the high state. It should be noted that normal ambient light contains the correct wavelength for erasure. Therefore, when using the TMS27C020, the window should be covered with an opaque label. After erasure (all bits in logic high state), logic lows are programmed into the desired locations. A programmed low can be erased only by ultraviolet light.
supply current can be reduced from 30 mA to 500 µA by applying a high TTL input on E and to
CC
. In this mode all outputs are in the high-impedance state.
2
. A typical 12-mW/cm2, filterless UV lamp erases the device in
and G pins. All other
SNAP! Pulse programming
The TMS27C020 and TMS27PC020 are programmed using the TI SNAP! Pulse programming algorithm, illustrated by the flowchart in Figure 1, which programs in a nominal time of twenty-six seconds. Actual programming time varies as a function of the programmer used.
The SNAP! Pulse programming algorithm uses an initial pulse of 100 microseconds (µs) followed by a byte verification to determine when the addressed byte has been successfully programmed. Up to ten 100-µs pulses per byte are provided before a failure is recognized.
equals 13 V , VCC = 6.5 V, E = VIL, G = VIH. Data is presented
The programming mode is achieved when V in parallel (eight bits) on pins DQ0 through DQ7. Once addresses and data are stable, PGM
More than one device can be programmed when the devices are connected in parallel. Locations can be programmed in any order. When the SNAP! Pulse programming routine is complete, all bits are verified with
= VPP = 5 V ± 10%.
V
CC
program inhibit
Programming can be inhibited by maintaining a high level input on the E
program verify
Programmed bits can be verified with V
signature mode
The signature mode provides access to a binary code identifying the manufacturer and type. This mode is activated when A9 (pin 26) is forced to 12 V. Two identifier bytes are accessed by toggling A0. All other addresses must be held low. The signature code for the TMS27C020 is 9732. A0 low selects the manufacturer’s code 97 (Hex), and A0 high selects the device code 32 (Hex), as shown in Table 3.
PP
PP
or PGM pins.
equals 13 V when G = VIL, E = VIL, and PGM = VIH.
is pulsed low.
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3
TMS27C020 262144 BY 8-BIT UV ERASABLE
IDENTIFIER
TMS27PC020 262144 BY 8-BIT PROGRAMMABLE READ-ONLY MEMORIES
SMLS020C – NOVEMBER 1990 – REVISED SEPTEMBER 1997
signature mode (continued)
Table 3. Signature Mode
A0 DQ7 DQ6 DQ5 DQ4 DQ3 DQ2 DQ1 DQ0 HEX
MANUFACTURER CODE V DEVICE CODE V
E
= G = VIL, A1–A8 = VIL, A9 = VH, A10–A17 = VIL, VPP = VCC.
IL IH
1 0 0 1 0 1 1 1 97 0 0 1 1 0 0 1 0 32
PINS
4
POST OFFICE BOX 1443 HOUSTON, TEXAS 77251–1443
TMS27C020 262144 BY 8-BIT UV ERASABLE
TMS27PC020 262144 BY 8-BIT
PROGRAMMABLE READ-ONLY MEMORIES
SMLS020C – NOVEMBER 1990 – REVISED SEPTEMBER 1997
Start
Address = First Location
VCC = 6.5 V ± 0.25 V , VPP = 13 V ± 0.25 V
Program One Pulse = tw = 100 µs
Last
Address?
Yes
Address = First Location
X = 0
Increment
Address
Verify
One Byte
Pass
Fail
No
Increment Address
Program One Pulse = tw = 100 µs
No
X = 10?X = X + 1
Program
Mode
Interactive
Mode
No
VCC = VPP = 5 V ± 0.5 V
Last
Address?
Yes Yes
Compare All Bytes
to Original
Data
Pass
Device Passed
Fail
Device Failed
Figure 1. SNAP! Pulse Programming Flowchart
Final
Verification
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5
TMS27C020 262144 BY 8-BIT UV ERASABLE TMS27PC020 262144 BY 8-BIT PROGRAMMABLE READ-ONLY MEMORIES
SMLS020C – NOVEMBER 1990 – REVISED SEPTEMBER 1997
logic symbol
This symbol is in accordance with ANSI/IEEE Std 91-1984 and IEC Publication 617-12. Pin numbers are for the J package.
EPROM 262 144 × 8
A0 A1 A2 A3 A4 A5 A6 A7 A8
A9 A10 A11 A12 A13 A14 A15 A16 A17
12 11 10 9 8 7 6 5 27 26 23 25 4 28 29 3 2 30
22
E
24
G
0
A
17 [PWR DOWN]
&
EN
0
262 143
A A A A A A A A
13 14
15 17 18 19 20 21
DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7
6
POST OFFICE BOX 1443 HOUSTON, TEXAS 77251–1443
VCCSuppl
oltage
VPPSuppl
oltage
VIHHigh-level dc input voltage
V
VILLow-level dc input voltage
V
VOHHigh-level dc output voltage
V
VOLLow-level dc output voltage
V
I
pply current (standby)
A
TMS27C020 262144 BY 8-BIT UV ERASABLE
TMS27PC020 262144 BY 8-BIT
PROGRAMMABLE READ-ONLY MEMORIES
SMLS020C – NOVEMBER 1990 – REVISED SEPTEMBER 1997
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)
Supply voltage range, V Supply voltage range, V Input voltage range (see Note 1), All inputs except A9 : –0.6 V to V
(see Note 1) : –0.6 V to 7 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CC
: –0.6 V to 14 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
PP
CC
+ 1 V. . . . . . . . . . . . . . . . . . . . . . . . . . . .
A9 : –0.6 V to 13.5 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Output voltage range, with respect to V
(see Note 1) : –0.6 V to VCC + 1 V. . . . . . . . . . . . . . . . . . . . . . . . . .
SS
Operating free-air temperature range (’27C020-_ _ JL, ’27PC020_ _FML) : 0°C to 70°C. . . . . . . . . . . . . . . . .
Operating free-air temperature range (’27C020-_ _JE, ’27PC020-_ _FME) : – 40°C to 85°C. . . . . . . . . . . . . . .
Storage temperature range, T
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1: All voltage values are with respect to GND.
: –65°C to 150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
recommended operating conditions
MIN NOM MAX UNIT
pp
y v
pp
y v
p
p
T
A
T
A
NOTE 2: VCC must be applied before or at the same time as VPP and removed after or at the same time as VPP. The device must not be
Operating free-air temperature
Operating free-air temperature
inserted into or removed from the board when VPP or VCC is applied.
Read mode (see Note 2) 4.5 5 5.5 V SNAP! Pulse programming algorithm 6.25 6.5 6.75 V Read mode VCC–0.6 V SNAP! Pulse programming algorithm 12.75 13 13.25 V
TTL 2 VCC+0.5 CMOS VCC–0.2 VCC+0.5 TTL –0.5 0.8 CMOS –0.5 GND+0.2 ’27C020-_ _JL,
’27PC020-_ _FML ’27C020-_ _JE,
’27PC020-_ _FME
0 70 °C
– 40 85 °C
CCVCC
+0.6 V
electrical characteristics over full ranges of operating conditions
PARAMETER TEST CONDITIONS MIN MAX UNIT
p
p
I
Input current (leakage) VI = 0 V to 5.5 V ±1 µA
I
I
Output current (leakage) VO = 0 V to V
O
I
PP1VPP
I
PP2VPP
CC1VCC
I
CC2VCC
Minimum cycle time = maximum access time.
supply current VPP = VCC = 5.5 V 10 µA supply current (during program pulse) VPP = 13 V 50 mA
pp
su
supply current (active)
TTL-input level VCC = 5.5 V, E = V CMOS-input level VCC = 5.5 V, E = VCC ± 0.2 V 100
IOH = –20 µA VCC– 0.2 IOH = – 2 mA 2.4 IOL = 2.1 mA 0.4 IOL = 20 µA 0.1
CC
. . . 500
VCC = 5.5 V, E = V t
= minimum cycle time,
cycle
outputs open
±1 µA
IH
IL
µ
30 mA
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7
TMS27C020 262144 BY 8-BIT UV ERASABLE
TEST
CONDITIONS
1 Series 74
TMS27PC020 262144 BY 8-BIT PROGRAMMABLE READ-ONLY MEMORIES
SMLS020C – NOVEMBER 1990 – REVISED SEPTEMBER 1997
capacitance over recommended ranges of supply voltage and operating free-air temperature, f = 1 MHz
C
I
C
O
Capacitance measurements are made on sample basis only.
All typical values are at TA = 25°C and nominal voltages.
PARAMETER
Input capacitance VI = 0 V, f = 1 MHz 4 8 pF Output capacitance VO = 0 V, f = 1 MHz 6 10 pF
TEST CONDITIONS MIN NOM‡MAX UNIT
switching characteristics over full ranges of recommended operating conditions (see Notes 3 and 4)
’27C020-10 ’27C020-12 ’27C020-15 27C020-20 ’27C020-25
PARAMETER
t
t
t
t
t
§ NOTES: 3. For all switching characteristics, the input pulse levels are 0.4 V to 2.4 V. Timing measurements are made at 2 V for logic high
Access time
a(A)
from address Access time
from chip en-
a(E)
able Output enable
en(G)
time from G Output disable
time from G
dis
E
, whichever
occurs first Output data
valid time after change of ad-
v(A)
dress, E
, or G, whichever oc­curs first
Value calculated from 0.5-V delta to measured output level. This parameter is sampled and not 100% tested.
§
and 0.8 V for logic low. (See Figure 2).
4. Common test conditions apply for t
or
CL = 100 pF,
TTL load, Input tr 20 ns, Input tf 20 ns
27PC020-10 27PC020-12 ’27PC020-15 27PC020-20 ’27PC020-25
MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX
100 120 150 200 250 ns
100 120 150 200 250 ns
55 55 75 75 100 ns
0 50 0 50 0 60 0 60 0 80 ns
0 0 0 0 0 ns
except during programming.
dis
UNIT
8
POST OFFICE BOX 1443 HOUSTON, TEXAS 77251–1443
TMS27C020 262144 BY 8-BIT UV ERASABLE
TMS27PC020 262144 BY 8-BIT
PROGRAMMABLE READ-ONLY MEMORIES
SMLS020C – NOVEMBER 1990 – REVISED SEPTEMBER 1997
switching characteristics for programming: VCC = 6.5 V and VPP = 13 V (SNAP! Pulse), TA = 25°C (see Note 3)
PARAMETER MIN MAX UNIT
t
dis(G)
t
en(G)
NOTE 3: For all switching characteristics the input pulse levels are 0.4 V to 2.4 V. Timing measurements are made at 2 V for logic high and
timing requirements for programming
t
w(PGM)
t
su(A)
t
su(E)
t
su(G)
t
su(D)
t
su(VPP)
t
su(VCC)
t
h(A)
t
h(D)
Output disable time from G 0 100 ns Output enable time from G 150 ns
0.8 V for logic low (See Figure 2).
MIN TYP MAX UNIT
Pulse duration, program SNAP! Pulse programming algorithm 95 100 105 µs Setup time, address 2 µs Setup time, E 2 µs Setup time, G 2 µs Setup time, data 2 µs Setup time, V Setup time, V Hold time, address 0 µs Hold time, data 2 µs
PP CC
2 µs 2 µs
POST OFFICE BOX 1443 HOUSTON, TEXAS 77251–1443
9
TMS27C020 262144 BY 8-BIT UV ERASABLE TMS27PC020 262144 BY 8-BIT PROGRAMMABLE READ-ONLY MEMORIES
SMLS020C – NOVEMBER 1990 – REVISED SEPTEMBER 1997
PARAMETER MEASUREMENT INFORMATION
Output
Under Test
2.08 V
RL = 800
CL = 100 pF
(see Note A)
A0–A17
DQ0–DQ7
2.4 V
0.4 V
NOTES: A. CL includes probe and fixture capacitance.
B. The ac testing inputs are driven at 2.4 V for logic high and 0.4 V for logic low . Timing
measurements are made at 2 V for logic high and 0.8 V for logic low for both inputs and outputs.
2 V
0.8 V
Figure 2. The ac Testing Output Load Circuit and Waveform
Addresses Valid
t
a(A)
E
t
a(E)
G
ten(G)
Hi-Z
2 V
0.8 V
t
v(A)
Output Valid
t
dis
Hi-Z
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
10
Figure 3. Read-Cycle Timing
POST OFFICE BOX 1443 HOUSTON, TEXAS 77251–1443
PARAMETER MEASUREMENT INFORMATION
Program
A0–A17
t
su(A)
DQ0–DQ7
V
PP
V
CC
E
t
su(E)
PGM
G
t
and t
dis(G)
13-V VPP and 6.5-V VCC for SNAP! Pulse programming.
are characteristics of the device but must be accommodated by the programmer.
en(G)
t
w(PGM)
Data-In Stable
t
su(D)
t
su(VPP)
t
su(VCC)
Address Stable
t
h(D)
t
su(G)
TMS27C020 262144 BY 8-BIT UV ERASABLE
TMS27PC020 262144 BY 8-BIT
PROGRAMMABLE READ-ONLY MEMORIES
SMLS020C – NOVEMBER 1990 – REVISED SEPTEMBER 1997
Verify
V
IH
V
IL
V
/V
IH
OH
/V
V
OL
IL
V
PP
V
CC
V
CC
V
CC
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
Data-Out
t
en(G)
Valid
t
h(A)
t
dis(G)
Address
N + 1
Figure 4. Program-Cycle Timing (SNAP! Pulse Programming)
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11
TMS27C020 262144 BY 8-BIT UV ERASABLE TMS27PC020 262144 BY 8-BIT PROGRAMMABLE READ-ONLY MEMORIES
SMLS020C – NOVEMBER 1990 – REVISED SEPTEMBER 1997
FM (R-PQCC-J32) PLASTIC J-LEADED CHIP CARRIER
Seating Plane
0.140 (3,56)
0.495 (12,57)
0.485 (12,32)
0.453 (11,51)
0.447 (11,35)
4
301
0.129 (3,28)
0.123 (3,12)
0.049 (1,24)
0.043 (1,09)
0.008 (0,20) NOM
0.132 (3,35)
0.004 (0,10)
13
5
14
0.050 (1,27)
20
29
0.020 (0,51)
0.015 (0,38)
0.595 (15,11)
0.585 (14,86)
0.553 (14,05)
0.547 (13,89)
0.030 (0,76) TYP
21
4040201-4/B 03/95
NOTES: A. All linear dimensions are in inches (millimeters).
12
B. This drawing is subject to change without notice. C. Falls within JEDEC MS-016
POST OFFICE BOX 1443 HOUSTON, TEXAS 77251–1443
TMS27C020 262144 BY 8-BIT UV ERASABLE
TMS27PC020 262144 BY 8-BIT
PROGRAMMABLE READ-ONLY MEMORIES
SMLS020C – NOVEMBER 1990 – REVISED SEPTEMBER 1997
J (R-CDIP-T**) CERAMIC SIDE-BRAZE DUAL-IN-LINE PACKAGE
24 PIN SHOWN
B
24
1
0.090 (2,29)
0.060 (1,53)
0.100 (2,54)
0.065 (1,65)
0.045 (1,14)
13
12
0.018 (0,46) MIN
0.022 (0,56)
0.014 (0,36)
C
0.175 (4,45)
0.140 (3,56)
Seating Plane
0.125 (3,18) MIN
Lens Protrusion
0.010 (0,25) MAX
A
0°–10°
0.012 (0,30)
0.008 (0,20)
DIM
NOTES: A. All linear dimensions are in inches (millimeters).
PINS**
MAX
A
MIN MAX
B
MIN MAX
C
MIN
B. This drawing is subject to change without notice. C. This package can be hermetically sealed with a ceramic lid using glass frit. D. Index point is provided on cap for terminal identification only on press ceramic glass frit seal only.
NARR
0.624(15,85) 0.624(15,85)
0.590(14,99) 0.590(14,99)
1.265(32,13) 1.265(32,13)
1.235(31,37) 1.235(31,37)
0.541(13,74) 0.598(15,19)
0.514(13,06) 0.571(14,50)
24
WIDE
NARR
0.624(15,85) 0.624(15,85)
0.590(14,99) 0.590(14,99)
1.465(37,21) 1.465(37,21)
1.435(36,45) 1.435(36,45)
0.541(13,74) 0.598(15,19)
0.514(13,06) 0.571(14,50)
28
WIDE WIDE
NARR
0.624(15,85) 0.624(15,85)
0.590(14,99) 0.590(14,99)
1.668(42,37) 1.668(42,37)
1.632(41,45) 1.632(41,45)
0.541(13,74) 0.598(15,19)
0.514(13,06) 0.571(14,50)
32
WIDE
NARR
0.624(15,85) 0.624(15,85)
0.590(14,99) 0.590(14,99)
2.068(52,53) 2.068(52,53)
2.032(51,61) 2.032(51,61)
0.541(13,74) 0.598(15,19)
0.514(13,06) 0.571(14,50)
4040084/B 04/95
40
POST OFFICE BOX 1443 HOUSTON, TEXAS 77251–1443
13
TMS27C020 262144 BY 8-BIT UV ERASABLE TMS27PC020 262144 BY 8-BIT PROGRAMMABLE READ-ONLY MEMORIES
SMLS020C – NOVEMBER 1990 – REVISED SEPTEMBER 1997
14
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IMPORTANT NOTICE
T exas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information to verify, before placing orders, that information being relied on is current and complete. All products are sold subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those pertaining to warranty, patent infringement, and limitation of liability.
TI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with TI’s standard warranty. Testing and other quality control techniques are utilized to the extent TI deems necessary to support this warranty . Specific testing of all parameters of each device is not necessarily performed, except those mandated by government requirements.
CERT AIN APPLICATIONS USING SEMICONDUCTOR PRODUCTS MAY INVOLVE POTENTIAL RISKS OF DEATH, PERSONAL INJURY, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE (“CRITICAL APPLICATIONS”). TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT DEVICES OR SYSTEMS OR OTHER CRITICAL APPLICA TIONS. INCLUSION OF TI PRODUCTS IN SUCH APPLICATIONS IS UNDERST OOD TO BE FULLY AT THE CUSTOMER’S RISK.
In order to minimize risks associated with the customer’s applications, adequate design and operating safeguards must be provided by the customer to minimize inherent or procedural hazards.
TI assumes no liability for applications assistance or customer product design. TI does not warrant or represent that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other intellectual property right of TI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. TI’s publication of information regarding any third party’s products or services does not constitute TI’s approval, warranty or endorsement thereof.
Copyright 1998, Texas Instruments Incorporated
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